KR850005164A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR850005164A
KR850005164A KR1019840008409A KR840008409A KR850005164A KR 850005164 A KR850005164 A KR 850005164A KR 1019840008409 A KR1019840008409 A KR 1019840008409A KR 840008409 A KR840008409 A KR 840008409A KR 850005164 A KR850005164 A KR 850005164A
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KR
South Korea
Prior art keywords
semiconductor layer
semiconductor
impurities
semiconductor device
activation rate
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Application number
KR1019840008409A
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English (en)
Inventor
세이간 시라기
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR850005164A publication Critical patent/KR850005164A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 트랜지스터의 제조공정을 도시하는 단면도.
제4도, 제5도A 제6도∼제10도는 각각 본 발명의 트랜지스터의 구조를 도시하는 단면도.
제5도B는 AIAs의 혼정비(混晶比)의 분포를 도시하는도면.

Claims (6)

  1. 캐리어 이송 영역을 구성하기 위한 헤테로 접합을 형성하는 제1 및 제2의 반도체 층과 캐리어의 제어수단과, 캐리어의 송수수단과를 갖는 반도체 장치에 있어서, 상기 캐리어의 송수수단간의 반도체 층에는 불순물을 1016cm-3이하만을 포함하는 영역을 가지며, 상기 제1의 반도체 층은 상기 제2의 반도체 층보다도 금제대폭이 크고, 또한 제1의 반도체 층을 축으로해서, 상기 제2의 반도체 층과 접하는 면과 반대측 영역에 의해서 불순물의 활성화율이 양호한 반도체 층을 적어도 1층 갖는 것을 특징으로 하는 반도체 장치.
  2. 상기 불순물의 활성화율이 양호한 반도체 층과 제1및 제2의 반도체 층이 형성하는 헤테르 접합면과의 거리가 500Å를 초과하지 않은 것을 특징으로 하는 특허청구의 범위 제1항 기재의 반도체 장치.
  3. 상기 불순물의 활성화율이 양호한 반도체 층으로 비교적 금제대폭이 큰 반도체 층과 비교적 금제대폭이 작은 반도체 층을 교대로 적층한 다중양자 웰구조체를 사용한 것을 특징으로 하는 특허청구의 범위 제1항 기재의 반도체 장치.
  4. 상기 다중양자 웰구조를 구성하는 각 반도체 층은 두께가 10∼100Å의 범위로 선택되는 것을 특징으로 하는 특허청구의 범위 제3항 기재의 반도체 장치.
  5. 상기 불순물의 활성화율이 양호한 반도체 층을 상기 캐기어의 제어수단과 제1및 제2의 반도체 층의 형성하는 헤테로 접합면과의 사이에 설치되어 있는 것을 특징으로 하는 특허청구의 범위 제1항 기제의 반도체 장치.
  6. 상기 다중양자 웰구조는 상기 캐리어의 제어수단과 제1및 제2의 반도체 층이 형성하는 헤테로 접합면과의 사이에 설치되는 것을 특징으로 하는 특허청구의 범위 제3항 기재의 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840008409A 1983-12-28 1984-12-27 반도체 장치 KR850005164A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58-246273 1983-12-28
JP58246273A JPS60140874A (ja) 1983-12-28 1983-12-28 半導体装置

Publications (1)

Publication Number Publication Date
KR850005164A true KR850005164A (ko) 1985-08-21

Family

ID=17146077

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840008409A KR850005164A (ko) 1983-12-28 1984-12-27 반도체 장치

Country Status (5)

Country Link
US (1) US4673959A (ko)
EP (1) EP0151309B1 (ko)
JP (1) JPS60140874A (ko)
KR (1) KR850005164A (ko)
DE (1) DE3482355D1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
JPH0824131B2 (ja) * 1985-10-07 1996-03-06 株式会社日立製作所 電界効果トランジスタ
EP0228624B1 (en) * 1985-12-19 1993-04-21 Sumitomo Electric Industries, Ltd. field effect transistor
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
JP2519212B2 (ja) * 1986-08-01 1996-07-31 沖電気工業株式会社 半導体素子の製造方法
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
US4998154A (en) * 1990-01-18 1991-03-05 Northern Telecom Limited MSM photodetector with superlattice
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
JP2549206B2 (ja) * 1990-12-27 1996-10-30 住友電気工業株式会社 電界効果トランジスタ
US5323020A (en) * 1992-12-22 1994-06-21 International Business Machines Corporation High performance MESFET with multiple quantum wells
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
JP4474292B2 (ja) * 2005-01-28 2010-06-02 トヨタ自動車株式会社 半導体装置
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
US9601630B2 (en) * 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
JPS58143577A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 埋め込みゲ−ト電界効果トランジスタの製造方法
JPS58147173A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置
CA2135492A1 (en) * 1992-06-05 1993-12-23 Horng-Jau Lin 4-pyrimidine sulfenamides and their use in rubber

Also Published As

Publication number Publication date
EP0151309A2 (en) 1985-08-14
US4673959A (en) 1987-06-16
EP0151309A3 (en) 1985-09-25
JPS60140874A (ja) 1985-07-25
DE3482355D1 (de) 1990-06-28
EP0151309B1 (en) 1990-05-23

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