KR950012750A - 실리콘 공명 터널링 다이오드 및 터널링 장벽 제조 방법 - Google Patents

실리콘 공명 터널링 다이오드 및 터널링 장벽 제조 방법 Download PDF

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KR950012750A
KR950012750A KR1019940027852A KR19940027852A KR950012750A KR 950012750 A KR950012750 A KR 950012750A KR 1019940027852 A KR1019940027852 A KR 1019940027852A KR 19940027852 A KR19940027852 A KR 19940027852A KR 950012750 A KR950012750 A KR 950012750A
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tunneling
silicon
layer
quantum
diode
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KR1019940027852A
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비. 샘프셀 제프리
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윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR950012750A publication Critical patent/KR950012750A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66151—Tunnel diodes

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Abstract

공명 터널링 다이오드(400)은 실리콘 산화물 터널링 장벽들(404 및 408)을 갖는 실리콘 양자 웰(406)로 구성된다. 터널링 장벽들은 터널링 장벽 높이에 영향을 받지 않고 다이오드를 통과하는 결정 정렬을 확실히 하기 위해 확산된 전자 웨이브 패킷보다 작은 크기의 개구(430)들을 갖고 있다

Description

실리콘 공명 터널링 다이오드 및 터널링 장벽 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 3b도는 전류-전압도와 공지된 공명 터널링 다이오드의 대역을 도시한 도면.

Claims (14)

  1. (a)제1양자, 제2양자 및 양자 웰 ; 및 (b)상기 제1양자로부터 상기 양자 웰을 분리하고, 상기 제1양자와 상기 양자 웰 중 최소한 하나와 동일한 물질 영역을 포함하고, 상기 양자 웰 및 상기 제1양자와 인접해 있는 제1터널링 장벽 및 상기 제2단자로부터 상기 양자 웰을 분리하는 제2터널링 장벽을 포함하는 것을 특징으로 하는 공명 터널링 다이오드.
  2. 제1항에 있어서, (a)상기 제1양자, 상기 제2양자 및 상기 양자 웰이 실리콘으로 형성되고; (b)상기 제1터널링 장벽 및 상기 제2터널링 장벽이 실리콘과 산소의 합성물을 포함하는 것을 특징으로 하는 공명 터널링 다이오드.
  3. 제1항에 있어서, 상기 영역이 그리드 패턴을 갖고 있는 것을 특징으로 하는 공명 터널링 다이오드.
  4. 제2항에 있어서, 상기 합성물은 실리콘이 산화물인 것을 특징으로 하는 공명 터널링 다이오드.
  5. a)실리콘기(silicon-based) 트랜지스터 및 (b)비정질 실리콘-산소 합성물을 포함하는 터널링 장벽들을 갖고 있고, 상기 트랜지스터에 결합되는 실리콘 공명 터널링 다이오드를 포함하는 것을 특징으로 하는 집적회로.
  6. 제5항에 있어서, 상기 터널링 장벽들이 상기 터널링 장벽들 중의 하나의 양측상의 실리콘 영역과 인접하는 영역을 각각 포함하는 것을 특징으로 하는 집적 회로.
  7. 제6항에 있어서, 상기 실리콘 영역은 그리고 패턴을 갖고 있는 것을 특징으로 하는 집적 회로.
  8. 제5항에 있어서, 상기 실리콘-산소 혼합물은 실리콘 이 산화물인 것을 특징으로 하는 집적 회로.
  9. 제5항에 있어서, 상기 트랜지스터는 절연 게이트 전계 효관 트랜지스터인 것을 특징으로 하는 집적 회로.
  10. a) 전도 물질상에 터널링 장벽 혼합물층을 형성하는 단계 : (b) 상기층내에 최소한 하나의 개구를 형성하는 단계; 및 (c)상기 개구를 통해 상기 층상으로 상기 물질을 확장시키는 단계를 포함하는 것을 특징으로 하는 터널링 장벽 제조 방법.
  11. 제10항에 있어서, (a)상기 전도 물질은 실리콘이고; (b)상기 터널링장벽 혼합물은 실리콘-산소 혼합물인 것을 특징으로 하는터널링 장벽 제조 방법.
  12. 제10항에 있어서, (a) 상기 개구를 통해 상기 층상으로 확장으로 확장되는 상기 물질상에 터널링 장벽 혼합물의 제2층을 형성하는 단계; (b) 상기 제2층내에 최소한 하나의 제2개구를 형성하는 단계; 및 (c)상기 개구를 통해 상기 제2층상으로 상기 물질을 확장하여 공명 터널링 다이오드를 형성하는 단계를 더 포함하는 것을 특징으로 하는 터널링 장벽 제조 방법.
  13. 제12항에 있어서, 최소한 하나의 메사 공명 터널링 다이오드를 형성하기 위해 상기 전도 물질, 상기층 및 상기 제2층의 부분들을 제거하는 단계를 더 포함하는 것을 특징으로 하는 터널링 장벽 제조 방법.
  14. 제12항에 있어서, 최소한 하나의 절연-분리 공명 터널링 다이오드를 형성하기 위해 상기 전도 물질 및 상기 층 및 상기 제2층의 부분들을 비활성화시키는 단계를 더 포함하는 것을 특징으로 하는 터널링 장벽 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940027852A 1993-10-29 1994-10-28 실리콘 공명 터널링 다이오드 및 터널링 장벽 제조 방법 KR950012750A (ko)

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US08/145,267 US5796119A (en) 1993-10-29 1993-10-29 Silicon resonant tunneling

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Cited By (1)

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KR100419253B1 (ko) * 2000-11-24 2004-02-19 엘지전자 주식회사 이 쓰리 데이터 프레임 펄스 위치 검출 장치

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US11721546B2 (en) 2021-10-28 2023-08-08 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms
US11631584B1 (en) 2021-10-28 2023-04-18 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to define etch stop layer

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EP0651447A1 (en) 1995-05-03
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