KR970018759A - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

Info

Publication number
KR970018759A
KR970018759A KR1019960039099A KR19960039099A KR970018759A KR 970018759 A KR970018759 A KR 970018759A KR 1019960039099 A KR1019960039099 A KR 1019960039099A KR 19960039099 A KR19960039099 A KR 19960039099A KR 970018759 A KR970018759 A KR 970018759A
Authority
KR
South Korea
Prior art keywords
light emitting
substrate
buffer layer
emitting element
semiconductor light
Prior art date
Application number
KR1019960039099A
Other languages
English (en)
Inventor
젬페이 가와즈
노리오 하야후지
디트하르트 마르크스
Original Assignee
기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 기다오까 다까시, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 기다오까 다까시
Publication of KR970018759A publication Critical patent/KR970018759A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

반도체 발광 소자는 반대의 정면 및 배면을 갖는 Si 기판(1)과; 해당 Si 기판(1)의 정면상에 형성된 비정질 또는 다결정의 제1버퍼층(2)과; 해당 제1 버퍼층(2)상에, 전자와 정공의 재결합에 의해 발광하는 발광영역을 포함하도록 순차 형성된 복수의 GaN계 화합물 반도체층(3, 4, 5)을 구비한다. 이 발광소자에 있어서, Si 기판(1)은 벽개성을 갖기 때문에, 벽개에 의한 공진기 단면을 형성할 수 있다. 또한, Si 기판(1)은 도전성을 갖기 때문에, 한쌍의 전극을 발광소자의 상면 및 하면에 설치하는 구조를 실현할 수 있다. 더욱, Si 기판(1)은 염가이기 때문에, 저비용으로 발광소자를 얻을 수 있다.

Description

반도체 발광소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예1에 의한 반도체 레이저의 개략구성을 나타내는 단면도.

Claims (3)

  1. 반대의 정면 및 배면을 갖는 Si 기판(1)과; 해당 Si 기판(1)의 정면상에 형성된 비정질 또는 다결정의 제1버퍼층(2)과; 해당 제1 버퍼층(2)상에, 전자와 정공의 재결합에 의해 발광하는 발광영역을 포함하도록 순차 형성된 복수의 GaN계 화합물 반도체층(3, 4, 5)을 구비하는 반도체 발광 소자.
  2. 제1항에 있어서, 상기 제1버퍼층(2)은 Si 또는 Si C로 이루어지는 반도체 발광 소자.
  3. 반대의 정면 및 배면을 갖는 Si 기판(1)을 준비하는 공정과; Si 기판(1)의 정면상에 비정질 또는 다결정의 버퍼층을 형성하는 공정과; 상기 GaN계 화합물 반도체층이 전자와 정공의 재결합에 의해 발광하는 발광영역을 포함하도록 상기 버퍼층상에 복수의 GaN계 화합물 반도체층(3, 4, 5)을 순차 성장시키는 공정을 구비하는 반도체 발광 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960039099A 1995-09-25 1996-09-10 반도체 발광소자 및 그 제조방법 KR970018759A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24561195A JPH0992882A (ja) 1995-09-25 1995-09-25 半導体発光素子，及びその製造方法
JP245611 1995-09-25

Publications (1)

Publication Number Publication Date
KR970018759A true KR970018759A (ko) 1997-04-30

Family

ID=17136286

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039099A KR970018759A (ko) 1995-09-25 1996-09-10 반도체 발광소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US5764673A (ko)
EP (1) EP0764989A1 (ko)
JP (1) JPH0992882A (ko)
KR (1) KR970018759A (ko)
CN (1) CN1148734A (ko)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258619B1 (en) 1996-12-06 2001-07-10 Rohm Ltd Fabrication of semiconductor light emitting device
US6103604A (en) * 1997-02-10 2000-08-15 Trw Inc. High electron mobility transparent conductor
ATE550461T1 (de) * 1997-04-11 2012-04-15 Nichia Corp Wachstumsmethode für einen nitrid-halbleiter
DE19715572A1 (de) * 1997-04-15 1998-10-22 Telefunken Microelectron Verfahren zum Herstellen von epitaktischen Schichten eines Verbindungshalbleiters auf einkristallinem Silizium und daraus hergestellte Leuchtdiode
JP3480297B2 (ja) * 1997-10-10 2003-12-15 豊田合成株式会社 半導体素子
US6559467B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6344375B1 (en) 1998-07-28 2002-02-05 Matsushita Electric Industrial Co., Ltd Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
JP3505405B2 (ja) * 1998-10-22 2004-03-08 三洋電機株式会社 半導体素子及びその製造方法
WO2001061766A1 (fr) * 2000-02-21 2001-08-23 Sanken Electric Co., Ltd. Dispositif semi-conducteur electroluminescent et procede de fabrication correspondant
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
GB2365208A (en) * 2000-07-19 2002-02-13 Juses Chao Amorphous alingan light emitting diode
JP2002190621A (ja) * 2000-10-12 2002-07-05 Sharp Corp 半導体発光素子およびその製造方法
US20030012984A1 (en) * 2001-07-11 2003-01-16 Tetsuzo Ueda Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
KR100744933B1 (ko) * 2003-10-13 2007-08-01 삼성전기주식회사 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법
CN100380690C (zh) * 2003-11-20 2008-04-09 果尚志 可减少高度晶格常数失配影响的半导体结构及形成的方法
US7741654B2 (en) * 2004-09-16 2010-06-22 Nec Corporation Group III nitride semiconductor optical device
CN100356595C (zh) * 2004-09-27 2007-12-19 晶元光电股份有限公司 Ⅲ族氮化物半导体元件及其制造方法
CN100435359C (zh) * 2004-10-10 2008-11-19 晶元光电股份有限公司 半导体发光元件及其制造方法
US7338826B2 (en) * 2005-12-09 2008-03-04 The United States Of America As Represented By The Secretary Of The Navy Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
JP2008071803A (ja) * 2006-09-12 2008-03-27 Institute Of National Colleges Of Technology Japan 化合物混晶半導体発光装置。
US20090272975A1 (en) * 2008-05-05 2009-11-05 Ding-Yuan Chen Poly-Crystalline Layer Structure for Light-Emitting Diodes
GB2467911B (en) * 2009-02-16 2013-06-05 Rfmd Uk Ltd A semiconductor structure and a method of manufacture thereof
US8952717B2 (en) * 2009-02-20 2015-02-10 Qmc Co., Ltd. LED chip testing device
US8405068B2 (en) * 2009-07-22 2013-03-26 Rfmd (Uk) Limited Reflecting light emitting structure and method of manufacture thereof
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
US20120292648A1 (en) * 2011-05-16 2012-11-22 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US9312436B2 (en) 2011-05-16 2016-04-12 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
TWI618268B (zh) 2012-12-07 2018-03-11 晶元光電股份有限公司 發光裝置
CN103872206B (zh) * 2012-12-14 2019-10-25 晶元光电股份有限公司 形成发光装置的制造方法及其所制成的发光装置
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849707A (en) * 1973-03-07 1974-11-19 Ibm PLANAR GaN ELECTROLUMINESCENT DEVICE
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
US4139858A (en) * 1977-12-12 1979-02-13 Rca Corporation Solar cell with a gallium nitride electrode
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JP2829319B2 (ja) * 1988-09-16 1998-11-25 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JPH0289306A (ja) * 1988-09-27 1990-03-29 Oki Electric Ind Co Ltd 半導体薄膜の形成方法
JPH02178915A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
JPH0429023A (ja) * 1990-05-25 1992-01-31 Tanaka Kikinzoku Kogyo Kk 多点温度測定素子
JPH0831419B2 (ja) * 1990-12-25 1996-03-27 名古屋大学長 単結晶珪素基板上への化合物半導体単結晶の作製方法
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
CA2120610C (en) * 1992-08-07 1999-03-02 Hideaki Imai Nitride based semiconductor device and manufacture thereof
US5425860A (en) * 1993-04-07 1995-06-20 The Regents Of The University Of California Pulsed energy synthesis and doping of silicon carbide
US5393647A (en) * 1993-07-16 1995-02-28 Armand P. Neukermans Method of making superhard tips for micro-probe microscopy and field emission
DE69503299T2 (de) * 1994-04-20 1999-01-21 Toyoda Gosei Kk Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung
US5540786A (en) * 1995-03-21 1996-07-30 The Hong Kong University Of Science & Technology Light emitting material

Also Published As

Publication number Publication date
CN1148734A (zh) 1997-04-30
JPH0992882A (ja) 1997-04-04
EP0764989A1 (en) 1997-03-26
US5764673A (en) 1998-06-09

Similar Documents

Publication Publication Date Title
KR970018759A (ko) 반도체 발광소자 및 그 제조방법
KR970054585A (ko) 질화물계 iii-v족 화합물 반도체 소자 및 그의 제조 방법
KR970072575A (ko) 발광 소자 및 그 제조 방법
ATE279799T1 (de) Verbindungshalbleiterstruktur für optoelektronische bauelemente
KR930022619A (ko) 반도체 발광소자
KR970067957A (ko) 질화갈륨계 화합물 반도체 발광 소자 및 그의 제조 방법
KR920017309A (ko) 레이저 다이오드 어레이 및 그 제조방법
KR960003001A (ko) 수직 공동 표면 방출 레이저(vcsel) 및 수직 공동 표면 방출 레이저(vcsel)용 패턴화 미러의 제조 방법
KR920020797A (ko) 반도체레이저
KR910010761A (ko) 에피택셜 웨이퍼 및 그 제조방법
KR960026252A (ko) 오믹전극을 가지는 반도체장치와 제법
KR930003446A (ko) 반도체 발광소자 제조방법
KR970018882A (ko) 반도체 레이저 다이오드 및 그 제조방법
KR940008174A (ko) 반도체 레이저 다이오드의 제조방법
KR890017834A (ko) 반도체 레이저 및 그 제조방법
KR950007214A (ko) 반도체 레이저 소자 및 그의 제조방법
KR910020954A (ko) 반도체의 고휘도 적색 led 전극 및 그 제조방법
KR860003676A (ko) 발광다이오드의 제조방법
KR950012902A (ko) 반도체 레이저 다이오드 및 그의 제조 방법
KR930005140A (ko) 화합물 반도체소자 및 그 제조방법
KR930003473A (ko) 반도체 레이저의 제조방법
KR900004045A (ko) 접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법
KR930011313A (ko) 박막 el 소자의 제조방법
KR950012879A (ko) 반도체 레이저 어레이 및 이의 제조방법
KR920020796A (ko) 레이저다이오드의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application