KR890017834A - 반도체 레이저 및 그 제조방법 - Google Patents

반도체 레이저 및 그 제조방법 Download PDF

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KR890017834A
KR890017834A KR1019890006276A KR890006276A KR890017834A KR 890017834 A KR890017834 A KR 890017834A KR 1019890006276 A KR1019890006276 A KR 1019890006276A KR 890006276 A KR890006276 A KR 890006276A KR 890017834 A KR890017834 A KR 890017834A
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semiconductor laser
type
manufacturing
regrowth
laser according
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KR1019890006276A
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KR0130066B1 (ko
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겐지 시모야마
히데끼 고오도오
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스즈기 세이지
미쓰비시가세이 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Abstract

내용 없음

Description

반도체 레이저 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 관한 반도체 레이저의 구조를 표시한 도면. 제 2 도는 종래의 반도체 레이저의 구조를 표시한 도면. 제 3 도는 종래의 다중양자샘의 구조를 설명하기 위한 도면.

Claims (5)

  1. 반절연성 기판상에 형성되어, AlyCal-yAs 활성층을 고비저항의 AlxGal-xAs의 상부 및 하부 클래드층으로 끼운 메사상으로 형성된 더블 헤테로구조(0.3x0.85, 0y0.45, 0yx), AlxGal-xAs의 하부 클래드층 상에 매입하여 재성장에 의해 더블 헤테로 구조를 끼워서 형성된 n형 p형의 AlzGal-zAs(yzx)캐리어 주입층, 및 표면에 전극이 형성되는 n+형 및 p+형 접촉층으로 되는 반도체 레이저.
  2. 매입 재성장에 의한 캐리어 주입층의 형성은, 원료의 공급원이 모두 개스 소오스로 되어있는 MO-VPE혹은 MO-MBE 등의 결정성장법을 사용해서 행하는 것을 특징으로 하는 제 1 항 기재의 반도체 레이저.
  3. 횡방향에 pn 접합을 갖는 제 1 항 기재의 반도체 레이져.
  4. 매입형 반도체 레이저의 제조방법에 있어서, 원료의 공급원이 모두 개스 소오스로 되어있는 MO-VPE혹은 MO-MBE 등의 결정성장법을 사용해서 AlxGal-xAs(0.3x0.85)상에 매입해서 재성장 시키는 것을 특징으로 하는 반도체 레이저의 제조방법.
  5. 재성장 직전에 기상에칭에 의해 AlxGal-xAs 표면의 산화막의 제거를 행하는 제 4 항 기재의 반도체 레이저의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890006276A 1988-05-11 1989-05-10 반도체 레이저 및 그 제조방법 KR0130066B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1988-113898 1988-05-11
JP63113898A JPH0831658B2 (ja) 1988-05-11 1988-05-11 半導体レーザ及びその製造方法
JP88-113898 1988-05-11

Publications (2)

Publication Number Publication Date
KR890017834A true KR890017834A (ko) 1989-12-18
KR0130066B1 KR0130066B1 (ko) 1998-04-06

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Application Number Title Priority Date Filing Date
KR1019890006276A KR0130066B1 (ko) 1988-05-11 1989-05-10 반도체 레이저 및 그 제조방법

Country Status (5)

Country Link
US (1) US4969151A (ko)
EP (1) EP0342018B1 (ko)
JP (1) JPH0831658B2 (ko)
KR (1) KR0130066B1 (ko)
DE (1) DE68911586T2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2772000B2 (ja) * 1988-11-25 1998-07-02 工業技術院長 電極分離型半導体レーザ装置
JP7210876B2 (ja) * 2017-11-30 2023-01-24 日本電信電話株式会社 光デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225680A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体レ−ザ
JPS60235491A (ja) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp 半導体レ−ザ
JPS6179284A (ja) * 1984-09-26 1986-04-22 Nec Corp 半導体レ−ザ
JPS6223193A (ja) * 1985-07-23 1987-01-31 Mitsubishi Electric Corp 半導体レ−ザ
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures

Also Published As

Publication number Publication date
EP0342018A3 (en) 1990-03-14
US4969151A (en) 1990-11-06
JPH0831658B2 (ja) 1996-03-27
DE68911586T2 (de) 1994-04-14
JPH01283984A (ja) 1989-11-15
EP0342018B1 (en) 1993-12-22
DE68911586D1 (de) 1994-02-03
KR0130066B1 (ko) 1998-04-06
EP0342018A2 (en) 1989-11-15

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