DE3685755D1 - Streifenlaser mit transversalem uebergang. - Google Patents

Streifenlaser mit transversalem uebergang.

Info

Publication number
DE3685755D1
DE3685755D1 DE8686113081T DE3685755T DE3685755D1 DE 3685755 D1 DE3685755 D1 DE 3685755D1 DE 8686113081 T DE8686113081 T DE 8686113081T DE 3685755 T DE3685755 T DE 3685755T DE 3685755 D1 DE3685755 D1 DE 3685755D1
Authority
DE
Germany
Prior art keywords
regions
conductivity type
cladding layers
active
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686113081T
Other languages
English (en)
Other versions
DE3685755T2 (de
Inventor
Christoph Stefan Harder
Heinz Jaeckel
Heinz Meier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3685755D1 publication Critical patent/DE3685755D1/de
Publication of DE3685755T2 publication Critical patent/DE3685755T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8686113081T 1986-09-23 1986-09-23 Streifenlaser mit transversalem uebergang. Expired - Lifetime DE3685755T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP86113081A EP0261262B1 (de) 1986-09-23 1986-09-23 Streifenlaser mit transversalem Übergang

Publications (2)

Publication Number Publication Date
DE3685755D1 true DE3685755D1 (de) 1992-07-23
DE3685755T2 DE3685755T2 (de) 1993-02-04

Family

ID=8195438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686113081T Expired - Lifetime DE3685755T2 (de) 1986-09-23 1986-09-23 Streifenlaser mit transversalem uebergang.

Country Status (4)

Country Link
US (1) US4805179A (de)
EP (1) EP0261262B1 (de)
JP (1) JPS6384186A (de)
DE (1) DE3685755T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834330B2 (ja) * 1988-03-22 1996-03-29 キヤノン株式会社 半導体レーザ装置
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur
DE68920853T2 (de) * 1988-11-28 1995-05-24 Fujitsu Ltd Verfahren für das Wachstum von epitaxialen Schichten.
JP2854607B2 (ja) * 1989-06-29 1999-02-03 株式会社日立製作所 半導体装置及び半導体レーザ装置
US5065200A (en) * 1989-12-21 1991-11-12 Bell Communications Research, Inc. Geometry dependent doping and electronic devices produced thereby
US5091799A (en) * 1990-10-31 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Buried heterostructure laser modulator
JPH0555711A (ja) * 1991-08-22 1993-03-05 Furukawa Electric Co Ltd:The 半導体レーザ素子とその製造方法
EP0544968B1 (de) * 1991-12-05 1995-09-27 International Business Machines Corporation Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode
US5355386A (en) * 1992-11-17 1994-10-11 Gte Laboratories Incorporated Monolithically integrated semiconductor structure and method of fabricating such structure
JP3234086B2 (ja) * 1994-01-18 2001-12-04 キヤノン株式会社 光半導体デバイス及びその製造方法
US5563902A (en) * 1994-08-23 1996-10-08 Samsung Electronics, Co. Ltd. Semiconductor ridge waveguide laser with lateral current injection
DE19911433B4 (de) * 1999-03-04 2006-06-08 Infineon Technologies Ag Optische Sendeanordnung
WO2001088993A2 (en) 2000-05-19 2001-11-22 Mcmaster University A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES
US6797533B2 (en) * 2000-05-19 2004-09-28 Mcmaster University Quantum well intermixing in InGaAsP structures induced by low temperature grown InP
US6731850B1 (en) 2001-11-16 2004-05-04 Fox-Tek Single-waveguide integrated wavelength demux photodetector and method of making it
US6888666B1 (en) 2001-11-16 2005-05-03 Dakota Investment Group, Inc. Dynamically reconfigurable optical amplification element
US6628686B1 (en) 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
US6594295B1 (en) 2001-11-16 2003-07-15 Fox-Tek, Inc. Semiconductor laser with disordered and non-disordered quantum well regions
US6996149B2 (en) * 2002-02-19 2006-02-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
US7982205B2 (en) * 2006-01-12 2011-07-19 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
FR2998980A1 (fr) * 2012-11-30 2014-06-06 St Microelectronics Sa Modele de simulation compact pour un modulateur optique
CN103427332B (zh) * 2013-08-08 2015-09-09 中国科学院半导体研究所 硅基锗激光器及其制备方法
US11398715B2 (en) * 2018-02-26 2022-07-26 Panasonic Holdings Corporation Semiconductor light emitting device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127092A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Semiconductor laser
US4334311A (en) * 1980-05-13 1982-06-08 Mitsubishi Denki Kabushiki Kaisha Transverse junction stripe semiconductor laser device
JPS5765818A (en) * 1980-10-09 1982-04-21 Nissan Motor Co Ltd Engine with turbocharger
JPS57134860U (de) * 1981-02-18 1982-08-23
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
JPS57198685A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Semiconductor light emitting element
DE3279014D1 (en) * 1981-06-11 1988-10-13 Honeywell Inc Electro-optic element and method of making the same
JPS5831170A (ja) * 1981-08-18 1983-02-23 住江織物株式会社 タフテツドカ−ペツトの裏打ち方法
JPS5839085A (ja) * 1981-08-31 1983-03-07 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
JPS59103415A (ja) * 1982-12-06 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> スイツチト・キヤパシタ
JPS59167084A (ja) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置

Also Published As

Publication number Publication date
DE3685755T2 (de) 1993-02-04
EP0261262B1 (de) 1992-06-17
US4805179A (en) 1989-02-14
EP0261262A1 (de) 1988-03-30
JPH0553317B2 (de) 1993-08-09
JPS6384186A (ja) 1988-04-14

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