KR860003666A - 반도체 집적회로장치 및 그 제조방법 - Google Patents

반도체 집적회로장치 및 그 제조방법 Download PDF

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KR860003666A
KR860003666A KR1019850008056A KR850008056A KR860003666A KR 860003666 A KR860003666 A KR 860003666A KR 1019850008056 A KR1019850008056 A KR 1019850008056A KR 850008056 A KR850008056 A KR 850008056A KR 860003666 A KR860003666 A KR 860003666A
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compound semiconductor
laminate
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surface region
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도시오 오오시마
나오끼 요꼬야마
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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Abstract

내용 없음

Description

반도체 집적회로 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 내지 3도는 본 발명의 실시예에 따른 여러 제조 단계에서 GaAs IC장치의 개략 부분 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반절연GaAs기판 2 : n+형 GaAs층
3 : n형 GaAs층 4 : p+형 GaAs층
5 : n형 A1GaAs층 6 : n+형 GaAs층
7 : 홈 8 : 능동영역
9 : GaAs층

Claims (17)

  1. 발절연 화합물 반도체표면 영역을 갖춘 화합물 반도체 기판 ; 상기 표면 영역위에 형성되는 능동소자 적층판 ; 상기 적층판을 통하여 상기 표면 영역으로 뻗어 있는 반절연 화합물 반도체로 구성되는, 능동소자 상호간을 분리시키기 위한 분리영역 ; 및 각각 상기 적층판의 분리된 영역에 의해 둘러쌓이는 능동소자로 이루어지는 것을 특징으로 하는 반도체 집적회로 장치.
  2. 제1항에 있어서, 상기 기판의 화합물 반도체는 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치.
  3. 3. 제2항에 있어서, 상기 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxIn1-xAsxSb1-x, InxGayAl1-x-yP,InxAl1-xPxP1-x, InxAl1-xPxSb1-x, 및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1)로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치.
  4. 제1항에 있어서, 상기 표면 영역의 화합물 반도체는 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치.
  5. 제4항에 있어서, 상기 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxAl1-xAsxSb1-x, InxGayAl1-xP, InxAl1-xPxAs1-x, InxAl1-xPxSb1-x, 및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1))로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치.
  6. 제1항에 있어서, 상기 분리영역의 반절연 화합물 반도체는 진성 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치.
  7. 제6항에 있어서, 상기 진성 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxAl1-xAsxSb1-x, InxGayAl1-x-yP, InxAl1-xPxAs1-x, InxAl1-xPxSb1-x및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1))로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치.
  8. 제1항에 있어서, 상기 능동소자 적층판은 p형 층과 n형층으로 이루어지는 것을 특징으로 하는 반도체 집적회로 장치.
  9. 제1항에 있어서, 상기 능동소자 적층판은 p형과 n형 도전형으로부터 선택된 1도전형을 가진 화합물 반도체층으로 이루어지는 것을 특징으로 하는 반도체 집적회로 장치.
  10. 발절연 화합물 반도체표면 영역을 갖춘 화합물 반도체 기판 : 상기 표면 영역위에 형성되며 제1도전형을 갖는 화합물 반도체층으로 구성되는 능동소자 적층판 : 상기 적층판을 통하여 상기 표면 영역으로 뻗어 있으며 상기 제1도전형과 반대인 제2도전형을 가진 화합물 반도체로 구성되어 능동소자 상호간을 분리시키기 위한 분리영역 ; 및 각각 상기 적층판의 분리된 영역에 의해 둘러 쌓인 능동소자로 구성되는 것을 특징으로 하는 반도체 집적회로 장치.
  11. 제10항에 있어서, 상기 표면영역, 상기 적층판 및 상기 분리영역의 화합물 반도체는 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치.
  12. 제11항에 있어서, 상기 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxAl1-xAsxSb1-x, InxGayAl1-x-yP, InxAl1-xPxAs1-x, InxAl1-xPxSb1-x, 및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1))로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치.
  13. 반절연 화합물 반도체표면 영역을 갖춘 화합물 반도체 기판을 구비하고 ; 상기 표면 영역위에 화합물 반도체층으로 이루어지는 능동소자 적층판을 형성하고 ; 상기 적층판 부분과 표면영역을 에칭함에 의해 상기 표면 영역으로 뻗어 있는 홈을 형성하고 ; 능동소자 상호간을 분리시키기 위한 분리영역을 형성하기 위하여 반절연 화합물 반도체로 상기 홈을 채우고 ; 그리고 상기 적층판의 분리된 영역내에 능동소자를 형성하는 단계로 구성되는 것을 특징으로 하는 반도체 집적회로 장치를 제조하는 방법.
  14. 제13항에 있어서, 상기 표면영역과 상기 적층판의 화합물 반도체는 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치를 제조하는 방법.
  15. 제14항에 있어서, 상기 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxAl1-xAsxSb1-x, InxGayAl1-x-yP, InxAl1-xPxAs1-x, InxAl1-xPxAs1-x, InxAl1-xPxSb1-x, 및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1))로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치를 제조하는 방법.
  16. 제13항에 있어서, 상기 분리영역의 반절연 화합물 반도체는 진성 III-V족 화합물 반도체인 것을 특징으로 하는 반도체 집적회로 장치를 제조하는 방법.
  17. 제16항에 있어서, 상기 진성 화합물 반도체는 GaxIn1-xAsxP1-x, GaxAl1-xAsyP1-y, GaxAl1-xAsxSb1-x, InxGayAl1-x-yP, InxAl1-xPxAs1-x, InxAl1-xPxSb1-x, 및 GaxAl1-xPxSb1-x(여기서 0≤x≤1이고, 0≤y≤1))로 구성되는 그룹으로부터 선택된 재료인 것을 특징으로 하는 반도체 집적회로 장치를 제조하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850008056A 1984-10-31 1985-10-30 반도체 집적회로 장치 및 그 제조 방법 KR900000585B1 (ko)

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JP59-229181 1984-10-31
JP59229181A JPS61107758A (ja) 1984-10-31 1984-10-31 ＧａＡｓ集積回路及びその製造方法

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KR900000585B1 KR900000585B1 (ko) 1990-01-31

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US (1) US4837178A (ko)
EP (1) EP0180457B1 (ko)
JP (1) JPS61107758A (ko)
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DE (1) DE3586525T2 (ko)

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JPH02237049A (ja) * 1989-03-09 1990-09-19 Nec Corp 半導体集積装置及びその製造方法
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Also Published As

Publication number Publication date
JPS61107758A (ja) 1986-05-26
EP0180457A2 (en) 1986-05-07
EP0180457A3 (en) 1989-06-07
KR900000585B1 (ko) 1990-01-31
DE3586525T2 (de) 1993-01-14
DE3586525D1 (de) 1992-09-24
EP0180457B1 (en) 1992-08-19
US4837178A (en) 1989-06-06

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