JP2011253987A - 半導体受光素子及び光モジュール - Google Patents
半導体受光素子及び光モジュール Download PDFInfo
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- JP2011253987A JP2011253987A JP2010127802A JP2010127802A JP2011253987A JP 2011253987 A JP2011253987 A JP 2011253987A JP 2010127802 A JP2010127802 A JP 2010127802A JP 2010127802 A JP2010127802 A JP 2010127802A JP 2011253987 A JP2011253987 A JP 2011253987A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 230000003287 optical effect Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 38
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 13
- 230000002950 deficient Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】n型InP基板32は、互いに対向する表面と裏面を有する。n型InP基板32の表面上にn型InGaAs層34が設けられている。このn型InGaAs層34は、n型InP基板32のバンドギャップよりも小さいバンドギャップを持つ。n型InGaAs層34上にn型InP層36が設けられている。n型InP層36の一部にp型領域40が設けられている。n型InP層36にカソード電極42が接続され、p型領域40にアノード電極44が接続されている。n型InP基板32の裏面上に低反射膜46が設けられている。n型InP基板32の裏面が入射光の受光面である。n型InP基板32の裏面には、低反射膜46よりも入射光に対する反射率が高い物質又は構造が設けられていない。
【選択図】図3
Description
図1は、実施の形態1に係る光モジュールを示す断面図である。ステム10上に台座12,14が実装されている。台座12の側面に半導体発光素子16が接合されている。台座14上に、レーザダイオードなどの半導体受光素子18が接合されている。この半導体受光素子18は、半導体発光素子16の背面に配置され、半導体発光素子16の背面から出射された背面光を入射光として受光する。リードピン20,22がステム10を貫通している。
図8は、実施の形態2に係る半導体受光素子を示す断面図である。n型InP基板32の裏面は曲面である。これにより、n型InP基板32の裏面で反射されて半導体受光素子に戻る反射光が更に小さくなるため、戻り光不良を更に確実に防ぐことができる。
図9は、実施の形態3に係る半導体受光素子を示す断面図である。n型InP基板32の裏面は、斜めにカットされて、入射光の入射方向に対して傾いている。これにより、n型InP基板32の裏面で反射されて半導体受光素子に戻る反射光が更に小さくなるため、戻り光不良を更に確実に防ぐことができる。
図10は、実施の形態4に係る半導体受光素子を示す断面図である。n型InP基板32の裏面は、n型InP基板32の表面やn型InP層36の表面などに比べて荒れている。これにより、n型InP基板32の裏面で反射されて半導体受光素子に戻る反射光が更に小さくなるため、戻り光不良を更に確実に防ぐことができる。
16 半導体発光素子
18 半導体受光素子
24 配線(第1の配線)
26 配線(第2の配線)
32 n型InP基板(半導体基板)
34 n型InGaAs層(第1の半導体層)
36 n型InP層(第2の半導体層)
40 p型領域(半導体領域)
42 カソード電極(第1の電極)
44 アノード電極(第2の電極)
46 低反射膜
Claims (6)
- 互いに対向する第1の主面と第2の主面を有する第1導電型の半導体基板と、
前記半導体基板の前記第1の主面上に設けられ、前記半導体基板のバンドギャップよりも小さいバンドギャップを持つ第1導電型の第1の半導体層と、
前記第1の半導体層上に設けられた第1導電型の第2の半導体層と、
前記第2の半導体層の一部に設けられた第2導電型の半導体領域と、
前記第2の半導体層に接続された第1の電極と、
前記半導体領域に接続された第2の電極と、
前記半導体基板の前記第2の主面上に設けられた低反射膜とを備え、
前記半導体基板の前記第2の主面が入射光の受光面であり、
前記半導体基板の前記第2の主面には、前記低反射膜よりも前記入射光に対する反射率が高い物質又は構造が設けられていないことを特徴とする半導体受光素子。 - 前記半導体基板の前記第2の主面は曲面であることを特徴とする請求項1に記載の半導体受光素子。
- 前記半導体基板の前記第2の主面は前記入射光の入射方向に対して傾いていることを特徴とする請求項1に記載の半導体受光素子。
- 前記半導体基板の前記第2の主面は前記第1の主面に比べて荒れていることを特徴とする請求項1に記載の半導体受光素子。
- 半導体発光素子と、
前記半導体発光素子の背面に配置され、前記半導体発光素子の背面から出射された背面光を前記入射光として受光する請求項1〜4の何れか1項に記載の半導体受光素子とを備えることを特徴とする光モジュール。 - 前記半導体受光素子の前記第1の電極及び前記第2の電極にそれぞれ接続された第1の配線及び第2の配線を有する台座を更に備えることを特徴とする請求項5に記載の光モジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010127802A JP2011253987A (ja) | 2010-06-03 | 2010-06-03 | 半導体受光素子及び光モジュール |
US13/017,072 US8330243B2 (en) | 2010-06-03 | 2011-01-31 | Semiconductor light-receiving element and optical module |
TW100103612A TW201145502A (en) | 2010-06-03 | 2011-01-31 | Semiconductor light-receiving element and optical module |
DE102011076887A DE102011076887A1 (de) | 2010-06-03 | 2011-06-01 | Licht empfangendes Halbleiterelement und optisches Modul |
KR1020110052557A KR101296192B1 (ko) | 2010-06-03 | 2011-06-01 | 반도체 수광소자 및 광 모듈 |
CN2011101473865A CN102270666A (zh) | 2010-06-03 | 2011-06-02 | 半导体受光元件以及光模块 |
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JP2010127802A JP2011253987A (ja) | 2010-06-03 | 2010-06-03 | 半導体受光素子及び光モジュール |
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JP2011253987A true JP2011253987A (ja) | 2011-12-15 |
JP2011253987A5 JP2011253987A5 (ja) | 2013-05-30 |
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JP2010127802A Pending JP2011253987A (ja) | 2010-06-03 | 2010-06-03 | 半導体受光素子及び光モジュール |
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US (1) | US8330243B2 (ja) |
JP (1) | JP2011253987A (ja) |
KR (1) | KR101296192B1 (ja) |
CN (1) | CN102270666A (ja) |
DE (1) | DE102011076887A1 (ja) |
TW (1) | TW201145502A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015176904A (ja) * | 2014-03-13 | 2015-10-05 | 三菱電機株式会社 | 半導体受光素子 |
JP2018066888A (ja) * | 2016-10-20 | 2018-04-26 | 住友電気工業株式会社 | 光モジュール |
US10365448B2 (en) | 2017-12-15 | 2019-07-30 | Sumitomo Electric Industries, Ltd. | Optical module having two lens system and monitor photodiode between two lenses |
WO2022044556A1 (ja) * | 2020-08-26 | 2022-03-03 | 浜松ホトニクス株式会社 | 光検出装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6518076B2 (ja) * | 2015-02-16 | 2019-05-22 | エイブリック株式会社 | 受光素子を有する光検出半導体装置 |
DE102020117238A1 (de) * | 2020-06-30 | 2021-12-30 | First Sensor AG | Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement |
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JPH045870A (ja) * | 1990-04-23 | 1992-01-09 | Hitachi Ltd | 光半導体装置及びそれを用いた受光器 |
JPH05152599A (ja) * | 1991-11-29 | 1993-06-18 | Nec Corp | 半導体受光素子 |
JPH0653538A (ja) * | 1992-07-28 | 1994-02-25 | Toshiba Corp | 半導体受光素子 |
JP2000036615A (ja) * | 1998-07-21 | 2000-02-02 | Sumitomo Electric Ind Ltd | 受光素子及び受光素子モジュール |
WO2002063730A1 (en) * | 2001-02-05 | 2002-08-15 | Sumitomo Electric Industries, Ltd. | Optical transmitter |
JP2008047580A (ja) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
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-
2010
- 2010-06-03 JP JP2010127802A patent/JP2011253987A/ja active Pending
-
2011
- 2011-01-31 TW TW100103612A patent/TW201145502A/zh unknown
- 2011-01-31 US US13/017,072 patent/US8330243B2/en not_active Expired - Fee Related
- 2011-06-01 KR KR1020110052557A patent/KR101296192B1/ko not_active IP Right Cessation
- 2011-06-01 DE DE102011076887A patent/DE102011076887A1/de not_active Ceased
- 2011-06-02 CN CN2011101473865A patent/CN102270666A/zh active Pending
Patent Citations (6)
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JPH045870A (ja) * | 1990-04-23 | 1992-01-09 | Hitachi Ltd | 光半導体装置及びそれを用いた受光器 |
JPH05152599A (ja) * | 1991-11-29 | 1993-06-18 | Nec Corp | 半導体受光素子 |
JPH0653538A (ja) * | 1992-07-28 | 1994-02-25 | Toshiba Corp | 半導体受光素子 |
JP2000036615A (ja) * | 1998-07-21 | 2000-02-02 | Sumitomo Electric Ind Ltd | 受光素子及び受光素子モジュール |
WO2002063730A1 (en) * | 2001-02-05 | 2002-08-15 | Sumitomo Electric Industries, Ltd. | Optical transmitter |
JP2008047580A (ja) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015176904A (ja) * | 2014-03-13 | 2015-10-05 | 三菱電機株式会社 | 半導体受光素子 |
JP2018066888A (ja) * | 2016-10-20 | 2018-04-26 | 住友電気工業株式会社 | 光モジュール |
US10365448B2 (en) | 2017-12-15 | 2019-07-30 | Sumitomo Electric Industries, Ltd. | Optical module having two lens system and monitor photodiode between two lenses |
WO2022044556A1 (ja) * | 2020-08-26 | 2022-03-03 | 浜松ホトニクス株式会社 | 光検出装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102270666A (zh) | 2011-12-07 |
KR20110132990A (ko) | 2011-12-09 |
DE102011076887A1 (de) | 2011-12-08 |
KR101296192B1 (ko) | 2013-08-13 |
US8330243B2 (en) | 2012-12-11 |
US20110297967A1 (en) | 2011-12-08 |
TW201145502A (en) | 2011-12-16 |
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