JP6658910B2 - 裏面入射型受光素子及び光モジュール - Google Patents
裏面入射型受光素子及び光モジュール Download PDFInfo
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- JP6658910B2 JP6658910B2 JP2018547021A JP2018547021A JP6658910B2 JP 6658910 B2 JP6658910 B2 JP 6658910B2 JP 2018547021 A JP2018547021 A JP 2018547021A JP 2018547021 A JP2018547021 A JP 2018547021A JP 6658910 B2 JP6658910 B2 JP 6658910B2
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- 230000003287 optical effect Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Description
図1は、本発明の実施の形態1に係る裏面入射型受光素子を示す断面図である。基板1は表面と表面に対向する裏面とを有する半絶縁性InP基板である。基板1の表面にn型層2、AlInAsの増倍層3、InPのp型電界制御層4、InGaAsの光吸収層5、及びInPの窓層6が順に積層されている。窓層6の一部にp型領域7が形成されている。アノード電極8がp型領域7の上に形成され、p型領域7に接続されている。
図5は、本発明の実施の形態2に係る裏面入射型受光素子を示す断面図である。光吸収層からn型層までエッチングされてFe−InP又はRu−InPを含む半絶縁性層32で埋め込まれている。第3の接続孔13は半絶縁性層32に形成されている。これにより、アノード配線15と半導体層との距離が拡がるため、信頼が向上する。その他の構成及び効果は実施の形態1と同様である。
図6は、本発明の実施の形態3に係る裏面入射型受光素子を示す断面図である。n型層2と増倍層3との間にInPでないエッチングストッパ層33が挿入されている。基板側からエッチングして第2の接続孔12を形成する時、及びエピ面側からエッチングして第3の接続孔13を形成する時に選択エッチングが可能となる。このため、第2及び第3の接続孔12,13を容易に形成することができる。その他の構成及び効果は実施の形態1と同様である。
図7は、本発明の実施の形態4に係る裏面入射型受光素子を示す断面図である。基板1とアノードパッド9及びカソードパッド10との間に絶縁膜34が形成されている。これにより、基板1の極性が不問となるため、導電性基板を用いることができる。また、基板の極性に依らずにアノードパッド9及びカソードパッド10を形成できるため、作製が容易になる。その他の構成及び効果は実施の形態3と同様である。
図8は、本発明の実施の形態5に係る裏面入射型受光素子を示す断面図である。第2及び第3の接続孔12,13は基板1から窓層6まで一続きに貫通する。これにより、基板両側からエッチングせずに済むため、作製が容易になる。その他の構成及び効果は実施の形態1と同様である。
Claims (6)
- 表面と前記表面に対向する裏面とを有する基板と、
前記表面に順に積層されたn型層、増倍層、p型電界制御層、光吸収層、及び窓層と、
前記窓層の一部に形成されたp型領域と、
前記p型領域の上に形成され、前記p型領域に接続されたアノード電極と、
前記裏面に形成されたアノードパッド及びカソードパッドとを備え、
第1及び第2の接続孔が前記基板を貫通し、
第3の接続孔が前記窓層から前記n型層まで貫通し、
前記カソードパッドは前記第1の接続孔を介して前記n型層に電気的に接続され、
前記アノードパッドは前記第2及び第3の接続孔を介して前記アノード電極に電気的に接続され、
前記裏面に受光領域を有することを特徴とする裏面入射型受光素子。 - 前記窓層から前記n型層までエッチングされて半絶縁性層で埋め込まれ、
前記第3の接続孔は前記半絶縁性層に形成されていることを特徴とする請求項1に記載の裏面入射型受光素子。 - 前記n型層と前記増倍層との間に挿入されたエッチングストッパ層を更に備えることを特徴とする請求項1又は2に記載の裏面入射型受光素子。
- 前記第2及び第3の接続孔は前記基板から前記窓層まで一続きに貫通することを特徴とする請求項1に記載の裏面入射型受光素子。
- 前記基板と前記アノードパッド及び前記カソードパッドとの間に形成された絶縁膜を更に備え、
前記基板は導電性基板であることを特徴とする請求項1〜4の何れか1項に記載の裏面入射型受光素子。 - サブマウントと、
前記サブマウントの上に前記受光領域を上にして固定された請求項1〜5の何れか1項に記載の裏面入射型受光素子と、
第1及び第2の回路部品と、
前記カソードパッドを第1の回路部品に接続する第1のワイヤと、
前記アノードパッドを第2の回路部品に接続する第2のワイヤとを備えることを特徴とする光モジュール。
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PCT/JP2016/082033 WO2018078788A1 (ja) | 2016-10-28 | 2016-10-28 | 裏面入射型受光素子及び光モジュール |
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JP2021027277A (ja) * | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
US20240053196A1 (en) * | 2021-01-26 | 2024-02-15 | Sumitomo Electric Industries, Ltd. | Optical receiver |
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JP4611066B2 (ja) * | 2004-04-13 | 2011-01-12 | 三菱電機株式会社 | アバランシェフォトダイオード |
JP2006237186A (ja) * | 2005-02-24 | 2006-09-07 | Mitsubishi Electric Corp | 半導体受光素子およびその製造方法 |
JP2006253548A (ja) * | 2005-03-14 | 2006-09-21 | Mitsubishi Electric Corp | 半導体受光素子 |
JP5050925B2 (ja) * | 2008-02-28 | 2012-10-17 | 三菱電機株式会社 | 半導体受光素子 |
JP5262293B2 (ja) * | 2008-05-26 | 2013-08-14 | 三菱電機株式会社 | 光半導体装置 |
JP2009290161A (ja) * | 2008-06-02 | 2009-12-10 | Mitsubishi Electric Corp | 光半導体装置 |
US20100108893A1 (en) * | 2008-11-04 | 2010-05-06 | Array Optronix, Inc. | Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports |
JP5185207B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5444994B2 (ja) * | 2009-09-25 | 2014-03-19 | 三菱電機株式会社 | 半導体受光素子 |
JP2011253904A (ja) | 2010-06-01 | 2011-12-15 | Mitsubishi Electric Corp | 光受信モジュール |
GB201014843D0 (en) * | 2010-09-08 | 2010-10-20 | Univ Edinburgh | Single photon avalanche diode for CMOS circuits |
US20190013430A1 (en) * | 2010-10-28 | 2019-01-10 | Solar Junction Corporation | Optoelectronic devices including dilute nitride |
JP2013058656A (ja) * | 2011-09-09 | 2013-03-28 | Mitsubishi Electric Corp | 裏面入射型半導体受光素子 |
JP5700561B2 (ja) * | 2011-12-12 | 2015-04-15 | 日本電信電話株式会社 | 受光素子 |
SG193092A1 (en) * | 2012-02-06 | 2013-09-30 | Agency Science Tech & Res | Semiconductor photomultiplier device |
US20140167200A1 (en) * | 2012-12-19 | 2014-06-19 | Agency For Science, Technology And Research | Photodetector and method for forming the same |
JP6104669B2 (ja) | 2013-03-28 | 2017-03-29 | 日本オクラロ株式会社 | 光受信モジュール |
US10700225B2 (en) * | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) * | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
JP6602751B2 (ja) * | 2013-05-22 | 2019-11-06 | シー−ユアン ワン, | マイクロストラクチャ向上型吸収感光装置 |
JP6398409B2 (ja) * | 2014-07-16 | 2018-10-03 | 三菱電機株式会社 | 受光素子 |
JP2016039315A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社東芝 | 固体撮像素子 |
JP6332096B2 (ja) * | 2015-03-23 | 2018-05-30 | 三菱電機株式会社 | 半導体受光素子 |
CN107819515B (zh) * | 2017-11-20 | 2023-08-04 | 苏州卓昱光子科技有限公司 | 一种硅光子芯片高度集成多通道光收发模块和有源光缆 |
JP6790004B2 (ja) * | 2018-02-20 | 2020-11-25 | 株式会社東芝 | 半導体受光素子およびその製造方法 |
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US20190296175A1 (en) | 2019-09-26 |
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JPWO2018078788A1 (ja) | 2019-03-28 |
CN109844963A (zh) | 2019-06-04 |
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