JP5185207B2 - フォトダイオードアレイ - Google Patents
フォトダイオードアレイ Download PDFInfo
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- JP5185207B2 JP5185207B2 JP2009136419A JP2009136419A JP5185207B2 JP 5185207 B2 JP5185207 B2 JP 5185207B2 JP 2009136419 A JP2009136419 A JP 2009136419A JP 2009136419 A JP2009136419 A JP 2009136419A JP 5185207 B2 JP5185207 B2 JP 5185207B2
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- 239000004065 semiconductor Substances 0.000 claims description 284
- 239000000758 substrate Substances 0.000 claims description 138
- 238000001514 detection method Methods 0.000 claims description 83
- 230000001788 irregular Effects 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000969 carrier Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 101100243945 Fusarium vanettenii PDAT9 gene Proteins 0.000 description 54
- 208000012204 PDA1 Diseases 0.000 description 54
- 101150102492 pda1 gene Proteins 0.000 description 54
- 230000035945 sensitivity Effects 0.000 description 50
- 238000004519 manufacturing process Methods 0.000 description 37
- 230000003595 spectral effect Effects 0.000 description 37
- 230000001681 protective effect Effects 0.000 description 36
- 238000000926 separation method Methods 0.000 description 33
- 238000009825 accumulation Methods 0.000 description 32
- 239000012535 impurity Substances 0.000 description 21
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 208000030770 patent ductus arteriosus 3 Diseases 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 101001072191 Homo sapiens Protein disulfide-isomerase A2 Proteins 0.000 description 10
- 102100036351 Protein disulfide-isomerase A2 Human genes 0.000 description 10
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- 238000002161 passivation Methods 0.000 description 10
- 208000030825 patent ductus arteriosus 2 Diseases 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 101100123718 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pda-1 gene Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/035281—Shape of the body
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
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Description
図1〜図10を参照して、第1実施形態に係るフォトダイオードの製造方法について説明する。図1〜図10は、第1実施形態に係るフォトダイオードの製造方法を説明するための図である。
図14〜図16を参照して、第2実施形態に係るフォトダイオードの製造方法について説明する。図14〜図16は、第2実施形態に係るフォトダイオードの製造方法を説明するための図である。
図17〜図21を参照して、第3実施形態に係るフォトダイオードの製造方法について説明する。図17〜図21は、第3実施形態に係るフォトダイオードの製造方法を説明するための図である。
図22〜図24を参照して、第4実施形態に係るフォトダイオードの製造方法について説明する。図22〜図24は、第4実施形態に係るフォトダイオードの製造方法を説明するための図である。
図25及び図26を参照して、第5実施形態に係るフォトダイオードアレイPDA1の構成について説明する。図25は、第5実施形態に係るフォトダイオードアレイPDA1を概略的に示す平面図である。図26は、図25に示したフォトダイオードアレイPDA1のXXVI−XXVI線に沿った断面構成を示す図である。
図30を参照して、第6実施形態に係るフォトダイオードアレイPDA2の構成について説明する。図30は、第6実施形態に係るフォトダイオードアレイPDA2の断面構成を概略的に示す図である。第6実施形態に係るフォトダイオードアレイPDA2は、分離部40が遮光部を有している点で第5実施形態に係るフォトダイオードアレイPDA1と異なる。
図31を参照して、第7実施形態に係るフォトダイオードアレイPDA3の構成について説明する。図31は、第7実施形態に係るフォトダイオードアレイPDA3の断面構成を概略的に説明するための図である。第7実施形態に係るフォトダイオードアレイPDA3は、信号導線23が窒化シリコン膜上に形成されている点で第5実施形態に係るフォトダイオードアレイPDA1と異なる。
図32を参照して、第8実施形態に係るフォトダイオードアレイPDA4の構成について説明する。図32は、第8実施形態に係るフォトダイオードアレイPDA4の断面構成を概略的に示す図である。第8実施形態に係るフォトダイオードアレイPDA4は、分離部40を備えていない点で第5実施形態に係るフォトダイオードアレイPDA1と異なる。
Claims (6)
- 被検出光を入射させる複数の光検出チャンネルが第1導電型の半導体層を有するシリコン基板に形成されてなるフォトダイオードアレイであって、
第1導電型の前記半導体層上に形成され、当該半導体層との界面でpn接合を構成するとともに、前記被検出光の入射によって生じたキャリアをアバランシェ増倍させる複数の増倍領域を当該各増倍領域と前記各光検出チャンネルとが互いに対応するように有する第2導電型のエピタキシャル半導体層と、
2つの端部を有し、前記光検出チャンネルごとに設けられ、一方の前記端部を介して前記エピタキシャル半導体層と電気的に接続されると共に他方の前記端部を介して信号導線に接続される複数の抵抗と、を備え、
第1導電型の前記半導体層における少なくとも前記各光検出チャンネルに対応する表面に不規則な凹凸が形成されており、
第1導電型の前記半導体層における少なくとも前記各光検出チャンネルに対応する前記表面は、光学的に露出し、
不規則な前記凹凸が形成された前記表面に対向する面が光入射面とされて、前記光入射面から入射した光が前記シリコン基板内を進む、表面入射型であることを特徴とするフォトダイオードアレイ。 - 被検出光を入射させる複数の光検出チャンネルが第1導電型の半導体層を有するシリコン基板に形成されてなるフォトダイオードアレイであって、
第1導電型の前記半導体層上に形成され、前記被検出光の入射によって生じたキャリアをアバランシェ増倍させる複数の増倍領域を当該各増倍領域と前記各光検出チャンネルとが互いに対応するように有する第1導電型のエピタキシャル半導体層と、
前記第1導電型のエピタキシャル半導体層中に形成され、当該エピタキシャル半導体層との界面でpn接合を構成する第2導電型の半導体領域と、
2つの端部を有し、前記光検出チャンネルごとに設けられ、一方の前記端部を介して前記エピタキシャル半導体層中の前記第2導電型の半導体領域と電気的に接続されると共に他方の前記端部を介して信号導線に接続される複数の抵抗と、を備え、
第1導電型の前記半導体層における少なくとも前記各光検出チャンネルに対応する表面に不規則な凹凸が形成されており、
第1導電型の前記半導体層における少なくとも前記各光検出チャンネルに対応する前記表面は、光学的に露出し、
不規則な前記凹凸が形成された前記表面に対向する面が光入射面とされて、前記光入射面から入射した光が前記シリコン基板内を進む、表面入射型であることを特徴とするフォトダイオードアレイ。 - 第1導電型の前記半導体層における前記複数の光検出チャンネルの間に対応する表面は、不規則な凹凸が更に形成されていると共に、光学的に露出していることを特徴とする請求項1又は2に記載のフォトダイオードアレイ。
- 前記シリコン基板は、複数の光検出チャンネルが形成されている部分が該部分の周辺部分を残して薄化されていることを特徴とする請求項1〜3のいずれか一項に記載のフォトダイオードアレイ。
- 第1導電型の前記半導体層の厚みが、不規則な前記凹凸の高低差よりも大きいことを特徴とする請求項1〜4のいずれか一項に記載のフォトダイオードアレイ。
- 前記光入射面から入射し、前記シリコン基板内を進む光が、不規則な前記凹凸により反射、散乱、又は拡散されることを特徴とする請求項1〜5のいずれか一項に記載のフォトダイオードアレイ。
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US8994135B2 (en) | 2015-03-31 |
EP2403013B1 (en) | 2018-12-19 |
KR20110136789A (ko) | 2011-12-21 |
EP3467875A1 (en) | 2019-04-10 |
CN102334199A (zh) | 2012-01-25 |
TWI476906B (zh) | 2015-03-11 |
CN104201219A (zh) | 2014-12-10 |
EP2403013A1 (en) | 2012-01-04 |
US8742528B2 (en) | 2014-06-03 |
EP3467875B1 (en) | 2023-07-12 |
KR101708069B1 (ko) | 2017-02-17 |
TW201101469A (en) | 2011-01-01 |
US20110291218A1 (en) | 2011-12-01 |
CN102334199B (zh) | 2016-04-06 |
JP2010226073A (ja) | 2010-10-07 |
EP2403013A4 (en) | 2013-04-03 |
WO2010098225A1 (ja) | 2010-09-02 |
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