WO2003072500A1 - Procede de fabrication de silicium en forme de plaque, substrat pour la fabrication de silicium en forme de plaque, silicium en forme de plaque, cellule solaire utilisant du silicium en forme de plaque et module de cellules solaires - Google Patents

Procede de fabrication de silicium en forme de plaque, substrat pour la fabrication de silicium en forme de plaque, silicium en forme de plaque, cellule solaire utilisant du silicium en forme de plaque et module de cellules solaires Download PDF

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Publication number
WO2003072500A1
WO2003072500A1 PCT/JP2003/002000 JP0302000W WO03072500A1 WO 2003072500 A1 WO2003072500 A1 WO 2003072500A1 JP 0302000 W JP0302000 W JP 0302000W WO 03072500 A1 WO03072500 A1 WO 03072500A1
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WIPO (PCT)
Prior art keywords
silicon
plate
substrate
solar cell
hole
Prior art date
Application number
PCT/JP2003/002000
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English (en)
Japanese (ja)
Inventor
Ryuichi Oishi
Yoshihiro Tsukuda
Original Assignee
Sharp Kabushiki Kaisha
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Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to JP2003571211A priority Critical patent/JP4242294B2/ja
Priority to AU2003211282A priority patent/AU2003211282A1/en
Publication of WO2003072500A1 publication Critical patent/WO2003072500A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention se rapporte à du silicium en forme de plaque (11, 31) possédant une trou traversant (13A) et une partie découpée (31B), obtenu sans mise en oeuvre de traitements du type usinage au laser et usinage simple, et à coût réduit, de sorte qu'il est possible d'accroître la production pour la fabrication de cellules solaires. Le silicium en forme de plaque (11, 31) produit permet de fabriquer à faible coût une cellule solaire transparente offrant de grandes possibilités de conception, un module de cellules solaires et une cellule solaire émettrice à contacts arrières. L'invention concerne un procédé de fabrication de silicium en forme de plaque consistant à amener un substrat en contact avec du silicium en fusion et à faire croître un cristal de silicium en forme de plaque sur le substrat, ledit procédé se caractérisant en ce qu'il comporte une étape de formation d'un trou traversant (13A) et/ou d'une partie découpée (31B) dans le silicium en forme de plaque (11, 31) au cours de la croissance d'un cristal d'un silicium en forme de plaque sur ledit substrat.
PCT/JP2003/002000 2002-02-26 2003-02-24 Procede de fabrication de silicium en forme de plaque, substrat pour la fabrication de silicium en forme de plaque, silicium en forme de plaque, cellule solaire utilisant du silicium en forme de plaque et module de cellules solaires WO2003072500A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003571211A JP4242294B2 (ja) 2002-02-26 2003-02-24 板状シリコンの製造方法、板状シリコン製造用基板、板状シリコン、その板状シリコンを用いた太陽電池および太陽電池モジュール
AU2003211282A AU2003211282A1 (en) 2002-02-26 2003-02-24 Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002049218 2002-02-26
JP2002-49218 2002-02-26

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WO2003072500A1 true WO2003072500A1 (fr) 2003-09-04

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JP (1) JP4242294B2 (fr)
AU (1) AU2003211282A1 (fr)
TW (1) TWI239093B (fr)
WO (1) WO2003072500A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513363A (ja) * 2005-10-27 2009-04-02 アールジーエス・ディベロップメント・ビー．ブイ． 金属パネルに所定のパターンを製造するための方法並びに装置
JP2010080489A (ja) * 2008-09-24 2010-04-08 Sanyo Electric Co Ltd 太陽電池モジュール及びその製造方法
WO2011102256A1 (fr) * 2010-02-19 2011-08-25 東レエンジニアリング株式会社 Module de cellule solaire
WO2011069605A3 (fr) * 2009-12-11 2011-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé
US8178777B2 (en) 2003-10-08 2012-05-15 Sharp Kabushiki Kaisha Method of manufacturing solar cell and solar cell manufactured thereby
JP2013065912A (ja) * 2009-02-24 2013-04-11 Hamamatsu Photonics Kk フォトダイオードの製造方法及びフォトダイオード
WO2013128568A1 (fr) * 2012-02-28 2013-09-06 富士機械製造株式会社 Dispositif de câblage de chaîne, procédé de câblage, dispositif de production de module de photopile et procédé de production
JP2013544037A (ja) * 2011-05-27 2013-12-09 シーエスアイ セルズ カンパニー リミテッド 背面接触式結晶シリコン太陽電池セルの製造方法
US8916945B2 (en) 2009-02-24 2014-12-23 Hamamatsu Photonics K.K. Semiconductor light-detecting element
US8994135B2 (en) 2009-02-24 2015-03-31 Hamamatsu Photonics K.K. Photodiode and photodiode array
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
US9190551B2 (en) 2009-02-24 2015-11-17 Hamamatsu Photonics K.K. Photodiode and photodiode array
US9209342B2 (en) 2011-05-27 2015-12-08 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
JP2017069395A (ja) * 2015-09-30 2017-04-06 三菱化学株式会社 有機薄膜太陽電池モジュール
EP3306675A4 (fr) * 2016-03-21 2018-07-25 Suzhou Coop & Inno Green Energy Technology Co., Ltd. Module de cellule utilisant un processus de contact arrière et son procédé de fabrication

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8071401B2 (en) * 2009-12-10 2011-12-06 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010044163A1 (en) * 1999-11-30 2001-11-22 Yoshihiro Tsukuda Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell
JP2002057116A (ja) * 2000-08-10 2002-02-22 Sharp Corp 結晶シートの製造装置及び製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010044163A1 (en) * 1999-11-30 2001-11-22 Yoshihiro Tsukuda Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell
JP2002057116A (ja) * 2000-08-10 2002-02-22 Sharp Corp 結晶シートの製造装置及び製造方法

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8178777B2 (en) 2003-10-08 2012-05-15 Sharp Kabushiki Kaisha Method of manufacturing solar cell and solar cell manufactured thereby
JP2009513363A (ja) * 2005-10-27 2009-04-02 アールジーエス・ディベロップメント・ビー．ブイ． 金属パネルに所定のパターンを製造するための方法並びに装置
JP2010080489A (ja) * 2008-09-24 2010-04-08 Sanyo Electric Co Ltd 太陽電池モジュール及びその製造方法
US9419159B2 (en) 2009-02-24 2016-08-16 Hamamatsu Photonics K.K. Semiconductor light-detecting element
US9190551B2 (en) 2009-02-24 2015-11-17 Hamamatsu Photonics K.K. Photodiode and photodiode array
JP2013065912A (ja) * 2009-02-24 2013-04-11 Hamamatsu Photonics Kk フォトダイオードの製造方法及びフォトダイオード
US9972729B2 (en) 2009-02-24 2018-05-15 Hamamatsu Photonics K.K. Photodiode and photodiode array
US9614109B2 (en) 2009-02-24 2017-04-04 Hamamatsu Photonics K.K. Photodiode and photodiode array
US8916945B2 (en) 2009-02-24 2014-12-23 Hamamatsu Photonics K.K. Semiconductor light-detecting element
US8994135B2 (en) 2009-02-24 2015-03-31 Hamamatsu Photonics K.K. Photodiode and photodiode array
CN102714253A (zh) * 2009-12-11 2012-10-03 弗劳恩霍弗应用技术研究院 具有长条形孔的外延穿孔卷绕式太阳能电池及其制造方法
WO2011069605A3 (fr) * 2009-12-11 2011-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé
JP2011171542A (ja) * 2010-02-19 2011-09-01 Toray Eng Co Ltd 太陽電池モジュール
US8796541B2 (en) 2010-02-19 2014-08-05 Toray Engineering Co., Ltd. Solar cell module
WO2011102256A1 (fr) * 2010-02-19 2011-08-25 東レエンジニアリング株式会社 Module de cellule solaire
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
US9209342B2 (en) 2011-05-27 2015-12-08 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
US9281435B2 (en) 2011-05-27 2016-03-08 Csi Cells Co., Ltd Light to current converter devices and methods of manufacturing the same
JP2013544037A (ja) * 2011-05-27 2013-12-09 シーエスアイ セルズ カンパニー リミテッド 背面接触式結晶シリコン太陽電池セルの製造方法
JPWO2013128568A1 (ja) * 2012-02-28 2015-07-30 富士機械製造株式会社 ストリング配線装置および配線方法ならびに太陽電池モジュール製造装置および製造方法
US9673349B2 (en) 2012-02-28 2017-06-06 Fuji Machine Mfg. Co., Ltd. Stringing device and stringing method as well as photovoltaic module manufacturing device and manufacturing method
WO2013128568A1 (fr) * 2012-02-28 2013-09-06 富士機械製造株式会社 Dispositif de câblage de chaîne, procédé de câblage, dispositif de production de module de photopile et procédé de production
JP2017069395A (ja) * 2015-09-30 2017-04-06 三菱化学株式会社 有機薄膜太陽電池モジュール
EP3306675A4 (fr) * 2016-03-21 2018-07-25 Suzhou Coop & Inno Green Energy Technology Co., Ltd. Module de cellule utilisant un processus de contact arrière et son procédé de fabrication

Also Published As

Publication number Publication date
JPWO2003072500A1 (ja) 2005-06-16
TWI239093B (en) 2005-09-01
AU2003211282A1 (en) 2003-09-09
TW200405543A (en) 2004-04-01
JP4242294B2 (ja) 2009-03-25

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