JP2011171542A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2011171542A JP2011171542A JP2010034482A JP2010034482A JP2011171542A JP 2011171542 A JP2011171542 A JP 2011171542A JP 2010034482 A JP2010034482 A JP 2010034482A JP 2010034482 A JP2010034482 A JP 2010034482A JP 2011171542 A JP2011171542 A JP 2011171542A
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- solar cell
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 31
- 238000002834 transmittance Methods 0.000 abstract description 16
- 238000003475 lamination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
- B32B37/22—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of both discrete and continuous layers
- B32B37/223—One or more of the layers being plastic
- B32B37/226—Laminating sheets, panels or inserts between two continuous plastic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2367/00—Polyesters, e.g. PET, i.e. polyethylene terephthalate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】導電性基板と、この導電性基板上に下部電極層と、光電変換層と、上部電極層とがこの順に積層された太陽電池セルを備える太陽電池モジュールであって、この太陽電池セルには、前記導電性基板から前記上部電極層まで積層方向に貫通する貫通開口部が全面に亘って複数形成される構成とする。
【選択図】図2
Description
10 太陽電池部
11 太陽電池セル
11a 貫通開口部
12 重複連結部
21 導電性基板
22 下部電極層
23 光電変換層
24 上部電極層
Claims (6)
- 導電性基板と、この導電性基板上に下部電極層と、光電変換層と、上部電極層とがこの順に積層された太陽電池セルを備える太陽電池モジュールであって、
この太陽電池セルには、前記導電性基板から前記上部電極層まで積層方向に貫通する貫通開口部が全面に亘って複数形成されていることを特徴とする太陽電池モジュール。 - 前記貫通開口部は、厚み方向に貫通する貫通孔を有する導電性基板上に、下部電極層、光電変換層、上部電極層をこの順に積層させることによって形成されることを特徴とする請求項1に記載の太陽電池モジュール。
- 前記導電性基板は、パンチングメタルで形成されていることを特徴とする請求項1又は2に記載の太陽電池モジュール。
- 前記上部電極層の表面には、太陽電池セル同士を電気的に接続するための電気接続部が形成されており、前記貫通開口部は、単位面積当りの開口領域の割合が電気接続部から離れるにしたがって大きくなるように形成されていることを特徴とする請求項1から3のいずれかに記載の太陽電池モジュール。
- 複数の前記太陽電池セルは、その一部が積層方向に重なり合う重複連結部を形成して配列されており、その重複連結部では、前記電気接続部により導電性基板と上部電極層とが電気的に接続されることにより、複数の太陽電池セルが一体的に形成されていることを特徴とする請求項1〜4のいずれかに記載の太陽電池モジュール。
- 複数の前記太陽電池セルを収容するカバー部材を有しており、このカバー部材は透光性を有する可撓性材料で形成されており、このカバー部材により複数の太陽電池セルが前記重複連結部を形成した姿勢で一体的に固定されていることを特徴とする請求項1〜5のいずれかに記載の太陽電池モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010034482A JP5325139B2 (ja) | 2010-02-19 | 2010-02-19 | 太陽電池モジュール |
US13/504,015 US8796541B2 (en) | 2010-02-19 | 2011-02-08 | Solar cell module |
PCT/JP2011/052566 WO2011102256A1 (ja) | 2010-02-19 | 2011-02-08 | 太陽電池モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010034482A JP5325139B2 (ja) | 2010-02-19 | 2010-02-19 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011171542A true JP2011171542A (ja) | 2011-09-01 |
JP5325139B2 JP5325139B2 (ja) | 2013-10-23 |
Family
ID=44482843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010034482A Expired - Fee Related JP5325139B2 (ja) | 2010-02-19 | 2010-02-19 | 太陽電池モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US8796541B2 (ja) |
JP (1) | JP5325139B2 (ja) |
WO (1) | WO2011102256A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220073130A (ko) * | 2020-11-26 | 2022-06-03 | 한국생산기술연구원 | 타공형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
KR20220081808A (ko) * | 2020-12-09 | 2022-06-16 | 한국생산기술연구원 | 투광형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
WO2022186274A1 (ja) * | 2021-03-03 | 2022-09-09 | 株式会社カネカ | 結晶シリコン系太陽電池セル、太陽電池デバイスおよび太陽電池モジュール |
WO2024101216A1 (ja) * | 2022-11-10 | 2024-05-16 | 株式会社カネカ | 太陽電池セル及び太陽電池モジュール |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2997226B1 (fr) * | 2012-10-23 | 2016-01-01 | Crosslux | Procede de fabrication d’un dispositif photovoltaique a couches minces, notamment pour vitrage solaire |
FR2997227B1 (fr) * | 2012-10-23 | 2015-12-11 | Crosslux | Dispositif photovoltaique a couches minces, notamment pour vitrage solaire |
CN104425637A (zh) * | 2013-08-30 | 2015-03-18 | 中国建材国际工程集团有限公司 | 部分透明的薄层太阳能模块 |
US9590132B2 (en) | 2014-12-05 | 2017-03-07 | Solarcity Corporation | Systems and methods for cascading photovoltaic structures |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
FR3067521A1 (fr) * | 2017-06-08 | 2018-12-14 | Sunpartner Technologies | Module photovoltaique comportant une electrode avant semi-reflechissante a conductivite amelioree |
KR102470791B1 (ko) * | 2017-12-07 | 2022-11-28 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 패널 |
CN111223961A (zh) * | 2019-11-27 | 2020-06-02 | 浙江爱旭太阳能科技有限公司 | 一种新型太阳能电池串的生产方法 |
EP3840061A1 (en) * | 2019-12-19 | 2021-06-23 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Translucent photovoltaic device, translucent photovoltaic product and method of manufacturing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11261086A (ja) * | 1998-03-12 | 1999-09-24 | Sharp Corp | 光起電力装置及び太陽電池モジュール |
WO2003072500A1 (fr) * | 2002-02-26 | 2003-09-04 | Sharp Kabushiki Kaisha | Procede de fabrication de silicium en forme de plaque, substrat pour la fabrication de silicium en forme de plaque, silicium en forme de plaque, cellule solaire utilisant du silicium en forme de plaque et module de cellules solaires |
JP2005243675A (ja) * | 2004-02-24 | 2005-09-08 | Toppan Printing Co Ltd | 太陽電池モジュール、電子機器および非接触記録情報媒体 |
JP2009010355A (ja) * | 2007-05-29 | 2009-01-15 | Toray Eng Co Ltd | 太陽電池モジュール |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2911277B2 (ja) | 1991-11-28 | 1999-06-23 | 三洋電機株式会社 | アモルファスシリコン太陽電池の製造方法 |
US7732243B2 (en) * | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP2002299666A (ja) | 2001-03-29 | 2002-10-11 | Kanegafuchi Chem Ind Co Ltd | シースルー型薄膜太陽電池モジュール |
US20080264484A1 (en) * | 2007-02-16 | 2008-10-30 | Marina Temchenko | Backing sheet for photovoltaic modules and method for repairing same |
-
2010
- 2010-02-19 JP JP2010034482A patent/JP5325139B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-08 WO PCT/JP2011/052566 patent/WO2011102256A1/ja active Application Filing
- 2011-02-08 US US13/504,015 patent/US8796541B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11261086A (ja) * | 1998-03-12 | 1999-09-24 | Sharp Corp | 光起電力装置及び太陽電池モジュール |
WO2003072500A1 (fr) * | 2002-02-26 | 2003-09-04 | Sharp Kabushiki Kaisha | Procede de fabrication de silicium en forme de plaque, substrat pour la fabrication de silicium en forme de plaque, silicium en forme de plaque, cellule solaire utilisant du silicium en forme de plaque et module de cellules solaires |
JP2005243675A (ja) * | 2004-02-24 | 2005-09-08 | Toppan Printing Co Ltd | 太陽電池モジュール、電子機器および非接触記録情報媒体 |
JP2009010355A (ja) * | 2007-05-29 | 2009-01-15 | Toray Eng Co Ltd | 太陽電池モジュール |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220073130A (ko) * | 2020-11-26 | 2022-06-03 | 한국생산기술연구원 | 타공형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
KR102531362B1 (ko) * | 2020-11-26 | 2023-05-12 | 한국생산기술연구원 | 타공형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
KR20220081808A (ko) * | 2020-12-09 | 2022-06-16 | 한국생산기술연구원 | 투광형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
KR102465555B1 (ko) * | 2020-12-09 | 2022-11-11 | 한국생산기술연구원 | 투광형 실리콘 슁글드 태양광 모듈 구조 및 그 제조 방법 |
WO2022186274A1 (ja) * | 2021-03-03 | 2022-09-09 | 株式会社カネカ | 結晶シリコン系太陽電池セル、太陽電池デバイスおよび太陽電池モジュール |
WO2024101216A1 (ja) * | 2022-11-10 | 2024-05-16 | 株式会社カネカ | 太陽電池セル及び太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
WO2011102256A1 (ja) | 2011-08-25 |
US20120204933A1 (en) | 2012-08-16 |
JP5325139B2 (ja) | 2013-10-23 |
US8796541B2 (en) | 2014-08-05 |
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