JP5152407B2 - 太陽電池セルおよびその製造方法 - Google Patents
太陽電池セルおよびその製造方法 Download PDFInfo
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- JP5152407B2 JP5152407B2 JP2011511270A JP2011511270A JP5152407B2 JP 5152407 B2 JP5152407 B2 JP 5152407B2 JP 2011511270 A JP2011511270 A JP 2011511270A JP 2011511270 A JP2011511270 A JP 2011511270A JP 5152407 B2 JP5152407 B2 JP 5152407B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 50
- 229910052782 aluminium Inorganic materials 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 238000002161 passivation Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 14
- 229910018125 Al-Si Inorganic materials 0.000 description 13
- 229910018520 Al—Si Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011856 silicon-based particle Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
次に、図面を用いて、この発明の実施の形態を説明する。以下の図面の記載において、同一又は類似の部分には、同一又は類似の符号を付している。但し、図面は模式的なものであり、各寸法の比率等は現実のものとは異なることに留意すべきである。したがって、具体的な寸法等は以下の説明を参酌して判断すべきものである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることは勿論である。
図14は、この発明の実施の形態2における太陽電池セルの一部を裏面側から見た透視図(裏面側下層電極を表示)である。前記実施の形態1では、アルミニウム電極9がドット状である場合について説明したが、本発明に係る裏面パッシベーション構造の太陽電池セルでは、多結晶シリコンにおいて、開口部面積が小さくなると結晶粒界によりシリコンの反応が変わりコンタクト状態が安定しないので十分な特性が得られない可能性がある。
上記実施の形態1では、アルミニウム電極を形成した上に重ねてアルミニウム粒子とシリコン粒子とを含むAl−Siペーストを印刷し、第2の裏面電極であるAl−Si電極を形成していたが、アルミニウムとシリコンとを溶融したAl−Si合金を用い、当該合金を粒状にした粉体からなるペースト、または、当該粉体を含むペーストを用いてもよい。
Claims (6)
- 半導体基板と、該半導体基板の受光面側の主面上に形成された導電性を有する半導体層と、を有する太陽電池セルにおいて、前記半導体基板の裏面側の主面上にパッシベーション膜を形成し、該パッシベーション膜に少なくとも1つの開口部を設け、前記パッシベーション膜上で前記開口部が占める範囲の全ての部分と重複し、かつ、前記開口部を覆う第1の裏面電極と、前記パッシベーション膜上で前記第1の裏面電極が占める範囲の全ての部分と重複し、かつ、前記第1の裏面電極を覆う第2の裏面電極とを設けたことを特徴とする太陽電池セル。
- 前記半導体基板は受光面側の主面上に形成された表面凹凸部を備え、前記半導体層は前記表面凹凸部に沿って形成され、前記半導体層の受光面側に形成された反射防止膜を備える請求項1に記載の太陽電池セル。
- 前記第2の裏面電極は少なくともアルミニウムとシリコンを含む合金からなることを特徴とする請求項1または2に記載の太陽電池セル。
- 前記第2の裏面電極に含まれるアルミニウムとシリコンの組成比は、アルミニウム100重量部に対してシリコンが5〜20重量部であることを特徴とする請求項3記載の太陽電池セル。
- 前記開口部及び前記第1の裏面電極がストライプ状であることを特徴とする請求項1乃至請求項4のいずれか記載の太陽電池セル。
- 前記開口部に合わせて第1の裏面電極を印刷法により形成する工程と、前記第1の裏面電極を形成した上に重ねて第2の裏面電極を印刷法により形成する工程とを含むこと特徴とする請求項1記載の太陽電池セルの製造方法。
Priority Applications (1)
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JP2011511270A JP5152407B2 (ja) | 2009-04-29 | 2010-03-02 | 太陽電池セルおよびその製造方法 |
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JP2009110206 | 2009-04-29 | ||
JP2009110206 | 2009-04-29 | ||
PCT/JP2010/001394 WO2010125728A1 (ja) | 2009-04-29 | 2010-03-02 | 太陽電池セルおよびその製造方法 |
JP2011511270A JP5152407B2 (ja) | 2009-04-29 | 2010-03-02 | 太陽電池セルおよびその製造方法 |
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JPWO2010125728A1 JPWO2010125728A1 (ja) | 2012-10-25 |
JP5152407B2 true JP5152407B2 (ja) | 2013-02-27 |
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JP2011511270A Expired - Fee Related JP5152407B2 (ja) | 2009-04-29 | 2010-03-02 | 太陽電池セルおよびその製造方法 |
Country Status (5)
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US (1) | US20120037224A1 (ja) |
JP (1) | JP5152407B2 (ja) |
CN (1) | CN102414833B (ja) |
DE (1) | DE112010001822T8 (ja) |
WO (1) | WO2010125728A1 (ja) |
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CN103180964B (zh) * | 2010-10-05 | 2015-12-16 | 三菱电机株式会社 | 光电动势装置及其制造方法 |
US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
TWI470816B (zh) * | 2011-12-28 | 2015-01-21 | Au Optronics Corp | 太陽能電池 |
JP5924945B2 (ja) * | 2012-01-11 | 2016-05-25 | 東洋アルミニウム株式会社 | ペースト組成物 |
WO2013115076A1 (ja) * | 2012-02-02 | 2013-08-08 | 東洋アルミニウム株式会社 | ペースト組成物 |
TW201349255A (zh) * | 2012-02-24 | 2013-12-01 | Applied Nanotech Holdings Inc | 用於太陽能電池之金屬化糊劑 |
US20140158192A1 (en) * | 2012-12-06 | 2014-06-12 | Michael Cudzinovic | Seed layer for solar cell conductive contact |
KR20160034250A (ko) * | 2013-05-10 | 2016-03-29 | 에르체테 솔루션즈 게엠베하 | 태양 전지 및 그 제조 방법 |
KR20140135881A (ko) * | 2013-05-16 | 2014-11-27 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN104465798A (zh) * | 2013-09-24 | 2015-03-25 | 李岱殷 | 太阳能电池结构及其形成方法 |
CN103474486B (zh) * | 2013-09-25 | 2015-12-23 | 常州天合光能有限公司 | 晶体硅太阳电池的背面梁桥式接触电极及其制备方法 |
JP6502651B2 (ja) * | 2014-11-13 | 2019-04-17 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池モジュールの製造方法 |
TWI539613B (zh) * | 2015-07-16 | 2016-06-21 | 有成精密股份有限公司 | 高功率太陽能電池模組 |
NL2015844B1 (en) * | 2015-11-23 | 2017-06-07 | Stichting Energieonderzoek Centrum Nederland | Enhanced metallization of silicon solar cells. |
CN111969071B (zh) * | 2020-08-25 | 2022-03-15 | 常州时创能源股份有限公司 | 一种金属化方法和太阳能电池 |
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EP2149155B9 (en) * | 2007-05-07 | 2012-04-25 | Georgia Tech Research Corporation | Formation of high quality back contact with screen-printed local back surface field |
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2010
- 2010-03-02 DE DE112010001822T patent/DE112010001822T8/de not_active Withdrawn - After Issue
- 2010-03-02 WO PCT/JP2010/001394 patent/WO2010125728A1/ja active Application Filing
- 2010-03-02 CN CN201080018699.4A patent/CN102414833B/zh not_active Expired - Fee Related
- 2010-03-02 JP JP2011511270A patent/JP5152407B2/ja not_active Expired - Fee Related
- 2010-03-02 US US13/266,513 patent/US20120037224A1/en not_active Abandoned
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JP2002246625A (ja) * | 2001-02-21 | 2002-08-30 | Sharp Corp | 太陽電池の製造方法 |
JP2007214372A (ja) * | 2006-02-09 | 2007-08-23 | Sharp Corp | 太陽電池およびその製造方法 |
JP2008294209A (ja) * | 2007-05-24 | 2008-12-04 | Mitsubishi Electric Corp | 太陽電池基板の製造方法 |
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JPWO2010125728A1 (ja) | 2012-10-25 |
WO2010125728A1 (ja) | 2010-11-04 |
US20120037224A1 (en) | 2012-02-16 |
DE112010001822T5 (de) | 2012-06-14 |
CN102414833A (zh) | 2012-04-11 |
CN102414833B (zh) | 2014-07-09 |
DE112010001822T8 (de) | 2012-09-13 |
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