JP6216448B2 - フォトダイオード - Google Patents
フォトダイオード Download PDFInfo
- Publication number
- JP6216448B2 JP6216448B2 JP2016522162A JP2016522162A JP6216448B2 JP 6216448 B2 JP6216448 B2 JP 6216448B2 JP 2016522162 A JP2016522162 A JP 2016522162A JP 2016522162 A JP2016522162 A JP 2016522162A JP 6216448 B2 JP6216448 B2 JP 6216448B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type doping
- type
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 15
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
上記透明導電酸化物層214は、金属化合物導電膜層であり、好ましくは、酸化インジウムスズ(ITO、Indium Tin Oxide)導電膜層である。
102 第一型の基板
103 接触導体
106 分離領域
107 PN接合インターフェース
109 空乏領域
118 第二型のドーピングウェル
119 第二型のドーピング領域
120 接触層
212 間隔領域
213 不動態化層
214 透明導電酸化物層
215 ポリシリコン層
216 電極
Claims (9)
- 上表面を備える第一型の基板と、
前記第一型の基板内に形成され、前記第一型の基板に隣接する面領域がPN接合インターフェースである第二型のドーピングウェルと、
前記第二型のドーピングウェル内に形成され、且つ前記第二型のドーピングウェルの表面から延びる第二型のドーピング領域と、
前記第一型の基板内に形成され、且つ第二型のドーピングウェルに接触しない分離領域と、
前記第一型の基板の上表面に形成され、且つ前記第二型のドーピングウェル及び前記第二型のドーピング領域を覆う保護層と、
前記保護層を貫通して、接触層及び導電条を備え、前記接触層が当該導電条の一端に形成され、且つ前記第二型のドーピング領域に接触して接続される接触導体と、を備え、
前記保護層が透明導電酸化物層及びポリシリコン層を備え、前記透明導電酸化物層が前記ポリシリコン層の上に設置される、
ことを特徴とするフォトダイオード。 - 前記第一型の基板がP型の基板であることを特徴とする請求項1に記載のフォトダイオード。
- 前記第二型のドーピングウェルが相対的に低い濃度でドーピングされ、前記第二型のドーピング領域が相対的に高い濃度でドーピングされることを特徴とする請求項1に記載のフォトダイオード。
- 前記接触層が金属シリサイド層であることを特徴とする請求項1に記載のフォトダイオード。
- 前記分離領域が窒化珪素または二酸化珪素であることを特徴とする請求項1に記載のフォトダイオード。
- 前記分離領域が選択酸化層、浅溝槽分離層またはフィールド酸化層であることを特徴とする請求項1に記載のフォトダイオード。
- 前記ポリシリコン層の厚さが0.1μmであることを特徴とする請求項1に記載のフォトダイオード。
- 前記ポリシリコン層が前記第一型の基板に電気的に接続されることを特徴とする請求項1に記載のフォトダイオード。
- 前記接触導体が接触プラグであることを特徴とする請求項1に記載のフォトダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2013/078087 WO2014205706A1 (zh) | 2013-06-26 | 2013-06-26 | 光电二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016526791A JP2016526791A (ja) | 2016-09-05 |
JP6216448B2 true JP6216448B2 (ja) | 2017-10-18 |
Family
ID=52140809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016522162A Active JP6216448B2 (ja) | 2013-06-26 | 2013-06-26 | フォトダイオード |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6216448B2 (ja) |
WO (1) | WO2014205706A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116154022B (zh) * | 2023-03-14 | 2024-03-22 | 江南大学 | 一种双层SiO2隔离的光电二极管结构、阵列及制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4446292B2 (ja) * | 1996-11-01 | 2010-04-07 | ローレンス バークレイ ラボラトリー | 光子感知エレメント及びこれを用いたデバイス |
DE10024473B4 (de) * | 2000-05-18 | 2007-04-19 | Vishay Semiconductor Gmbh | Optischer Empfänger |
JP2005093549A (ja) * | 2003-09-12 | 2005-04-07 | Seiko Instruments Inc | 光電変換装置及びイメージセンサーic |
US20080217666A1 (en) * | 2007-03-07 | 2008-09-11 | United Microelectronics Corp. | Cmos image sensor and method of fabricating the same |
CN101286518B (zh) * | 2007-04-12 | 2011-03-16 | 上海宏力半导体制造有限公司 | 光电二极管装置 |
CN100561711C (zh) * | 2007-05-08 | 2009-11-18 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器的形成方法 |
US7652257B2 (en) * | 2007-06-15 | 2010-01-26 | General Electric Company | Structure of a solid state photomultiplier |
JP2009158569A (ja) * | 2007-12-25 | 2009-07-16 | Seiko Instruments Inc | 光検出半導体装置、光検出装置、及び画像表示装置 |
JP5215887B2 (ja) * | 2009-01-27 | 2013-06-19 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP5185207B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP2010278045A (ja) * | 2009-05-26 | 2010-12-09 | Panasonic Corp | 光半導体装置 |
JP5387212B2 (ja) * | 2009-07-31 | 2014-01-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN103325881B (zh) * | 2013-06-26 | 2014-12-03 | 林大伟 | 光电二极管 |
-
2013
- 2013-06-26 WO PCT/CN2013/078087 patent/WO2014205706A1/zh active Application Filing
- 2013-06-26 JP JP2016522162A patent/JP6216448B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2014205706A1 (zh) | 2014-12-31 |
JP2016526791A (ja) | 2016-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI683430B (zh) | 具有吸收增強半導體層的影像感測器 | |
TWI476906B (zh) | Photodiode and photodiode array | |
US9419159B2 (en) | Semiconductor light-detecting element | |
US7304338B2 (en) | Solid-state image sensor and method for fabricating the same | |
US20060128052A1 (en) | Solid-state imaging device and method of manufacturing the same | |
JP5829224B2 (ja) | Mosイメージセンサ | |
US20070007611A1 (en) | Image sensor and related fabrication method | |
JP6612139B2 (ja) | 半導体装置 | |
JP2009164604A (ja) | イメージセンサー及びその製造方法 | |
JP6305030B2 (ja) | 光電変換装置の製造方法 | |
US8212327B2 (en) | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme | |
US6043115A (en) | Method for avoiding interference in a CMOS sensor | |
US20020153478A1 (en) | Method of preventing cross talk | |
JP6216448B2 (ja) | フォトダイオード | |
JP2007317975A (ja) | 光半導体装置 | |
US9202829B2 (en) | Light sensors with infrared photocurrent suppression | |
CN203377243U (zh) | 光电二极管 | |
US8530994B2 (en) | Method for producing solid state imaging device and solid-state imaging device | |
JP2010034181A (ja) | Pinフォトダイオードおよびその製造方法 | |
JPS6286756A (ja) | 光電変換装置 | |
CN103325881B (zh) | 光电二极管 | |
TW201501280A (zh) | 光電二極體 | |
CN107425027B (zh) | 半导体装置以及半导体装置的制造方法 | |
US20150084152A1 (en) | Photodiode | |
JP2018207049A (ja) | 固体撮像素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160411 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161122 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161124 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170922 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6216448 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |