JP5808592B2 - 基準電圧決定方法及び推奨動作電圧決定方法 - Google Patents
基準電圧決定方法及び推奨動作電圧決定方法 Download PDFInfo
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- JP5808592B2 JP5808592B2 JP2011148308A JP2011148308A JP5808592B2 JP 5808592 B2 JP5808592 B2 JP 5808592B2 JP 2011148308 A JP2011148308 A JP 2011148308A JP 2011148308 A JP2011148308 A JP 2011148308A JP 5808592 B2 JP5808592 B2 JP 5808592B2
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- 238000000034 method Methods 0.000 title claims description 37
- 230000008859 change Effects 0.000 claims description 33
- 238000010791 quenching Methods 0.000 claims description 12
- 230000000171 quenching effect Effects 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims 2
- 238000005452 bending Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 8
- 101100171060 Caenorhabditis elegans div-1 gene Proteins 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000004069 differentiation Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- RFVFQQWKPSOBED-PSXMRANNSA-N 1-myristoyl-2-palmitoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)O[C@@H](COP([O-])(=O)OCC[N+](C)(C)C)COC(=O)CCCCCCCCCCCCC RFVFQQWKPSOBED-PSXMRANNSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 238000000691 measurement method Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Description
M=C×ΔV
Cは、各アバランシェフォトダイオードの接合容量である。ΔVは、最も多くのアバランシェフォトダイオードがガイガーモードに移行する逆バイアス電圧、すなわち基準電圧からの電位差である。したがって、推奨動作電圧と基準電圧との差が決まれば、増倍率Mが一意的に決まることとなる。逆に、所望の増倍率Mを得るためには、基準電圧に上記関係式を満たすΔVを加えればよい。
Claims (5)
- ガイガーモードで動作する複数のアバランシェフォトダイオードと、それぞれの前記アバランシェフォトダイオードに対して直列に接続されたクエンチング抵抗と、を備えているフォトダイオードアレイに印加する逆バイアス電圧の、推奨動作電圧を決定するための基準電圧を決定する基準電圧決定方法であって、
前記フォトダイオードアレイに印加する逆バイアス電圧を変化させて電流を測定し、測定した電流の変化における、前記複数のアバランシェフォトダイオードのうち最も多くのアバランシェフォトダイオードがガイガーモードに移行することにより生じる変曲点での逆バイアス電圧を前記基準電圧として決定することを特徴とする基準電圧決定方法。 - 測定した電流の一回微分がピークとなる逆バイアス電圧を前記基準電圧として決定することを特徴とする請求項1に記載の基準電圧決定方法。
- 測定した電流の二回微分がゼロとなる逆バイアス電圧を前記基準電圧として決定することを特徴とする請求項1に記載の基準電圧決定方法。
- ガイガーモードで動作する複数のアバランシェフォトダイオードと、それぞれの前記アバランシェフォトダイオードに対して直列に接続されたクエンチング抵抗と、を備えているフォトダイオードアレイに印加する逆バイアス電圧の、推奨動作電圧を決定する推奨動作電圧決定方法であって、
請求項1〜3のいずれか一項に記載の基準電圧決定方法にて決定された基準電圧に所定の値を加えて得た電圧を前記推奨動作電圧として決定することを特徴とする推奨動作電圧決定方法。 - ガイガーモードで動作する複数のアバランシェフォトダイオードと、それぞれの前記アバランシェフォトダイオードに対して直列に接続されたクエンチング抵抗と、を備えているフォトダイオードアレイに印加する逆バイアス電圧の、推奨動作電圧を決定する推奨動作電圧決定方法であって、
前記フォトダイオードアレイに印加する逆バイアス電圧を変化させて電流を測定し、測定した電流の変化において、下に凸から上に凸に変わる、前記複数のアバランシェフォトダイオードのうち最も多くのアバランシェフォトダイオードがガイガーモードに移行することにより生じる変曲点と逆バイアス電圧を増加に伴いアフターパルスが増加することにより生じる変曲点との間の曲線部分での逆バイアス電圧を推奨動作電圧として決定することを特徴とする推奨動作電圧決定方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2011148308A JP5808592B2 (ja) | 2011-07-04 | 2011-07-04 | 基準電圧決定方法及び推奨動作電圧決定方法 |
US13/247,192 US9153608B2 (en) | 2011-07-04 | 2011-09-28 | Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage |
KR1020147000525A KR101883528B1 (ko) | 2011-07-04 | 2011-12-05 | 포토 다이오드 어레이, 기준 전압 결정 방법, 및 권장 동작 전압 결정 방법 |
PCT/JP2011/078085 WO2013005353A1 (ja) | 2011-07-04 | 2011-12-05 | フォトダイオードアレイ、基準電圧決定方法、及び推奨動作電圧決定方法 |
EP11869094.0A EP2731148B1 (en) | 2011-07-04 | 2011-12-05 | Photodiode array, reference voltage determining method, and recommended operation voltage determining method |
CN201180072092.9A CN103650166B (zh) | 2011-07-04 | 2011-12-05 | 光电二极管阵列、基准电压决定方法及推荐动作电压决定方法 |
RU2014103622/28A RU2567089C2 (ru) | 2011-07-04 | 2011-12-05 | Матрица фотодиодов, способ определения опорного напряжения и способ определения рекомендуемого рабочего напряжения |
TW101100506A TWI525850B (zh) | 2011-07-04 | 2012-01-05 | 光電二極體陣列、基準電壓決定方法及推薦動作電壓決定方法 |
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JP2011148308A JP5808592B2 (ja) | 2011-07-04 | 2011-07-04 | 基準電圧決定方法及び推奨動作電圧決定方法 |
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JP2013016637A JP2013016637A (ja) | 2013-01-24 |
JP5808592B2 true JP5808592B2 (ja) | 2015-11-10 |
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Country Status (8)
Country | Link |
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US (1) | US9153608B2 (ja) |
EP (1) | EP2731148B1 (ja) |
JP (1) | JP5808592B2 (ja) |
KR (1) | KR101883528B1 (ja) |
CN (1) | CN103650166B (ja) |
RU (1) | RU2567089C2 (ja) |
TW (1) | TWI525850B (ja) |
WO (1) | WO2013005353A1 (ja) |
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JP6162595B2 (ja) * | 2013-12-19 | 2017-07-12 | 浜松ホトニクス株式会社 | 光検出器 |
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JP2018078304A (ja) * | 2017-12-07 | 2018-05-17 | 株式会社東芝 | 光検出器 |
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- 2011-09-28 US US13/247,192 patent/US9153608B2/en active Active
- 2011-12-05 RU RU2014103622/28A patent/RU2567089C2/ru active
- 2011-12-05 CN CN201180072092.9A patent/CN103650166B/zh active Active
- 2011-12-05 WO PCT/JP2011/078085 patent/WO2013005353A1/ja active Application Filing
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Publication number | Publication date |
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WO2013005353A1 (ja) | 2013-01-10 |
RU2014103622A (ru) | 2015-08-10 |
KR101883528B1 (ko) | 2018-07-30 |
CN103650166A (zh) | 2014-03-19 |
JP2013016637A (ja) | 2013-01-24 |
US20130009266A1 (en) | 2013-01-10 |
EP2731148B1 (en) | 2016-06-22 |
CN103650166B (zh) | 2016-02-10 |
EP2731148A4 (en) | 2015-03-18 |
TWI525850B (zh) | 2016-03-11 |
EP2731148A1 (en) | 2014-05-14 |
RU2567089C2 (ru) | 2015-10-27 |
KR20140037917A (ko) | 2014-03-27 |
TW201304180A (zh) | 2013-01-16 |
US9153608B2 (en) | 2015-10-06 |
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