IT1393781B1 - Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione - Google Patents

Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione

Info

Publication number
IT1393781B1
IT1393781B1 ITTO2009A000322A ITTO20090322A IT1393781B1 IT 1393781 B1 IT1393781 B1 IT 1393781B1 IT TO2009A000322 A ITTO2009A000322 A IT TO2009A000322A IT TO20090322 A ITTO20090322 A IT TO20090322A IT 1393781 B1 IT1393781 B1 IT 1393781B1
Authority
IT
Italy
Prior art keywords
photodium
photodiodo
controllable
integrated
ring
Prior art date
Application number
ITTO2009A000322A
Other languages
English (en)
Inventor
Delfo Nunziato Sanfilippo
Piero Giorgio Fallica
Massimo Cataldo Mazzillo
Original Assignee
St Microelectronics Rousset
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Rousset filed Critical St Microelectronics Rousset
Priority to ITTO2009A000322A priority Critical patent/IT1393781B1/it
Priority to US12/764,888 priority patent/US8476730B2/en
Publication of ITTO20090322A1 publication Critical patent/ITTO20090322A1/it
Application granted granted Critical
Publication of IT1393781B1 publication Critical patent/IT1393781B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
ITTO2009A000322A 2009-04-23 2009-04-23 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione IT1393781B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2009A000322A IT1393781B1 (it) 2009-04-23 2009-04-23 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US12/764,888 US8476730B2 (en) 2009-04-23 2010-04-21 Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2009A000322A IT1393781B1 (it) 2009-04-23 2009-04-23 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione

Publications (2)

Publication Number Publication Date
ITTO20090322A1 ITTO20090322A1 (it) 2010-10-24
IT1393781B1 true IT1393781B1 (it) 2012-05-08

Family

ID=41226669

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2009A000322A IT1393781B1 (it) 2009-04-23 2009-04-23 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione

Country Status (2)

Country Link
US (1) US8476730B2 (it)
IT (1) IT1393781B1 (it)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1399075B1 (it) * 2010-03-23 2013-04-05 St Microelectronics Srl Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
IT1402264B1 (it) 2010-09-16 2013-08-28 St Microelectronics Srl Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode
GB2485400B (en) * 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
TWI458111B (zh) * 2011-07-26 2014-10-21 Univ Nat Central 水平式累崩型光檢測器結構
KR101768704B1 (ko) 2011-09-02 2017-08-17 한국전자통신연구원 포토멀티플라이어 및 그의 제조방법
US9728667B1 (en) * 2011-10-21 2017-08-08 Radiation Monitoring Devices, Inc. Solid state photomultiplier using buried P-N junction
DE102012103699A1 (de) * 2012-02-15 2013-08-22 First Sensor AG Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor
ITTO20120501A1 (it) * 2012-06-08 2013-12-09 St Microelectronics Srl Dispositivo diagnostico con fotorilevatore integrato e sistema diagnostico includente il medesimo
DE102013018789A1 (de) 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
US20140159180A1 (en) * 2012-12-06 2014-06-12 Agency For Science, Technology And Research Semiconductor resistor structure and semiconductor photomultiplier device
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US10964837B2 (en) 2013-03-15 2021-03-30 ActLight SA Photo detector systems and methods of operating same
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US8860083B1 (en) * 2013-05-13 2014-10-14 Sensors Unlimited, Inc. Low noise hybridized detector using charge transfer
KR102138385B1 (ko) * 2014-03-06 2020-07-28 매그나칩 반도체 유한회사 저 비용의 반도체 소자 제조방법
IL238339B (en) 2014-08-04 2020-05-31 Sensors Unlimited Inc A low-noise hybridization detector based on charge transfer
JP2016092178A (ja) * 2014-11-04 2016-05-23 株式会社リコー 固体撮像素子
CN104576809B (zh) * 2015-01-06 2016-08-17 中国电子科技集团公司第四十四研究所 905nm硅雪崩光电二极管及其制作方法
DE112016005522T5 (de) 2015-12-03 2018-08-30 Sony Semiconductor Solutions Corporation Halbleiter-Bildgebungselement und Bildgebungsvorrichtung
JP6650261B2 (ja) 2015-12-21 2020-02-19 浜松ホトニクス株式会社 光電変換素子
EP3206234B1 (en) * 2016-02-09 2023-08-09 ams AG Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element
ITUA20164571A1 (it) * 2016-06-21 2017-12-21 St Microelectronics Srl Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione
US10141458B2 (en) * 2016-07-21 2018-11-27 Omnivision Technologies, Inc. Vertical gate guard ring for single photon avalanche diode pitch minimization
JP6701135B2 (ja) * 2016-10-13 2020-05-27 キヤノン株式会社 光検出装置および光検出システム
GB2557303B (en) * 2016-12-05 2020-08-12 X Fab Semiconductor Foundries Gmbh Photodiode device and method of manufacture
CN106531837B (zh) * 2016-12-29 2017-10-17 杭州电子科技大学 双结单光子雪崩二极管及其制作方法
FR3068174A1 (fr) * 2017-06-21 2018-12-28 Stmicroelectronics (Crolles 2) Sas Procede de fabrication d'une cellule spad
EP3477710B1 (en) 2017-10-26 2023-03-29 STMicroelectronics (Research & Development) Limited Avalanche photodiode and method of manufacturing the avalanche photodiode
KR20230170996A (ko) * 2017-11-15 2023-12-19 소니 세미컨덕터 솔루션즈 가부시키가이샤 광검출 소자 및 그 제조 방법
JP7114244B2 (ja) * 2017-11-30 2022-08-08 キヤノン株式会社 光検出装置、光検出システム、及び移動体
JP2019102675A (ja) * 2017-12-05 2019-06-24 ソニーセミコンダクタソリューションズ株式会社 フォトダイオード、画素回路、電子機器、および、フォトダイオードの製造方法
JP7169071B2 (ja) 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP2019165181A (ja) * 2018-03-20 2019-09-26 株式会社東芝 光検出装置
IT201800004149A1 (it) * 2018-03-30 2019-09-30 St Microelectronics Srl Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
JP7182978B2 (ja) * 2018-09-28 2022-12-05 キヤノン株式会社 光検出装置、光検出システム
EP4020019B1 (en) * 2018-10-19 2024-05-08 Avago Technologies International Sales Pte. Limited Radiation detector, method for producing a radiation detector and method for operating a radiation detector
EP3654376A1 (en) * 2018-11-19 2020-05-20 Université de Genève Multi-junction pico-avalanche detector
US11251217B2 (en) 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
US11349042B2 (en) 2019-12-18 2022-05-31 Stmicroelectronics (Research & Development) Limited Anode sensing circuit for single photon avalanche diodes
WO2021140177A1 (en) * 2020-01-09 2021-07-15 Osram Opto Semiconductors Gmbh Improvements in light detection with semiconductor photodiodes
KR20220114741A (ko) 2021-02-09 2022-08-17 에스케이하이닉스 주식회사 단일 광자 애벌런치 다이오드
KR20220121394A (ko) * 2021-02-25 2022-09-01 주식회사 디비하이텍 Spad 픽셀 구조 및 제조방법
WO2022179171A1 (zh) * 2021-02-26 2022-09-01 神盾股份有限公司 单光子雪崩二极管及单光子雪崩二极管阵列
CN114400269A (zh) * 2021-05-19 2022-04-26 神盾股份有限公司 单光子雪崩二极管
JP2024031352A (ja) * 2022-08-26 2024-03-07 株式会社東芝 光検出器、光検出システム、ライダー装置及び移動体

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313127A (en) * 1980-03-06 1982-01-26 Hughes Aircraft Company Signal detection method for IR detector having charge readout structure
JP3029497B2 (ja) 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5360987A (en) 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
RU2102821C1 (ru) 1996-10-10 1998-01-20 Зираддин Ягуб-оглы Садыгов Лавинный фотодиод
US6118142A (en) 1998-11-09 2000-09-12 United Microelectronics Corp. CMOS sensor
US6359293B1 (en) 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
IT1317199B1 (it) 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
JP3628936B2 (ja) 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP3910817B2 (ja) 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US6541836B2 (en) * 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
JP4227069B2 (ja) * 2004-05-07 2009-02-18 ローム株式会社 光電変換デバイス、イメージセンサおよび光電変換デバイスの製造方法
DE102004022948B4 (de) * 2004-05-10 2006-06-01 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Strahlungsdetektor
GB0417749D0 (en) 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
US7781826B2 (en) 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
US7791161B2 (en) 2005-08-25 2010-09-07 Freescale Semiconductor, Inc. Semiconductor devices employing poly-filled trenches
US7547925B2 (en) * 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices
JP5157201B2 (ja) 2006-03-22 2013-03-06 株式会社デンソー 半導体装置
KR100819711B1 (ko) 2006-12-27 2008-04-04 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조 방법
US9087755B2 (en) 2007-04-24 2015-07-21 Koninklijke Philips N.V. Photodiodes and fabrication thereof
US7652257B2 (en) 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
JP2009033043A (ja) 2007-07-30 2009-02-12 Panasonic Corp 光半導体装置
DE102007037020B3 (de) 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
JP4599379B2 (ja) 2007-08-31 2010-12-15 株式会社東芝 トレンチゲート型半導体装置
JP2009065162A (ja) 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione

Also Published As

Publication number Publication date
US8476730B2 (en) 2013-07-02
ITTO20090322A1 (it) 2010-10-24
US20100271108A1 (en) 2010-10-28

Similar Documents

Publication Publication Date Title
IT1393781B1 (it) Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1392366B1 (it) Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
BR112012004160A2 (pt) Biocontrole de fusarium e micotoxinas de fusarium
BRPI1012533A2 (pt) composto de piradazinona e uso do mesmo
EP2512313A4 (en) PERSONAL CARE COMPOSITION FOR IMPROVING VELVETY AND SOFTNESS AND ARTICLES USING THE SAME
BRPI1005292A2 (pt) composição de decapagem e uso da composição
EP2307983A4 (en) INFORMATION PROCESSING WITH INTEGRATED SEMANTIC CONTEXTS
BR112012002349A2 (pt) composto,e, uso do mesmo
GB2474364B (en) Hairbrush, methods of use, and methods of manufacturing the same
BR112012003148A2 (pt) composição de remoção de oxigênio, artigo,e, uso da composição de remoção de oxigênio
FI20095084A0 (fi) Komposiitti ja sen käyttö
BR112012003152A2 (pt) composição removedora de oxigênio, artigo,e, uso de composição removedora de oxigênio.
BRPI1016076A2 (pt) composições antiodor e método de uso para neutralizar o mau cheiro do suor.
FI20095529A (fi) Probioottien uusi käyttö
ITTO20110816A1 (it) Estratto di fiori di dendrobium chrysotoxum e suo utilizzo cosmetico come antinvecchiamento.
BRPI0910212A2 (pt) partículas compósitas e composição cosmética.
ZA201303829B (en) 2-piperazin-1-yl-4h-1,3-benzothiazin-4-one derivatives and their use for the treatment of mammalian infections
CL2008001985A1 (es) Uso de compuestos derivados de benzoxazol, benzimidazol y benzotiazol en la prevencion, tratamiento o inhibicion de una afeccion inflamatoria de la piel o afeccion asociada con la disminucion de colageno.
BR112013014189A2 (pt) composição farmacêutica que compreende transcinamaldeíco e o uso da mesma no tratamento de infecções
BRPI1005804A2 (pt) unidade redutora de material, uso de unidade redutora de material, e fixador de conteúdo de material reduzido
CA135582S (en) Epilator
BRPI0818121A2 (pt) diespiro 1,2,4-trioxolano e seus métodos de fabricação e utilização
BRPI1008147A2 (pt) composição de xampu concentrado e xampu centrado
HK1142122A1 (en) Drying and/or processing of materials
BR112012002311A2 (pt) composto, composição farmacêutica, e, uso do composto.