IT1317199B1 - Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali - Google Patents
Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocaliInfo
- Publication number
- IT1317199B1 IT1317199B1 IT2000MI000765A ITMI20000765A IT1317199B1 IT 1317199 B1 IT1317199 B1 IT 1317199B1 IT 2000MI000765 A IT2000MI000765 A IT 2000MI000765A IT MI20000765 A ITMI20000765 A IT MI20000765A IT 1317199 B1 IT1317199 B1 IT 1317199B1
- Authority
- IT
- Italy
- Prior art keywords
- diaphragm
- ultrasensitive
- micrometric
- photo
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Microscoopes, Condenser (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2000MI000765A IT1317199B1 (it) | 2000-04-10 | 2000-04-10 | Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali |
PCT/EP2001/004008 WO2001078153A2 (en) | 2000-04-10 | 2001-04-09 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes |
US10/257,071 US6995444B2 (en) | 2000-04-10 | 2001-04-09 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes |
DE60127246T DE60127246T2 (de) | 2000-04-10 | 2001-04-09 | Ultraempfindlicher photodetektor mit integriertem pinhole für konfokale mikroskope und verfahren zur detektion optisches signal |
AT01927893T ATE357060T1 (de) | 2000-04-10 | 2001-04-09 | Ultraempfindlicher photodetektor mit integriertem pinhole für konfokale mikroskope und verfahren zur detektion optisches signal |
EP01927893A EP1273047B1 (en) | 2000-04-10 | 2001-04-09 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes and method to detect optical signal |
JP2001574908A JP5106734B2 (ja) | 2000-04-10 | 2001-04-09 | 共焦点顕微鏡のための統合ピンホールを有する超高感度光検出器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2000MI000765A IT1317199B1 (it) | 2000-04-10 | 2000-04-10 | Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI20000765A0 ITMI20000765A0 (it) | 2000-04-10 |
ITMI20000765A1 ITMI20000765A1 (it) | 2001-10-10 |
IT1317199B1 true IT1317199B1 (it) | 2003-05-27 |
Family
ID=11444799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2000MI000765A IT1317199B1 (it) | 2000-04-10 | 2000-04-10 | Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali |
Country Status (7)
Country | Link |
---|---|
US (1) | US6995444B2 (it) |
EP (1) | EP1273047B1 (it) |
JP (1) | JP5106734B2 (it) |
AT (1) | ATE357060T1 (it) |
DE (1) | DE60127246T2 (it) |
IT (1) | IT1317199B1 (it) |
WO (1) | WO2001078153A2 (it) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IES20010616A2 (en) * | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
US6781133B2 (en) * | 2001-11-01 | 2004-08-24 | Radiation Monitoring Devices, Inc. | Position sensitive solid state detector with internal gain |
JP3900992B2 (ja) | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
US7288825B2 (en) * | 2002-12-18 | 2007-10-30 | Noble Peak Vision Corp. | Low-noise semiconductor photodetectors |
US7341921B2 (en) * | 2003-05-14 | 2008-03-11 | University College Cork - National University Of Ireland, Cork | Photodiode |
KR100853067B1 (ko) * | 2004-04-05 | 2008-08-19 | 닛본 덴끼 가부시끼가이샤 | 포토 다이오드와 그 제조 방법 |
RU2290721C2 (ru) * | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
EP1780796A1 (de) * | 2005-10-26 | 2007-05-02 | Deutsche Thomson-Brandt Gmbh | Verfahren zur Erfassung von Daten mit einem Bildsensor |
JP4931475B2 (ja) * | 2006-05-11 | 2012-05-16 | 株式会社神戸製鋼所 | 紫外線検出素子及び検出方法 |
US20070290142A1 (en) * | 2006-06-16 | 2007-12-20 | General Electeric Company | X-ray detectors with adjustable active area electrode assembly |
GB2446429A (en) * | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
US8259293B2 (en) * | 2007-03-15 | 2012-09-04 | Johns Hopkins University | Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system |
SE531025C2 (sv) * | 2007-04-02 | 2008-11-25 | Bo Cederwall | System och metod för fotondetektion och för mätning av fotonflöden |
TWI455326B (zh) * | 2007-09-13 | 2014-10-01 | Omnivision Tech Inc | 透射式偵測器、使用該偵測器之系統及其方法 |
US20090146179A1 (en) * | 2007-12-11 | 2009-06-11 | Young-Kai Chen | Planar arrays of photodiodes |
ITTO20080045A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
JP2009231786A (ja) * | 2008-03-21 | 2009-10-08 | E2V Technologies (Uk) Ltd | センサ装置 |
IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
IT1393781B1 (it) * | 2009-04-23 | 2012-05-08 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
KR101148335B1 (ko) * | 2009-07-23 | 2012-05-21 | 삼성전기주식회사 | 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀 |
KR101084940B1 (ko) * | 2009-09-28 | 2011-11-17 | 삼성전기주식회사 | 실리콘 광전자 증배관 |
IT1399690B1 (it) | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
CN102024863B (zh) * | 2010-10-11 | 2013-03-27 | 湘潭大学 | 高速增强型紫外硅选择性雪崩光电二极管及其制作方法 |
DE102010055882A1 (de) * | 2010-12-22 | 2012-06-28 | Carl Zeiss Microlmaging Gmbh | Pinhole für ein konfokales Laser-Scanning Mikroskop |
JP2012248655A (ja) * | 2011-05-27 | 2012-12-13 | Mitsubishi Electric Corp | アバランシェフォトダイオード及びアバランシェフォトダイオードアレイ |
IN2014CN01055A (it) | 2011-08-30 | 2015-04-10 | Koninkl Philips Nv | |
KR20140019984A (ko) * | 2012-08-07 | 2014-02-18 | 한국전자통신연구원 | 가드링 구조를 갖는 아발란치 포토다이오드 및 그 제조 방법 |
GB201311055D0 (en) | 2013-06-21 | 2013-08-07 | St Microelectronics Res & Dev | Single-photon avalanche diode and an array thereof |
JP5661877B2 (ja) * | 2013-07-31 | 2015-01-28 | イー2ヴイ テクノロジーズ (ユーケイ) リミテッド | センサ装置 |
LU92665B1 (de) * | 2015-02-24 | 2016-08-25 | Leica Microsystems | Verfahren zur verbesserung des dynamikbereichs einer vorrichtung zum detektieren von licht |
DE102016206330B3 (de) * | 2016-04-14 | 2017-06-29 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Bildelement |
DE102016119730A1 (de) * | 2016-10-17 | 2018-04-19 | Carl Zeiss Microscopy Gmbh | Optikgruppe für Detektionslicht für ein Mikroskop, Verfahren zur Mikroskopie und Mikroskop |
JP6712215B2 (ja) * | 2016-11-11 | 2020-06-17 | 浜松ホトニクス株式会社 | 光検出装置 |
GB2576491A (en) * | 2018-07-17 | 2020-02-26 | Cambridge Entpr Ltd | A photodetector |
US12015036B2 (en) * | 2020-04-28 | 2024-06-18 | Lawrence Livermore National Security, Llc | High temporal resolution solid-state X-ray detection system |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
US4127932A (en) | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
JPH05103180A (ja) * | 1991-10-03 | 1993-04-23 | Minolta Camera Co Ltd | フアクシミリ装置 |
JP3029497B2 (ja) * | 1991-12-20 | 2000-04-04 | ローム株式会社 | フォトダイオードアレイおよびその製造法 |
JPH07114293B2 (ja) * | 1992-02-20 | 1995-12-06 | 浜松ホトニクス株式会社 | 半導体光入射位置検出素子 |
DE59300087D1 (de) * | 1992-07-16 | 1995-03-30 | Landis & Gry Tech Innovat Ag | Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker. |
JP3364989B2 (ja) | 1993-06-15 | 2003-01-08 | 株式会社ニコン | 分割光センサ−用アバランシェフォトダイオ−ド |
US5360987A (en) * | 1993-11-17 | 1994-11-01 | At&T Bell Laboratories | Semiconductor photodiode device with isolation region |
JPH07221341A (ja) * | 1993-12-08 | 1995-08-18 | Nikon Corp | 紫外線検出用シリコンアバランシェフォトダイオード |
JPH10233525A (ja) | 1997-02-19 | 1998-09-02 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
US5831322A (en) | 1997-06-25 | 1998-11-03 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
-
2000
- 2000-04-10 IT IT2000MI000765A patent/IT1317199B1/it active
-
2001
- 2001-04-09 AT AT01927893T patent/ATE357060T1/de not_active IP Right Cessation
- 2001-04-09 WO PCT/EP2001/004008 patent/WO2001078153A2/en active IP Right Grant
- 2001-04-09 JP JP2001574908A patent/JP5106734B2/ja not_active Expired - Fee Related
- 2001-04-09 US US10/257,071 patent/US6995444B2/en not_active Expired - Fee Related
- 2001-04-09 EP EP01927893A patent/EP1273047B1/en not_active Expired - Lifetime
- 2001-04-09 DE DE60127246T patent/DE60127246T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2001078153A3 (en) | 2002-04-04 |
ITMI20000765A1 (it) | 2001-10-10 |
DE60127246T2 (de) | 2008-02-28 |
JP5106734B2 (ja) | 2012-12-26 |
WO2001078153A2 (en) | 2001-10-18 |
JP2003530701A (ja) | 2003-10-14 |
ITMI20000765A0 (it) | 2000-04-10 |
US20030160250A1 (en) | 2003-08-28 |
ATE357060T1 (de) | 2007-04-15 |
US6995444B2 (en) | 2006-02-07 |
DE60127246D1 (de) | 2007-04-26 |
EP1273047A2 (en) | 2003-01-08 |
EP1273047B1 (en) | 2007-03-14 |
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