IT1392366B1 - Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione - Google Patents

Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione

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Publication number
IT1392366B1
IT1392366B1 ITTO2008A000945A ITTO20080945A IT1392366B1 IT 1392366 B1 IT1392366 B1 IT 1392366B1 IT TO2008A000945 A ITTO2008A000945 A IT TO2008A000945A IT TO20080945 A ITTO20080945 A IT TO20080945A IT 1392366 B1 IT1392366 B1 IT 1392366B1
Authority
IT
Italy
Prior art keywords
photodium
photodiodo
integrated
ring
operating
Prior art date
Application number
ITTO2008A000945A
Other languages
English (en)
Inventor
Delfo Nunziato Sanfilippo
Massimo Cataldo Mazzillo
Original Assignee
St Microelectronics Rousset
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Rousset filed Critical St Microelectronics Rousset
Priority to ITTO2008A000945A priority Critical patent/IT1392366B1/it
Priority to US12/637,628 priority patent/US8766164B2/en
Publication of ITTO20080945A1 publication Critical patent/ITTO20080945A1/it
Application granted granted Critical
Publication of IT1392366B1 publication Critical patent/IT1392366B1/it

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
ITTO2008A000945A 2008-12-17 2008-12-17 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione IT1392366B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2008A000945A IT1392366B1 (it) 2008-12-17 2008-12-17 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
US12/637,628 US8766164B2 (en) 2008-12-17 2009-12-14 Geiger-mode photodiode with integrated and adjustable quenching resistor and surrounding biasing conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2008A000945A IT1392366B1 (it) 2008-12-17 2008-12-17 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione

Publications (2)

Publication Number Publication Date
ITTO20080945A1 ITTO20080945A1 (it) 2010-06-18
IT1392366B1 true IT1392366B1 (it) 2012-02-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2008A000945A IT1392366B1 (it) 2008-12-17 2008-12-17 Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione

Country Status (2)

Country Link
US (1) US8766164B2 (it)
IT (1) IT1392366B1 (it)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20080045A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
KR101098165B1 (ko) * 2010-01-29 2011-12-22 센스기술 주식회사 전 파장 대의 양자효율이 우수한 수직구조의 실리콘 광전자 증배관
IT1399075B1 (it) * 2010-03-23 2013-04-05 St Microelectronics Srl Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione
US8860166B2 (en) * 2010-03-23 2014-10-14 Stmicroelectronics S.R.L. Photo detector array of geiger mode avalanche photodiodes for computed tomography systems
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
IT1402264B1 (it) * 2010-09-16 2013-08-28 St Microelectronics Srl Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode
JP5562207B2 (ja) 2010-10-29 2014-07-30 浜松ホトニクス株式会社 フォトダイオードアレイ
DE102010043822B4 (de) * 2010-11-12 2014-02-13 Namlab Ggmbh Fotodiode und Fotodiodenfeld sowie Verfahren zu deren Betrieb
FR2969821A1 (fr) * 2010-12-23 2012-06-29 St Microelectronics Sa Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
EP2549536B1 (de) * 2011-07-22 2020-08-19 Espros Photonics AG Halbleiterstruktur zur Photonendetektion
KR101768704B1 (ko) 2011-09-02 2017-08-17 한국전자통신연구원 포토멀티플라이어 및 그의 제조방법
CN103094103B (zh) * 2011-11-08 2015-08-26 无锡华润上华科技有限公司 三极管的制备方法以及使用该方法制备的三极管
DE102011056369A1 (de) * 2011-12-13 2013-06-13 Pmdtechnologies Gmbh Halbleiterbauelement mit trench gate
JP5739826B2 (ja) * 2012-01-23 2015-06-24 株式会社東芝 半導体装置
DE102012103699A1 (de) * 2012-02-15 2013-08-22 First Sensor AG Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor
US9012860B2 (en) * 2012-05-15 2015-04-21 Princeton Lightwave, Inc. Dual-SPAD-based single-photon receiver
US20140000099A1 (en) * 2012-06-29 2014-01-02 Noah Austin Spivak Methods for building resistive elements into printed circuit boards
EP2747154B1 (en) 2012-12-21 2020-04-01 ams AG Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
CN103208555A (zh) * 2012-12-24 2013-07-17 西南技术物理研究所 紫外选择性硅雪崩光电探测芯片
US10069023B2 (en) * 2013-01-18 2018-09-04 Texas Instruments Incorporated Optical sensor with integrated pinhole
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
EP2779255B1 (en) 2013-03-15 2023-08-23 ams AG Lateral single-photon avalanche diode and their manufacturing method
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP2015084392A (ja) * 2013-10-25 2015-04-30 浜松ホトニクス株式会社 光検出器
JP6296535B2 (ja) * 2013-12-09 2018-03-20 ローム株式会社 ダイオードおよびそれを含む信号出力回路
US9324759B2 (en) * 2013-12-19 2016-04-26 Omnivision Technologies, Inc. Image sensor pixel for high dynamic range image sensor
FR3019378A1 (fr) * 2014-03-25 2015-10-02 St Microelectronics Crolles 2 Structure d'isolement entre des photodiodes
JP6398409B2 (ja) * 2014-07-16 2018-10-03 三菱電機株式会社 受光素子
KR101638549B1 (ko) * 2014-11-05 2016-07-11 성균관대학교산학협력단 확산 방지층을 이용한 실리콘 광증배 소자 및 그 제조 방법
US9819144B2 (en) 2015-05-14 2017-11-14 Apple Inc. High-efficiency vertical emitters with improved heat sinking
US10034375B2 (en) 2015-05-21 2018-07-24 Apple Inc. Circuit substrate with embedded heat sink
US9735539B2 (en) 2015-07-20 2017-08-15 Apple Inc. VCSEL structure with embedded heat sink
JP2017037871A (ja) * 2015-08-06 2017-02-16 住友電気工業株式会社 受光装置、受光装置を作製する方法
US10620300B2 (en) 2015-08-20 2020-04-14 Apple Inc. SPAD array with gated histogram construction
US10324171B2 (en) 2015-12-20 2019-06-18 Apple Inc. Light detection and ranging sensor
US9997551B2 (en) 2015-12-20 2018-06-12 Apple Inc. Spad array with pixel-level bias control
JP6650261B2 (ja) * 2015-12-21 2020-02-19 浜松ホトニクス株式会社 光電変換素子
JP6734644B2 (ja) * 2015-12-21 2020-08-05 浜松ホトニクス株式会社 光電変換装置
EP3396723A4 (en) * 2015-12-21 2019-08-07 Hamamatsu Photonics K.K. PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE
KR101763865B1 (ko) 2015-12-29 2017-08-01 한국과학기술원 실리콘 광증배 소자
US9769398B2 (en) * 2016-01-06 2017-09-19 Microsoft Technology Licensing, Llc Image sensor with large-area global shutter contact
US10825939B2 (en) 2016-01-07 2020-11-03 The Research Foundation For The State University Of New York Selenium photomultiplier and method for fabrication thereof
US9671284B1 (en) 2016-01-14 2017-06-06 Kiskeya Microsystems Llc Single-photon avalanche diode circuit with variable hold-off time and dual delay regime
EP3206234B1 (en) * 2016-02-09 2023-08-09 ams AG Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element
JP6540547B2 (ja) * 2016-03-01 2019-07-10 豊田合成株式会社 Ｍｐｓダイオード
WO2017219223A1 (en) * 2016-06-21 2017-12-28 Shenzhen Genorivision Technology Co. Ltd. An image sensor with large dynamic range
ITUA20164571A1 (it) 2016-06-21 2017-12-21 St Microelectronics Srl Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione
WO2018000357A1 (en) * 2016-06-30 2018-01-04 Texas Instruments Incorporated Power mosfet with metal filled deep sinker contact for csp
US10141458B2 (en) * 2016-07-21 2018-11-27 Omnivision Technologies, Inc. Vertical gate guard ring for single photon avalanche diode pitch minimization
IT201600079027A1 (it) 2016-07-27 2018-01-27 St Microelectronics Srl Schiera di fotodiodi a valanga operanti in modalita' geiger per la rilevazione di radiazione infrarossa
JP2018019040A (ja) * 2016-07-29 2018-02-01 キヤノン株式会社 光検出装置および光検出システム
US10497818B2 (en) 2016-07-29 2019-12-03 Canon Kabushiki Kaisha Photodetection device and photodetection system
JP7013120B2 (ja) * 2016-07-29 2022-01-31 キヤノン株式会社 光検出装置および光検出システム
CN106129169A (zh) * 2016-08-12 2016-11-16 武汉京邦科技有限公司 一种半导体光电倍增器件
DE102017202754B4 (de) 2016-10-14 2022-08-04 Infineon Technologies Ag Optische Sensoreinrichtung und Verfahren zur Ansteuerung der optischen Sensoreinrichtung
JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
EP3387676A1 (en) * 2016-10-18 2018-10-17 Sony Semiconductor Solutions Corporation Photodetector
JP6921508B2 (ja) * 2016-11-29 2021-08-18 キヤノン株式会社 光検出装置および光検出システム
CN106711274B (zh) * 2016-11-30 2017-12-08 武汉光迅科技股份有限公司 一种雪崩光电二极管及其制造方法
EP3339886B1 (de) * 2016-12-22 2019-02-13 Sick AG Lichtempfänger mit einer vielzahl von lawinenphotodiodenelementen und verfahren zur versorgung mit einer vorspannung
WO2019005260A1 (en) 2017-06-29 2019-01-03 Apple Inc. FLIGHT TIME DEPTH MAPPING WITH PARALLAX COMPENSATION
US10955552B2 (en) 2017-09-27 2021-03-23 Apple Inc. Waveform design for a LiDAR system with closely-spaced pulses
WO2019098035A1 (ja) 2017-11-15 2019-05-23 ソニーセミコンダクタソリューションズ株式会社 光検出素子およびその製造方法
CN111465870B (zh) 2017-12-18 2023-08-29 苹果公司 使用可寻址发射器阵列的飞行时间感测
US10312274B1 (en) 2018-01-29 2019-06-04 Stmicroelectronics (Research & Development) Limited Single photon avalanche diode (SPAD) with variable quench resistor
JP7169071B2 (ja) 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US20220302184A1 (en) * 2018-02-13 2022-09-22 Sense Photonics, Inc. High quantum efficiency geiger-mode avalanche diodes including high sensitivity photon mixing structures and arrays thereof
IT201800007231A1 (it) * 2018-07-16 2020-01-16 Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione
JP6975113B2 (ja) 2018-09-19 2021-12-01 株式会社東芝 光検出素子、光検出器、光検出システム、ライダー装置及び車
US10971643B2 (en) * 2018-10-24 2021-04-06 Avago Technologies International Sales Pte. Limited Implementation of an optimized avalanche photodiode (APD)/single photon avalanche diode (SPAD) structure
JP2022506487A (ja) * 2018-10-30 2022-01-17 センス・フォトニクス，インコーポレイテッド 高感度光子混合構造を含む高量子効率ガイガモード・アバランシェ・ダイオード及びそのアレイ
JP7313829B2 (ja) * 2019-01-29 2023-07-25 キヤノン株式会社 撮像素子および撮像装置
US20200256993A1 (en) 2019-02-11 2020-08-13 Apple Inc. Depth sensing using a sparse array of pulsed beams
US11500094B2 (en) 2019-06-10 2022-11-15 Apple Inc. Selection of pulse repetition intervals for sensing time of flight
EP3761376A1 (en) * 2019-07-01 2021-01-06 IMEC vzw Single-photon avalanche diode detector array
US10881028B1 (en) 2019-07-03 2020-12-29 Apple Inc. Efficient heat removal from electronic modules
US11555900B1 (en) 2019-07-17 2023-01-17 Apple Inc. LiDAR system with enhanced area coverage
JP2021027192A (ja) * 2019-08-06 2021-02-22 株式会社東芝 受光装置、受光装置の製造方法及び距離計測装置
JP7328868B2 (ja) * 2019-10-30 2023-08-17 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
US11733359B2 (en) 2019-12-03 2023-08-22 Apple Inc. Configurable array of single-photon detectors
US11349042B2 (en) 2019-12-18 2022-05-31 Stmicroelectronics (Research & Development) Limited Anode sensing circuit for single photon avalanche diodes
US11502120B2 (en) * 2019-12-19 2022-11-15 Omnivision Technologies, Inc. Negatively biased isolation structures for pixel devices
US11508867B2 (en) * 2020-01-28 2022-11-22 Adaps Photonics Inc. Single photon avalanche diode device
KR20210121851A (ko) * 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 이미지 센싱 장치
CN111628007B (zh) * 2020-04-29 2023-09-05 株洲中车时代半导体有限公司 功率二极管及其制造方法
US11710945B2 (en) 2020-05-25 2023-07-25 Apple Inc. Projection of patterned and flood illumination
US11699715B1 (en) 2020-09-06 2023-07-11 Apple Inc. Flip-chip mounting of optoelectronic chips
JP2022143820A (ja) * 2021-03-18 2022-10-03 株式会社東芝 半導体装置
JP2022147766A (ja) * 2021-03-23 2022-10-06 株式会社東芝 光検出器
CN113299787B (zh) * 2021-05-21 2022-04-29 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
US11681028B2 (en) 2021-07-18 2023-06-20 Apple Inc. Close-range measurement of time of flight using parallax shift
CN114068814B (zh) * 2021-11-24 2023-03-24 苏州纳芯微电子股份有限公司 半导体电阻及磁场感测系统
CN114141903B (zh) * 2021-11-26 2023-11-21 中国科学院长春光学精密机械与物理研究所 双pn结式硅基光电二极管及其制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313127A (en) * 1980-03-06 1982-01-26 Hughes Aircraft Company Signal detection method for IR detector having charge readout structure
FR2633101B1 (fr) * 1988-06-16 1992-02-07 Commissariat Energie Atomique Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication
JP3029497B2 (ja) * 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
RU2102821C1 (ru) 1996-10-10 1998-01-20 Зираддин Ягуб-оглы Садыгов Лавинный фотодиод
JP3618517B2 (ja) * 1997-06-18 2005-02-09 三菱電機株式会社 半導体装置およびその製造方法
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
US6307244B1 (en) * 1998-08-12 2001-10-23 Rohm Co., Ltd. Schottky barrier semiconductor device
US6118142A (en) * 1998-11-09 2000-09-12 United Microelectronics Corp. CMOS sensor
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
IT1317199B1 (it) * 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
JP3628936B2 (ja) * 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US6541836B2 (en) * 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
JP4227069B2 (ja) 2004-05-07 2009-02-18 ローム株式会社 光電変換デバイス、イメージセンサおよび光電変換デバイスの製造方法
DE102004022948B4 (de) 2004-05-10 2006-06-01 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Strahlungsdetektor
US7122840B2 (en) * 2004-06-17 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard ring and fabrication method thereof
GB0417749D0 (en) * 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
US7781826B2 (en) * 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
US7791161B2 (en) * 2005-08-25 2010-09-07 Freescale Semiconductor, Inc. Semiconductor devices employing poly-filled trenches
JP5157201B2 (ja) * 2006-03-22 2013-03-06 株式会社デンソー 半導体装置
KR100819711B1 (ko) * 2006-12-27 2008-04-04 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조 방법
EP2150991B1 (en) * 2007-04-24 2017-09-27 Koninklijke Philips N.V. Method of forming an avalanche photodiode integrated with cmos circuitry and silicon photomultiplier manufactured by said method
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
JP2009033043A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 光半導体装置
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
JP4599379B2 (ja) * 2007-08-31 2010-12-15 株式会社東芝 トレンチゲート型半導体装置
JP2009065162A (ja) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione

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