IT1399075B1 - Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione - Google Patents
Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazioneInfo
- Publication number
- IT1399075B1 IT1399075B1 ITVA2010A000026A ITVA20100026A IT1399075B1 IT 1399075 B1 IT1399075 B1 IT 1399075B1 IT VA2010A000026 A ITVA2010A000026 A IT VA2010A000026A IT VA20100026 A ITVA20100026 A IT VA20100026A IT 1399075 B1 IT1399075 B1 IT 1399075B1
- Authority
- IT
- Italy
- Prior art keywords
- geiger
- mode
- photodiods
- photodiodo
- photons
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2010A000026A IT1399075B1 (it) | 2010-03-23 | 2010-03-23 | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
US13/053,595 US8723100B2 (en) | 2010-03-23 | 2011-03-22 | Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process |
US13/460,007 US8860166B2 (en) | 2010-03-23 | 2012-04-30 | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2010A000026A IT1399075B1 (it) | 2010-03-23 | 2010-03-23 | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
Publications (2)
Publication Number | Publication Date |
---|---|
ITVA20100026A1 ITVA20100026A1 (it) | 2011-09-24 |
IT1399075B1 true IT1399075B1 (it) | 2013-04-05 |
Family
ID=43012637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITVA2010A000026A IT1399075B1 (it) | 2010-03-23 | 2010-03-23 | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
Country Status (2)
Country | Link |
---|---|
US (1) | US8723100B2 (it) |
IT (1) | IT1399075B1 (it) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1399075B1 (it) * | 2010-03-23 | 2013-04-05 | St Microelectronics Srl | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
EP2603931B1 (en) | 2010-08-10 | 2016-03-23 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Silicon photoelectric multiplier with multiple "isochronic" read-out |
IT1402264B1 (it) | 2010-09-16 | 2013-08-28 | St Microelectronics Srl | Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode |
TWI458111B (zh) * | 2011-07-26 | 2014-10-21 | Univ Nat Central | 水平式累崩型光檢測器結構 |
US9917118B2 (en) * | 2011-09-09 | 2018-03-13 | Zecotek Imaging Systems Pte. Ltd. | Photodetector array and method of manufacture |
FR2984607A1 (fr) * | 2011-12-16 | 2013-06-21 | St Microelectronics Crolles 2 | Capteur d'image a photodiode durcie |
US9634156B2 (en) * | 2012-05-25 | 2017-04-25 | Sensl Technologies Ltd. | Semiconductor photomultiplier and readout method |
JP5984617B2 (ja) * | 2012-10-18 | 2016-09-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP6145655B2 (ja) * | 2012-12-18 | 2017-06-14 | パナソニックIpマネジメント株式会社 | 半導体光検出器 |
KR101968351B1 (ko) * | 2013-01-28 | 2019-08-13 | 서울대학교산학협력단 | 반도체 장치 및 그 제조 방법 |
US11837669B2 (en) | 2013-03-15 | 2023-12-05 | ActLight SA | Photo detector systems and methods of operating same |
US11114480B2 (en) | 2013-03-15 | 2021-09-07 | ActLight SA | Photodetector |
US10964837B2 (en) | 2013-03-15 | 2021-03-30 | ActLight SA | Photo detector systems and methods of operating same |
US9160949B2 (en) * | 2013-04-01 | 2015-10-13 | Omnivision Technologies, Inc. | Enhanced photon detection device with biased deep trench isolation |
JP6383516B2 (ja) | 2013-04-19 | 2018-08-29 | ライトスピン テクノロジーズ、インク. | 集積アバランシェ・フォトダイオード・アレイ |
US9252317B2 (en) * | 2013-08-13 | 2016-02-02 | Zecotek Photonics Inc. | Multi-pixel avalanche transistor |
JP6386847B2 (ja) * | 2014-09-19 | 2018-09-05 | 浜松ホトニクス株式会社 | 紫外線センサ及び紫外線検出装置 |
US9768211B2 (en) | 2015-05-06 | 2017-09-19 | LightSpin Technologies Inc. | Integrated avalanche photodiode arrays |
US9634154B1 (en) * | 2015-10-30 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Schottky diode having a well with peripherial cathod regions and center andoe region |
EP3206234B1 (en) * | 2016-02-09 | 2023-08-09 | ams AG | Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element |
EP3255456B1 (en) * | 2016-06-07 | 2021-01-06 | ams AG | Optical sensor arrangement and method for manufacturing an optical sensor arrangement |
WO2018021411A1 (ja) * | 2016-07-27 | 2018-02-01 | 浜松ホトニクス株式会社 | 光検出装置 |
US10658415B2 (en) | 2016-07-27 | 2020-05-19 | Hamamatsu Photonics K.K. | Light detection device |
CN108475689B (zh) * | 2016-10-18 | 2023-05-12 | 索尼半导体解决方案公司 | 传感器 |
JP7058479B2 (ja) | 2016-10-18 | 2022-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
US10529884B2 (en) | 2017-11-09 | 2020-01-07 | LightSpin Technologies Inc. | Virtual negative bevel and methods of isolating adjacent devices |
DE112018005850T5 (de) | 2017-11-15 | 2020-08-13 | Sony Semiconductor Solutions Corporation | Lichtdetektionselement und herstellungsverfahren für selbiges |
JP7169071B2 (ja) * | 2018-02-06 | 2022-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
US10636818B2 (en) * | 2018-04-04 | 2020-04-28 | Avago Technologies International Sales Pte. Limited | Semiconductor device and sensor including a single photon avalanche diode (SPAD) structure |
JP7129199B2 (ja) * | 2018-04-11 | 2022-09-01 | キヤノン株式会社 | 光検出装置、光検出システム及び移動体 |
JP6975110B2 (ja) | 2018-09-13 | 2021-12-01 | 株式会社東芝 | 光検出素子、光検出システム、ライダー装置及び車 |
FR3089348B1 (fr) * | 2018-11-30 | 2020-10-30 | Commissariat Energie Atomique | procede de fabrication d’une matrice de diodes a base de germanium et a faible courant d’obscurité |
JP2020155503A (ja) * | 2019-03-19 | 2020-09-24 | 株式会社東芝 | 光検出装置 |
DE102019204701A1 (de) * | 2019-04-02 | 2020-10-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodioden-Array |
US11251217B2 (en) * | 2019-04-17 | 2022-02-15 | ActLight SA | Photodetector sensor arrays |
EP3748698A1 (en) * | 2019-06-03 | 2020-12-09 | Ams Ag | Semiconductor body, avalanche photodiode and method for fabricating a semiconductor body |
EP3761376A1 (en) * | 2019-07-01 | 2021-01-06 | IMEC vzw | Single-photon avalanche diode detector array |
JP7222851B2 (ja) * | 2019-08-29 | 2023-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
US11346924B2 (en) | 2019-12-09 | 2022-05-31 | Waymo Llc | SiPM with cells of different sizes |
JP2021135229A (ja) * | 2020-02-28 | 2021-09-13 | 浜松ホトニクス株式会社 | 光検出装置 |
US11735677B2 (en) * | 2020-07-20 | 2023-08-22 | ActLight SA | Photodetectors and photodetector arrays |
JP2022039524A (ja) * | 2020-08-28 | 2022-03-10 | 株式会社東芝 | 半導体装置 |
CN116762021A (zh) * | 2021-02-09 | 2023-09-15 | 深圳市大疆创新科技有限公司 | 激光接收电路及其控制方法、测距装置、移动平台 |
US12034025B2 (en) | 2021-05-13 | 2024-07-09 | Semiconductor Components Industries, Llc | Semiconductor devices with single-photon avalanche diodes and isolation structures |
CN118554301A (zh) * | 2024-07-26 | 2024-08-27 | 中铁一局集团电务工程有限公司 | 一种减少串电的防尘电控柜及其工作方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9827748D0 (en) * | 1998-12-18 | 1999-02-10 | Secr Defence | Improvements in avalanche photo-diodes |
IT1316794B1 (it) * | 2000-03-09 | 2003-05-12 | Milano Politecnico | Circuito per rilevare con elevata precisione il tempo di arrivo deifotoni incidenti su fotodiodi a valanga a singolo fotone |
WO2006034585A1 (en) | 2004-09-28 | 2006-04-06 | UNIVERSITé DE SHERBROOKE | Method and system for low radiation computed tomography (ct) |
US7262402B2 (en) | 2005-02-14 | 2007-08-28 | Ecole Polytechnique Federal De Lausanne | Integrated imager circuit comprising a monolithic array of single photon avalanche diodes |
RU2411542C2 (ru) | 2005-04-22 | 2011-02-10 | Конинклейке Филипс Электроникс Н.В. | Цифровой кремниевый фотоумножитель для врп-пэт |
US7403589B1 (en) | 2007-03-27 | 2008-07-22 | General Electric Company | Photon counting CT detector using solid-state photomultiplier and scintillator |
DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
ITTO20080045A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
US7956332B2 (en) | 2008-10-29 | 2011-06-07 | General Electric Company | Multi-layer radiation detector assembly |
IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
IT1393781B1 (it) * | 2009-04-23 | 2012-05-08 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
US8084795B2 (en) * | 2009-05-22 | 2011-12-27 | James Nan Hsi Pan | Resonant cavity complementary optoelectronic transistors |
US20120199932A1 (en) * | 2009-10-12 | 2012-08-09 | The Regents Of The University Of California | Low noise, stable avalanche photodiode |
IT1399075B1 (it) * | 2010-03-23 | 2013-04-05 | St Microelectronics Srl | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
US8860166B2 (en) * | 2010-03-23 | 2014-10-14 | Stmicroelectronics S.R.L. | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
IT1399690B1 (it) * | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
-
2010
- 2010-03-23 IT ITVA2010A000026A patent/IT1399075B1/it active
-
2011
- 2011-03-22 US US13/053,595 patent/US8723100B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8723100B2 (en) | 2014-05-13 |
ITVA20100026A1 (it) | 2011-09-24 |
US20110272561A1 (en) | 2011-11-10 |
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