JP2022039524A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 252
- 239000012535 impurity Substances 0.000 claims abstract description 40
- 238000010791 quenching Methods 0.000 claims abstract description 26
- 239000000969 carrier Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000003491 array Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
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Abstract
Description
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
以下の説明及び図面において、n+、n及びp+、p、p-の表記は、各不純物濃度の相対的な高低を表す。すなわち、「+」が付されている表記は、「+」及び「-」のいずれも付されていない表記よりも不純物濃度が相対的に高く、「-」が付されている表記は、いずれも付されていない表記よりも不純物濃度が相対的に低いことを示す。これらの表記は、それぞれの領域にp形不純物とn形不純物の両方が含まれている場合には、それらの不純物が補償しあった後の正味の不純物濃度の相対的な高低を表す。
以下で説明する各実施形態について、各半導体領域のp形とn形を反転させて各実施形態を実施してもよい。
図1は、第1実施形態に係る半導体装置を表す模式的平面図である。図2は、図1のA1-A2断面図である。
図1及び図2に表したように、第1実施形態に係る半導体装置100は、導電層1、素子部10、絶縁部20、クエンチ部30、絶縁層40、及び配線41を含む。図1では、絶縁層40が省略されている。また、コンタクトプラグが破線で表されている。
素子部10に光が入射すると、素子部10で電荷が生成される。例えば、p+形半導体領域12とn+形半導体領域13との間には降伏電圧を超える逆電圧が印加され、素子部10はガイガーモードで動作する。素子部10で発生した電荷により降伏が生じ、多量の電荷が生成される。電荷は、n+形半導体領域13及びクエンチ部30を通って配線41へ流れ、半導体装置100の外部に取り出される。
p-形半導体領域11、p+形半導体領域12、n+形半導体領域13、及びn形半導体領域14、シリコン、炭化シリコン、ガリウムヒ素、窒化ガリウムなどの半導体材料を含む。半導体材料としてシリコンが用いられるとき、リン、ヒ素、又はアンチモンがn形不純物として用いられる。ボロンがp形不純物として用いられる。
図3は、参考例に係る半導体装置を表す断面図である。
参考例に係る半導体装置100rでは、素子部10において、n形半導体領域14が設けられていない。p+形半導体領域12及びn+形半導体領域13は、絶縁部20と接している。
図4は、第2実施形態に係る半導体装置を表す断面図である。
第2実施形態に係る半導体装置200では、半導体装置100と比べて、素子部10がp形半導体領域15(第5半導体領域)をさらに含む。
上述した通り、n形半導体領域14へ流れるキャリアの量を低減すると、光に対する感度が向上する。半導体装置200では、図5に表したように、p形半導体領域15において、電気力線ELを素子部10の内側に向けることができる。これにより、n形半導体領域14へのキャリアの流れを抑制でき、キャリアがp+形半導体領域12に向けて流れ易くなる。第2実施形態によれば、第1実施形態に比べて、半導体装置200の受光感度を向上できる。
図6(a)に表したp形半導体領域15の長さL3は、図6(b)に表したn形半導体領域14の長さL4の、0.8倍より長く1.2倍未満であることが好ましい。長さL3及びL4は、それぞれ、素子部10から絶縁部20に向かう方向におけるp形半導体領域15の長さ及びn形半導体領域14の長さである。長さL3が長さL4の0.8倍未満であると、n形半導体領域14へのキャリアの流れを抑制する効果が弱まる。長さL3が長さL4の1.2倍を超えると、n形半導体領域14へのキャリアの流れを抑制する効果が実質的に変化せずに、p形半導体領域15の容量が増加する。長さL3が長さL4の0.8倍より長く1.2倍未満であることで、p形半導体領域15の容量の増大を抑制しつつ、n形半導体領域14へのキャリアの流れを効果的に抑制できる。
図7は、第3実施形態に係る半導体装置を表す回路図である。
第3実施形態に係る半導体装置300は、複数の素子アレイAr1~Arn及び複数のトランジスタTr1~Trnを含む。
Claims (9)
- 第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第2半導体領域と、
前記第2半導体領域の上に設けられた第2導電形の第3半導体領域と、
前記第1半導体領域から前記第2半導体領域に向かう第1方向と交差する第1面に沿って前記第2半導体領域及び前記第3半導体領域の周りに設けられ、前記第3半導体領域よりも低い第2導電形の不純物濃度を有する第2導電形の第4半導体領域と、
を含む素子部と、
前記第1面に沿って前記素子部の周りに設けられた絶縁部と、
前記第3半導体領域と電気的に接続されたクエンチ部と、
を備えた半導体装置。 - 前記第4半導体領域の下端は、前記第2半導体領域の下端よりも上方に位置する請求項1記載の半導体装置。
- 前記素子部は、前記第4半導体領域の下に設けられた第1導電形の第5半導体領域をさらに含み、
前記第5半導体領域における第1導電形の不純物濃度は、前記第1半導体領域における第1導電形の不純物濃度よりも高く、前記第2半導体領域における第1導電形の不純物濃度よりも低い請求項1又は2に記載の半導体装置。 - 前記第5半導体領域は、前記第1方向において前記第4半導体領域から離れ、
前記素子部の上面と前記第5半導体領域の下端との間の前記第1方向における距離は、2.5μmよりも長く、4μmよりも短い請求項3記載の半導体装置。 - 前記第5半導体領域の前記第1方向における長さは、前記第4半導体領域の前記第1方向における長さよりも短い請求項3又は4記載の半導体装置。
- 前記素子部から前記絶縁部に向かう方向における前記第5半導体領域の長さは、前記方向における前記第4半導体領域の長さの0.8倍より大きく1.2倍未満である請求項3~5のいずれか1つに記載の半導体装置。
- 前記素子部は、前記第1方向に交差する第2方向と、前記第1方向及び前記第2方向に沿う面と交差する第3方向と、において複数設けられた請求項1~6のいずれか1つに記載の半導体装置。
- 前記素子部は、ガイガーモードで動作される請求項1~7のいずれか1つに記載の半導体装置。
- 前記素子部と電気的に接続されたトランジスタをさらに備えた請求項1~8のいずれか1つに記載の半導体装置。
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