JP2019530215A - 積層背面照射型spadアレイ - Google Patents
積層背面照射型spadアレイ Download PDFInfo
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Abstract
Description
この特許協力条約特許出願は、2016年9月23日に出願された「Back−Illuminated SPAD Image Sensor」と題する米国仮特許出願第62/398,712号、及び2016年9月23日に出願された「Back−Illuminated SPAD Image Sensor」と題する米国仮特許出願第62/398,709号に対する優先権を主張し、これらの内容は、それらの全体が参照により本明細書に組み込まれている。
第1のコンタクトパッド710は、カソード領域706の中心の下に位置するように描かれているが、これは必須ではない。第1のコンタクトパッド710は、SPAD活性領域内の任意の好適な場所に置かれてもよい。
Claims (21)
- 背面照射型単一光子アバランシェダイオード(SPAD)画像センサであって、
センサウェハであって、
SPAD領域であって、
第1のドーパント型を含むアノード勾配層と、
前記SPAD領域の前面に隣接して配置され、第2のドーパント型を含むカソード領域と、
前記カソード領域上に配置され、前記第1のドーパント型を含むアノードアバランシェ層と、を含む、SPAD領域、を含み、
前記カソード領域は第1の面積を有し、前記アノードアバランシェ層は前記第1の面積よりも小さい第2の面積を有し、
前記アノード勾配層における前記第1のドーパント型のドーパント濃度を、前記センサウェハの背面でより高く、前記アノード勾配層の前面でより低くして、光子生成電荷キャリアを、前記アノード勾配層を介して前記アノードアバランシェ層に導く、前記アノード勾配層内のドーパント濃度勾配を生じさせる、センサウェハと、
前記センサウェハの下に配置され、前記センサウェハに取り付けられた回路ウェハと、を備える、背面照射型SPAD画像センサ。 - 前記回路ウェハは、
第1のウェハ間コネクタを介して前記SPAD領域に結合された電圧源と、
第2のウェハ間コネクタを介して前記カソード領域に結合された出力回路と、を含み、
前記電圧源は、前記SPAD領域に高電圧を供給して、前記カソード領域と前記アノード勾配層との間に逆バイアスを提供するように構成されている、請求項1に記載の背面照射型SPAD画像センサ。 - 前記SPAD領域に隣接するディープトレンチ分離領域であって、前記SPAD領域の前記前面から、前記センサウェハの前記背面まで及び前記背面を通って延在する、ディープトレンチ分離領域を更に備える、請求項2に記載の背面照射型SPAD画像センサ。
- 前記第1のドーパント型を含み、前記センサウェハの前記背面から前記SPAD領域の前記前面まで、前記ディープトレンチ分離領域の外面に沿って延在するピンニング層であって、前記第1のウェハ間コネクタに接続している、ピンニング層を更に備える、請求項3に記載の背面照射型SPAD画像センサ。
- 前記電圧源は、前記第1のウェハ間コネクタを介して、前記ピンニング層に絶縁電圧を提供するように構成されている、請求項4に記載の背面照射型SPAD画像センサ。
- 前記SPAD領域の前記前面において前記ディープトレンチ分離領域の前記外面に隣接し、前記第1のドーパント型を含むドープウェルであって、前記ピンニング層及び前記第1のウェハ間コネクタに接続している、ドープウェルを更に備える、請求項5に記載の背面照射型SPAD画像センサ。
- 前記電圧源は、前記第1のウェハ間コネクタを介して前記ドープウェルに前記絶縁電圧を提供するように構成されている、請求項6に記載の背面照射型SPAD画像センサ。
- 前記ディープトレンチ分離領域の前記外面及び前記SPAD領域の前記前面に隣接し、前記第1のドーパント型を含む拡散領域であって、前記ドープウェルに接続している、拡散領域を更に備える、請求項6に記載の背面照射型SPAD画像センサ。
- 前記ディープトレンチ分離領域上に、前記センサウェハの前記背面上に配置された光シールドを更に備える、請求項3に記載の背面照射型SPAD画像センサ。
- 横方向シールドが、前記SPAD領域の少なくとも一部の下に横方向に延在して、光子を前記SPAD領域に反射し戻す、請求項1に記載の背面照射型SPAD画像センサ。
- 前記アノードアバランシェ層が、前記アノードアバランシェ層の前記カソード領域との接合のブレークダウン電圧の前に、印加された逆バイアス電圧で電荷キャリアが空乏化するようなドーピングレベルを有する、請求項1に記載の背面照射型SPAD画像センサ。
- 電子デバイスであって、
背面照射型単一光子アバランシェダイオード(SPAD)画像センサであって、
センサウェハであって、
第1のSPAD領域、及び前記第1のSPAD領域に隣接する第2のSPAD領域であって、前記第1及び前記第2のSPAD領域のそれぞれが、
第1のドーパントを含むアノード勾配層と、
第2のドーパントを含み、前記SPAD領域の前面に隣接するカソード領域と、
前記第1のドーパントを含み、前記カソード領域上に配置されたアノードアバランシェ層と、
前記第1のSPAD領域と前記第2のSPAD領域との間に配置されたディープトレンチ分離領域であって、前記センサウェハの背面を通って延在する、ディープトレンチ分離領域と、を含む、第1のSPAD領域及び第2のSPAD領域と、を含む、センサウェハと、
前記センサウェハの前記前面に取り付けられた回路ウェハと、を含む、背面照射型単一光子アバランシェダイオード(SPAD)画像センサと、
前記背面照射型SPAD画像センサに動作可能に接続された処理デバイスであって、
前記背面照射型SPAD画像センサからの出力信号を受信し、
前記出力信号に基づいて、飛行時間データを判定するように構成されている、処理デバイスと、を備える、電子デバイス。 - 前記回路ウェハは、
第1のウェハ間コネクタを介して前記第1のSPAD領域に結合され、第2のウェハ間コネクタを介して前記第2のSPAD領域に結合された電圧源であって、前記第1及び第2のSPAD領域に高い逆バイアス電圧レベルを提供するように構成されている、電圧源と、
第3のウェハ間コネクタを介してそれぞれのカソード領域に結合された出力回路と、を含む、請求項12に記載の電子デバイス。 - 前記ディープトレンチ分離領域は、
ビアと、
前記ビア内に配置された導電材料と、を含む、請求項13に記載の電子デバイス。 - 前記導電材料は、第4のウェハ間コネクタを介して前記電圧源に接続され、前記電圧源は、前記導電材料に絶縁電圧を提供するように更に構成されている、請求項14に記載の電子デバイス。
- 前記ディープトレンチ分離領域は、
ビアと、
前記ビア内に配置された絶縁材料と、を含む、請求項12に記載の電子デバイス。 - 前記ディープトレンチ分離領域は、
ビアと、
交互する低屈折率材料層と高屈折率材料層と、を含む、請求項12に記載の電子デバイス。 - 前記ディープトレンチ分離領域の外面上に配置されたパッシベーション層を更に備える、請求項12に記載の電子デバイス。
- 前記ディープトレンチ分離領域の外面上に配置され、前記第1のドーパントを含むピンニング層と、
前記アノード勾配層の前記前面に隣接する前記ディープトレンチ分離領域の前記外面の一部上に配置され、前記第1のドーパントを含むドープウェルと、を更に備え、前記ドープウェルは前記ピンニング層に接続されている、請求項12に記載の電子デバイス。 - 背面照射型単一光子アバランシェダイオード(SPAD)画像センサであって、
センサウェハであって、
SPAD領域のアレイであって、各SPAD領域が、
前記センサウェハの背面に隣接するより高いドーパント濃度と、前記SPAD領域の前面に隣接するより低いドーパント濃度とを有する、ドーパント濃度勾配内に構成されている、第1のドーパント型を含むアノード勾配層と、
第2のドーパント型を含み、前記SPAD領域の前記前面に隣接して配置されたカソード領域であって、第1の面積を有する、カソード領域と、
前記第1のドーパント型を含み、前記カソード領域上に配置されたアノードアバランシェ層であって、前記第1の面積よりも小さい第2の面積を有する、アノードアバランシェ層と、を含む、SPAD領域のアレイと、
前記SPAD領域のアレイ内の各SPAD領域に隣接するディープトレンチ分離領域と、
前記ディープトレンチ分離領域上に配置された光シールドと、
前記ディープトレンチ分離領域の外面上に配置されたパッシベーション層と、
各SPAD領域の少なくとも一部の下に配置された光リフレクタと、を含む、センサウェハと、
前記センサウェハの下に配置され、前記センサウェハに取り付けられた回路ウェハと、を備える、背面照射型SPAD画像センサ。 - 前記ディープトレンチ分離領域は、
ビアと、
交互する低屈折率材料層と高屈折率材料層と、を含む、請求項20に記載の背面照射型SPAD画像センサ。
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US10438987B2 (en) | 2019-10-08 |
US20200286946A1 (en) | 2020-09-10 |
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