FR3056019B1 - Photodiode de type spad - Google Patents
Photodiode de type spad Download PDFInfo
- Publication number
- FR3056019B1 FR3056019B1 FR1658513A FR1658513A FR3056019B1 FR 3056019 B1 FR3056019 B1 FR 3056019B1 FR 1658513 A FR1658513 A FR 1658513A FR 1658513 A FR1658513 A FR 1658513A FR 3056019 B1 FR3056019 B1 FR 3056019B1
- Authority
- FR
- France
- Prior art keywords
- photodiode
- spad type
- spad
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1658513A FR3056019B1 (fr) | 2016-09-13 | 2016-09-13 | Photodiode de type spad |
US16/325,369 US10651332B2 (en) | 2016-09-13 | 2017-09-11 | SPAD photodiode |
CN201780056184.5A CN109690792B (zh) | 2016-09-13 | 2017-09-11 | Spad光电二极管 |
PCT/FR2017/052406 WO2018050996A1 (fr) | 2016-09-13 | 2017-09-11 | Photodiode de type spad |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1658513 | 2016-09-13 | ||
FR1658513A FR3056019B1 (fr) | 2016-09-13 | 2016-09-13 | Photodiode de type spad |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3056019A1 FR3056019A1 (fr) | 2018-03-16 |
FR3056019B1 true FR3056019B1 (fr) | 2018-10-12 |
Family
ID=57680377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1658513A Active FR3056019B1 (fr) | 2016-09-13 | 2016-09-13 | Photodiode de type spad |
Country Status (4)
Country | Link |
---|---|
US (1) | US10651332B2 (fr) |
CN (1) | CN109690792B (fr) |
FR (1) | FR3056019B1 (fr) |
WO (1) | WO2018050996A1 (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10658419B2 (en) * | 2016-09-23 | 2020-05-19 | Apple Inc. | Stacked backside illuminated SPAD array |
US10656251B1 (en) | 2017-01-25 | 2020-05-19 | Apple Inc. | Signal acquisition in a SPAD detector |
CN110235024B (zh) | 2017-01-25 | 2022-10-28 | 苹果公司 | 具有调制灵敏度的spad检测器 |
US10962628B1 (en) | 2017-01-26 | 2021-03-30 | Apple Inc. | Spatial temporal weighting in a SPAD detector |
US10854646B2 (en) | 2018-10-19 | 2020-12-01 | Attollo Engineering, LLC | PIN photodetector |
US11233966B1 (en) | 2018-11-29 | 2022-01-25 | Apple Inc. | Breakdown voltage monitoring for avalanche diodes |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
RU2732694C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
FR3094571B1 (fr) * | 2019-03-27 | 2022-04-29 | St Microelectronics Crolles 2 Sas | Dispositif électronique à photodiode |
CN110190149B (zh) * | 2019-06-13 | 2021-04-27 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测增益结构 |
CN110212044B (zh) * | 2019-06-13 | 2021-07-20 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测结构及其制造方法 |
EP3761376A1 (fr) | 2019-07-01 | 2021-01-06 | IMEC vzw | Réseau de détecteurs de diode à avalanche de photon unique |
FR3101727B1 (fr) * | 2019-10-08 | 2021-09-17 | Commissariat Energie Atomique | procede de fabrication d’au moins une photodiode planaire contrainte en tension |
FR3103635A1 (fr) | 2019-11-26 | 2021-05-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images comportant une pluralité de photodiodes SPAD |
US11476372B1 (en) | 2020-05-13 | 2022-10-18 | Apple Inc. | SPAD-based photon detectors with multi-phase sampling TDCs |
FR3112421B1 (fr) | 2020-07-10 | 2022-11-11 | Commissariat Energie Atomique | Procédé de réalisation d’une structure d’isolation |
DE102021200828A1 (de) * | 2021-01-29 | 2022-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Fotodiode mit orthogonalem Schichtaufbau |
IT202100022547A1 (it) * | 2021-08-30 | 2023-03-02 | St Microelectronics Srl | Dispositivo opto-elettronico per il rilevamento e la localizzazione di oggetti per applicazioni lidar |
US20230063670A1 (en) * | 2021-08-31 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company Limited | Contact etch stop layer for a pixel sensor |
CN115332384A (zh) * | 2022-08-31 | 2022-11-11 | 武汉新芯集成电路制造有限公司 | 单光子探测器及其制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101379615B (zh) * | 2006-02-01 | 2013-06-12 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
IT1399690B1 (it) * | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
EP2592661B8 (fr) * | 2011-11-11 | 2019-05-22 | ams AG | Photodiode latérale à avalanche et son procédé de fabrication |
EP2747154B1 (fr) * | 2012-12-21 | 2020-04-01 | ams AG | Diode à avalanche monophotonique latérale et procédé de production d'une diode à avalanche monophotonique latérale |
EP2779255B1 (fr) * | 2013-03-15 | 2023-08-23 | ams AG | Photodiode à avalanche latérale à photon unique et son procédé de fabrication |
US9209320B1 (en) * | 2014-08-07 | 2015-12-08 | Omnivision Technologies, Inc. | Method of fabricating a single photon avalanche diode imaging sensor |
-
2016
- 2016-09-13 FR FR1658513A patent/FR3056019B1/fr active Active
-
2017
- 2017-09-11 WO PCT/FR2017/052406 patent/WO2018050996A1/fr active Application Filing
- 2017-09-11 CN CN201780056184.5A patent/CN109690792B/zh active Active
- 2017-09-11 US US16/325,369 patent/US10651332B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2018050996A1 (fr) | 2018-03-22 |
FR3056019A1 (fr) | 2018-03-16 |
CN109690792A (zh) | 2019-04-26 |
US10651332B2 (en) | 2020-05-12 |
CN109690792B (zh) | 2022-07-22 |
US20190198701A1 (en) | 2019-06-27 |
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