KR20180085036A - 애벌란시 광검출기 - Google Patents

애벌란시 광검출기 Download PDF

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Publication number
KR20180085036A
KR20180085036A KR1020187019642A KR20187019642A KR20180085036A KR 20180085036 A KR20180085036 A KR 20180085036A KR 1020187019642 A KR1020187019642 A KR 1020187019642A KR 20187019642 A KR20187019642 A KR 20187019642A KR 20180085036 A KR20180085036 A KR 20180085036A
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KR
South Korea
Prior art keywords
avalanche photodetector
avalanche
photodetector
Prior art date
Application number
KR1020187019642A
Other languages
English (en)
Other versions
KR101947088B1 (ko
Inventor
비탈리 엠마누일로비치 슈빈
드미트리 알렉세예비치 슈샤코브
니콜라이 아파나시예비치 콜로보브
Original Assignee
리미티드 라이어빌러티 컴퍼니 “데판” (엘엘씨 “데판”)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리미티드 라이어빌러티 컴퍼니 “데판” (엘엘씨 “데판”) filed Critical 리미티드 라이어빌러티 컴퍼니 “데판” (엘엘씨 “데판”)
Publication of KR20180085036A publication Critical patent/KR20180085036A/ko
Application granted granted Critical
Publication of KR101947088B1 publication Critical patent/KR101947088B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
KR1020187019642A 2016-09-20 2016-10-18 애벌란시 광검출기 KR101947088B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2016137501 2016-09-20
RU2016137501A RU2641620C1 (ru) 2016-09-20 2016-09-20 Лавинный фотодетектор
PCT/RU2016/000708 WO2018056861A1 (en) 2016-09-20 2016-10-18 Avalanche photodetectors

Publications (2)

Publication Number Publication Date
KR20180085036A true KR20180085036A (ko) 2018-07-25
KR101947088B1 KR101947088B1 (ko) 2019-02-12

Family

ID=61690924

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187019642A KR101947088B1 (ko) 2016-09-20 2016-10-18 애벌란시 광검출기

Country Status (7)

Country Link
US (1) US10340407B2 (ko)
EP (1) EP3387680B1 (ko)
JP (1) JP6524353B2 (ko)
KR (1) KR101947088B1 (ko)
IL (1) IL260188B (ko)
RU (1) RU2641620C1 (ko)
WO (1) WO2018056861A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200137248A (ko) * 2019-05-29 2020-12-09 한국과학기술원 광증배소자 및 그 제조방법

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US10641874B2 (en) * 2017-03-29 2020-05-05 Luminar Technologies, Inc. Sizing the field of view of a detector to improve operation of a lidar system
RU2732694C1 (ru) * 2019-03-12 2020-09-21 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
RU2732695C1 (ru) * 2019-03-12 2020-09-21 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
RU2731665C1 (ru) * 2019-03-12 2020-09-07 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
FR3102612B1 (fr) * 2019-10-28 2023-04-07 St Microelectronics Crolles 2 Sas Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré
WO2022125469A1 (en) * 2020-12-07 2022-06-16 Research Institute Corporation Ultrafast spatially resolving detector for photons and charged particles and applications thereof

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KR20020049159A (ko) * 2000-12-19 2002-06-26 오길록 아발란치 광 검출기
KR20040057855A (ko) * 2002-12-24 2004-07-02 한국전자통신연구원 광수신소자
KR100617724B1 (ko) * 2005-02-23 2006-08-28 삼성전자주식회사 애벌랜치 포토다이오드의 제작 방법
KR20090061307A (ko) * 2007-12-11 2009-06-16 한국전자통신연구원 실리콘 에피층을 이용한 ｃｍｏｓ 기반의 평판형 애벌란시포토다이오드 및 그 제조 방법
KR20150018518A (ko) * 2012-05-29 2015-02-23 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 독립적으로 제어가능한 흡수 영역 전기장 및 증식 영역 전기장을 포함하는 장치
KR101553817B1 (ko) * 2014-09-04 2015-10-01 주식회사 우리로 애벌란치 포토다이오드의 제조방법
KR20160053179A (ko) * 2014-10-31 2016-05-13 (재)한국나노기술원 변형된 도핑 및 조성 흡수층을 이용한 애벌랜치 포토다이오드

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US9219184B2 (en) * 2012-07-25 2015-12-22 Hewlett Packard Enterprise Development Lp Avalanche photodiodes with defect-assisted silicon absorption regions
JP2017508295A (ja) * 2014-03-10 2017-03-23 コリアント・アドヴァンスド・テクノロジー・エルエルシー ゲルマニウム金属非接触近赤外光検出器
CN105576072B (zh) * 2016-01-25 2018-02-23 武汉光电工业技术研究院有限公司 低噪声雪崩光电探测器及其制备方法

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Publication number Priority date Publication date Assignee Title
KR20020049159A (ko) * 2000-12-19 2002-06-26 오길록 아발란치 광 검출기
KR20040057855A (ko) * 2002-12-24 2004-07-02 한국전자통신연구원 광수신소자
KR100617724B1 (ko) * 2005-02-23 2006-08-28 삼성전자주식회사 애벌랜치 포토다이오드의 제작 방법
KR20090061307A (ko) * 2007-12-11 2009-06-16 한국전자통신연구원 실리콘 에피층을 이용한 ｃｍｏｓ 기반의 평판형 애벌란시포토다이오드 및 그 제조 방법
KR20150018518A (ko) * 2012-05-29 2015-02-23 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 독립적으로 제어가능한 흡수 영역 전기장 및 증식 영역 전기장을 포함하는 장치
KR101553817B1 (ko) * 2014-09-04 2015-10-01 주식회사 우리로 애벌란치 포토다이오드의 제조방법
KR20160053179A (ko) * 2014-10-31 2016-05-13 (재)한국나노기술원 변형된 도핑 및 조성 흡수층을 이용한 애벌랜치 포토다이오드

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200137248A (ko) * 2019-05-29 2020-12-09 한국과학기술원 광증배소자 및 그 제조방법

Also Published As

Publication number Publication date
EP3387680A1 (en) 2018-10-17
US20180351023A1 (en) 2018-12-06
EP3387680B1 (en) 2021-01-27
KR101947088B1 (ko) 2019-02-12
JP6524353B2 (ja) 2019-06-05
JP2019501535A (ja) 2019-01-17
WO2018056861A1 (en) 2018-03-29
IL260188B (en) 2021-08-31
US10340407B2 (en) 2019-07-02
RU2641620C1 (ru) 2018-01-18
IL260188A (en) 2019-01-31
EP3387680A4 (en) 2019-10-09

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