JP6524353B2 - アバランシェ光検出器 - Google Patents
アバランシェ光検出器 Download PDFInfo
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- JP6524353B2 JP6524353B2 JP2018536764A JP2018536764A JP6524353B2 JP 6524353 B2 JP6524353 B2 JP 6524353B2 JP 2018536764 A JP2018536764 A JP 2018536764A JP 2018536764 A JP2018536764 A JP 2018536764A JP 6524353 B2 JP6524353 B2 JP 6524353B2
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- 239000003989 dielectric material Substances 0.000 claims description 23
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- 229910052710 silicon Inorganic materials 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
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- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
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- 229910052715 tantalum Inorganic materials 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
202 光変換器
203 アバランシェ増幅器
205 乗算器層
206 第1の電極
Claims (24)
- アバランシェ光検出器(APD)であって、
信号を自由電荷キャリアの電流に変換するための光変換器と、
前記電流のための少なくとも1つのアバランシェ増幅器と、
を含み、
前記光変換器及び前記アバランシェ増幅器は、同じ基板上で隣同士に位置付けられ、かつ互いに直接に接触しており、
前記アバランシェ増幅器は、接触層及び乗算器層を含み、
前記乗算器層は、前記光変換器と同じ導電型の半導体から作られ、かつ1つの側で該光変換器に当接する前記基板に面しており、
第1の電極が、前記アバランシェ増幅器の前記接触層上にあり、一方で第2の電極が、前記基板の底面上にある、
ことを特徴とするアバランシェ光検出器(APD)。 - アバランシェ光検出器(APD)であって、
信号を自由電荷キャリアの電流に変換するための光変換器と、
前記電流のための少なくとも1つのアバランシェ増幅器と、
を含み、
前記光変換器及び前記アバランシェ増幅器は、同じ基板上で隣同士に位置付けられ、
前記アバランシェ増幅器は、接触層及び乗算器層、及び前記基板と該乗算器層の間のバッファ層を含み、
前記バッファ層は、前記光変換器に当接し、かつそれと直接に接触しており、
前記バッファ層は、前記光変換器と同じ導電型の半導体から作られ、
第1の電極が、前記アバランシェ増幅器の前記接触層上にあり、第2の電極が、前記基板の底面上にある、
ことを特徴とするアバランシェ光検出器(APD)。 - 前記アバランシェ増幅器の前記乗算器層は、前記光変換器と同じ半導体から作られることを特徴とする請求項1又は請求項2に記載のAPD。
- 前記バッファ層は、前記乗算器層及び光変換器と同じ半導体から作られることを特徴とする請求項2に記載のAPD。
- 前記バッファ層は、前記光変換器と同じ厚みを有することを特徴とする請求項2又は請求項4に記載のAPD。
- 前記アバランシェ増幅器は、前記乗算器層と前記接触層とによって形成されたP/N接合であることを特徴とする請求項1から請求項5のいずれか1項に記載のAPD。
- 前記光変換器の上面上のコレクター層、及び該コレクター層と前記アバランシェ増幅器の間の間隙を更に含むことを特徴とする請求項1から請求項6のいずれか1項に記載のAPD。
- 前記コレクター層は、前記光変換器と同じ導電型の半導体から作られることを特徴とする請求項7に記載のAPD。
- 前記コレクター層のドーピングレベルが、前記光変換器のドーピングレベルよりも高いことを特徴とする請求項7又は請求項8に記載のAPD。
- 前記コレクター層は、前記光変換器と同じ半導体から作られることを特徴とする請求項7から請求項9のいずれか1項に記載のAPD。
- 電極に面する前記アバランシェ増幅器の前記接触層の面が、前記コレクター層及び光変換器の上面との連続体であることを特徴とする請求項7から請求項10のいずれか1項に記載のAPD。
- 前記アバランシェ増幅器は、前記光変換器及びコレクター層の上面の下にあり、かつ該光変換器、該アバランシェ増幅器の前記接触層及び前記第1の電極の間に電気接続を形成しないことを特徴とする請求項7から請求項10のいずれか1項に記載のAPD。
- 前記アバランシェ増幅器は、前記光変換器及びコレクター層の上面の下に位置付けられ、かつ該コレクター層と該光変換器の間に電気接続を形成しないことを特徴とする請求項7に記載のAPD。
- 前記アバランシェ増幅器は、前記コレクター層の上面の下に位置付けられ、かつ該コレクター層との電気接続を形成しないことを特徴とする請求項7に記載のAPD。
- 前記アバランシェ増幅器と前記光変換器の間の誘電材料層を更に含むことを特徴とする請求項12又は請求項13に記載のAPD。
- 前記アバランシェ増幅器と前記コレクター層の間の誘電材料層を更に含むことを特徴とする請求項14に記載のAPD。
- 前記誘電材料層は、前記光変換器及びコレクター層の面を覆うことを特徴とする請求項15に記載のAPD。
- 前記誘電材料層は、前記コレクター層の面を覆うことを特徴とする請求項16に記載のAPD。
- 前記第1の電極と前記誘電材料層との上面上の追加の透明電極を更に含むことを特徴とする請求項17又は請求項18に記載のAPD。
- 前記アバランシェ増幅器の前記接触層の上面が、前記光変換器及びコレクター層の上面の上方にあることを特徴とする請求項7から請求項10のいずれか1項に記載のAPD。
- 前記光変換器と前記コレクター層との上面上にあり、かつ前記アバランシェ増幅器の外側面に当接する追加の誘電体層を更に含むことを特徴とする請求項20に記載のAPD。
- 前記第1の電極は、透明であり、かつ前記アバランシェ増幅器の前記接触層と前記誘電体層との上面上に置かれることを特徴とする請求項21に記載のAPD。
- 前記アバランシェ増幅器の前記接触層と前記第1の電極の間の追加の高抵抗材料層を更に含むことを特徴とする請求項1から請求項22のいずれか1項に記載のAPD。
- 前記アバランシェ増幅器の第1の電極が、互いに電気的に接続されることを特徴とする請求項1から請求項23のいずれか1項に記載のAPD。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016137501A RU2641620C1 (ru) | 2016-09-20 | 2016-09-20 | Лавинный фотодетектор |
RU2016137501 | 2016-09-20 | ||
PCT/RU2016/000708 WO2018056861A1 (en) | 2016-09-20 | 2016-10-18 | Avalanche photodetectors |
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Publication Number | Publication Date |
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JP2019501535A JP2019501535A (ja) | 2019-01-17 |
JP6524353B2 true JP6524353B2 (ja) | 2019-06-05 |
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JP2018536764A Active JP6524353B2 (ja) | 2016-09-20 | 2016-10-18 | アバランシェ光検出器 |
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US (1) | US10340407B2 (ja) |
EP (1) | EP3387680B1 (ja) |
JP (1) | JP6524353B2 (ja) |
KR (1) | KR101947088B1 (ja) |
IL (1) | IL260188B (ja) |
RU (1) | RU2641620C1 (ja) |
WO (1) | WO2018056861A1 (ja) |
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US10641874B2 (en) * | 2017-03-29 | 2020-05-05 | Luminar Technologies, Inc. | Sizing the field of view of a detector to improve operation of a lidar system |
RU2732694C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
RU2732695C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
KR102332051B1 (ko) * | 2019-05-29 | 2021-11-30 | 한국과학기술원 | 광증배소자 및 그 제조방법 |
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EP3117467A4 (en) * | 2014-03-10 | 2017-03-08 | Elenion Technologies, LLC | Germanium metal-contact-free near-ir photodetector |
KR101553817B1 (ko) * | 2014-09-04 | 2015-10-01 | 주식회사 우리로 | 애벌란치 포토다이오드의 제조방법 |
KR101663644B1 (ko) * | 2014-10-31 | 2016-10-10 | (재)한국나노기술원 | 변형된 도핑 및 조성 흡수층을 이용한 애벌랜치 포토다이오드 |
CN105576072B (zh) * | 2016-01-25 | 2018-02-23 | 武汉光电工业技术研究院有限公司 | 低噪声雪崩光电探测器及其制备方法 |
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2016
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JP2019501535A (ja) | 2019-01-17 |
US10340407B2 (en) | 2019-07-02 |
KR101947088B1 (ko) | 2019-02-12 |
RU2641620C1 (ru) | 2018-01-18 |
US20180351023A1 (en) | 2018-12-06 |
KR20180085036A (ko) | 2018-07-25 |
EP3387680A4 (en) | 2019-10-09 |
EP3387680A1 (en) | 2018-10-17 |
IL260188A (en) | 2019-01-31 |
IL260188B (en) | 2021-08-31 |
EP3387680B1 (en) | 2021-01-27 |
WO2018056861A1 (en) | 2018-03-29 |
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