FR3102612B1 - Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré - Google Patents

Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré Download PDF

Info

Publication number
FR3102612B1
FR3102612B1 FR1912072A FR1912072A FR3102612B1 FR 3102612 B1 FR3102612 B1 FR 3102612B1 FR 1912072 A FR1912072 A FR 1912072A FR 1912072 A FR1912072 A FR 1912072A FR 3102612 B1 FR3102612 B1 FR 3102612B1
Authority
FR
France
Prior art keywords
integrated circuit
array
diodes
single photon
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1912072A
Other languages
English (en)
Other versions
FR3102612A1 (fr
Inventor
Bastien Mamdy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1912072A priority Critical patent/FR3102612B1/fr
Priority to US17/076,281 priority patent/US11621363B2/en
Priority to CN202022416590.XU priority patent/CN213366608U/zh
Priority to CN202011162098.2A priority patent/CN112802912A/zh
Publication of FR3102612A1 publication Critical patent/FR3102612A1/fr
Application granted granted Critical
Publication of FR3102612B1 publication Critical patent/FR3102612B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)

Abstract

Un circuit intégré comprend un substrat (SBT) semiconducteur incorporant un réseau (RES) de diodes de type diode à avalanche déclenchée par photon individuel comportant au moins deux diodes (SPAD1, SPAD2) adjacentes l’une à l’autre, et un miroir de Bragg (MB) respectivement interposé entre lesdites au moins deux diodes (SPAD1, SPAD2) adjacentes, le miroir de Bragg (MB) étant adapté pour empêcher une propagation de lumière entre ces deux diodes. Figure pour l’abrégé : 2
FR1912072A 2019-10-28 2019-10-28 Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré Active FR3102612B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1912072A FR3102612B1 (fr) 2019-10-28 2019-10-28 Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré
US17/076,281 US11621363B2 (en) 2019-10-28 2020-10-21 Integrated circuit comprising a single photon-based avalanche diode array and method for manufacturing such integrated circuit
CN202022416590.XU CN213366608U (zh) 2019-10-28 2020-10-27 集成电路
CN202011162098.2A CN112802912A (zh) 2019-10-28 2020-10-27 包括雪崩二极管阵列的集成电路及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1912072 2019-10-28
FR1912072A FR3102612B1 (fr) 2019-10-28 2019-10-28 Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré

Publications (2)

Publication Number Publication Date
FR3102612A1 FR3102612A1 (fr) 2021-04-30
FR3102612B1 true FR3102612B1 (fr) 2023-04-07

Family

ID=69375552

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1912072A Active FR3102612B1 (fr) 2019-10-28 2019-10-28 Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré

Country Status (3)

Country Link
US (1) US11621363B2 (fr)
CN (2) CN213366608U (fr)
FR (1) FR3102612B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230131505A1 (en) * 2021-10-21 2023-04-27 Globalfoundries Singapore Pte. Ltd. Photodetectors with a deep trench isolation region that includes a bragg mirror
CN116884981B (zh) * 2023-06-07 2024-04-23 边际科技(珠海)有限公司 一种响应0.85微米雪崩二极管与平面透镜的集成结构及其制程

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667400B1 (en) * 2006-06-09 2010-02-23 Array Optronix, Inc. Back-illuminated Si photomultipliers: structure and fabrication methods
US9064764B2 (en) * 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
RU2641620C1 (ru) * 2016-09-20 2018-01-18 Общество с ограниченной ответственностью "ДЕтектор Фотонный Аналоговый" Лавинный фотодетектор
JP7237819B2 (ja) * 2017-03-22 2023-03-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置
JP6987529B2 (ja) * 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
US10373999B2 (en) * 2017-09-29 2019-08-06 Taiwan Semiconductor Manufacturing Company Ltd. Image sensor and associated fabricating method
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US10636818B2 (en) * 2018-04-04 2020-04-28 Avago Technologies International Sales Pte. Limited Semiconductor device and sensor including a single photon avalanche diode (SPAD) structure

Also Published As

Publication number Publication date
CN112802912A (zh) 2021-05-14
US11621363B2 (en) 2023-04-04
US20210126149A1 (en) 2021-04-29
FR3102612A1 (fr) 2021-04-30
CN213366608U (zh) 2021-06-04

Similar Documents

Publication Publication Date Title
FR3102612B1 (fr) Circuit integré comprenant un réseau de diodes à avalanche déclenchée par un photon unique et procédé de fabrication d’un tel circuit intégré
US8905632B2 (en) Interposer configuration with thermally isolated regions for temperature-sensitive opto-electronic components
FR3073669B1 (fr) Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
EP3506353A3 (fr) Appareil d'affichage doté d'un dispositif électroluminescent
EP3598499A3 (fr) Élément de réception de lumière, module de télémétrie et appareil électronique
WO2005073485A8 (fr) Structure a semi-conducteurs presentant des zones actives
WO2005083789A3 (fr) Dispositifs micro-optiques sur dispositifs optoelectroniques
FR3057995B1 (fr) Dispositif d'affichage et procede de fabrication d'un tel dispositif
EP2157623A4 (fr) Élément électroluminescent à semi-conducteur et son procédé de fabrication
TWI267206B (en) Package assembly
SG145722A1 (en) Light emitting apparatus
WO2019209460A3 (fr) Boîtier multipuce à structure 3d décalée
FR3078436B1 (fr) Circuit integre comprenant un substrat equipe d'une region riche en pieges, et procede de fabrication
NO20063098L (no) Solcelleanordning
WO2020229043A3 (fr) Composant optoélectronique, pixel, agencement d'affichage et procédé
FR3081155B1 (fr) Procede de fabrication d'un composant electronique a multiples ilots quantiques
DE68918983D1 (de) Halbleiteranordnung mit organischer Schicht, wie isolierende Zwischenschicht für Mehrschichtmetallisierung.
FR3076170B1 (fr) Procede de report de structures electroluminescentes
FR3042310A1 (fr) Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
KR101018709B1 (ko) 반도체 소자의 핀 저항 조절용 다이오드
FR3057396B1 (fr) Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
WO2009039811A3 (fr) Puce semi-conductrice émettant un rayonnement
FR3087581B1 (fr) Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique
FR2870043A1 (fr) Fabrication de zones actives de natures differentes directement sur isolant et application au transistor mos a simple ou double grille
IT1257386B (it) Supporto rivestito con diamante.

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20210430

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5