JP7178819B2 - 半導体光検出装置 - Google Patents
半導体光検出装置 Download PDFInfo
- Publication number
- JP7178819B2 JP7178819B2 JP2018146230A JP2018146230A JP7178819B2 JP 7178819 B2 JP7178819 B2 JP 7178819B2 JP 2018146230 A JP2018146230 A JP 2018146230A JP 2018146230 A JP2018146230 A JP 2018146230A JP 7178819 B2 JP7178819 B2 JP 7178819B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor
- cells
- main surface
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 346
- 239000000758 substrate Substances 0.000 claims description 193
- 210000004027 cell Anatomy 0.000 claims description 188
- 239000000463 material Substances 0.000 claims description 20
- 210000004460 N cell Anatomy 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- 230000003287 optical effect Effects 0.000 description 32
- 239000000853 adhesive Substances 0.000 description 28
- 230000001070 adhesive effect Effects 0.000 description 28
- 239000011521 glass Substances 0.000 description 27
- 238000010791 quenching Methods 0.000 description 23
- 230000000171 quenching effect Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 239000007769 metal material Substances 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000604 Ferrochrome Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
- G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/497—Means for monitoring or calibrating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Description
Claims (8)
- 互いに対向する第1主面及び第2主面と、行列状に2次元配列されている複数のセルと、を有する半導体基板と、
前記半導体基板の前記第1主面に配置されていると共に、前記複数のセルのそれぞれに電気的に接続されている第1配線と、
前記半導体基板の前記第1主面に配置されていると共に、前記複数のセルのそれぞれに電気的に接続されている第2配線と、
前記複数のセルのうちの互いに隣り合うセルを光学的に分離する遮光部材と、
前記遮光部材を覆っている絶縁膜と、を備え、
前記複数のセルのそれぞれは、ガイガーモードで動作する少なくとも1つのアバランシェフォトダイオードを含み、
前記アバランシェフォトダイオードは、第1半導体領域と、前記第1半導体領域とは異なる導電型の第2半導体領域と、を含み、
前記第1半導体領域及び前記第2半導体領域は、前記第1主面の一部を構成しており、
前記第1配線は、前記複数のセルのそれぞれに含まれる前記アバランシェフォトダイオードの前記第1半導体領域に電気的に接続されており、
前記第2配線は、前記複数のセルのそれぞれに含まれる前記アバランシェフォトダイオードの前記第2半導体領域に電気的に接続されており、
前記半導体基板には、前記半導体基板を貫通するトレンチが、前記第1主面に直交する方向から見て前記複数のセルのそれぞれを囲むように形成され、
前記遮光部材は、前記トレンチの前記第1主面での開口端と前記トレンチの前記第2主面での開口端との間で前記半導体基板の厚み方向に延在している第1部分と、前記第2主面から突出している第2部分と、を有し、
前記絶縁膜は、前記第2部分を覆っている部分を有する、
半導体光検出装置。 - 前記遮光部材は、光を反射する材料によって構成される、請求項1に記載の半導体光検出装置。
- 前記第1主面に直交する方向から見て、前記半導体基板における前記トレンチで囲まれている各領域は、内側に位置している第1領域と、前記第1領域を囲むように前記第1領域の外側に位置している第2領域と、を有し、
前記第2主面は、前記トレンチに近づくにつれて、前記半導体基板の前記厚み方向での前記第2領域の長さが大きくなるように傾斜しているテーパ面を含む、請求項1又は請求項2に記載の半導体光検出装置。 - 前記絶縁膜は、前記トレンチの側面に接していると共に前記第1部分を覆っている部分を有し、
前記第2部分を覆っている前記部分と前記第1部分を覆っている前記部分とが、一体に形成されている、請求項1~請求項3の何れか一項に記載の半導体光検出装置。 - 前記半導体基板を保持する保持部材と、前記保持部材と前記第2主面とを接着している接着層と、をさらに備え、
前記第2部分と前記絶縁膜のうちの前記第2部分を覆っている前記部分とは、前記接着層内に位置している、請求項1~請求項4の何れか一項に記載の半導体光検出装置。 - 前記複数のセルは、M行N列(M及びNは、2以上の整数)に2次元配列されており、
前記第1配線は、行方向に並ぶN個の前記セルをそれぞれ含むM個の第1セル群ごとに対応して設けられている複数の第1分岐配線を含み、
前記第2配線は、列方向に並ぶM個の前記セルをそれぞれ含むN個の第2セル群ごとに対応して設けられている複数の第2分岐配線を含み、
各前記第1分岐配線は、M個の前記第1セル群のうち対応する第1セル群に含まれるN個の前記セルに電気的に接続されており、
各前記第2分岐配線は、N個の前記第2セル群のうち対応する第2セル群に含まれるM個の前記セルに電気的に接続されている、請求項1~請求項5の何れか一項に記載の半導体光検出装置。 - 前記複数のセルは、M行N列(M及びNは、2以上の整数)に2次元配列されており、
前記第1配線は、複数の第1分岐配線を含み、
前記第2配線は、複数の第2分岐配線を含み、
前記複数の第1分岐配線のそれぞれと前記複数の第2分岐配線のそれぞれとは、M個の前記セルが配列されている列方向に沿って交互に設けられており、
各前記第1分岐配線は、行方向に並ぶN個の前記セルをそれぞれ含むM個の第1セル群のうち第(2×m-1)行及び第(2×m)行の第1セル群に含まれる(2×N)個の前記セルに電気的に接続されており、
各前記第2分岐配線は、M個の前記第1セル群のうち第(2×m)行及び第(2×m+1)行の第1セル群に含まれる(2×N)個の前記セルに電気的に接続されており、
mは1以上の整数である、請求項1~請求項5の何れか一項に記載の半導体光検出装置。 - 各前記第2分岐配線は、前記複数のセルのうち対応するセルに含まれる前記アバランシェフォトダイオードの前記第2半導体領域と接続されており、
前記第2分岐配線と前記第2半導体領域との接続箇所と、前記第1半導体領域との最短距離は、前記第1半導体領域と前記トレンチとの最短距離より大きい、請求項6又は請求項7に記載の半導体光検出装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19837776.4A EP3825723A4 (en) | 2018-07-18 | 2019-06-10 | SEMICONDUCTOR PHOTO-SENSING DEVICE |
US17/260,324 US20210296387A1 (en) | 2018-07-18 | 2019-06-10 | Semiconductor photodetection device |
PCT/JP2019/022950 WO2020017188A1 (ja) | 2018-07-18 | 2019-06-10 | 半導体光検出装置 |
CN201980047257.3A CN112424634A (zh) | 2018-07-18 | 2019-06-10 | 半导体光检测装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018135253 | 2018-07-18 | ||
JP2018135253 | 2018-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020021889A JP2020021889A (ja) | 2020-02-06 |
JP7178819B2 true JP7178819B2 (ja) | 2022-11-28 |
Family
ID=69163638
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018146230A Active JP7178819B2 (ja) | 2018-07-18 | 2018-08-02 | 半導体光検出装置 |
JP2020530930A Pending JPWO2020017180A1 (ja) | 2018-07-18 | 2019-06-06 | 光検出装置、半導体光検出素子、及び半導体光検出素子の駆動方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020530930A Pending JPWO2020017180A1 (ja) | 2018-07-18 | 2019-06-06 | 光検出装置、半導体光検出素子、及び半導体光検出素子の駆動方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20210344864A1 (ja) |
EP (1) | EP3825723A4 (ja) |
JP (2) | JP7178819B2 (ja) |
CN (2) | CN112424633A (ja) |
DE (1) | DE112019003597T5 (ja) |
TW (1) | TW202021147A (ja) |
WO (2) | WO2020017180A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110167041B (zh) | 2018-02-11 | 2020-09-01 | 维沃移动通信有限公司 | 波束失败恢复请求发送方法及用户设备 |
JP7362352B2 (ja) | 2019-08-23 | 2023-10-17 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
EP3907524A1 (en) * | 2020-05-07 | 2021-11-10 | ams Sensors Singapore Pte. Ltd. | A lidar sensor for light detection and ranging, lidar module, lidar enabled device and method of operating a lidar sensor for light detection and ranging |
JP7277791B2 (ja) * | 2020-08-31 | 2023-05-19 | 日亜化学工業株式会社 | 発光装置および面状光源 |
JP2022147766A (ja) * | 2021-03-23 | 2022-10-06 | 株式会社東芝 | 光検出器 |
WO2023132004A1 (ja) * | 2022-01-05 | 2023-07-13 | キヤノン株式会社 | 光電変換装置 |
WO2023157497A1 (ja) * | 2022-02-17 | 2023-08-24 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置およびその製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311651A (ja) | 2007-06-15 | 2008-12-25 | General Electric Co <Ge> | 半導体光電子増倍器の構造 |
JP2015084392A (ja) | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
JP2015179087A (ja) | 2015-04-30 | 2015-10-08 | 株式会社東芝 | 放射線検出装置およびct装置 |
WO2017059777A1 (zh) | 2015-10-10 | 2017-04-13 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片的封装方法以及封装结构 |
JP2017520134A (ja) | 2014-04-07 | 2017-07-20 | サムスン エレクトロニクス カンパニー リミテッド | 光学的イベントを感知する方法とそのための光学的イベントセンサ、及び距離測定モバイル装置 |
WO2017180277A1 (en) | 2016-04-15 | 2017-10-19 | Qualcomm Incorporated | Active area selection for lidar receivers |
US20180090536A1 (en) | 2016-09-23 | 2018-03-29 | Apple Inc. | Stacked Backside Illuminated SPAD Array |
JP2018088488A (ja) | 2016-11-29 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170143B2 (en) * | 2003-10-20 | 2007-01-30 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation apparatus |
JP4841834B2 (ja) | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | ホトダイオードアレイ |
JP2007273934A (ja) * | 2006-03-06 | 2007-10-18 | Epson Imaging Devices Corp | 受光装置、電気光学装置及び電子機器 |
JP2007279017A (ja) * | 2006-03-15 | 2007-10-25 | Omron Corp | レーダ装置 |
JP2008020203A (ja) * | 2006-07-10 | 2008-01-31 | Omron Corp | レーダ装置 |
JP5085122B2 (ja) * | 2006-12-21 | 2012-11-28 | 浜松ホトニクス株式会社 | 半導体光検出素子及び放射線検出装置 |
JP5617159B2 (ja) * | 2008-10-07 | 2014-11-05 | トヨタ自動車株式会社 | 画像取得装置及び方法 |
CN201741697U (zh) * | 2009-09-28 | 2011-02-09 | 卡尔斯特里姆保健公司 | 数字射线摄影光检测阵列 |
JP5500007B2 (ja) * | 2010-09-03 | 2014-05-21 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
JP5644294B2 (ja) * | 2010-09-10 | 2014-12-24 | 株式会社豊田中央研究所 | 光検出器 |
JP5711925B2 (ja) * | 2010-09-22 | 2015-05-07 | 日本信号株式会社 | 光測距装置 |
JP6236758B2 (ja) * | 2012-10-09 | 2017-11-29 | 株式会社豊田中央研究所 | 光学的測距装置 |
JP5925711B2 (ja) * | 2013-02-20 | 2016-05-25 | 浜松ホトニクス株式会社 | 検出器、pet装置及びx線ct装置 |
JP6045963B2 (ja) * | 2013-04-05 | 2016-12-14 | 日立マクセル株式会社 | 光測距装置 |
JP6314418B2 (ja) * | 2013-10-18 | 2018-04-25 | 株式会社デンソー | レーダ装置 |
CN109061874B (zh) * | 2014-04-28 | 2021-05-18 | 株式会社尼康 | 图案描绘装置、图案描绘方法及器件制造方法 |
JP6570844B2 (ja) * | 2015-02-26 | 2019-09-04 | 株式会社東芝 | 光検出器、その製造方法、放射線検出器、および放射線検出装置 |
JP6381477B2 (ja) * | 2015-04-13 | 2018-08-29 | 浜松ホトニクス株式会社 | 光検出装置 |
JP6609980B2 (ja) * | 2015-04-30 | 2019-11-27 | 株式会社デンソー | 光飛行時間測定装置及び光学的測距装置 |
CN205050839U (zh) * | 2015-10-10 | 2016-02-24 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片封装结构 |
JP2017075906A (ja) * | 2015-10-16 | 2017-04-20 | 浜松ホトニクス株式会社 | 測距装置 |
FR3042913B1 (fr) * | 2015-10-22 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode micro-electronique a surface active optimisee |
US10658415B2 (en) * | 2016-07-27 | 2020-05-19 | Hamamatsu Photonics K.K. | Light detection device |
US9864074B1 (en) * | 2017-05-15 | 2018-01-09 | David Edward Newman | Directional particle detector with shield and scintillators |
JP2019087659A (ja) * | 2017-11-08 | 2019-06-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子およびその製造方法、並びに電子機器 |
-
2018
- 2018-08-02 JP JP2018146230A patent/JP7178819B2/ja active Active
-
2019
- 2019-06-06 US US17/258,947 patent/US20210344864A1/en active Pending
- 2019-06-06 JP JP2020530930A patent/JPWO2020017180A1/ja active Pending
- 2019-06-06 WO PCT/JP2019/022609 patent/WO2020017180A1/ja active Application Filing
- 2019-06-06 DE DE112019003597.5T patent/DE112019003597T5/de active Pending
- 2019-06-06 CN CN201980047434.8A patent/CN112424633A/zh active Pending
- 2019-06-10 WO PCT/JP2019/022950 patent/WO2020017188A1/ja active Application Filing
- 2019-06-10 US US17/260,324 patent/US20210296387A1/en active Pending
- 2019-06-10 CN CN201980047257.3A patent/CN112424634A/zh active Pending
- 2019-06-10 EP EP19837776.4A patent/EP3825723A4/en active Pending
- 2019-07-12 TW TW108124608A patent/TW202021147A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311651A (ja) | 2007-06-15 | 2008-12-25 | General Electric Co <Ge> | 半導体光電子増倍器の構造 |
JP2015084392A (ja) | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
JP2017520134A (ja) | 2014-04-07 | 2017-07-20 | サムスン エレクトロニクス カンパニー リミテッド | 光学的イベントを感知する方法とそのための光学的イベントセンサ、及び距離測定モバイル装置 |
JP2015179087A (ja) | 2015-04-30 | 2015-10-08 | 株式会社東芝 | 放射線検出装置およびct装置 |
WO2017059777A1 (zh) | 2015-10-10 | 2017-04-13 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片的封装方法以及封装结构 |
WO2017180277A1 (en) | 2016-04-15 | 2017-10-19 | Qualcomm Incorporated | Active area selection for lidar receivers |
US20180090536A1 (en) | 2016-09-23 | 2018-03-29 | Apple Inc. | Stacked Backside Illuminated SPAD Array |
JP2018088488A (ja) | 2016-11-29 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
Also Published As
Publication number | Publication date |
---|---|
EP3825723A1 (en) | 2021-05-26 |
WO2020017180A9 (ja) | 2021-02-11 |
TW202021147A (zh) | 2020-06-01 |
US20210296387A1 (en) | 2021-09-23 |
US20210344864A1 (en) | 2021-11-04 |
CN112424633A (zh) | 2021-02-26 |
JPWO2020017180A1 (ja) | 2021-08-05 |
EP3825723A4 (en) | 2022-04-20 |
WO2020017180A1 (ja) | 2020-01-23 |
CN112424634A (zh) | 2021-02-26 |
DE112019003597T5 (de) | 2021-04-01 |
JP2020021889A (ja) | 2020-02-06 |
WO2020017188A1 (ja) | 2020-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7178819B2 (ja) | 半導体光検出装置 | |
JP5791461B2 (ja) | 光検出装置 | |
JP5405512B2 (ja) | 半導体光検出素子及び放射線検出装置 | |
TWI614882B (zh) | 光檢測裝置 | |
EP2040308B1 (en) | Photodiode array | |
JP6282368B2 (ja) | 光検出装置 | |
WO2001075977A1 (fr) | Detecteur d'energie a semi-conducteur | |
TW201635503A (zh) | 光檢測裝置 | |
JP7454917B2 (ja) | 光検出装置 | |
WO2018088480A1 (ja) | 光検出装置 | |
JP4522531B2 (ja) | 半導体エネルギー検出素子 | |
WO2020121851A1 (ja) | 光検出装置 | |
JP7098559B2 (ja) | 光検出器及びライダー装置 | |
JP4571267B2 (ja) | 放射線検出器 | |
JP5911629B2 (ja) | 光検出装置 | |
WO2021246146A1 (ja) | 半導体光検出素子 | |
JP4335104B2 (ja) | ホトダイオードアレイおよび分光器 | |
WO2022044556A1 (ja) | 光検出装置 | |
JP6244403B2 (ja) | 半導体光検出素子 | |
JP6282307B2 (ja) | 半導体光検出素子 | |
JP6116728B2 (ja) | 半導体光検出素子 | |
JP5989872B2 (ja) | 光検出装置の接続構造 | |
JP2006339360A (ja) | エネルギー線検出素子 | |
JP2021106196A (ja) | 半導体光検出素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210705 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220607 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221003 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221025 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7178819 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |