JP7098559B2 - 光検出器及びライダー装置 - Google Patents
光検出器及びライダー装置 Download PDFInfo
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- JP7098559B2 JP7098559B2 JP2019047376A JP2019047376A JP7098559B2 JP 7098559 B2 JP7098559 B2 JP 7098559B2 JP 2019047376 A JP2019047376 A JP 2019047376A JP 2019047376 A JP2019047376 A JP 2019047376A JP 7098559 B2 JP7098559 B2 JP 7098559B2
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- 239000004065 semiconductor Substances 0.000 claims description 100
- 238000010791 quenching Methods 0.000 claims description 55
- 229910021389 graphene Inorganic materials 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 176
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- 238000001514 detection method Methods 0.000 description 10
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- 238000004544 sputter deposition Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
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- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- IOCNGIQAXDXGOL-UHFFFAOYSA-N andrangine Natural products N1C2=CC=CC=C2C2C1(C13)CCC1(CC)C1OC1CN3CC2 IOCNGIQAXDXGOL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/22—Resistors with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Description
図1は、本実施形態に係る光検出器10の斜視図である。光検出器10は、例えばライダー装置などに用いられる正方形、長方形、六角形、円形、その他、各種形状の板状の光検出器である。光検出器10は、半導体基板21,半導体層22、絶縁層25、及び共通電極29を有している。また、光検出器10には、複数の光検出部20が規定されている。本実施形態では、一例として16個の光検出部20が、4行4列のマトリクス状に規定されている。各光検出部20は、光検出部相互間で干渉が生じないように、電気的・光学的に分離されている。光検出素子相互間の分離は、例えば、隣接する光検出部20の間にトレンチ構造を設けたり、隣接する光検出部20の間のシリコン層の不純物の種類や濃度を周辺と変える事で実現される。また、光検出器10を、選択酸化素子分離構造(LOCOS :Local Oxidation of Silicon)とすることでも実現される。
23は、半導体層22へ例えばボロン(B)などの不純物を注入することにより、半導体層22の一部に形成された半導体層である。
また、上記実施形態では、半導体基板21がP+型、半導体層22がP-型、半導体層23がP+型、半導体層24がN+型で構成されている場合について説明した。これに限らず、半導体基板21がN+型、半導体層22がN-型、半導体層23がN+型、半導体層24がP+型で構成されていてもよい。また、半導体基板21がP+型、半導体層22がN-型、半導体層23がP+型、半導体層24がN+型で構成されており、なおかつ、半導体層23が半導体基板21に接して位置しており、半導体層23と半導体層24の間に半導体層22が位置する構成でもよい。また、半導体基板21がN+型、半導体層22がP-型、半導体層23がN+型、半導体層24がP+型で構成されており、なおかつ、半導体層23が半導体基板21に接して位置しており、半導体層23と半導体層24の間に半導体層22が位置する構成でもよい。
次に、第2の実施形態を図面に基づいて説明する。第1の実施形態と同一又は同等の構成については、同等の符号を用いるとともに、その説明を省略又は簡略する。図11は、本実施形態に係る光検出器10Aの斜視図である。光検出器10Aは、絶縁層25及び半導体層22の間に、絶縁層30と電極層31を有し、上面に制御配線32が配線されている点で、第1の実施形態に係る光検出器10と相違する。
20,20A 光検出部
21 半導体基板
22~24 半導体層
25 絶縁層
25a 貫通口
25b 開口部
26 共通配線
27 コンタクト電極
28 クエンチ抵抗
29 共通電極
30 絶縁層
30a 貫通口
31 電極層
31a 開口
32 制御配線
100 ライダー装置
110 インタフェース
120 制御装置
280 グラフェン層
Claims (6)
- 光検出部を備える光検出器であって、
第1の導電型の第1半導体層と、前記第1半導体層とPN接合し、前記第1の導電型と異なる第2の導電型の第2半導体層と、を有する光検出部と、
前記第2半導体層の一側に積層され、単原子層又は二次元半導体層からなる、光透過性を有するグラフェン層からなり、一端が前記第2半導体層に接続されるクエンチ抵抗と、
を備え、
前記クエンチ抵抗の一側に、絶縁層を介して設けられ、前記クエンチ抵抗を流れる電流を制御する電極層を備える光検出器。 - 前記クエンチ抵抗の他側に、絶縁層を介して設けられ、前記クエンチ抵抗を流れる電流を制御する電極層を備える請求項1に記載の光検出器。
- 前記電極層は、光透過性を有する請求項1又は2に記載の光検出器。
- 複数の前記光検出部を備え、
前記光検出器それぞれの前記電極層に接続される制御配線を備える請求項1乃至3のいずれか一項に記載の光検出器。 - 複数の前記光検出部を備え、
前記光検出部それぞれの前記クエンチ抵抗の他端に接続される共通配線を備える請求項1乃至4のいずれか一項に記載の光検出器。 - 対象物に光を照射する光源と、
前記光の反射光を受光する請求項1乃至5のいずれか一項に記載の光検出器と、
を備えるライダー装置。
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US16/553,221 US11329184B2 (en) | 2019-03-14 | 2019-08-28 | Photodetector and lidar device comprising a detector having a PN junction connected to an optically transmissive quench resistor |
EP19194054.3A EP3709372A1 (en) | 2019-03-14 | 2019-08-28 | Photodetector and lidar device |
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JP7466493B2 (ja) * | 2021-04-28 | 2024-04-12 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び移動体 |
JP7514215B2 (ja) | 2021-09-10 | 2024-07-10 | 株式会社東芝 | 検査方法、半導体装置の製造方法、検査装置、検査システム、プログラム、及び記憶媒体 |
WO2023157497A1 (ja) * | 2022-02-17 | 2023-08-24 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置およびその製造方法 |
KR20240028106A (ko) * | 2022-08-24 | 2024-03-05 | 주식회사 트루픽셀 | 단일 광자 검출 소자, 전자 장치, 및 라이다 장치 |
KR102668639B1 (ko) * | 2022-10-07 | 2024-05-23 | 주식회사 트루픽셀 | 아발란치 광검출 소자, 전자 장치, 및 라이다 장치 |
Citations (7)
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JP2010536186A (ja) | 2007-08-10 | 2010-11-25 | センスル・テクノロジーズ・リミテッド | シリコンフォトマルチプライヤ回路に関連する方法及び装置 |
JP2014082420A (ja) | 2012-10-18 | 2014-05-08 | Hamamatsu Photonics Kk | フォトダイオードアレイ |
JP2015084392A (ja) | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
WO2015059663A1 (en) | 2013-10-25 | 2015-04-30 | Fondazione Bruno Kessler | Improved solid-state photomultiplier device and method for controlling said photomultiplier device |
JP2016219805A (ja) | 2015-05-18 | 2016-12-22 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 二次元物質を含む半導体素子及びその製造方法 |
JP2017075906A (ja) | 2015-10-16 | 2017-04-20 | 浜松ホトニクス株式会社 | 測距装置 |
JP2017117836A (ja) | 2015-12-21 | 2017-06-29 | 浜松ホトニクス株式会社 | 光電変換素子及び光電変換モジュール |
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JP2014082420A (ja) | 2012-10-18 | 2014-05-08 | Hamamatsu Photonics Kk | フォトダイオードアレイ |
JP2015084392A (ja) | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
WO2015059663A1 (en) | 2013-10-25 | 2015-04-30 | Fondazione Bruno Kessler | Improved solid-state photomultiplier device and method for controlling said photomultiplier device |
JP2016219805A (ja) | 2015-05-18 | 2016-12-22 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 二次元物質を含む半導体素子及びその製造方法 |
JP2017075906A (ja) | 2015-10-16 | 2017-04-20 | 浜松ホトニクス株式会社 | 測距装置 |
JP2017117836A (ja) | 2015-12-21 | 2017-06-29 | 浜松ホトニクス株式会社 | 光電変換素子及び光電変換モジュール |
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US11329184B2 (en) | 2022-05-10 |
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