JP2016219805A - 二次元物質を含む半導体素子及びその製造方法 - Google Patents
二次元物質を含む半導体素子及びその製造方法 Download PDFInfo
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- JP2016219805A JP2016219805A JP2016099346A JP2016099346A JP2016219805A JP 2016219805 A JP2016219805 A JP 2016219805A JP 2016099346 A JP2016099346 A JP 2016099346A JP 2016099346 A JP2016099346 A JP 2016099346A JP 2016219805 A JP2016219805 A JP 2016219805A
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- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
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Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1016—Devices sensitive to infrared, visible or ultraviolet radiation comprising transparent or semitransparent devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
110 絶縁層
120,127,E10−E19 第1電極
120a,127a ドーピングされた第1電極
130,137,S10,S12−S19 半導体層
140,147,E20−E29 第2電極
140a,147a ドーピングされた2電極
150,CE10,CE12−CE19 第1コンタクト電極
160,CE20,CE22−CE29 第2コンタクト電極
d1,d10,d11 第1ドーピング領域
d2,d20,d22 第2ドーピング領域
G50 ゲート電極
GI50 ゲート絶縁層
QDL1 量子ドット層
Claims (37)
- 第1電極と、
前記第1電極と離隔された第2電極と、
前記第1電極及び第2電極間に具備された半導体活性層と、を含み、
前記第1電極及び第2電極のうち少なくとも一つは、ドーピングされたグラフェンを具備し、
前記半導体活性層は、0.1eV以上の内部電位を有する光電子素子。 - 前記第1電極及び第2電極のうち一つは、p型ドーパントでドーピングされたグラフェンを含み、
前記第1電極及び第2電極のうち他の一つは、n型ドーパントでドーピングされたグラフェンを含むことを特徴とする請求項1に記載の光電子素子。 - 前記第1電極及び第2電極のうち一つは、p型ドーパントまたはn型ドーパントでドーピングされたグラフェンを含み、
前記第1電極及び第2電極のうち他の一つは、金属性物質を含むことを特徴とする請求項1に記載の光電子素子。 - 前記ドーピングされたグラフェンと、前記金属性物質との仕事関数差は、0.1〜5eVであることを特徴とする請求項3に記載の光電子素子。
- 前記半導体活性層の内部電界は、0.3〜100MV/cmであることを特徴とする請求項1から4の何れか1項に記載の光電子素子。
- 前記半導体活性層は、前記第1電極に隣接した第1領域、及び前記第2電極に隣接した第2領域を含み、
前記第1領域及び第2領域のうち少なくとも一つは、ドーピングされた領域であることを特徴とする請求項1から5の何れか1項に記載の光電子素子。 - 前記第1電極が第1タイプのドーパントでドーピングされた場合、前記半導体活性層の前記第1領域は、前記第1タイプと同一タイプのドーパントでドーピングされ、かつ/または、
前記第2電極が第2タイプのドーパントでドーピングされた場合、前記半導体活性層の前記第2領域は、前記第2タイプと同一タイプのドーパントでドーピングされたことを特徴とする請求項6に記載の光電子素子。 - 前記半導体活性層の前記第1領域及び第2領域は、相互離隔されるか、あるいは相互接触したことを特徴とする請求項6または7に記載の光電子素子。
- 前記半導体活性層は、二次元形状の結晶構造を有する二次元半導体を含むことを特徴とする請求項1から8の何れか1項に記載の光電子素子。
- 前記二次元半導体は、金属カルコゲナイド系物質を含み、
前記金属カルコゲナイド系物質は、Mo、W、Nb、V、Ta、Ti、Zr、Hf、Tc、Re、Cu、Ga、In、Sn、Ge、Pbのうち1つの金属元素と、S、Se、Teのうち1つのカルコゲン元素とを含むことを特徴とする請求項9に記載の光電子素子。 - 前記半導体活性層は、量子ドットを含むことを特徴とする請求項1から10の何れか1項に記載の光電子素子。
- 前記第1電極、前記第2電極及び前記半導体活性層のうち少なくとも一つは、二次元物質を含むことを特徴とする請求項1から11の何れか1項に記載の光電子素子。
- 前記半導体活性層の内部電位は、5eV以下であることを特徴とする請求項1から12の何れか1項に記載の光電子素子。
- 前記光電子素子は、光検出器または光電素子であることを特徴とする請求項1から13の何れか1項に記載の光電子素子。
- 前記光検出器は、自家発電型光検出器であることを特徴とする請求項14に記載の光電子素子。
- 前記第1電極に接触した第1コンタクト電極と、
前記第2電極に接触した第2コンタクト電極と、をさらに含むことを特徴とする請求項1から15の何れか1項に記載の光電子素子。 - 前記第1コンタクト電極及び前記第2コンタクト電極は、水平方向に相互離隔されたことを特徴とする請求項16に記載の光電子素子。
- 前記第1コンタクト電極及び前記第2コンタクト電極は、垂直方向に相互離隔されたことを特徴とする請求項16に記載の光電子素子。
- 前記第1電極は、前記半導体活性層に対して第1方向に延長され、
前記第2電極は、前記半導体活性層に対して、前記第1方向と反対方向である第2方向に延長されたことを特徴とする請求項1から18の何れか1項に記載の光電子素子。 - 前記第1電極は、前記半導体活性層に対して第1方向に延長され、
前記第2電極は、前記半導体活性層に対して、前記第1方向と垂直の第2方向に延長されたことを特徴とする請求項1から18の何れか1項に記載の光電子素子。 - 前記第1電極、前記第2電極及び前記半導体活性層は、1つの単位セルを構成し、
前記光電子素子は、複数の前記単位セルを含み、
前記複数の単位セルの第1端部にそれぞれ連結された複数の第1コンタクト電極、及び前記複数の単位セルの第2端部に共通して連結された第2コンタクト電極をさらに含むことを特徴とする請求項1から20の何れか1項に記載の光電子素子。 - 第1電極と、
前記第1電極と離隔された第2電極と、
前記第1電極及び第2電極間に具備され、二次元半導体及び量子ドットのうち少なくとも一つを含む半導体活性層と、を具備し、
前記半導体活性層は、前記第1電極及び第2電極間に、0.1eV以上の内部電位を有する光電子素子。 - 前記第1電極及び第2電極のうち少なくとも一つは、ドーピングされたグラフェンを含むことを特徴とする請求項22に記載の光電子素子。
- 前記第1電極及び第2電極のうち一つは、p型ドーパントでドーピングされたグラフェンを含み、
前記第1電極及び第2電極のうち他の一つは、n型ドーパントでドーピングされたグラフェンを含むことを特徴とする請求項23に記載の光電子素子。 - 前記第1電極及び第2電極のうち一つは、p型ドーパントまたはn型ドーパントでドーピングされたグラフェンを含み、
前記第1電極及び第2電極のうち他の一つは、金属性物質を含むことを特徴とする請求項23に記載の光電子素子。 - 前記半導体活性層は、前記第1電極に隣接した第1領域、及び前記第2電極に隣接した第2領域を含み、
前記第1領域及び第2領域のうち少なくとも一つは、ドーピングされた領域であることを特徴とする請求項22から25の何れか1項に記載の光電子素子。 - 前記第1電極が第1タイプのドーパントでドーピングされた場合、前記半導体活性層の前記第1領域は、前記第1タイプと同一タイプのドーパントでドーピングされ、かつ/または、
前記第2電極が第2タイプのドーパントでドーピングされた場合、前記半導体活性層の前記第2領域は、前記第2タイプと同一タイプのドーパントでドーピングされたことを特徴とする請求項26に記載の光電子素子。 - 前記二次元半導体は、金属カルコゲナイド系物質を含み、
前記金属カルコゲナイド系物質は、Mo、W、Nb、V、Ta、Ti、Zr、Hf、Tc、Re、Cu、Ga、In、Sn、Ge、Pbのうち1つの金属元素と、S、Se、Teのうち1つのカルコゲン元素とを含むことを特徴とする請求項22から27の何れか1項に記載の光電子素子。 - ソース電極と、
前記ソース電極と離隔されたドレイン電極と、
前記ソース電極とドレイン電極との間に具備された半導体層と、
前記半導体層に電界を印加するためのゲート電極と、を含み、
前記ソース電極及びドレイン電極のうち少なくとも一つは、ドーピングされたグラフェンを具備し、前記半導体層は、0.1eV以上の内部電位を有するトランジスタ。 - 前記ソース電極及びドレイン電極のうち一つは、p型ドーパントでドーピングされたグラフェンを含み、
前記ソース電極及びドレイン電極のうち他の一つは、n型ドーパントでドーピングされたグラフェンを含むことを特徴とする請求項29に記載のトランジスタ。 - 前記ソース電極及びドレイン電極のうち一つは、前記ドーピングされたグラフェンを含み、
前記ソース電極及びドレイン電極のうち他の一つは、金属性物質を含むことを特徴とする請求項29に記載のトランジスタ。 - 前記ドーピングされたグラフェンと、前記金属性物質との仕事関数差は、0.1〜5eVであることを特徴とする請求項31に記載のトランジスタ。
- 前記半導体層の内部電界は、0.3〜100MV/cmであることを特徴とする請求項29から32の何れか1項に記載のトランジスタ。
- 前記半導体層は、前記ソース電極に隣接した第1領域、及び前記ドレイン電極に隣接した第2領域を含み、
前記第1領域及び第2領域のうち少なくとも一つは、ドーピングされた領域であることを特徴とする請求項29から33の何れか1項に記載のトランジスタ。 - 前記ソース電極が第1タイプのドーパントでドーピングされた場合、前記半導体層の前記第1領域は、前記第1タイプと同一タイプのドーパントでドーピングされ、かつ/または、
前記ドレイン電極が第2タイプのドーパントでドーピングされた場合、前記半導体層の前記第2領域は、前記第2タイプと同一タイプのドーパントでドーピングされたことを特徴とする請求項34に記載のトランジスタ。 - 前記半導体層は、二次元半導体及び量子ドットのうち少なくとも一つを含むことを特徴とする請求項29から35の何れか1項に記載のトランジスタ。
- 前記半導体層は、トンネリング層であり、
前記トランジスタは、トンネリングトランジスタであることを特徴とする請求項29から36の何れか1項に記載のトランジスタ。
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