JP4841834B2 - ホトダイオードアレイ - Google Patents
ホトダイオードアレイ Download PDFInfo
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- JP4841834B2 JP4841834B2 JP2004374062A JP2004374062A JP4841834B2 JP 4841834 B2 JP4841834 B2 JP 4841834B2 JP 2004374062 A JP2004374062 A JP 2004374062A JP 2004374062 A JP2004374062 A JP 2004374062A JP 4841834 B2 JP4841834 B2 JP 4841834B2
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- photodiode array
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- 239000004065 semiconductor Substances 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 86
- 238000009825 accumulation Methods 0.000 claims description 39
- 238000000926 separation method Methods 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
P. Buzhan, et al.,「An Advanced Study of Silicon Photomultiplier」[online],ICFA Instrumentation BULLETIN Fall 2001 Issue,、[平成16年11月4日検索],〈URL: http://www.slac.stanford.edu/pubs/icfa/〉 P. Buzhan, et al.,「Silicon Photomultiplier And Its Possible applications」,Nuclear Instruments and Methods in Physics Research A 504(2003) 48-52
図1は、本発明の第1実施形態に係るホトダイオードアレイ1を被検出光の入射面側から見た図であり、図2はホトダイオードアレイ1を入射面の反対側から見た図である。
第2実施形態に係るホトダイオードアレイ20は、図8に示すように、各アバランシェ増倍部6を構成するn+型半導体層62Aが各受光チャンネル10の全面に渡って形成され、周囲の分離部5と接触している点で、n+型半導体層62が各受光チャンネル10の中央にのみ形成されている第1実施形態と異なる。
第3実施形態に係るホトダイオードアレイ22は、図11に示すように、各アバランシェ増倍部6を構成するp型半導体層61A及びn+型半導体層62Aの双方が各受光チャンネル10の全面に渡って形成され、周囲の分離部5に接触している点で、p型半導体層61及びn+型半導体層62が各受光チャンネル10の中央にのみ形成されている第1実施形態と異なる。
Claims (4)
- 被検出光を入射させる複数の受光チャンネルが半導体基板に形成されてなるホトダイオードアレイであって、
前記半導体基板における前記被検出光の入射面側には、
前記半導体基板よりも高い不純物濃度を有するアキュムレーション層が形成され、
前記半導体基板における前記入射面の反対面側には、
前記被検出光の入射によって生じたキャリアをアバランシェ増倍させる増倍部と、
前記増倍部と電気的に接続されると共に、互いに並列接続される抵抗と、が前記受光チャンネルごとに形成され、
前記受光チャンネル同士は、トレンチ溝によって前記各増倍部の周囲に形成される分離部によって互いに分離され、
前記アキュムレーション層は、前記受光チャンネルごとに形成され、
前記各アキュムレーション層は、前記半導体基板の前記入射面側に形成された透明電極層によって互いに電気的に接続されていることを特徴とするホトダイオードアレイ。 - 前記トレンチ溝内には、前記半導体基板よりも低い屈折率を有する低屈折率物質が形成されていることを特徴とする請求項1記載のホトダイオードアレイ。
- 前記低屈折率物質は、SiO2により形成されていることを特徴とする請求項2記載のホトダイオードアレイ。
- 前記トレンチ溝及び前記低屈折率物質は、前記半導体基板の前記入射面側から前記反対面側まで貫通して形成されていることを特徴とする請求項3記載のホトダイオードアレイ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374062A JP4841834B2 (ja) | 2004-12-24 | 2004-12-24 | ホトダイオードアレイ |
EP19201786.1A EP3627555A1 (en) | 2004-12-24 | 2005-12-21 | Photodiode array |
EP05820225.0A EP1840967B1 (en) | 2004-12-24 | 2005-12-21 | Photodiode array |
PCT/JP2005/023503 WO2006068184A1 (ja) | 2004-12-24 | 2005-12-21 | ホトダイオードアレイ |
US11/793,651 US20090121306A1 (en) | 2004-12-24 | 2005-12-21 | Photodiode Array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374062A JP4841834B2 (ja) | 2004-12-24 | 2004-12-24 | ホトダイオードアレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006179828A JP2006179828A (ja) | 2006-07-06 |
JP4841834B2 true JP4841834B2 (ja) | 2011-12-21 |
Family
ID=36601781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004374062A Active JP4841834B2 (ja) | 2004-12-24 | 2004-12-24 | ホトダイオードアレイ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090121306A1 (ja) |
EP (2) | EP3627555A1 (ja) |
JP (1) | JP4841834B2 (ja) |
WO (1) | WO2006068184A1 (ja) |
Families Citing this family (62)
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RU2290721C2 (ru) | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
US7916362B2 (en) | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
US8188563B2 (en) * | 2006-07-21 | 2012-05-29 | The Regents Of The University Of California | Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector |
US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
JP2008103614A (ja) * | 2006-10-20 | 2008-05-01 | Mitsui Eng & Shipbuild Co Ltd | 光電変換デバイス |
US7652257B2 (en) * | 2007-06-15 | 2010-01-26 | General Electric Company | Structure of a solid state photomultiplier |
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JP4767396B2 (ja) * | 2000-07-31 | 2011-09-07 | 浜松ホトニクス株式会社 | アバランシェホトダイオードのバイアス回路 |
JP4482253B2 (ja) * | 2001-09-12 | 2010-06-16 | 浜松ホトニクス株式会社 | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP4342142B2 (ja) * | 2002-03-22 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体受光素子 |
AU2003235925A1 (en) * | 2002-05-10 | 2003-11-11 | Hamamatsu Photonics K.K. | Rear surface irradiation photodiode array and method for producing the same |
US6933489B2 (en) * | 2002-05-10 | 2005-08-23 | Hamamatsu Photonics K.K. | Back illuminated photodiode array and method of manufacturing the same |
AU2003254876A1 (en) * | 2002-08-09 | 2004-03-11 | Hamamatsu Photonics K.K. | Photodiode array, production method therefor, and radiation detector |
US7810740B2 (en) * | 2002-11-18 | 2010-10-12 | Hamamatsu Photonics K.K. | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
WO2004100200A2 (en) * | 2003-05-01 | 2004-11-18 | Yale University | Solid state microchannel plate photodetector |
-
2004
- 2004-12-24 JP JP2004374062A patent/JP4841834B2/ja active Active
-
2005
- 2005-12-21 WO PCT/JP2005/023503 patent/WO2006068184A1/ja active Application Filing
- 2005-12-21 EP EP19201786.1A patent/EP3627555A1/en active Pending
- 2005-12-21 US US11/793,651 patent/US20090121306A1/en not_active Abandoned
- 2005-12-21 EP EP05820225.0A patent/EP1840967B1/en active Active
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EP1840967B1 (en) | 2019-11-13 |
US20090121306A1 (en) | 2009-05-14 |
EP1840967A1 (en) | 2007-10-03 |
EP1840967A4 (en) | 2010-12-01 |
EP3627555A1 (en) | 2020-03-25 |
JP2006179828A (ja) | 2006-07-06 |
WO2006068184A1 (ja) | 2006-06-29 |
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