AU2003235925A1 - Rear surface irradiation photodiode array and method for producing the same - Google Patents
Rear surface irradiation photodiode array and method for producing the sameInfo
- Publication number
- AU2003235925A1 AU2003235925A1 AU2003235925A AU2003235925A AU2003235925A1 AU 2003235925 A1 AU2003235925 A1 AU 2003235925A1 AU 2003235925 A AU2003235925 A AU 2003235925A AU 2003235925 A AU2003235925 A AU 2003235925A AU 2003235925 A1 AU2003235925 A1 AU 2003235925A1
- Authority
- AU
- Australia
- Prior art keywords
- producing
- same
- rear surface
- photodiode array
- surface irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002-136206 | 2002-05-10 | ||
| JP2002136206 | 2002-05-10 | ||
| PCT/JP2003/005852 WO2003096427A1 (en) | 2002-05-10 | 2003-05-09 | Rear surface irradiation photodiode array and method for producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2003235925A1 true AU2003235925A1 (en) | 2003-11-11 |
Family
ID=29416780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2003235925A Abandoned AU2003235925A1 (en) | 2002-05-10 | 2003-05-09 | Rear surface irradiation photodiode array and method for producing the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4478012B2 (en) |
| CN (1) | CN100388503C (en) |
| AU (1) | AU2003235925A1 (en) |
| DE (1) | DE10392637B4 (en) |
| WO (1) | WO2003096427A1 (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927383B2 (en) * | 2002-07-26 | 2005-08-09 | Raytheon Company | Radiation hardened visible P-I-N detector |
| JP4331033B2 (en) * | 2004-03-29 | 2009-09-16 | 浜松ホトニクス株式会社 | Semiconductor light detecting element and manufacturing method thereof |
| JP2006073852A (en) * | 2004-09-03 | 2006-03-16 | Dainippon Printing Co Ltd | Sensor package and its manufacturing method |
| JP4841834B2 (en) * | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | Photodiode array |
| KR100718878B1 (en) * | 2005-06-28 | 2007-05-17 | (주)실리콘화일 | Separation type unit pixel of image sensor having 3 dimension structure and manufacture method thereof |
| US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
| JP5281252B2 (en) * | 2007-03-05 | 2013-09-04 | 新光電気工業株式会社 | Illuminance detection device |
| KR100872719B1 (en) * | 2007-04-17 | 2008-12-05 | 동부일렉트로닉스 주식회사 | Image Sensor and Method for Manufacturing thereof |
| JP4644696B2 (en) | 2007-05-30 | 2011-03-02 | 富士フイルム株式会社 | Back-illuminated image sensor and manufacturing method thereof |
| WO2009005098A1 (en) * | 2007-07-03 | 2009-01-08 | Hamamatsu Photonics K.K. | Back surface incident type distance measuring sensor and distance measuring device |
| JP4966897B2 (en) * | 2008-03-25 | 2012-07-04 | 株式会社フジクラ | Manufacturing method of semiconductor package |
| JP5185207B2 (en) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | Photodiode array |
| JP5185205B2 (en) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | Semiconductor photo detector |
| JP5185206B2 (en) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | Semiconductor photo detector |
| JP5185208B2 (en) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | Photodiode and photodiode array |
| JP2010283223A (en) * | 2009-06-05 | 2010-12-16 | Hamamatsu Photonics Kk | Semiconductor optical detecting element and method of manufacturing semiconductor optical detecting element |
| JP5363222B2 (en) * | 2009-07-13 | 2013-12-11 | 浜松ホトニクス株式会社 | Semiconductor light detection element and method for manufacturing semiconductor light detection element |
| JP5261304B2 (en) * | 2009-07-13 | 2013-08-14 | 浜松ホトニクス株式会社 | Semiconductor light detection element and method for manufacturing semiconductor light detection element |
| JP2010199602A (en) * | 2010-04-16 | 2010-09-09 | Sony Corp | Solid-state imaging element and manufacturing method of the same |
| JP5223883B2 (en) * | 2010-05-17 | 2013-06-26 | ソニー株式会社 | Solid-state image sensor |
| JP5925711B2 (en) | 2013-02-20 | 2016-05-25 | 浜松ホトニクス株式会社 | Detector, PET apparatus and X-ray CT apparatus |
| JP7089930B2 (en) * | 2018-04-16 | 2022-06-23 | 浜松ホトニクス株式会社 | Semiconductor photodetector |
| JP7089931B2 (en) * | 2018-04-16 | 2022-06-23 | 浜松ホトニクス株式会社 | Manufacturing method of backside incident type semiconductor photodetection |
| JP7034816B2 (en) * | 2018-04-16 | 2022-03-14 | 浜松ホトニクス株式会社 | Backside incident type semiconductor photodetector |
| JP7148261B2 (en) * | 2018-04-16 | 2022-10-05 | 浜松ホトニクス株式会社 | Back-thinned semiconductor photodetector |
| JP7364343B2 (en) * | 2019-02-26 | 2023-10-18 | 浜松ホトニクス株式会社 | Method for manufacturing a photodetection device and photodetection device |
| FR3094141A1 (en) * | 2019-03-18 | 2020-09-25 | Commissariat à l'Energie Atomique et aux Energies Alternatives | method of manufacturing an optoelectronic component with optical transmission on the rear face |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
| JPH01205465A (en) * | 1988-02-10 | 1989-08-17 | Sony Corp | Manufacture of solid-state image sensing device |
| JPH04286160A (en) * | 1991-03-14 | 1992-10-12 | Fujitsu Ltd | Photodetector and manufacture thereof |
| JP4522531B2 (en) * | 2000-04-04 | 2010-08-11 | 浜松ホトニクス株式会社 | Semiconductor energy detector |
| JP3713418B2 (en) * | 2000-05-30 | 2005-11-09 | 光正 小柳 | Manufacturing method of three-dimensional image processing apparatus |
-
2003
- 2003-05-09 JP JP2004504299A patent/JP4478012B2/en not_active Expired - Fee Related
- 2003-05-09 AU AU2003235925A patent/AU2003235925A1/en not_active Abandoned
- 2003-05-09 WO PCT/JP2003/005852 patent/WO2003096427A1/en active Application Filing
- 2003-05-09 CN CNB038105020A patent/CN100388503C/en not_active Expired - Lifetime
- 2003-05-09 DE DE10392637.2T patent/DE10392637B4/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4478012B2 (en) | 2010-06-09 |
| CN1653617A (en) | 2005-08-10 |
| DE10392637T5 (en) | 2005-06-16 |
| WO2003096427A1 (en) | 2003-11-20 |
| DE10392637B4 (en) | 2014-09-04 |
| CN100388503C (en) | 2008-05-14 |
| JPWO2003096427A1 (en) | 2005-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase | ||
| TH | Corrigenda |
Free format text: IN VOL 18, NO 2, PAGE(S) 519 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME HAMAMATSU PHOTONICS K.K., APPLICATION NO. 2003235925, UNDER INID (43) CORRECT THE PUBLICATION DATE TO READ 24.11.2003 |