JP6874714B2 - 光検出器及び光学測距装置 - Google Patents
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- 230000006835 compression Effects 0.000 claims description 7
- 238000007906 compression Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 description 29
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 238000010791 quenching Methods 0.000 description 15
- 230000000171 quenching effect Effects 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 230000008034 disappearance Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
- H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
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Description
第1の実施の形態における光検出器100は、図1に示すように、受光部102、弁別部104及び信号処理部106を含んで構成される。図2は、光検出器100の具体的な構成例を示す。
図8は、変形例1における光検出器200の構成を示す図である。光検出器200は、受光部102、弁別部104、信号処理部106(106a,106b)に加えて、分配器108を含んで構成される。
MP構造とされたSiPM10に含まれるSPAD10a〜10nが光子に反応した場合、反応後の一定期間は光子に再度反応できない時間、すなわちデッドタイムが生ずる。そこで、本変形例では、周期的にSiPM10を構成するSPAD10a〜10nのオン状態とオフ状態とを周期的に切り替えてデッドタイムをずらすことで、光検出器100全体としてデットタイムの影響を抑制する。
Claims (12)
- 複数の受光素子を有するアレイと、
前記受光素子からの出力を加算して出力する加算回路と、
を備え、
前記アレイを構成する前記受光素子のオン状態とオフ状態とを時間的に切り替えながら得られた前記受光素子の出力信号に対して、前記アレイに含まれる前記受光素子のうち有効な受光素子の組み合わせを変更しつつ前記加算回路から出力された複数の測定結果から前記受光素子毎又は前記受光素子のグループ毎の出力信号を求める圧縮センシング処理を施すことを特徴とする光検出器。 - 請求項1に記載の光検出器であって、
前記受光素子のオン状態とオフ状態とをランダムに切り替えることを特徴とする光検出器。 - 複数の受光素子を有するアレイと、
前記受光素子からの出力を加算して出力する加算回路と、
を備え、
前記受光素子のオン状態とオフ状態との割合を一定に維持しつつ、前記受光素子のオン状態とオフ状態とを時間的に切り替え、前記アレイに含まれる前記受光素子のうち有効な受光素子の組み合わせを変更しつつ前記加算回路から出力された複数の測定結果から前記受光素子毎又は前記受光素子のグループ毎の出力信号を求める圧縮センシング処理を施すことを特徴とする光検出器。 - 複数の受光素子を有するアレイと、
前記受光素子からの出力を加算して出力する加算回路と、
を備え、
前記アレイを構成する前記受光素子のうち一部を時間的に切り替えて選択しながら得られた前記受光素子の出力信号に対して、前記アレイに含まれる前記受光素子のうち有効な受光素子の組み合わせを変更しつつ前記加算回路から出力された複数の測定結果から前記受光素子毎又は前記受光素子のグループ毎の出力信号を求める圧縮センシング処理を施すことを特徴とする光検出器。 - 請求項4に記載の光検出器であって、
前記受光素子をランダムに選択することを特徴とする光検出器。 - 請求項1〜5のいずれか1項に記載の光検出器であって、
前記アレイを構成する前記受光素子のうち一部から得られた出力信号と、それと同時に前記受光素子の残りの一部から得られた出力信号と、に対して前記圧縮センシング処理を施すことを特徴とする光検出器。 - 複数の受光素子を有するアレイと、
前記受光素子からの出力を加算して出力する加算回路と、
を備え、
受光素子数を測定回数に応じて前記受光素子のオン状態とオフ状態との割合を設定し、前記アレイに含まれる前記受光素子のうち有効な受光素子の組み合わせを変更しつつ前記加算回路から出力された複数の測定結果から前記受光素子毎又は前記受光素子のグループ毎の出力信号を求める圧縮センシング処理を施すことを特徴とする光検出器。 - 複数の受光素子を有するアレイと、
前記受光素子からの出力を加算して出力する加算回路と、
を備え、
背景光の強度に応じて前記受光素子のオン状態とオフ状態との割合を設定し、前記アレイに含まれる前記受光素子のうち有効な受光素子の組み合わせを変更しつつ前記加算回路から出力された複数の測定結果から前記受光素子毎又は前記受光素子のグループ毎の出力信号を求める圧縮センシング処理を施すことを特徴とする光検出器。 - 請求項1〜8に記載の光検出器であって、
前記受光素子は、ガイガーモードで使用されるアバランシェフォトダイオードであり、
前記アバランシェフォトダイオードの各々からの出力信号をそれぞれ矩形パルスに変換する複数の弁別回路を備え、
前記加算回路は、前記複数の弁別回路によって生成された前記矩形パルスを加算して出力することを特徴とする光検出器。 - 請求項1〜9に記載の光検出器であって、
前記加算回路からの出力を閾値処理することを特徴とする光検出器。 - 請求項1〜10のいずれか1項に記載の光検出器であって、
前記圧縮センシング処理によって前記受光素子のうち故障した素子を診断可能であることを特徴とする光検出器。 - 請求項1〜11のいずれか1項に記載の光検出器を備え、
照射光の飛行時間検出により測距を行う光学測距装置。
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US16/273,419 US10985290B2 (en) | 2018-02-22 | 2019-02-12 | Photodetector and optical distance measuring device |
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JP6730150B2 (ja) | 2016-09-16 | 2020-07-29 | 株式会社東芝 | 光検出器、及び距離測定装置 |
US11393870B2 (en) * | 2018-12-18 | 2022-07-19 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, and mobile apparatus |
US20240085177A1 (en) * | 2021-02-25 | 2024-03-14 | Sony Semiconductor Solutions Corporation | Photodetection device and photodetection system |
CN115616521A (zh) * | 2021-07-16 | 2023-01-17 | 上海禾赛科技有限公司 | 用于激光雷达的数据处理方法及激光雷达 |
CN115616596A (zh) * | 2021-07-16 | 2023-01-17 | 上海禾赛科技有限公司 | 激光雷达的测距方法、激光雷达及计算机可读存储介质 |
US20230217128A1 (en) * | 2021-12-31 | 2023-07-06 | Samsung Electronics Co., Ltd. | Flexible computational image sensor with compressive sensing capability |
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JP4841834B2 (ja) | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | ホトダイオードアレイ |
KR101616056B1 (ko) * | 2009-08-19 | 2016-04-28 | 삼성전자주식회사 | 광자 계수 장치 및 방법 |
JP5644294B2 (ja) * | 2010-09-10 | 2014-12-24 | 株式会社豊田中央研究所 | 光検出器 |
DE102011005746A1 (de) * | 2011-03-18 | 2012-09-20 | Robert Bosch Gmbh | Messvorrichtung zur mehrdimensionalen Vermessung eines Zielobjekts |
JP6017916B2 (ja) * | 2012-10-16 | 2016-11-02 | 株式会社豊田中央研究所 | 光検出器 |
US9411049B2 (en) * | 2013-01-09 | 2016-08-09 | Stmicroelectronics S.R.L. | Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions |
US9134114B2 (en) * | 2013-03-11 | 2015-09-15 | Texas Instruments Incorporated | Time of flight sensor binning |
US9874629B2 (en) * | 2013-12-23 | 2018-01-23 | Oulun Yliopisto | Distance measurement device, receiver thereof and method of distance measurement |
JP6333189B2 (ja) * | 2015-02-09 | 2018-05-30 | 三菱電機株式会社 | レーザ受信装置 |
US9933513B2 (en) * | 2016-02-18 | 2018-04-03 | Aeye, Inc. | Method and apparatus for an adaptive ladar receiver |
US20170242102A1 (en) * | 2016-02-18 | 2017-08-24 | Aeye, Inc. | Ladar System with Dichroic Photodetector for Tracking the Targeting of a Scanning Ladar Transmitter |
JP6730150B2 (ja) * | 2016-09-16 | 2020-07-29 | 株式会社東芝 | 光検出器、及び距離測定装置 |
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