JP6454373B2 - フォトダイオードアレイ - Google Patents
フォトダイオードアレイ Download PDFInfo
- Publication number
- JP6454373B2 JP6454373B2 JP2017085367A JP2017085367A JP6454373B2 JP 6454373 B2 JP6454373 B2 JP 6454373B2 JP 2017085367 A JP2017085367 A JP 2017085367A JP 2017085367 A JP2017085367 A JP 2017085367A JP 6454373 B2 JP6454373 B2 JP 6454373B2
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- semiconductor layer
- photodiode array
- light
- type semiconductor
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- 239000004065 semiconductor Substances 0.000 claims description 189
- 239000012535 impurity Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 description 67
- 239000000758 substrate Substances 0.000 description 55
- 238000000926 separation method Methods 0.000 description 41
- 239000004020 conductor Substances 0.000 description 30
- 230000001681 protective effect Effects 0.000 description 28
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 239000000969 carrier Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (2)
- ガイガーモードで動作する複数のアバランシェフォトダイオードを備えたフォトダイオードアレイであって、
前記アバランシェフォトダイオードの各々は、
第1導電型の第1の半導体層と、
前記第1の半導体層上に形成され、当該第1の半導体層との界面でpn接合を構成する第2導電型の第2の半導体層と、
前記第2の半導体層よりも高い不純物濃度を有し、前記第2の半導体層上に形成され、前記第2の半導体層の内側に位置する第2導電型の第3の半導体層と、
前記アバランシェフォトダイオードの光入射面側に設けられた絶縁膜と、
前記絶縁膜上に設けられ、当該アバランシェフォトダイオードに接続され、このアバランシェフォトダイオードとこれに隣接するアバランシェダイオードとの間の隙間に沿って延びた抵抗と、
を備えることを特徴とするフォトダイオードアレイ。 - 前記第1導電型はn型であり、
前記第2導電型はp型である、
ことを特徴とする請求項1に記載のフォトダイオードアレイ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006183598 | 2006-07-03 | ||
JP2006183598 | 2006-07-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016115483A Division JP6134844B2 (ja) | 2006-07-03 | 2016-06-09 | フォトダイオードアレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017135412A JP2017135412A (ja) | 2017-08-03 |
JP6454373B2 true JP6454373B2 (ja) | 2019-01-16 |
Family
ID=38894515
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008523687A Active JP5183471B2 (ja) | 2006-07-03 | 2007-07-03 | フォトダイオードアレイ |
JP2012238222A Active JP5536853B2 (ja) | 2006-07-03 | 2012-10-29 | フォトダイオードアレイ |
JP2014090297A Active JP5616552B2 (ja) | 2006-07-03 | 2014-04-24 | フォトダイオードアレイ |
JP2014185233A Active JP5952362B2 (ja) | 2006-07-03 | 2014-09-11 | フォトダイオードアレイ |
JP2016115483A Active JP6134844B2 (ja) | 2006-07-03 | 2016-06-09 | フォトダイオードアレイ |
JP2017085367A Active JP6454373B2 (ja) | 2006-07-03 | 2017-04-24 | フォトダイオードアレイ |
Family Applications Before (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008523687A Active JP5183471B2 (ja) | 2006-07-03 | 2007-07-03 | フォトダイオードアレイ |
JP2012238222A Active JP5536853B2 (ja) | 2006-07-03 | 2012-10-29 | フォトダイオードアレイ |
JP2014090297A Active JP5616552B2 (ja) | 2006-07-03 | 2014-04-24 | フォトダイオードアレイ |
JP2014185233A Active JP5952362B2 (ja) | 2006-07-03 | 2014-09-11 | フォトダイオードアレイ |
JP2016115483A Active JP6134844B2 (ja) | 2006-07-03 | 2016-06-09 | フォトダイオードアレイ |
Country Status (6)
Country | Link |
---|---|
US (5) | US8008741B2 (ja) |
EP (2) | EP2040308B1 (ja) |
JP (6) | JP5183471B2 (ja) |
CN (1) | CN101484999B (ja) |
TW (3) | TWI615954B (ja) |
WO (1) | WO2008004547A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11177408B2 (en) | 2019-03-19 | 2021-11-16 | Kabushiki Kaisha Toshiba | Light detection device |
Families Citing this family (113)
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RU2290721C2 (ru) | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
WO2010004453A2 (en) * | 2008-06-16 | 2010-01-14 | Koninklijke Philips Electronics N.V. | Radiation detector and a method of manufacturing a radiation detector |
US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
JP5185208B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
JP5805681B2 (ja) * | 2009-02-24 | 2015-11-04 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
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