WO2008004547A1 - Ensemble photodiode - Google Patents
Ensemble photodiode Download PDFInfo
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- WO2008004547A1 WO2008004547A1 PCT/JP2007/063299 JP2007063299W WO2008004547A1 WO 2008004547 A1 WO2008004547 A1 WO 2008004547A1 JP 2007063299 W JP2007063299 W JP 2007063299W WO 2008004547 A1 WO2008004547 A1 WO 2008004547A1
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- semiconductor layer
- photodiode array
- light
- type semiconductor
- substrate
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- 239000004065 semiconductor Substances 0.000 claims abstract description 180
- 238000001514 detection method Methods 0.000 claims abstract description 69
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Definitions
- the present invention relates to a photodiode array.
- Each multiplication region is operated under an operating condition called Geiger mode in order to detect weak light well. That is, a reverse voltage higher than the breakdown voltage is applied to each multiplication region, and the phenomenon that the avalanche multiplication of carriers generated by incident photons is used.
- Each light detection channel is connected to a resistor for extracting an output signal from the multiplication region, and each resistor is connected in parallel to each other. The photon incident on each photodetection channel is detected based on the peak value of the output signal taken out through each resistor.
- Patent Document 1 Japanese Patent Laid-Open No. 11-46010
- Non-patent document 1 P. Buznan, et al., “An Advanced Study of Silicon Photomultiplier J [online], ICFA Instrumentation BULLETIN Fall 2001 Issue, ⁇ [searched November 4, 2004],” URL: http: / 1 www.slac.stanford.edu/pubs/icfa/)
- Non-Patent Literature 2 P. Buznan, et al., “Siiicon Photomultipner And Its Possible application s”, Nuclear Instruments and Methods in Physics Research A 504 (2003) 48-52 Disclosure of the Invention
- the present invention has been made to solve the above problems, and an object thereof is to provide a photodiode array having a high aperture ratio with respect to light to be detected.
- a photodiode array according to the present invention includes a photodiode in which a plurality of photodetection channels for entering light to be detected are formed on a substrate having a first conductivity type semiconductor layer.
- An array which is formed on a substrate and a semiconductor layer of the first conductivity type of the substrate, forms a pn junction at the interface with the semiconductor layer and amplifies a carrier generated by incidence of light to be detected
- a second conductivity type epitaxial semiconductor layer having a plurality of multiplication regions such that each of the multiplication regions and each photodetection channel correspond to each other; and two end portions provided for each photodetection channel And a plurality of resistors that are electrically connected to the epitaxial semiconductor layer through one end and connected to the signal conductor through the other end.
- the pn junction is configured by a first conductive type semiconductor layer of a substrate and an epitaxial semiconductor layer formed on the semiconductor layer.
- the multiplication region is formed in an epitaxial semiconductor layer in which a pn junction is realized, and the multiplication region corresponding to each photodetection channel is in this epitaxial semiconductor layer. Therefore, the photodiode array does not have a pn junction end (edge) that generates an edge break down when operated in Geiger mode, and it is not necessary to provide a guard ring! Therefore, the aperture ratio of the photodiode array can be increased.
- a photodiode array according to the present invention is a photodiode array in which a plurality of photodetection channels on which light to be detected is incident are formed on a substrate having a semiconductor layer of a first conductivity type.
- the pn junction is configured by a first conductivity type epitaxial semiconductor layer on a substrate and a second conductivity type epitaxial semiconductor layer formed in the semiconductor layer. .
- the multiplication region is formed in an epitaxial semiconductor layer in which a pn junction is realized, and the multiplication region corresponding to each photodetection channel is in this epitaxial semiconductor layer. Therefore, the photodiode array does not have an end (edge) of a pn junction that generates edge breakdown when operated in Geiger mode, and it is not necessary to provide a guard ring. Therefore, the aperture ratio of the photodiode array can be increased.
- the semiconductor device further includes a first conductivity type separation portion formed between the plurality of photodetection channels so that each multiplication region of the epitaxial semiconductor layer and each photodetection channel correspond to each other.
- a photodiode array in which a plurality of light detection channels for entering light to be detected are formed on a substrate having a first conductivity type semiconductor layer, on the substrate and the first conductivity type semiconductor layer of the substrate.
- a second conductive type epitaxial semiconductor layer having a multiplication region that forms a pn junction at the interface with the substrate and has an avalanche multiplication for carriers generated by incidence of light to be detected; and two ends.
- a plurality of resistors provided for each light detection channel, electrically connected to the epitaxial semiconductor layer through one end and connected to the signal conductor through the other end; Epitaki It is preferable to provide a first conductivity type separation portion formed between a plurality of photodetection channels so that a plurality of multiplication regions of the optical semiconductor layer are formed corresponding to each photodetection channel. Yes.
- each multiplication region and each light detection channel is realized by the separation portion formed between the channels. Therefore, it is possible to increase the aperture ratio without having to provide a guard ring. In addition, since the separation portion is formed between the light detection channels, it is possible to suppress crosstalk well.
- the separation unit preferably includes a light shielding unit that also has a material force to absorb or reflect light in the wavelength band detected by the light detection channel.
- the separation part preferably includes a light-shielding part having a lower refractive index than that of the epitaxial semiconductor layer.
- the light shielding unit prevents the light generated by the avalanche multiplication from affecting the adjacent light detection channels, and the wavelength band of the detected light detected by the light detection channel, in particular, the visible light generated by the avalanche multiplication.
- the material force absorbs or reflects light in the near-infrared wavelength band. As a result, the occurrence of crosstalk can be satisfactorily suppressed.
- the signal conductor is formed above the separation portion. In this case, since the signal conductor is suppressed from crossing the light detection surface, the aperture ratio is further improved.
- the signal conductor is preferably formed on the silicon nitride film by aluminum force.
- aluminum is prevented from penetrating into the underlying film.
- “penetrating” here means that it diffuses and penetrates, and it is used in the same meaning in the following.
- the resistor is made of, for example, polysilicon, the resistor is formed on the silicon oxide film, and the silicon nitride film and the signal conductor are formed on the resistor.
- FIG. 1 is a diagram schematically showing an upper surface of a photodiode array according to a first embodiment.
- FIG. 2 is a diagram showing a part of a section taken along arrow II II of the photodiode array according to the first embodiment.
- FIG. 3 is a diagram for schematically explaining the connection relationship between each photodetection channel, a signal conductor, and a resistor.
- FIG. 4 is a cross-sectional view of a first modification of the photodiode array according to the first embodiment.
- FIG. 5 is a cross-sectional view of a second modification of the photodiode array according to the first embodiment.
- FIG. 6 is a cross-sectional view of a photodiode array according to a second embodiment.
- FIG. 7 is a diagram for schematically explaining a cross-sectional structure of a photodiode array according to a third embodiment.
- FIG. 8 is a cross-sectional view of a photodiode array according to a fourth embodiment.
- FIG. 9 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 10 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 11 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 12 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 13 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 14 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 15 is a cross-sectional view of the vicinity of the semiconductor layer 12.
- FIG. 1 is a diagram schematically showing the upper surface of the photodiode array 1 according to the first embodiment.
- FIG. 2 is a diagram showing a part of a section taken along arrows II-II of the photodiode array 1 shown in FIG.
- the photodiode array 1 is formed by laminating a plurality of semiconductor layers and insulating layers on a substrate 2. As shown in FIG. 1, the photodiode array 1 includes a plurality of optical detectors that allow detection light to enter. A multi-channel avalanche photodiode for photon counting in which the output channel 10 is formed in a matrix (4 ⁇ 4 in this embodiment). On the upper surface side of the photodiode array 1, a signal conductor 3, a resistor 4, and an electrode pad 5 are provided.
- the substrate 2 has a square shape with a side of about 1 mm, for example. Each photodetecting channel 10 has, for example, a square shape.
- the signal conducting wire 3 surrounds the outer periphery of each light detection channel 10 and the readout part 3a carrying the signal output from each light detection channel 10, the connection part 3b connecting each resistor 4 and the read part 3a.
- the channel outer peripheral portion 3c is wired as described above.
- the readout unit 3a is connected to each of the photodetection channels 10 arranged in two adjacent rows across the readout unit 3a, and is connected to the electrode pad 5 at one end thereof.
- the photodiodes are arranged in a 4 ⁇ 4 matrix, two readout portions 3a are wired on the photodiode array 1, and these are connected to the electrode pad 5. Both are connected.
- the signal conductor 3 also has an aluminum (A1) force, for example.
- the resistor 4 is provided for each light detection channel 10 via one end 4a and the outer periphery 3c of the channel, and is connected to the readout unit 3a via the other end 4b and the connection 3b. It is. A plurality (eight in this embodiment) of resistors 4 connected to the same readout unit 3a are connected to the readout unit 3a.
- the resistor 4 is made of, for example, polysilicon (Poly-Si).
- the photodiode array 1 includes a substrate 2 having a semiconductor layer whose conductivity type is n-type (first conductivity type), and a p-type (second conductivity type) formed on the substrate 2.
- a separation part 20 whose conductivity type is n-type (first conductivity type) and the signal conducting wire 3 and the resistor 4 described above formed on the protective film 16 are provided. The light to be detected is incident from the upper surface side in FIG.
- the substrate 2 includes a substrate member S, an insulating film 11 formed on the substrate member S, and an n + type semiconductor layer 12 formed on the insulating film 11.
- the substrate member S is made of, for example, Si (silicon).
- the insulating film 11 is made of, for example, SiO (oxide silicon).
- the n + type semiconductor layer 12 is, for example, Si It is an n-type semiconductor layer with high conductivity and high impurity concentration.
- the p-type semiconductor layer 13 is an epitaxial semiconductor layer having a p-type conductivity type with a low impurity concentration.
- the p-type semiconductor layer 13 forms a pn junction at the interface with the substrate 2.
- the p-type semiconductor layer 13 has a plurality of multiplication regions AM for avalanche multiplication of carriers generated by incidence of light to be detected corresponding to each light detection channel 10.
- the thickness of the p-type semiconductor layer 13 is, for example, 3 ⁇ m to 5 ⁇ m.
- the p-type semiconductor layer 13 is also S, for example.
- the p + type semiconductor layer 14 is formed on the p ⁇ type semiconductor layer 13 corresponding to the multiplication region AM of each photodetecting channel 10. That is, the region in the vicinity of the interface between the p ⁇ type semiconductor layer 13 and the substrate 2 located below the p + type semiconductor layer 14 in the stacking direction of the semiconductor layers (hereinafter simply referred to as the stacking direction) is the multiplication region AM.
- the p + type semiconductor layer 14 is, for example, S.
- the separation unit 20 is formed between the plurality of light detection channels 10 and separates the light detection channels 10. That is, the separation unit 20 is formed so that the multiplication region AM is formed in the p_ type semiconductor layer 13 corresponding to each photodetection channel 10 on a one-to-one basis.
- the separation unit 20 is formed in a two-dimensional lattice pattern on the substrate 2 so as to completely surround each multiplication area AM.
- the separation part 20 is formed so as to penetrate from the upper surface side to the lower surface side of the p-type semiconductor layer 13 in the stacking direction.
- the impurity of the separation part 20 is made of, for example, P, and the n-type semiconductor layer having a high impurity concentration.
- the isolation portion 20 may be formed by diffusion, a long heat treatment time is required, and therefore, the impurity of the n + -type semiconductor layer 12 may diffuse into the epitaxial semiconductor layer and the pn junction interface may rise.
- the isolation part 20 may be formed by performing trench etching in the vicinity of the center of the region corresponding to the isolation part 20 and then diffusing impurities.
- a light shielding portion is formed in this trench by filling it with a substance that absorbs or reflects light in the wavelength band that is absorbed by the light detection channel. This can be achieved by preventing cross-talk that occurs when the light emission due to doubling affects adjacent photodetection channels.
- the p ⁇ type semiconductor layer 13, the p + type semiconductor layer 14, and the separation unit 20 form a plane on the upper surface side of the photodiode array 1, and a protective film 16 is formed thereon.
- the protective film 16 is formed of an insulating layer having a SiO force, for example.
- a signal conductor 3 and a resistor 4 are formed on the protective film 16.
- Read signal lead 3 The ridge portion 3a and the resistor 4 are formed above the separation portion 20.
- the signal conductor 3 functions as an anode, and as a force sword, although not shown, a transparent electrode layer (for example, ITO) is formed on the entire lower surface of the substrate 2 (the side without the insulating layer 11). (A layer made of Indium T in Oxide) may be provided. Alternatively, as a force sword, the electrode portion may be formed so as to be drawn out to the surface side.
- a transparent electrode layer for example, ITO
- ITO Indium T in Oxide
- FIG. 3 is a diagram for schematically explaining the connection relationship between each light detection channel 10, the signal conductor 3, and the resistor 4.
- the P + type semiconductor layer 14 and the signal conductor 3 (channel outer peripheral portion 3c) of each light detection channel 10 are directly connected!
- the signal conducting wire 3 (channel outer peripheral portion 3c) and the p-type semiconductor layer 13 are electrically connected.
- the p-type semiconductor layer 13 and one end 4a of the resistor 4 are connected via the signal conductor 3 (channel outer peripheral portion 3c), and the other end 4b of the resistor 4 is read via the connecting portion 3b. Connected to the outlet 3a.
- the photodiode array 1 configured in this way When the photodiode array 1 configured in this way is used for photon counting, it is operated under an operating condition called Geiger mode. During this Geiger mode operation, a reverse voltage (for example, 50 V or more) higher than the breakdown voltage is applied to each photodetecting channel 10. In this state, when the light to be detected is incident on each light detection channel 10 in the upper surface side force, the light to be detected is absorbed in each light detection channel 10 to generate carriers. The generated carriers move while accelerating according to the electric field in each photodetecting channel 10, and are multiplied in each multiplication area AM. The multiplied carrier is taken out by the signal conductor 3 through the resistor 4 and detected based on the peak value of the output signal.
- a reverse voltage for example, 50 V or more
- the total output from all channels can be detected to count how many photodetection channels 10 in the photodiode array 1 have output. Is done. Therefore, in the photodiode array 1, photon counting is performed by a single irradiation of the light to be detected.
- the pn junction includes an n + type semiconductor layer 12 of the substrate 2 and a p ⁇ type semiconductor layer 13 that is an epitaxial semiconductor layer formed on the n + type semiconductor layer 12 of the substrate 2. It is constituted by.
- the multiplication region AM is p-type
- Correspondence to each photodetection channel 10 of each multiplication area AM formed in the conductor layer 13 is realized by a separation unit 20 formed between the photodetection channels 10.
- the pn junction surface is composed of an interface between the n + -type semiconductor layer 12 and the p-type semiconductor layer 13 and an interface between the isolation portion 20 and the p-type semiconductor layer 13, and the high concentration impurity region is convex.
- the photodiode array 1 does not have an edge (edge) of the pn junction that causes edge breakdown when operated in Geiger mode. for that reason
- the photodiode array 1 it is not necessary to provide a guard ring for the pn junction of each photodetecting channel 10. Thereby, the aperture ratio of the photodiode array 1 can be remarkably increased.
- the photodiode array 1 can also increase the detection efficiency.
- the separation layer 20 is formed between the photodetection channels 10. Therefore, the channels can be sufficiently separated.
- the readout part 3 a of the signal conductor 3 is formed above the separation part 20. Therefore, the signal conductor 3 is suppressed from crossing over the multiplication area AM, that is, on the light detection surface, and the aperture ratio is further improved. Furthermore, it is considered effective in suppressing dark current. Further, in the photodiode array 1, since the resistor 4 is also formed above the separating portion 20, the aperture ratio is further improved.
- the photodiode array 1 has an insulating film 11 having, for example, a Si 2 O force between the substrate member S and the n + type semiconductor layer 12, thereby providing a substrate.
- FIG. 4 is a cross-sectional view of a first modification of the photodiode array 1 according to this embodiment.
- a plurality (two in the present modified example) of separation parts 20 are formed between the light detection channels 10.
- FIG. 5 is a sectional view of a second modification of the photodiode array 1 according to this embodiment.
- the separating part 20 does not penetrate from the upper surface side to the lower surface side of the p-type semiconductor layer 13 in the stacking direction, but only near the upper surface (detected light incident surface). Is formed.
- the epitaxial semiconductor layer is the second conductivity type.
- the epitaxial semiconductor layer is the first conductivity type, and the second conductivity type diffusion region is provided in the semiconductor layer. Make a pn junction with the first conductivity type epitaxial semiconductor layer and the second conductivity type diffusion region.
- FIG. 6 is a cross-sectional view of the photodiode array 30 according to the second embodiment.
- the photodiode array 30 according to the second embodiment is different from the photodiode array 1 according to the first embodiment in that the separation unit 20 includes a light shielding unit.
- the separation unit 20 includes a light shielding unit 22 made of a material that absorbs light in the wavelength band (visible to near infrared) of the detected light detected by the light detection channel 10.
- the light shielding part 22 is embedded in the separation part 20 like a core extending from the upper surface side to the lower surface side of the p-type semiconductor layer 13.
- the light-shielding portion 22 is made of a metal such as black photoresist or tandastane in which a black dye or a pigment such as carbon black subjected to insulation treatment is mixed in the photoresist.
- the material constituting the light shielding part 22 is not an insulating material (for example, a metal such as tungsten)
- the light shielding part 22 is coated with an insulating film such as SiO.
- the isolation portion 20 is formed by diffusion, a long heat treatment time is required. Therefore, impurities in the n + -type semiconductor layer 12 diffuse into the epitaxial semiconductor layer, resulting in a pn junction. It is conceivable that the interface rises. In order to prevent this rise, the isolation portion 20 may be formed by performing trench etching around the center of the region corresponding to the isolation layer 20 and then diffusing impurities. As shown in Figure 6, impurities After the diffusion, the n + type semiconductor layer 12 and the separating portion 20 are connected.
- the remaining trench is made of a material that absorbs light in the wavelength band absorbed by the light detection channel as described above (which may be a material that reflects light in the wavelength band absorbed by the light detection channel, as described later). It is also possible to form a light shielding portion by filling and prevent crosstalk caused by light emission caused by avalanche multiplication affecting adjacent photodetection channels.
- the photodiode array 30 does not have a pn junction end (edge) in which edge breakdown occurs when operated in the Geiger mode. Therefore, it is not necessary to provide a guard ring for the pn junction of each photodetecting channel 10 even in the photodiode array 30. As a result, the aperture ratio of the photodiode array 30 can be increased.
- the aperture ratio is further improved. Furthermore, it is considered effective in suppressing dark current.
- the photodiode film 30 also has the insulating film 11 between the substrate member S and the n + type semiconductor layer 12, it is possible to suppress afterpulses.
- Each separation unit 20 includes a light shielding unit 22 having a material force that absorbs light in the wavelength band of the detected light detected by the light detection channel 10. Therefore, since the detected light is absorbed by the light shielding portion, it is possible to satisfactorily suppress the occurrence of crosstalk. Further, the light shielding unit 22 prevents the light generated by the avalanche multiplication from affecting the adjacent light detection channel 10, and the wavelength band of the detected light detected by the light detection channel 10, particularly by the avalanche multiplication. Since it is made of a material that absorbs light in the visible to near-infrared wavelength band, the occurrence of crosstalk can be satisfactorily suppressed.
- the light shielding unit 22 is not limited to a material that absorbs visible to near-infrared light, and may be a material that reflects visible to near-infrared light. Even in this case, the detected light is reflected by the light shielding portion. Therefore, the occurrence of crosstalk can be satisfactorily suppressed. Furthermore, the shading part
- the 22 indicates the wavelength band of the detected light detected by the photodetection channel 10 so that the light generated by the avalanche multiplication does not affect the adjacent photodetection channel 10, especially the visible to Since it is a material force that reflects light in the near-infrared wavelength band, it is possible to satisfactorily suppress the occurrence of crosstalk.
- the light shielding unit 22 is not limited to a material that absorbs or reflects light from visible to near infrared, but a material that absorbs or reflects light in the wavelength band of the detected light detected by the light detection channel 10. If it is. However, the light shielding unit 22 prevents the light generated by the avalanche multiplication from affecting the adjacent optical detection channel 10 by detecting the wavelength band of the detected light detected by the optical detection channel 10, particularly by the avalanche multiplication. It is also preferable to have a material force that absorbs or reflects the generated visible to near-infrared wavelength band light.
- the light shielding portion 22 may be made of a material having a refractive index lower than that of the separation portion 20. Even in these cases, since the light is reflected by the light shielding portion, it is possible to satisfactorily suppress the occurrence of crosstalk.
- FIG. 7 is a diagram for schematically explaining the cross-sectional structure of the photodiode array 40 according to the third embodiment.
- the photodiode array 40 according to the third embodiment is different from the photodiode array 1 according to the first embodiment in that the signal conductor 3 is formed on a silicon nitride film.
- the photodiode array 40 includes a substrate 2 having a semiconductor layer whose conductivity type is n-type (first conductivity type), and a conductivity type formed on the substrate 2 is p-type.
- the layer 15 includes an n-type (first conductivity type) separating portion 20 formed in the layer 15, a signal conductor 3 having an aluminum force, and a resistor 4 having, for example, Poly-S. The light to be detected is incident from the upper side of FIG.
- the substrate 2 includes an n + type substrate member S and an n type semiconductor layer 12 formed on the substrate member S.
- the p-type semiconductor layer 15 is an epitaxial layer having a p-type conductivity lower than that of the p + type semiconductor layer 14. It is a chiral semiconductor layer.
- the p-type semiconductor layer 15 forms a pn junction at the interface between the substrate 2 and the n-type semiconductor layer 12.
- the p-type semiconductor layer 15 has a plurality of multiplication regions AM corresponding to each photodetection channel 10 for avalanche multiplication of carriers generated by incidence of light to be detected.
- the P-type semiconductor layer 15 is, for example, S.
- the p-type semiconductor layer 15, the p + -type semiconductor layer 14, and the separation portion 20 form a plane on the upper surface side of the photodiode array 40, and protective films 16a and 16b are formed thereon.
- the protective film 16a is made of an insulating film such as an oxide silicon film (SiO film), and the protective film 16b is made of nitrogen.
- Each is formed by an insulating film that also has silicon nitride (SiN film or SiN film) force.
- the protective film 16a, the resistor 4, the protective film 16b, and the signal conducting wire 3 are laminated in this order on the separation unit 20.
- the protective film 16 a is laminated on the separation part 20.
- a resistor 4 is laminated on the protective film 16a.
- a protective film 16 b is laminated except for a part of each resistor 4.
- the signal conductor 3 is laminated for electrical connection on a part of the resistor 4 on which the protective film 16b and the protective film 16b are not laminated.
- the readout part 3a of the signal conductor 3 is provided between the resistors 4, and the signal conductor 3 as an electrical connection to the connection part 3b or the channel outer peripheral part 3c is provided on the resistor 4 for electrical connection.
- Each is laminated.
- a protective film 16b is laminated on the p + type semiconductor layer 14 except for a part thereof.
- a signal conductor 3 is provided for electrical connection on the part of the p + type semiconductor layer 14 where the protective film 16b is not stacked and on the part of the protective film 16b stacked on the P + type semiconductor layer 14.
- the channel outer peripheral portion 3c is laminated.
- the photodiode array 40 does not have an edge (edge) of a pn junction that causes edge breakdown when operated in Geiger mode. Therefore, it is not necessary to provide a guard ring for the pn junction of each photodetecting channel 10 even in the photodiode array 40. As a result, the aperture ratio of the photodiode array 40 can be increased.
- the aperture ratio is further improved. Furthermore, it is considered effective in suppressing dark current.
- the signal conductor 3 is made of aluminum, for example, when it is formed on an oxide film, there arises a problem that aluminum is infiltrated into the underlying film by application of a high voltage. With respect to such problems, in the photodiode array 40, the signal conductor 3 is formed on the protective film 16b made of a silicon nitride film. For this reason, even when a high voltage is applied to the photodiode array 40, aluminum is prevented from penetrating into the underlying film (protective film 16b).
- a protective film 16b and a protective film 16a or a resistor 4 are laminated under the readout part 3a of the signal conductor 3. Therefore, the penetration of aluminum into the separation part 20 and the P-type semiconductor layer 15 by the application of a high voltage is well suppressed.
- the aluminum is preferably suppressed from entering the light detection channel 10 and the separation unit 20.
- the resistor 4 made of polysilicon (Poly-Si) is formed on the protective film 16a.
- a protective film 16b and a signal conductor 3 are formed.
- a p-type semiconductor layer may be used instead of the n-type semiconductor layer 12.
- a pn junction is formed between the p-type semiconductor layer and the n + -type substrate member S (substrate 2), and the multiplication unit AM is formed in the p-type semiconductor layer. It becomes.
- FIG. 8 is a cross-sectional view of the photodiode array 50 according to the fourth embodiment.
- the photodiode array 50 according to the fourth embodiment differs from the photodiode array 1 according to the first embodiment in that the separation unit 20 is not provided.
- the p-type semiconductor layer 13 has a plurality of multiplication regions AM such that each multiplication region AM and each light detection channel 10 correspond to each other.
- a signal conductor 3 and a resistor 4 are formed between the light detection channels 10.
- photodiode array 50 is also operated in Geiger mode. An edge breakdown occurs when the end of the pn junction (edge) does not exist. Therefore, it is not necessary to provide a guard ring for the pn junction of each photodetecting channel 10 even in the photodiode array 50. As a result, the aperture ratio of the photodiode array 50 can be increased. Furthermore, the photodiode array 50 can exhibit an even higher aperture ratio by not having a separation part.
- the photodiode array 50 can be increased by increasing the detection efficiency.
- the readout portion 3a of the signal conducting wire 3 is formed between the light detection channels 10, so that the aperture ratio is further improved. Furthermore, it is considered effective in suppressing dark current.
- the insulating film 12 is provided between the substrate member S and the n + type semiconductor layer 12, afterpulses can be suppressed.
- the number of light detection channels formed in the photodiode array is not limited to the number (4 ⁇ 4) in the above embodiment.
- the number of separation parts 20 formed between the light detection channels 10 is not limited to the number shown in the above embodiment and the modification, and may be three or more, for example.
- the signal conducting wire 3 may not be formed above the separating portion 20.
- the resistor 4 may not be formed above the separating portion 20.
- each layer is not limited to those exemplified in the embodiment and the modification examples.
- a buffer layer having an n-type semiconductor power may be used under the n-type semiconductor layer 12.
- a p-type semiconductor layer may be used in place of the n-type semiconductor layer 12, and a noferer layer made of an n-type semiconductor may be used thereunder.
- a pn junction is formed between the p-type semiconductor layer and the n-type buffer layer, and the multiplication unit AM is formed in the p-type semiconductor layer.
- a p-type semiconductor layer is used instead of the n-type semiconductor layer 12, and a noferer layer having a p-type semiconductor power is used below this. Also good.
- a pn junction is formed between the p-type buffer layer and the n + -type substrate member S (substrate 2), and the multiplication unit AM is formed in the p-type buffer layer.
- the photodiode array described above is formed by two-dimensionally arranging a plurality of avalanche photodiodes (also having a pn junction force of the detection channel 10) operating in Geiger mode.
- the high-epitaxial semiconductor layer 13 is included.
- one end (anode) of the avalanche photodiode is electrically connected, the resistor 4 disposed on the light incident surface of the avalanche photodiode, and the signal conductor 3 connected to the other end of the resistor 4.
- the resistor 4 disposed on the light incident surface of the avalanche photodiode
- the signal conductor 3 connected to the other end of the resistor 4.
- FIG. 9 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG. 2, and FIG. 10 is a photodiode array according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 11 is a cross-sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG. 5, and FIG. 12 is a photodiode according to a modification of the layer structure of the embodiment shown in FIG.
- FIG. 13 is a sectional view of a photodiode array according to a modification of the layer structure of the embodiment shown in FIG. 7, and FIG. 14 is a modification of the layer structure of the embodiment shown in FIG. It is sectional drawing of a photodiode array.
- the P-type semiconductor layer 13 or the p-type semiconductor layer 15 shown in FIGS. 2, 4, 5, 6, 6, 7, and 8 is used.
- the n-type semiconductor layer R13 or R15 is used.
- a pn junction is formed at the interface between the low-concentration n-type semiconductor layer R13 (or R15) and the p-type semiconductor layer 14, and a depletion layer such as a pn junction is connected to the n-type semiconductor layer R13 (or R15). It expands toward the depletion layer, and is formed by force toward the n-type semiconductor layer R13 (or R15) from the multiplication region AM force / n junction interface.
- Other structures and operations are the same as described above.
- These photodiode arrays 1 are formed by forming a plurality of light detection channels 10 on which light to be detected is incident on an n-type substrate 2 having an n-type semiconductor layer 12.
- a photodiode array in which a plurality of light detection channels 10 for entering light to be detected are formed on a substrate having a semiconductor layer 12 (S) which is an n + type of the first conductivity type.
- a carrier formed on the first conductivity type semiconductor layer 12 of the substrate 2 and incident upon detection light incident is reduced.
- a first conductivity type n_type epitaxial semiconductor layer R 13 (or R15) having a plurality of multiplication areas AM to be multiplied by each of the multiplication areas AM and the respective light detection channels.
- the resistor 4 is provided for each light detection channel 10 through one end 4a and the channel outer periphery 3c, and through the other end 4b and connection 3b. Connected to the reading unit 3a.
- the plurality of resistors 4 connected to the same readout unit 3a are connected to the readout unit 3a.
- the pn junction includes the first conductivity type epitaxial semiconductor layer R13 (or R15) on the substrate and the second semiconductor layer R13 (or R15) formed in the epitaxial semiconductor layer R13 (or R15). And a conductive type epitaxial semiconductor layer 14. Further, the multiplication region AM is formed in the epitaxial semiconductor layer R13 (or R15) in which the pn junction is realized, and the multiplication region AM corresponding to each photodetection channel is the epitaxial semiconductor layer R13 (or R15). It is in.
- the photodiode array does not have an end (edge) of a pn junction that generates edge breakdown when operated in Geiger mode, and it is not necessary to provide a guard ring. Therefore, the aperture ratio of the photodiode array can be increased.
- FIG. 15 is a cross-sectional view showing the buffer layer 12X provided on the semiconductor layer 12.
- the buffer layer 12X also has an n-type semiconductor layer force.
- a nother layer 12X having an n-type semiconductor force may be used.
- a nother layer 12X made of a p-type semiconductor may be used on the n-type semiconductor layer 12.
- a pn junction is formed between the n-type semiconductor layer 12 and the p-type buffer layer 12X, and a multiplication unit AM is formed in the p-type buffer layer. Become.
- a p-type semiconductor layer is used instead of the n-type semiconductor layer 12, and a buffer layer that also has a p-type semiconductor power is provided thereon. May be used.
- a pn junction is formed between the p-type semiconductor layer and the n + -type substrate member S (substrate 2), and the multiplication unit AM is formed in the p-type semiconductor layer.
- the present invention can be used as a photodiode array having a high aperture ratio with respect to light to be detected.
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Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
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EP07768073.4A EP2040308B1 (en) | 2006-07-03 | 2007-07-03 | Photodiode array |
EP15169498.1A EP3002794B1 (en) | 2006-07-03 | 2007-07-03 | Photodiode array |
US12/306,963 US8008741B2 (en) | 2006-07-03 | 2007-07-03 | Photodiode array |
CN2007800253075A CN101484999B (zh) | 2006-07-03 | 2007-07-03 | 光电二极管阵列 |
JP2008523687A JP5183471B2 (ja) | 2006-07-03 | 2007-07-03 | フォトダイオードアレイ |
US13/116,525 US8610231B2 (en) | 2006-07-03 | 2011-05-26 | Photodiode array including channel surrounding part |
US13/774,002 US9484366B2 (en) | 2006-07-03 | 2013-02-22 | Photodiode array |
US15/293,784 US10050069B2 (en) | 2006-07-03 | 2016-10-14 | Photodiode array |
US16/040,709 US10396107B2 (en) | 2006-07-03 | 2018-07-20 | Photodiode array |
Applications Claiming Priority (2)
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JP2006-183598 | 2006-07-03 | ||
JP2006183598 | 2006-07-03 |
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Application Number | Title | Priority Date | Filing Date |
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US12/306,963 A-371-Of-International US8008741B2 (en) | 2006-07-03 | 2007-07-03 | Photodiode array |
US13/116,525 Division US8610231B2 (en) | 2006-07-03 | 2011-05-26 | Photodiode array including channel surrounding part |
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WO2008004547A1 true WO2008004547A1 (fr) | 2008-01-10 |
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PCT/JP2007/063299 WO2008004547A1 (fr) | 2006-07-03 | 2007-07-03 | Ensemble photodiode |
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US (5) | US8008741B2 (ja) |
EP (2) | EP2040308B1 (ja) |
JP (6) | JP5183471B2 (ja) |
CN (1) | CN101484999B (ja) |
TW (3) | TWI443817B (ja) |
WO (1) | WO2008004547A1 (ja) |
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GB201311055D0 (en) | 2013-06-21 | 2013-08-07 | St Microelectronics Res & Dev | Single-photon avalanche diode and an array thereof |
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US9450007B1 (en) | 2015-05-28 | 2016-09-20 | Stmicroelectronics S.R.L. | Integrated circuit with reflective material in trenches and related methods |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61114548A (ja) * | 1984-11-09 | 1986-06-02 | Res Dev Corp Of Japan | 半導体素子分離帯の形成方法 |
JPH07183568A (ja) * | 1993-12-24 | 1995-07-21 | Ricoh Co Ltd | 受光素子 |
JPH07221341A (ja) * | 1993-12-08 | 1995-08-18 | Nikon Corp | 紫外線検出用シリコンアバランシェフォトダイオード |
JPH09148618A (ja) * | 1995-11-24 | 1997-06-06 | Hamamatsu Photonics Kk | シリコンアバランシェフォトダイオード |
JPH1146010A (ja) | 1997-05-27 | 1999-02-16 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
JP2001244494A (ja) * | 2000-02-29 | 2001-09-07 | Hamamatsu Photonics Kk | 光追尾センサ |
JP2005045125A (ja) * | 2003-07-24 | 2005-02-17 | Hamamatsu Photonics Kk | 光検出素子の製造方法 |
WO2006068184A1 (ja) * | 2004-12-24 | 2006-06-29 | Hamamatsu Photonics K.K. | ホトダイオードアレイ |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2861119B2 (ja) | 1989-10-13 | 1999-02-24 | 富士ゼロックス株式会社 | イメージセンサの製造方法 |
JPH05102512A (ja) | 1991-10-09 | 1993-04-23 | Nikko Kyodo Co Ltd | 半導体放射線検出器の製造方法 |
JPH07240534A (ja) * | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
JP2001352094A (ja) | 2000-04-06 | 2001-12-21 | Hamamatsu Photonics Kk | ホトダイオードアレイ |
US6538299B1 (en) * | 2000-10-03 | 2003-03-25 | International Business Machines Corporation | Silicon-on-insulator (SOI) trench photodiode |
US6943051B2 (en) * | 2000-10-19 | 2005-09-13 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes integrated with CMOS |
IES20010616A2 (en) | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
JP2003168818A (ja) * | 2001-09-18 | 2003-06-13 | Anritsu Corp | 順メサ型アバランシェフォトダイオード及びその製造方法 |
EP1472739A1 (en) | 2002-02-08 | 2004-11-03 | Qinetiq Limited | Photodetector circuit |
GB0216075D0 (en) * | 2002-07-11 | 2002-08-21 | Qinetiq Ltd | Photodetector circuits |
JP2004273746A (ja) * | 2003-03-07 | 2004-09-30 | Hitachi Cable Ltd | 発光ダイオードアレイ |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
WO2005048319A2 (en) * | 2003-11-06 | 2005-05-26 | Yale University | Large-area detector |
KR101046817B1 (ko) * | 2003-12-29 | 2011-07-06 | 크로스텍 캐피탈, 엘엘씨 | 센싱 감도를 개선하기 위한 이미지 센서 및 그 구동 방법 |
RU2290721C2 (ru) * | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
JP5213441B2 (ja) * | 2004-07-28 | 2013-06-19 | クォンタム セミコンダクター リミテッド ライアビリティ カンパニー | Cmosと積層光活性層の一体集積化用レイアウト |
JP2006156837A (ja) | 2004-11-30 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、発光モジュール、および照明装置 |
EP1679749A1 (en) * | 2005-01-11 | 2006-07-12 | Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 | Semiconductor photodiode and method of making |
RU2416840C2 (ru) * | 2006-02-01 | 2011-04-20 | Конинклейке Филипс Электроникс, Н.В. | Лавинный фотодиод в режиме счетчика гейгера |
CN104538459A (zh) | 2006-04-25 | 2015-04-22 | 皇家飞利浦电子股份有限公司 | 采用(bi) cmos工艺的雪崩光电二极管的实现 |
-
2007
- 2007-07-03 WO PCT/JP2007/063299 patent/WO2008004547A1/ja active Application Filing
- 2007-07-03 EP EP07768073.4A patent/EP2040308B1/en active Active
- 2007-07-03 TW TW096124158A patent/TWI443817B/zh active
- 2007-07-03 CN CN2007800253075A patent/CN101484999B/zh active Active
- 2007-07-03 US US12/306,963 patent/US8008741B2/en active Active
- 2007-07-03 EP EP15169498.1A patent/EP3002794B1/en active Active
- 2007-07-03 JP JP2008523687A patent/JP5183471B2/ja active Active
- 2007-07-03 TW TW103118194A patent/TWI523209B/zh active
- 2007-07-03 TW TW104143447A patent/TWI615954B/zh active
-
2011
- 2011-05-26 US US13/116,525 patent/US8610231B2/en active Active
-
2012
- 2012-10-29 JP JP2012238222A patent/JP5536853B2/ja active Active
-
2013
- 2013-02-22 US US13/774,002 patent/US9484366B2/en active Active
-
2014
- 2014-04-24 JP JP2014090297A patent/JP5616552B2/ja active Active
- 2014-09-11 JP JP2014185233A patent/JP5952362B2/ja active Active
-
2016
- 2016-06-09 JP JP2016115483A patent/JP6134844B2/ja active Active
- 2016-10-14 US US15/293,784 patent/US10050069B2/en active Active
-
2017
- 2017-04-24 JP JP2017085367A patent/JP6454373B2/ja active Active
-
2018
- 2018-07-20 US US16/040,709 patent/US10396107B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61114548A (ja) * | 1984-11-09 | 1986-06-02 | Res Dev Corp Of Japan | 半導体素子分離帯の形成方法 |
JPH07221341A (ja) * | 1993-12-08 | 1995-08-18 | Nikon Corp | 紫外線検出用シリコンアバランシェフォトダイオード |
JPH07183568A (ja) * | 1993-12-24 | 1995-07-21 | Ricoh Co Ltd | 受光素子 |
JPH09148618A (ja) * | 1995-11-24 | 1997-06-06 | Hamamatsu Photonics Kk | シリコンアバランシェフォトダイオード |
JPH1146010A (ja) | 1997-05-27 | 1999-02-16 | Hamamatsu Photonics Kk | アバランシェフォトダイオード |
JP2001244494A (ja) * | 2000-02-29 | 2001-09-07 | Hamamatsu Photonics Kk | 光追尾センサ |
JP2005045125A (ja) * | 2003-07-24 | 2005-02-17 | Hamamatsu Photonics Kk | 光検出素子の製造方法 |
WO2006068184A1 (ja) * | 2004-12-24 | 2006-06-29 | Hamamatsu Photonics K.K. | ホトダイオードアレイ |
Non-Patent Citations (4)
Title |
---|
BUZHAN P. ET AL.: "An Advanced Study of Silicon Photomultiplier", ICFA INSTRUMENTATION BULLETIN, vol. 23, 2001, pages 1 - 14, XP002997242 * |
P. BUZHAN ET AL.: "An Advanced Study of Silicon Photomultiplier", ICFA INSTRUMENTATION BULLETIN FALL 2001 ISSUE, 4 November 2004 (2004-11-04), Retrieved from the Internet <URL:http://www.slac.stanford.edu/pubs/icfa/>> |
P. BUZHAN ET AL.: "Silicon Photomultiplier And Its Possible applications", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A, vol. 504, 2003, pages 48 - 52, XP004426180, DOI: doi:10.1016/S0168-9002(03)00749-6 |
See also references of EP2040308A4 * |
Cited By (122)
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---|---|---|---|---|
US7759623B2 (en) | 2004-05-05 | 2010-07-20 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier |
WO2010004453A2 (en) | 2008-06-16 | 2010-01-14 | Koninklijke Philips Electronics N.V. | Radiation detector and a method of manufacturing a radiation detector |
RU2493573C2 (ru) * | 2008-06-16 | 2013-09-20 | Конинклейке Филипс Электроникс Н.В. | Детектор излучений и способ изготовления детектора излучений |
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JP2013016637A (ja) * | 2011-07-04 | 2013-01-24 | Hamamatsu Photonics Kk | フォトダイオードアレイ、基準電圧決定方法、及び推奨動作電圧決定方法 |
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WO2013005353A1 (ja) * | 2011-07-04 | 2013-01-10 | 浜松ホトニクス株式会社 | フォトダイオードアレイ、基準電圧決定方法、及び推奨動作電圧決定方法 |
TWI573255B (zh) * | 2011-10-21 | 2017-03-01 | Hamamatsu Photonics Kk | Light detection device |
JP2013089919A (ja) * | 2011-10-21 | 2013-05-13 | Hamamatsu Photonics Kk | 光検出装置 |
WO2013058001A1 (ja) * | 2011-10-21 | 2013-04-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US9368528B2 (en) | 2011-10-21 | 2016-06-14 | Hamamatsu Photonics K.K. | Light detection device having a semiconductor light detection element and a mounting substrate with quenching circuits |
WO2013058003A1 (ja) * | 2011-10-21 | 2013-04-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2013089918A (ja) * | 2011-10-21 | 2013-05-13 | Hamamatsu Photonics Kk | 光検出装置 |
US9825071B2 (en) | 2011-10-21 | 2017-11-21 | Hamamatsu Photonics K.K. | Light detection device |
US9425224B2 (en) | 2011-10-21 | 2016-08-23 | Hamamatsu Photonics K.K. | Light detection device |
US8969990B2 (en) | 2011-10-21 | 2015-03-03 | Hamamatsu Photonics K.K. | Light detection device |
US9773935B2 (en) | 2011-10-21 | 2017-09-26 | Hamamatsu Photonics K.K. | Light detection device including a semiconductor light detection element, and a semiconductor light detection element having a through-hole electrode connection |
US9768222B2 (en) | 2011-10-21 | 2017-09-19 | Hamamatsu Photonics K.K. | Light detection device including a semiconductor light detection element, a mounting substrate, and quenching circuits wherein the first electrodes of the light detection element corresponding to the second electrodes of the mounting substrate are electrically connected through bump electrodes |
US9435686B2 (en) | 2011-10-21 | 2016-09-06 | Hamamatsu Photonics K.K. | Light detection device having a semiconductor light detection element, a mounting substrate, a glass substrate and a plurality of through-hole electrodes electrically connected to quenching resistors |
WO2013058002A1 (ja) * | 2011-10-21 | 2013-04-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US9748428B2 (en) | 2011-10-21 | 2017-08-29 | Hamamatsu Photonics K.K. | Light detection device including a semiconductor light detection element with a through-hole electrode connection, a mounting substrate and a light-transmissive substrate |
JP2013195295A (ja) * | 2012-03-21 | 2013-09-30 | Toshiba Corp | 放射線検出装置 |
US9040927B2 (en) | 2012-03-21 | 2015-05-26 | Kabushiki Kaisha Toshiba | Radiation detection apparatus |
US9377540B2 (en) | 2012-03-21 | 2016-06-28 | Kabushiki Kaisha Toshiba | Radiation detection apparatus |
JP2014090034A (ja) * | 2012-10-29 | 2014-05-15 | Hamamatsu Photonics Kk | フォトダイオードアレイ |
JP2015084392A (ja) * | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
US10923614B2 (en) | 2014-07-25 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Photodiode, photodiode array, and solid-state imaging device |
JP2016063138A (ja) * | 2014-09-19 | 2016-04-25 | 浜松ホトニクス株式会社 | 紫外線センサ及び紫外線検出装置 |
JP2016162772A (ja) * | 2015-02-26 | 2016-09-05 | 株式会社東芝 | 光検出器、その製造方法、放射線検出器、および放射線検出装置 |
JP2015179087A (ja) * | 2015-04-30 | 2015-10-08 | 株式会社東芝 | 放射線検出装置およびct装置 |
JP2016012727A (ja) * | 2015-08-04 | 2016-01-21 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2016021575A (ja) * | 2015-08-04 | 2016-02-04 | 浜松ホトニクス株式会社 | 光検出装置の接続構造 |
US10192920B2 (en) | 2015-09-09 | 2019-01-29 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state imaging device |
JP2016029738A (ja) * | 2015-10-28 | 2016-03-03 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2017163046A (ja) * | 2016-03-10 | 2017-09-14 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
JP2016164992A (ja) * | 2016-03-29 | 2016-09-08 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2016154260A (ja) * | 2016-04-25 | 2016-08-25 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2016154259A (ja) * | 2016-04-25 | 2016-08-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2016184753A (ja) * | 2016-06-01 | 2016-10-20 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2016174178A (ja) * | 2016-06-01 | 2016-09-29 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
WO2017212986A1 (ja) * | 2016-06-08 | 2017-12-14 | 浜松ホトニクス株式会社 | 光検出ユニット、光検出装置、及び、光検出ユニットの製造方法 |
JP2017219443A (ja) * | 2016-06-08 | 2017-12-14 | 浜松ホトニクス株式会社 | 光検出ユニット、光検出装置、及び、光検出ユニットの製造方法 |
US10944016B2 (en) | 2016-06-08 | 2021-03-09 | Hamamatsu Photonics K.K. | Optical detection unit, optical detection device, and method for manufacturing optical detection unit |
JP2016197730A (ja) * | 2016-06-17 | 2016-11-24 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
US11374043B2 (en) | 2016-07-27 | 2022-06-28 | Hamamatsu Photonics K.K. | Photodetection device with matrix array of avalanche diodes |
CN109478578A (zh) * | 2016-07-27 | 2019-03-15 | 浜松光子学株式会社 | 光检测装置 |
WO2018021411A1 (ja) * | 2016-07-27 | 2018-02-01 | 浜松ホトニクス株式会社 | 光検出装置 |
JPWO2018021411A1 (ja) * | 2016-07-27 | 2019-05-23 | 浜松ホトニクス株式会社 | 光検出装置 |
CN109478578B (zh) * | 2016-07-27 | 2022-01-25 | 浜松光子学株式会社 | 光检测装置 |
KR20190129683A (ko) * | 2017-03-22 | 2019-11-20 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 및 신호 처리 장치 |
US11424281B2 (en) | 2017-03-22 | 2022-08-23 | Sony Semiconductor Solutions Corporation | Imaging device and signal processing device |
US10777597B2 (en) | 2017-03-22 | 2020-09-15 | Sony Semiconductor Solutions Corporation | Imaging device |
WO2018174090A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
JPWO2018174090A1 (ja) * | 2017-03-22 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
JP7237819B2 (ja) | 2017-03-22 | 2023-03-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
KR102566061B1 (ko) * | 2017-03-22 | 2023-08-11 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 및 신호 처리 장치 |
JP2017152726A (ja) * | 2017-04-25 | 2017-08-31 | 浜松ホトニクス株式会社 | 光検出装置 |
JP7365601B2 (ja) | 2018-03-30 | 2023-10-20 | パナソニックIpマネジメント株式会社 | 光検出器 |
US11888003B2 (en) | 2018-03-30 | 2024-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Photodetector |
JPWO2019189700A1 (ja) * | 2018-03-30 | 2021-04-30 | パナソニックIpマネジメント株式会社 | 光検出器 |
JP2021192452A (ja) * | 2018-03-30 | 2021-12-16 | パナソニックIpマネジメント株式会社 | 光検出器 |
WO2019189700A1 (ja) * | 2018-03-30 | 2019-10-03 | パナソニックIpマネジメント株式会社 | 光検出器 |
US11330205B2 (en) | 2018-08-28 | 2022-05-10 | Panasonic Intellectual Property Management Co., Ltd. | Photosensor, image sensor, and photosensor driving method |
JPWO2020195781A1 (ja) * | 2019-03-28 | 2020-10-01 | ||
WO2020195781A1 (ja) * | 2019-03-28 | 2020-10-01 | パナソニックIpマネジメント株式会社 | 光検出器 |
JP7129664B2 (ja) | 2019-03-28 | 2022-09-02 | パナソニックIpマネジメント株式会社 | 光検出器 |
JP7222851B2 (ja) | 2019-08-29 | 2023-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
JP2021034698A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
JP7328868B2 (ja) | 2019-10-30 | 2023-08-17 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
JP2021072347A (ja) * | 2019-10-30 | 2021-05-06 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
WO2021131651A1 (ja) * | 2019-12-26 | 2021-07-01 | 浜松ホトニクス株式会社 | 測距イメージセンサ及びその製造方法 |
JP6913840B1 (ja) * | 2019-12-26 | 2021-08-04 | 浜松ホトニクス株式会社 | 測距イメージセンサ及びその製造方法 |
WO2021131641A1 (ja) * | 2019-12-26 | 2021-07-01 | 浜松ホトニクス株式会社 | 測距イメージセンサ |
JP6913841B1 (ja) * | 2019-12-26 | 2021-08-04 | 浜松ホトニクス株式会社 | 測距イメージセンサ |
JP2021150359A (ja) * | 2020-03-17 | 2021-09-27 | 株式会社東芝 | 光検出素子、光検出システム、ライダー装置、および移動体 |
WO2021225015A1 (ja) * | 2020-05-08 | 2021-11-11 | 浜松ホトニクス株式会社 | 光センサ |
JP2021177521A (ja) * | 2020-05-08 | 2021-11-11 | 浜松ホトニクス株式会社 | 光センサ |
WO2022210149A1 (ja) * | 2021-03-30 | 2022-10-06 | パナソニックIpマネジメント株式会社 | 固体撮像素子および固体撮像素子の製造方法 |
JP2022169968A (ja) * | 2021-04-28 | 2022-11-10 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び移動体 |
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WO2022254797A1 (ja) * | 2021-06-04 | 2022-12-08 | ソニーセミコンダクタソリューションズ株式会社 | 光検出素子、光検出素子の製造方法、及び電子機器 |
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WO2023190406A1 (ja) * | 2022-03-29 | 2023-10-05 | ラピスセミコンダクタ株式会社 | 半導体装置、固体撮像装置 |
WO2023190407A1 (ja) * | 2022-03-29 | 2023-10-05 | ラピスセミコンダクタ株式会社 | 半導体装置、固体撮像装置 |
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