CN104637970B - 阵列基板及其制作方法、x射线平板探测器、摄像系统 - Google Patents

阵列基板及其制作方法、x射线平板探测器、摄像系统 Download PDF

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CN104637970B
CN104637970B CN201510095303.0A CN201510095303A CN104637970B CN 104637970 B CN104637970 B CN 104637970B CN 201510095303 A CN201510095303 A CN 201510095303A CN 104637970 B CN104637970 B CN 104637970B
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CN104637970A (zh
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舒适
高锦成
徐传祥
张锋
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BOE Technology Group Co Ltd
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Priority to PCT/CN2015/084549 priority patent/WO2016138725A1/zh
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Abstract

本发明提供一种阵列基板及其制作方法、X射线平板探测器和摄像系统，所述阵列基板被划分为多个检测单元，每个所述检测单元内均设置有第一电极和光电转换结构，所述光电转换结构与所述第一电极电连接，其中，所述第一电极和所述光电转换结构之间还包括有能够导电的反射层，所述反射层朝向所述光电转换结构的表面为反射面。本发明的阵列基板能够提高光线的利用率，使得X射线平板探测器的检测精度提高。

Description

阵列基板及其制作方法、X射线平板探测器、摄像系统
技术领域
本发明涉及光电技术领域，具体涉及一种阵列基板及其制作方法、一种包括所述阵列基板的X射线平板探测器，以及包括所述X射线平板探测器的摄像系统。
背景技术
近年来平板探测技术取得飞跃性的发展，平板探测技术可分为直接和间接两类，间接平板探测器其关键部件是获取图像的平板探测器(FPD)，X射线平板探测器包括阵列基板，该阵列基板包括X射线转化层，阵列基板的每个检测单元中包括薄膜晶体管和非晶硅光电二极管。非晶硅光电二极管在反向电压作用下开始工作，当X射线照射阵列基板时，X射线转化层将X射线转化为可见光，再由非晶硅光电二极管将可见光转化为电信号，并进行存储，在驱动电路的作用下，薄膜晶体管被逐行开启，光电二极管所转换的电荷被传输到数据处理电路，数据处理电路会对电信号作进一步的放大、模/数转换等处理，最终获得图像信息。
非晶硅光电二极管中的非晶硅薄膜存在光致衰退效应，导致光电二极管经长时间光照后光电转化效率下降。为了减少光致衰退现象的发生，可以将非晶硅薄膜的厚度减薄，而减薄非晶硅薄膜厚度，入射光不能充分地被吸收，会有大量的光透过光电二极管元件，降低光电二极管的转化效率。
因此，如何提高入射光的利用率成为本发明亟待解决的技术问题。
发明内容
本发明的目的在于提供一种阵列基板及其制作方法、一种包括所述阵列基板的X射线平板探测器和摄像系统，从而提高入射光的利用率。
为了实现上述目的，本发明提供一种阵列基板，所述阵列基板被划分为多个检测单元，每个所述检测单元内均设置有第一电极和光电转换结构，所述光电转换结构与所述第一电极电连接，所述第一电极和所述光电转换结构之间还包括有能够导电的反射层，所述反射层朝向所述光电转换结构的表面为反射面。
优选地，所述反射层为与所述第一电极相连的导电膜层。
优选地，所述反射层与所述第一电极形成为一体结构。
优选地，制成所述第一电极的材料包括能够导电的金属氧化物，所述反射层由对所述第一电极的朝向所述发光转换结构的表面进行还原反应得到的金属单质形成。
优选地，所述金属氧化物为氧化铟锡，所述反射层由对所述氧化铟锡进行还原反应得到的锡单质形成。
优选地，每个所述检测单元中还包括一个薄膜晶体管，所述薄膜晶体管与所述第一电极之间设置有绝缘层，所述绝缘层上与所述薄膜晶体管的源极相对应的位置设置有过孔，所述第一电极通过所述过孔与所述薄膜晶体管的源极相连。
优选地，所述光电转换结构包括光电二极管和第二电极，所述光电二极管的阴极层与所述第一电极相连，所述光电二极管的阳极层与所述第二电极相连。
相应地，本发明还提供一种阵列基板的制作方法，包括：
将阵列基板划分为多个检测单元；
在每个所述检测单元内形成包括第一电极的图形；
形成包括能够导电的反射层的图形；
形成光电转换结构；其中，所述反射层的朝向所述光电转换结构的表面为反射面。
优选地，形成包括能够导电的反射层的图形的步骤包括：
在所述第一电极上方形成导电膜层。
优选地，所述反射层与所述第一电极形成为一体结构。
优选地，形成所述第一电极的材料包括能够导电的金属氧化物，形成包括能够导电的反射层的步骤包括：
向反应腔室通入还原性气体，以使得所述金属氧化物中的部分金属单质析出。
优选地，所述金属氧化物为氧化铟锡。
优选地，所述还原性气体为氢气。
优选地，所述氢气的气体流量为：20～500sccm，通入时间为：10～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的电极功率为：400～800W。
优选地，所述氢气的气体流量为200sccm，通入时间为100s，反应腔室的气压为200mT，反应腔室的用于形成等离子体的电极功率为600W。
优选地，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
在所述薄膜晶体管上方形成绝缘层；
在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
优选地，所述形成光电转换结构的步骤包括：
形成光电二极管，该光电二极管的阴极层与所述第一电极相连；
在所述光电二极管的阳极层上方形成包括透明的第二电极的图形。
相应地，本发明还提供一种X射线平板探测器，包括本发明提供的上述阵列基板和设置在所述阵列基板的光电转换结构上的X射线转换层。
相应地，本发明还提供一种摄像系统，包括本发明提供的上述X射线平板探测器和显示装置。
在本发明中，阵列基板的第一电极和光电转换结构之间设置有反射层，光电转换结构将部分入射光线转换为电信号后，未转换为电信号的其他入射光线经过反射层的反射后会再次经过光电转换结构，以使得光电转换结构再次进行光电转换，从而提高光线的利用率。X射线平板探测器进行X射线探测时，X射线转换层将X射线转换为可见光，由于阵列基板对光线的利用率提高，因此X射线平板探测器检测的灵敏度也相应提高，从而使得摄像系统所显示的图像更加清晰准确。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是本发明的实施方式中X平板探测器的结构示意图；
图2是本发明的实施方式中阵列基板的等效电路示意图。
其中，附图标记为：10、基底；20、第一电极；30、光电转换结构；31、光电二极管；32、第二电极；31a、N型非晶硅膜层；31b、本征非晶硅膜层；31c、P型非晶硅膜层；40、反射层；60、X射线转换层；70、薄膜晶体管；80、绝缘层；91、驱动电路；92、数据处理电路；G、栅线；D、数据线。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的第一个方面，提供一种阵列基板，所述阵列基板被划分为多个检测单元，如图1所示，每个所述检测单元内均设置有第一电极20和光电转换结构30，光电转换结构30与第一电极20电连接，其中，第一电极20和光电转换结构30之间还包括有能够导电的反射层40，反射层40朝向光电转换结构30的表面为反射面。
本发明中，光电转换结构30用于将入射光线转换为电信号，并传输至第一电极20，由于本发明的阵列基板的第一电极20和光电转换结构30之间包括有反射层40，光电转换结构30将部分入射光线转换为电信号后，未转换为电信号的其他入射光线经过反射层40的反射后会再次经过光电转换结构30，以使得光电转换结构30再次进行光电转换，从而提高光线的利用率。
光电转换单元30可以包括光电二极管31，具体地，如图1所示，光电二极管31包括N型非晶硅膜层31a、设置在N型非晶硅膜层31a上方的本征非晶硅膜层31b、设置在本征非晶硅膜层31b上方的P型非晶硅膜层31c。光电二极管31在可见光的照射下产生空穴电子对，电子朝向N型非晶硅膜层移动，空穴朝向P型非晶硅膜层移动。
本发明对反射层40与第一电极20之间的连接形式不作具体限定，作为本发明的一种具体实施方式，反射层40可以为与第一电极20相连的导电膜层。反射层40可以为另形成在第一电极20和光电转换结构30之间的一层反光膜层例如金属反光膜层。例如，可以利用气相沉积的方式在第一电极的上表面形成一层不透光的膜层，未经过光电转换结构30转换的可见光线可以经所述导电膜层反射回光电转换结构30。
作为本发明的第二种具体实施方式，反射层40与第一电极20形成为一体结构。
具体地，制成第一电极20的材料可以包括能够导电的金属氧化物，反射层40由对第一电极20的朝向发光二极管30的表面进行还原反应得到的金属单质层形成，从而避免了引入其他材料作为反射层，简化了制作工艺。
具体地，所述金属氧化物可以为氧化铟锡，反射层40由对所述氧化铟锡进行还原反应得到的锡单质形成。锡单质的析出使得原本透明的第一电极的透光率减小，在第一电极的表面形成为所述反射层，从而可以对入射光线进行漫反射。
进一步地，如图1所示，所述阵列基板的每个检测单元内还包括薄膜晶体管70，该薄膜晶体管70设置在基底10上，薄膜晶体管70与第一电极之间设置有绝缘层80，绝缘层80上与薄膜晶体管70的源极相对应的位置设置有过孔，第一电极20通过所述过孔与薄膜晶体管70的源极相连。本发明对薄膜晶体管70的源极和漏极并没有严格的区分，第一电极20可以与薄膜晶体管70的源极相连，也可以与漏极相连。
如图1所示，光电转换结构30可以包括光电二极管31和第二电极32，光电二极管31的阴极层与第一电极20相连，光电二极管的31的阳极层与第二电极32相连。如上文中所述，光电二极管31可以包括N型非晶硅膜层31a、本征非晶硅膜层31b和P型非晶硅膜层31c。光电二极管31的阴极层即为N型非晶硅膜层31a，阳极层即为P型非晶硅膜层31c。
如图2所示为阵列基板的等效电路示意图，阵列基板上设置有栅线G和数据线D，栅线G和数据线D将阵列基板划分为多个检测单元。当阵列基板工作时，向第二电极32上施加反向电压以开启光电二极管31。一旦有可见光线照射阵列基板，光电二极管31将部分可见光进行光电转换，从而产生电子空穴对。电子在电场的作用下朝向第一电极20移动。在信号读取时，驱动电路91逐行向检测单元提供驱动信号，以逐行开启检测单元内的薄膜晶体管70，使得第一电极20通过薄膜晶体管70的源漏极与数据处理电路92导通，从而检测出第一电极20上的电荷量。
作为本发明的第二个方面，提供一种阵列基板的制作方法，包括：
将阵列基板划分为多个检测单元；
在每个所述检测单元内形成包括第一电极的图形；
形成包括能够导电的反射层的图形；
形成光电转换结构；其中，所述反射层的朝向所述光电转换结构的表面为反射面。
形成包括能够导电的反射层的图形的步骤可以包括：在所述第一电极上方形成导电膜层。具体可以先在第一电极上沉积制作反射层的导电材料，之后通过光刻构图工艺形成包括反射层的图形。
如上文中所述，所述反射层还可以与所述第一电极形成为一体结构。
具体地，形成所述第一电极的材料包括能够导电的金属氧化物，形成包括能够导电的反射层的步骤包括：
向反应腔室通入还原性气体，以使得所述金属氧化物中的部分金属单质析出。
具体地，所述金属氧化物为氧化铟锡。当形成所述第一电极的材料包括氧化铟锡时，所述还原性气体可以为氢气，氢气与氧化铟锡发生还原反应，以使得所述氧化铟锡中的部分锡单质析出，锡单质在第一电极的表面形成为所述反射层。
当然，所述第一电极也可以为其他金属氧化物，如氧化铟锌(IZO)，通入用于还原出锌单质的还原性气体，使得氧化铟锌中的锌单质析出，形成所述反射层。
具体地，向反应腔室内通入氢气时，工艺参数为：氢气的气体流量为：20～500sccm，通入时间为：10～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的电极功率为：400～800W。
在工艺过程中，可以通过调节各个工艺参数来控制所述金属单质的析出状况，例如，通过调节各参数使得析出金属单质后，第一电极和金属单质形成的一体结构的光透过率为未析出金属单质时第一电极的光透过率的20％～30％。
优选地，所述氢气的气体流量为200sccm，通入时间为100s，反应腔室的气压为200mT，反应腔室的用于形成等离子体的电极功率为600W。
进一步地，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
在所述薄膜晶体管上方形成绝缘层；
在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
具体地，首先，在基底上形成包括栅极的图形。即在基底上形成栅金属层，然后通过构图工艺形成包括栅极的图形。所述阵列基板还可以包括栅线，所述栅线可以和栅极同步形成；
然后，形成包括源极和漏极的图形。形成栅极后，可以先沉积栅极绝缘层，然后在栅极绝缘层上形成源漏金属层，再通过光刻构图工艺形成源、漏电极；
再次，形成绝缘层，并在绝缘层上对应于源极的位置形成过孔，该过孔用于连接第一电极和源极。在形成第一电极时，首先沉积第一电极材料层，由于过孔设置在对应于源极的位置，因此第一电极材料层会通过过孔与源极相连，之后通过光刻构图工艺形成包括第一电极的图形。
如上文所述，光电转换结构可以包括第二电极和光电二极管，所述形成光电转换结构的步骤可以包括：
形成光电二极管，该光电二极管的阴极层与所述第一电极相连；具体可以依次形成N型非晶硅膜层、本征非晶硅膜层、P型非晶硅膜层，然后通过光刻构图工艺形成光电二极管。
在所述光电二级管的阳极层上方形成包括透明的第二电极的图形。
以上为对本发明的提供的阵列基板及其制作方法的描述，可以看出，本发明的第一电极和光电转换结构之间设置有反射层，经过光电二极管的入射光线经过反射层的反射后会再次经过光电转换结构，从而提供光线的利用率。并且，本发明可以通过还原性气体将第一电极中的金属单质析出形成反射层，因此不需要引入其他的材料来制作反射层，简化了制作工艺，同时，反射层还可以对薄膜晶体管进行遮挡，无需制作额外的遮光层来保护薄膜晶体管，降低了制作成本。
作为本发明的第三个方面，提供一种X射线平板探测器，包括上述阵列基板和设置在所述阵列基板的光电转换结构上的X射线转换层60(如图1所示)。
X射线转换层60为包括闪烁体的膜层，所述闪烁体经过X射线曝光后能够将X射线光子转换为可见光，所述闪烁体可以为碘化铯。
当X射线照射所述X射线平板探测器时，X射线转化层可以将X射线转化为可见光，每个检测单元内的光电转换结构可以将所述可见光转换为电信号。阵列基板的驱动电路通过提供驱动信号逐行打开阵列基板上的薄膜晶体管，从而逐行检测阵列基板上的检测单元的信号。由于本发明所提供的阵列基板可以提高光线的利用率，因此包括所述阵列基板的X射线平板探测器的检测精度也相应提高。
作为本发明的第四个方面，提供一种摄像系统，包括上述X射线平板探测器和显示装置。该摄像系统应用于医疗检查中，X射线平板探测器所检测的电信号可以传输至控制装置(如计算机)中，控制装置将电信号转换为图像信号，并控制显示装置进行显示相应的图像，从而直观地看出X射线的分布。由于本发明中的X射线平板探测器的检测精度较高，因此所述摄像系统中所显示的图像更加清晰准确。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (4)

1.一种阵列基板的制作方法，其特征在于，包括：
将阵列基板划分为多个检测单元；
在每个所述检测单元内形成包括第一电极的图形，形成所述第一电极的材料包括氧化铟锡；
形成包括能够导电的反射层的图形；
形成光电转换结构；其中，所述反射层与所述第一电极形成为一体结构，所述反射层的朝向所述光电转换结构的表面为反射面；
形成包括能够导电的反射层的步骤包括：
向反应腔室通入氢气，以使得所述氧化铟锡中的部分金属单质析出；所述氢气的气体流量为：20～500sccm，通入时间为：100～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的电极功率为：400～800W。
2.根据权利要求1所述的制作方法，其特征在于，所述氢气的气体流量为200sccm，通入时间为100s，反应腔室的气压为200mT，反应腔室的用于形成等离子体的电极功率为600W。
3.根据权利要求1或2所述的制作方法，其特征在于，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
在所述薄膜晶体管上方形成绝缘层；
在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
4.根据权利要求1或2所述的制作方法，其特征在于，所述形成光电转换结构的步骤包括：
形成光电二极管，该光电二极管的阴极层与所述第一电极相连；
在所述光电二极管的阳极层上方形成包括透明的第二电极的图形。
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