CN106847986A - X射线平板探测器及其制备方法 - Google Patents

X射线平板探测器及其制备方法 Download PDF

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CN106847986A
CN106847986A CN201710099045.2A CN201710099045A CN106847986A CN 106847986 A CN106847986 A CN 106847986A CN 201710099045 A CN201710099045 A CN 201710099045A CN 106847986 A CN106847986 A CN 106847986A
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thin film
flat panel
tft
panel detector
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田慧
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BOE Technology Group Co Ltd
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Priority to PCT/CN2017/103971 priority patent/WO2018153095A1/zh
Priority to US15/767,584 priority patent/US20190058001A1/en
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Abstract

本发明提供了一种X射线平板探测器及其制造方法。X射线平板探测器包括基底、设置在基底上的薄膜晶体管、设置在绝缘层上且与薄膜晶体管竖行设置的感光器件、设置在感光器件上的闪烁层。本发明通过感光器件与薄膜晶体管竖行设置，使得感光面积的增大不受薄膜晶体管的限制，且感光面积与闪烁层和像素区域的面积相同，最大限度地提高了探测效率和分辨率。通过采用量子点薄膜作为光敏层，利用量子点材料在紫外可见光谱区具有较强而且较宽范围光吸收的特点，增强了对闪烁层产生的紫外可见光的吸收。本发明X射线平板探测器具有高探测效率和高分辨率的优点，且制备工艺简单，生产成本低。

Description

X射线平板探测器及其制备方法
技术领域
本发明涉及探测技术领域，具体涉及一种X射线平板探测器及其制备方法。
背景技术
目前，数字化摄影技术被广泛应用于医疗仪器，如拍摄X射线胸片的X射线机。X射线机的关键部件是获取图像的平板探测器(Flat Panel Detector，FPD)，其作用是将X射线转化为数字图像信号。由于非晶硅型平板探测器具有光电转换能力好且性能稳定等优点，因此近年来非晶硅型平板探测技术取得飞跃性的发展。
非晶硅(a-Si)型平板探测器是一种间接转换型探测器，主体结构包括薄膜晶体管(Thin Film Transistor，TFT)、光电二极管和闪烁层。其中，闪烁层用于将X射线转换为可见光，光电二极管用于将可见光转换为电荷载流子并存储，薄膜晶体管起到开关的作用，在外接扫描控制电路的控制下薄膜晶体管被逐行开启，光电二极管所存储的电荷载流子被读取并传输到数据处理电路。
图1为现有非晶硅型平板探测器的结构示意图。如图1所示，平板探测器的主体结构包括基底10，设置在基底10上的薄膜晶体管11，与薄膜晶体管11基本上处于同一水平面上的光电二极管12，覆盖薄膜晶体管11和光电二极管12的绝缘层13，以及形成在绝缘层13上的闪烁层14。通常，薄膜晶体管11包括栅极、栅绝缘层、有源层和源漏电极，光电二极管包括P型区域、N型区域以及介于P型区域和N型区域之间的本征区域，N型区域与薄膜晶体管的漏电极连接。其工作原理是，X射线被处于其路径上的人体调制，调制后的X射线R由闪烁层14转换为可见光L，可见光L被光电二极管12吸收并转换成电荷载流子，电荷载流子存储在存储电容或者光电二极管的自身电容中形成图像电荷，由外接扫描控制电路顺序接通每一行薄膜晶体管11，以一行同时读出的方式将图像电荷输出到外部数据处理电路。经每一薄膜晶体管11读出的图像电荷量对应于入射X射线的剂量，通过外部数据处理电路处理可以确定每一像素点的电荷量，进而确定每一像素点的X射线剂量。
如图1所示的现有非晶硅型平板探测器，由于光电二极管和薄膜晶体管并行设置，光电二极管布置在像素区域，使得平板探测器的信噪比和分辨率相互制约。如果光电二极管的感光面积较小，导致信噪比较低，探测效率降低；如果增大光电二极管的感光面积，则致使像素区域面积增加，导致分辨率下降。
随着数字X射线成像系统应用在医疗及工业等专业领域的持续发展，传统结构的非晶硅平板探测器将难以满足未来的需求，具有较高探测量子效率和分辨率的平板探测技术已经成为医疗领域最迫切的需求之一。
发明内容
本发明实施例所要解决的技术问题是，提供一种X射线平板探测器及其制备方法，克服现有X射线平板探测器存在信噪比和分辨率相互制约的缺陷，提高探测效率和分辨率。
为了解决上述技术问题，本发明实施例提供了一种X射线平板探测器，包括：
基底；
薄膜晶体管，设置在所述基底上，用于输出感测信号；
绝缘层，覆盖所述薄膜晶体管；
感光器件，设置在所述绝缘层上，与所述薄膜晶体管竖行设置，用于通过量子点薄膜吸收可见光并将可见光转换成感测信号；
闪烁层，设置在所述感光器件上，用于将X射线转换为可见光。
可选地，所述感光器件包括：
感测电极，设置在所述绝缘层上，与所述薄膜晶体管的漏电极连接，用于感测电荷载流子并生成感测信号；
复合绝缘层，覆盖所述感测电极；
量子点薄膜，设置在所述复合绝缘层上，用于吸收可见光并转换成电荷载流子。
可选地，所述感光器件还包括驱动电极和金属引线。
可选地，所述驱动电极和金属引线与所述感测电极设置在同一层。
可选地，所述量子点薄膜为碲化镉薄膜或碲化镉/硫化镉薄膜，厚度为100～300nm。
可选地，所述闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um。
可选地，所述复合绝缘层为有机无机复合绝缘层，厚度为100～300nm。
本发明实施例还提供了一种X射线成像系统，包括上述的X射线平板探测器。
本发明实施例还提供了一种X射线平板探测器的制备方法，包括：
在基底上制备薄膜晶体管及绝缘层；
在所述绝缘层上制备感光器件；
在所述感光器件上制备闪烁层。
可选地，所述在所述绝缘层上制备感光器件包括：
通过构图工艺在绝缘层上制备感测电极和驱动电极，感测电极与薄膜晶体管的漏电极连接；
制备复合绝缘层和量子点薄膜。
可选地，所述复合绝缘层为有机无机复合绝缘层，厚度为100～300nm；所述量子点薄膜为碲化镉薄膜或碲化镉/硫化镉薄膜，厚度为100～300nm；所述闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um。
本发明实施例提供了一种X射线平板探测器及其制造方法，通过感光器件与薄膜晶体管竖行设置，使得感光面积的增大不受薄膜晶体管的限制，且感光面积与闪烁层和像素区域的面积相同，最大限度地提高了探测效率和分辨率。进一步地，通过采用量子点薄膜作为光敏层，利用量子点材料在紫外可见光谱区具有较强而且较宽范围光吸收的特点，增强了对闪烁层产生的紫外可见光的吸收，即使采用较薄的量子点薄膜，也能实现较高的电荷载流子，进一步提高了信噪比。在使用低剂量X射线时，本发明实施例X射线平板探测器具有高探测效率和高分辨率的优点，且制备工艺简单，生产成本低。
当然，实施本发明的任一产品或方法并不一定需要同时达到以上所述的所有优点。本发明的其它特征和优点将在随后的说明书实施例中阐述，并且，部分地从说明书实施例中变得显而易见，或者通过实施本发明而了解。本发明实施例的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解，并且构成说明书的一部分，与本申请的实施例一起用于解释本发明的技术方案，并不构成对本发明技术方案的限制。附图中各部件的形状和大小不反映真实比例，目的只是示意说明本发明内容。
图1为现有非晶硅型平板探测器的结构示意图；
图2为本发明实施例X射线平板探测器的结构示意图；
图3为本发明实施例X射线平板探测器像素结构的示意图；
图4为量子点薄膜的吸收光谱图；
图5为本发明实施例X射线平板探测器制备方法的流程图。
附图标记说明:
1—栅线； 2—数据线； 3—像素区域；
10—基底； 11—薄膜晶体管； 12—光电二极管；
13—绝缘层； 14—闪烁层； 15—感光器件；
16—钝化层； 150—金属引线； 151—感测电极；
152—驱动电极； 153—复合绝缘层； 154—量子点薄膜；
具体实施方式
下面结合附图和实施例对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互任意组合。
针对现有X射线平板探测器存在的信噪比和分辨率相互制约的技术缺陷，本发明实施例提供了一种X射线平板探测器。图2为本发明实施例X射线平板探测器的结构示意图。如图2所示，X射线平板探测器的主体结构包括基底10以及在基底10依次形成的薄膜晶体管11、绝缘层13、感光器件15和闪烁层14。具体地，薄膜晶体管11设置在基底10上，绝缘层13覆盖薄膜晶体管11，感光器件15设置在绝缘层13上且与薄膜晶体管11竖行设置，采用量子点薄膜作为光敏层吸收可见光，感光器件15上设置有钝化层16，闪烁层14设置在钝化层16上。本实施例中，薄膜晶体管包括栅极、栅绝缘层、有源层和源漏电极，感光器件15包括感测电极151、驱动电极152、复合绝缘层153和量子点薄膜154，感测电极151和驱动电极152设置在覆盖薄膜晶体管11的绝缘层13上，感测电极151通过绝缘层13上开设的绝缘层过孔与薄膜晶体管11的漏电极连接，复合绝缘层153覆盖感测电极151和驱动电极152，量子点薄膜154设置在复合绝缘层153上。本实施例X射线平板探测器的工作过程为，闪烁层14将X射线R转换为可见光L，感光器件15中作为光敏层的量子点薄膜154吸收可见光L并转换成电荷载流子，感光器件15中的感测电极151感知量子点薄膜154的电荷载流子，生成感测信号，在薄膜晶体管11打开时，该感测信号被读出并输出到外部数据处理电路。其中，驱动电极152用于提供电压信号配合感测电极151感知量子点薄膜154的电荷载流子。
本实施例中，感光器件与薄膜晶体管竖行设置是指，感光器件与薄膜晶体管两者在垂直于基底的方向上依次设置，分别设置在不同的结构层中，使得感光器件在水平方向上的位置设置不受薄膜晶体管位置的影响，感光器件中感光面积的大小也不受薄膜晶体管位置的影响。实际实施时，感光器件的部分器件与薄膜晶体管两者既可以是在垂直方向上对齐，也可以是在垂直方向上有重叠。由于感光器件与薄膜晶体管竖行设置，使得感光器件的量子点薄膜可以具有较大的感光面积。本实施例中，作为光敏层的量子点薄膜的面积与闪烁层的面积相同，闪烁层转换的可见光基本上被量子点薄膜接收，信噪比高，具有较高的探测效率。理论上，量子点薄膜的面积与一个像素区域的面积基本上相同，因而可以实现高分辨率。因此，相对于采用光电二极管与薄膜晶体管并行设置的现有结构，本实施例X射线平板探测器能够同时具有高探测效率和高分辨率。同时，较大面积的量子点薄膜可以采用基于溶液的涂覆方法制备，简化了制备工艺，降低生产成本。
图3为本发明实施例X射线平板探测器像素结构的示意图。如图3所示，X射线平板探测器包括形成在基底上的多条栅线1和多条数据线2，各行栅线1与各列数据线2垂直相交，在基底上形成矩阵排列的多个像素区域3，每个像素区域3设置薄膜晶体管和感光器件。栅线1用于向对应的薄膜晶体管提供扫描信号，响应于栅线扫描信号，薄膜晶体管导通，从而将来自感光器件的感测信号发送到数据线2，数据线2将感测信号输出到外部数据处理电路。
本实施例中，量子点薄膜可以采用CdTe或者CdTe/CdS等，厚度为100～300nm。量子点(Quantum Dots，QDs)又称为纳米晶，是一种由II-VI族或III-V族元素组成的纳米颗粒，其三个维度的尺寸都在100nm以下。由于其内部电子在各方向上的运动都受到局限，所以量子限域效应(Quantum Confinement Effect)特别显著，受光激发可产生电荷载流子。图4为量子点薄膜的吸收光谱图，示意出了碲化镉CdTe、碲化镉/硫化镉CdTe/CdS的吸光光谱，从图4可以看出，CdTe、CdTe/CdS在紫外可见光谱区具有较强且较宽范围的光吸收度。本实施例通过采用量子点薄膜作为光敏层，利用量子点材料在紫外可见光谱区具有较强而且较宽范围光吸收的特点，增强了对闪烁层产生的紫外可见光的吸收，从而能够产生更多的电荷，即使采用较薄的量子点薄膜，也能实现较高的光电流。
本实施例中，基底可以采用玻璃基板、硅片以及聚酰亚胺PI塑料基板等；驱动电极和感应电极可以采用Mo、Al等金属及其合金，也可以采用Ag纳米线、石墨烯等材料，厚度为30～200nm；闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um；钝化层可以采用氮化硅SiNx或氧化硅SiO2等。复合绝缘层为有机无机复合绝缘层，即一层有机绝缘层和一层无机绝缘层组成复合绝缘层，复合绝缘层可以采用PI/SiNx复合薄膜或PI/SiO2薄膜，厚度为100～300nm。通过在感测电极与量子点薄膜之间设置复合绝缘层，可以更有效地降低量子点薄膜的漏电流，而量子点薄膜中漏电流的有效降低，可以使得量子点薄膜具有更低的噪声和更高的信噪比，具有更高的探测效率。
在具体实施时，驱动电极和感测电极可以处于同一层，如图2所示，也可以处于不同层。例如，感测电极151设置在绝缘层13上，而驱动电极152设置在复合绝缘层153上。此外，本实施例X射线平板探测器还可以包括一条或多条金属引线150，金属引线150用于将驱动电极152连接至一个或多个集成电路。金属引线150可以与驱动电极152处于同一层，如图2所示，也可以与驱动电极152处于不同层，当金属引线150与驱动电极152处于不同层时，金属引线150通过一个或多个过孔连接至驱动电极152。
下面通过X射线平板探测器的制备过程进一步说明本实施例的技术方案。
图5为本发明实施例X射线平板探测器制备方法的流程图。如图5所示，本实施例X射线平板探测器制备方法包括：
S10、在基底上制备薄膜晶体管及绝缘层；
S20、在所述绝缘层上制备感光器件；
S30、在所述感光器件上制备闪烁层。
本实施例中，首先通过构图工艺制备在基底上制备薄膜晶体管，薄膜晶体管包括栅极、栅绝缘层、有源层和源漏电极，然后通过构图工艺制备绝缘层和绝缘层过孔，绝缘层覆盖薄膜晶体管，绝缘层过孔位于漏电极位置。之后，在制备有薄膜晶体管和绝缘层的基板上，通过构图工艺制备感光器件，感光器件包括感测电极、驱动电极、复合绝缘层和量子点薄膜，且感光器件的感测电极通过绝缘层过孔与薄膜晶体管的漏电极连接。最后，在制备有感光器件的基板上制备闪烁层。本实施例中所说的“构图工艺”包括沉积膜层、涂覆光刻胶、掩模曝光、显影、刻蚀、剥离光刻胶等处理，是现有成熟的制备工艺，各膜层材料、工艺、参数等均是已知的。
其中，在基底上制备薄膜晶体管和绝缘层可以采用现有成熟的工艺方法。例如四次构图法，通过第一次构图工艺在基底上形成栅电极和栅线，通过第二次构图工艺形成栅绝缘层和有源层，通过第三次构图工艺形成源漏电极和数据线，通过第四次构图工艺形成绝缘层过孔，绝缘层过孔位于漏电极位置。本实施例对薄膜晶体管的源电极和漏电极并没有严格的区分，绝缘层过孔可以位于漏电极位置，使感测电极通过绝缘层过孔与薄膜晶体管的漏电极连接，绝缘层过孔可以位于源电极位置，使感测电极通过绝缘层过孔与薄膜晶体管的源电极连接。基底可以采用玻璃基板、硅片以及PI塑料基板等，有源层包括但不限于非晶硅、多晶硅、金属氧化物等，有源层也可以由非晶硅层和掺杂非晶硅层(又称为欧姆接触层)构成。具体实施时，制备薄膜晶体管还可以采用二次或三次构图法，这里不作具体限定。
其中，在所述绝缘层上制备感光器件包括：
S21、通过构图工艺在绝缘层上制备感测电极和驱动电极，感测电极与薄膜晶体管的漏电极连接；
S22、制备复合绝缘层和量子点薄膜。
本实施例中，通过构图工艺在绝缘层上制备感测电极和驱动电极包括：在绝缘层上沉积一层金属薄膜，在金属薄膜上涂覆一层光刻胶，使用掩膜版对光刻胶进行曝光并显影，去除感测电极和驱动电极位置以外区域的光刻胶，即暴露出感测电极和驱动电极位置以外区域的金属薄膜，通过刻蚀工艺刻蚀掉暴露的金属薄膜，剥离光刻胶后形成感测电极和驱动电极。具体实施时，还可以同时形成金属引线。其中，沉积可采用磁控溅射、蒸镀、化学气相沉积等已知工艺，涂覆可采用已知的涂覆工艺，刻蚀可采用已知的方法，在此不做具体的限定。本实施例中，金属薄膜可以采用Mo、Al等金属及其合金，也可以采用Ag纳米线、石墨烯等材料，厚度为30～200nm。
本实施例中，复合绝缘层为有机无机复合绝缘层。制备复合绝缘层包括：先沉积一层有机绝缘层，有机绝缘层可以采用PI，然后沉积一层无机绝缘层，无机绝缘层可以采用SiNx或SiO2，形成厚度为100～300nm的有机无机复合绝缘层。
本实施例中，量子点薄膜可以采用CdTe或者CdTe/CdS等，厚度为100～300nm。量子点薄膜可以采用涂覆方式涂覆于复合绝缘层上，涂覆方式包括旋涂、喷墨打印、气溶胶打印、激光诱导转印、纳米压印或狭缝涂布等，为本领域技术人员所熟知的技术，在此不详细描述。
其中，在所述感光器件上制备闪烁层包括：先在量子点薄膜上沉积一层钝化层，然后在钝化层上制备一层闪烁层。本实施例中，钝化层可以采用SiNx或SiO2，闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um。具体实施时，可以使用任何适当的闪烁材料制备闪烁层，闪烁材料为将X射线转换成可见光的光波长转换材料。制备钝化层时，还可以同时制备金属引线保护层。
基于同一发明构思，本发明实施例还提供了一种X射线成像系统，包括上述X射线平板探测器。该X射线成像系统应用于医疗检查中，X射线平板探测器所检测的信号可以传输至控制装置(如计算机)中，控制装置将信号转换为图像信号，并控制显示装置进行显示相应的图像，从而直观地看出X射线的分布。由于本发明实施例X射线平板探测器的检测精度高，因此所述摄像系统中所显示的图像更加清晰准确。
本发明实施例提供的X射线平板探测器及其制造方法，通过感光器件与薄膜晶体管竖行设置，使得感光面积的增大不受薄膜晶体管的限制，且感光面积与闪烁层和像素区域的面积相同，最大限度地提高了探测效率和分辨率。进一步地，通过采用量子点薄膜作为光敏层，利用量子点材料在紫外可见光谱区具有较强而且较宽范围光吸收的特点，增强了对闪烁层产生的紫外可见光的吸收，即使采用较薄的量子点薄膜，也能实现较高的电荷载流子，进一步提高了信噪比。在使用低剂量X射线时，本发明实施例X射线平板探测器具有高探测效率和高分辨率的优点，且制备工艺简单，生产成本低。
在本发明实施例的描述中，需要理解的是，术语“中部”、“上”、“下”、“前”、“后”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明实施例的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
虽然本发明所揭露的实施方式如上，但所述的内容仅为便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (11)

1.一种X射线平板探测器，其特征在于，包括：
基底；
薄膜晶体管，设置在所述基底上，用于输出感测信号；
绝缘层，覆盖所述薄膜晶体管；
感光器件，设置在所述绝缘层上，与所述薄膜晶体管竖行设置，用于通过量子点薄膜吸收可见光并将可见光转换成感测信号；
闪烁层，设置在所述感光器件上，用于将X射线转换为可见光。
2.根据权利要求1所述的X射线平板探测器，其特征在于，所述感光器件包括：
感测电极，设置在所述绝缘层上，与所述薄膜晶体管的漏电极连接，用于感测电荷载流子并生成感测信号；
复合绝缘层，覆盖所述感测电极；
量子点薄膜，设置在所述复合绝缘层上，用于吸收可见光并转换成电荷载流子。
3.根据权利要求2所述的X射线平板探测器，其特征在于，所述感光器件还包括驱动电极和金属引线。
4.根据权利要求3所述的X射线平板探测器，其特征在于，所述驱动电极和金属引线与所述感测电极设置在同一层。
5.根据权利要求2所述的X射线平板探测器，其特征在于，所述量子点薄膜为碲化镉薄膜或碲化镉/硫化镉薄膜，厚度为100～300nm。
6.根据权利要求2所述的X射线平板探测器，其特征在于，所述闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um。
7.根据权利要求2所述的X射线平板探测器，其特征在于，所述复合绝缘层为有机无机复合绝缘层，厚度为100～300nm。
8.一种X射线成像系统，其特征在于，包括如权利要求1～7任一所述的X射线平板探测器。
9.一种X射线平板探测器的制备方法，其特征在于，包括：
在基底上制备薄膜晶体管及绝缘层；
在所述绝缘层上制备感光器件；
在所述感光器件上制备闪烁层。
10.根据权利要求9所述的制备方法，其特征在于，所述在所述绝缘层上制备感光器件包括：
通过构图工艺在绝缘层上制备感测电极和驱动电极，感测电极与薄膜晶体管的漏电极连接；
制备复合绝缘层和量子点薄膜。
11.根据权利要求10所述的制备方法，其特征在于，所述复合绝缘层为有机无机复合绝缘层，厚度为100～300nm；所述量子点薄膜为碲化镉薄膜或碲化镉/硫化镉薄膜，厚度为100～300nm；所述闪烁层为碘化铯闪烁层，采用柱状排列的晶体阵列，厚度为400～600um。
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