IT1402264B1 - Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode - Google Patents

Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode

Info

Publication number
IT1402264B1
IT1402264B1 ITVA2010A000069A ITVA20100069A IT1402264B1 IT 1402264 B1 IT1402264 B1 IT 1402264B1 IT VA2010A000069 A ITVA2010A000069 A IT VA2010A000069A IT VA20100069 A ITVA20100069 A IT VA20100069A IT 1402264 B1 IT1402264 B1 IT 1402264B1
Authority
IT
Italy
Prior art keywords
photographor
geiger
pixel
vacuum
mode
Prior art date
Application number
ITVA2010A000069A
Other languages
English (en)
Inventor
Massimo Cataldo Mazzillo
Giovanni Condorelli
Delfo Nunziato Sanfilippo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITVA2010A000069A priority Critical patent/IT1402264B1/it
Priority to US13/233,172 priority patent/US9121766B2/en
Publication of ITVA20100069A1 publication Critical patent/ITVA20100069A1/it
Application granted granted Critical
Publication of IT1402264B1 publication Critical patent/IT1402264B1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
ITVA2010A000069A 2010-09-16 2010-09-16 Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode IT1402264B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITVA2010A000069A IT1402264B1 (it) 2010-09-16 2010-09-16 Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode
US13/233,172 US9121766B2 (en) 2010-09-16 2011-09-15 Multi pixel photo detector array of Geiger mode avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2010A000069A IT1402264B1 (it) 2010-09-16 2010-09-16 Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode

Publications (2)

Publication Number Publication Date
ITVA20100069A1 ITVA20100069A1 (it) 2012-03-17
IT1402264B1 true IT1402264B1 (it) 2013-08-28

Family

ID=43739206

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA2010A000069A IT1402264B1 (it) 2010-09-16 2010-09-16 Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode

Country Status (2)

Country Link
US (1) US9121766B2 (it)
IT (1) IT1402264B1 (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8350208B1 (en) * 2010-01-21 2013-01-08 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Two-terminal multi-color photodetectors and focal plane arrays
US9184194B2 (en) 2011-12-21 2015-11-10 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Multiband photodetector utilizing serially connected unipolar and bipolar devices
US8937285B2 (en) * 2012-06-18 2015-01-20 General Electric Company Methods and systems for signal communication in gamma ray detectors
US9411049B2 (en) 2013-01-09 2016-08-09 Stmicroelectronics S.R.L. Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions
US9677931B2 (en) 2013-04-24 2017-06-13 Koninklijke Philips N.V. Detection of radiation quanta using an optical detector pixel array and pixel cell trigger state sensing circuits
US9182506B2 (en) * 2013-06-28 2015-11-10 General Electric Company Methods and systems for signal communication in gamma ray detectors
CN105765737B (zh) 2013-08-13 2017-05-31 泽克泰克光子学有限公司 多像素雪崩光电二极管
US9869781B2 (en) * 2013-11-22 2018-01-16 General Electric Company Active pulse shaping of solid state photomultiplier signals
US9271694B2 (en) * 2013-12-18 2016-03-01 General Electric Company System and method of simplifying a direct control scheme for a detector
WO2015157341A1 (en) * 2014-04-07 2015-10-15 Samsung Electronics Co., Ltd. High resolution, high frame rate, low power image sensor
US9927537B2 (en) * 2014-12-15 2018-03-27 General Electric Company Systems and methods for positron emission tomography signal isolation
US9529079B1 (en) 2015-03-26 2016-12-27 Google Inc. Multiplexed multichannel photodetector
CN105137450A (zh) * 2015-08-10 2015-12-09 哈尔滨工业大学 低虚警双Gm-APD探测器光子计数激光雷达
JP6650261B2 (ja) * 2015-12-21 2020-02-19 浜松ホトニクス株式会社 光電変換素子
JP6543565B2 (ja) * 2015-12-21 2019-07-10 浜松ホトニクス株式会社 光電変換素子及び光電変換モジュール
JP6734644B2 (ja) * 2015-12-21 2020-08-05 浜松ホトニクス株式会社 光電変換装置
US10371835B2 (en) 2016-01-11 2019-08-06 General Electric Company Microcell interconnection in silicon photomultipliers
JP2019075394A (ja) 2017-10-12 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、電子装置
CN108828616B (zh) * 2018-06-12 2022-06-28 南京理工大学 可实现单脉冲测距的光子计数激光雷达及恒虚警控制方法
JP2023032298A (ja) * 2021-08-26 2023-03-09 キヤノン株式会社 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム
US11435451B1 (en) 2021-10-14 2022-09-06 Motional Ad Llc SiPM based sensor for low level fusion
US11428791B1 (en) 2021-10-14 2022-08-30 Motional Ad Llc Dual-mode silicon photomultiplier based LiDAR
CN114966806A (zh) * 2022-04-11 2022-08-30 苏州瑞派宁科技有限公司 亚像素成像方法、装置、成像设备、探测器及存储介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188056B1 (en) * 1998-06-24 2001-02-13 Stmicroelectronics, Inc. Solid state optical imaging pixel with resistive load
CN101484999B (zh) * 2006-07-03 2011-09-14 浜松光子学株式会社 光电二极管阵列
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1399075B1 (it) 2010-03-23 2013-04-05 St Microelectronics Srl Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione

Also Published As

Publication number Publication date
ITVA20100069A1 (it) 2012-03-17
US20120068050A1 (en) 2012-03-22
US9121766B2 (en) 2015-09-01

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