JP2016063138A - 紫外線センサ及び紫外線検出装置 - Google Patents
紫外線センサ及び紫外線検出装置 Download PDFInfo
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- JP2016063138A JP2016063138A JP2014191379A JP2014191379A JP2016063138A JP 2016063138 A JP2016063138 A JP 2016063138A JP 2014191379 A JP2014191379 A JP 2014191379A JP 2014191379 A JP2014191379 A JP 2014191379A JP 2016063138 A JP2016063138 A JP 2016063138A
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- 238000001514 detection method Methods 0.000 claims abstract description 64
- 238000010791 quenching Methods 0.000 claims abstract description 30
- 230000000171 quenching effect Effects 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 19
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 13
- -1 polyparaxylylene Polymers 0.000 claims description 13
- 238000000825 ultraviolet detection Methods 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 4
- 238000003491 array Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 23
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (8)
- 第一方向に交互に配置されている、それぞれ複数の第一画素領域と第二画素領域とを有するシリコンフォトダイオードアレイと、
紫外域における検出対象波長域での透過率を下げるフィルタ膜と、
前記複数の第一画素領域の出力に接続される第一出力端と、
前記複数の第二画素領域の出力に接続される第二出力端と、を備え、
前記フィルタ膜は、各前記第二画素領域上を除き、かつ、各前記第一画素領域を覆うように、各前記第一画素領域上に形成されており、
各前記第一画素領域と各前記第二画素領域とは、ガイガーモードで動作するアバランシェフォトダイオードと、アバランシェフォトダイオードに対して直列に接続されているクエンチング抵抗と、を有する少なくとも一つの画素をそれぞれ含み、
前記複数の第一画素領域に含まれる各前記クエンチング抵抗は、第一信号線を介して、前記第一出力端に接続され、
前記複数の第二画素領域に含まれる各前記クエンチング抵抗は、第二信号線を介して、前記第二出力端に接続されている、紫外線センサ。 - 前記複数の第一画素領域と前記複数の第二画素領域とは、二次元配置されていると共に、前記第一方向に直交する第二方向にも交互に配置されている、請求項1に記載の紫外線センサ。
- 前記フィルタ膜は、ポリパラキシリレン樹脂にて構成されている、請求項1又は2に記載の紫外線センサ。
- 前記シリコンフォトダイオードアレイに対向するように配置され、入射光を集める集光レンズを更に備えている、請求項1〜3のいずれか一項に記載の紫外線センサ。
- 前記シリコンフォトダイオードアレイに対向するように配置され、入射光を散乱させて出射させる散乱部を更に備えている、請求項1〜4のいずれか一項に記載の紫外線センサ。
- 前記シリコンフォトダイオードアレイに対向するように配置され、前記シリコンフォトダイオードアレイに入射する可視域の波長の光を遮断するフィルタを更に備えている、請求項1〜5のいずれか一項に記載の紫外線センサ。
- 前記シリコンフォトダイオードアレイは、絶縁層を介してエピタキシャル半導体層が形成されているシリコン半導体基板を有し、
前記アバランシェフォトダイオードは、前記エピタキシャル半導体層に形成されている、請求項1〜6のいずれか一項に記載の紫外線センサ。 - 請求項1〜7のいずれか一項に記載の紫外線センサを備え、
前記第一出力端からの出力と前記第二出力端からの出力との差分に基づいて、紫外域における検出対象波長域の光を検出する、紫外線検出装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014191379A JP6386847B2 (ja) | 2014-09-19 | 2014-09-19 | 紫外線センサ及び紫外線検出装置 |
US14/855,968 US9620662B2 (en) | 2014-09-19 | 2015-09-16 | Ultraviolet sensor and ultraviolet detecting device |
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JP2014191379A JP6386847B2 (ja) | 2014-09-19 | 2014-09-19 | 紫外線センサ及び紫外線検出装置 |
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JP2016063138A true JP2016063138A (ja) | 2016-04-25 |
JP6386847B2 JP6386847B2 (ja) | 2018-09-05 |
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JP (1) | JP6386847B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016017701A1 (ja) * | 2014-07-31 | 2016-02-04 | 富士フイルム株式会社 | 紫外線感知シート、紫外線感知セットおよび紫外線感知方法 |
CN106992216B (zh) * | 2017-04-01 | 2019-09-10 | 中蕊(武汉)光电科技有限公司 | 一种深紫外光电器件封装结构 |
JP2019047037A (ja) | 2017-09-05 | 2019-03-22 | 株式会社東芝 | 光検出器 |
JP6862386B2 (ja) | 2018-03-22 | 2021-04-21 | 株式会社東芝 | 光検出器、ライダー装置、及び光検出器の製造方法 |
CN113259557B (zh) * | 2021-05-08 | 2023-08-29 | 北京优彩科技有限公司 | 一种紫外图像传感器及紫外成像装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59161046U (ja) * | 1983-04-14 | 1984-10-29 | クラリオン株式会社 | 無指向性光検出器 |
JPH0216498A (ja) * | 1988-07-04 | 1990-01-19 | Hamamatsu Photonics Kk | 放射線像拡大観察装置 |
JPH02278883A (ja) * | 1989-03-16 | 1990-11-15 | Landis & Gyr Betrieps Ag | 紫外線フォトダイオード |
JP2002005737A (ja) * | 2000-06-20 | 2002-01-09 | Komatsu Ltd | 光検出装置 |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
JP2008103614A (ja) * | 2006-10-20 | 2008-05-01 | Mitsui Eng & Shipbuild Co Ltd | 光電変換デバイス |
US20110272561A1 (en) * | 2010-03-23 | 2011-11-10 | Stmicroelectronics S.R.L. | Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process |
JP2014112048A (ja) * | 2012-12-05 | 2014-06-19 | Rohm Co Ltd | 光検出装置およびオートライト装置 |
Family Cites Families (6)
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JPS63129837U (ja) | 1987-02-18 | 1988-08-24 | ||
JPH09229763A (ja) | 1996-02-22 | 1997-09-05 | Osaka Gas Co Ltd | 火炎センサ |
US8259293B2 (en) * | 2007-03-15 | 2012-09-04 | Johns Hopkins University | Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system |
DE102007024074B4 (de) * | 2007-05-22 | 2022-09-15 | Leica Microsystems Cms Gmbh | Mikroskop |
DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
US8860166B2 (en) * | 2010-03-23 | 2014-10-14 | Stmicroelectronics S.R.L. | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
-
2014
- 2014-09-19 JP JP2014191379A patent/JP6386847B2/ja active Active
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- 2015-09-16 US US14/855,968 patent/US9620662B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59161046U (ja) * | 1983-04-14 | 1984-10-29 | クラリオン株式会社 | 無指向性光検出器 |
JPH0216498A (ja) * | 1988-07-04 | 1990-01-19 | Hamamatsu Photonics Kk | 放射線像拡大観察装置 |
JPH02278883A (ja) * | 1989-03-16 | 1990-11-15 | Landis & Gyr Betrieps Ag | 紫外線フォトダイオード |
JP2002005737A (ja) * | 2000-06-20 | 2002-01-09 | Komatsu Ltd | 光検出装置 |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
JP2008103614A (ja) * | 2006-10-20 | 2008-05-01 | Mitsui Eng & Shipbuild Co Ltd | 光電変換デバイス |
US20110272561A1 (en) * | 2010-03-23 | 2011-11-10 | Stmicroelectronics S.R.L. | Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process |
JP2014112048A (ja) * | 2012-12-05 | 2014-06-19 | Rohm Co Ltd | 光検出装置およびオートライト装置 |
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JP6386847B2 (ja) | 2018-09-05 |
US9620662B2 (en) | 2017-04-11 |
US20160086989A1 (en) | 2016-03-24 |
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