WO2013058001A1 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
- Publication number
- WO2013058001A1 WO2013058001A1 PCT/JP2012/069727 JP2012069727W WO2013058001A1 WO 2013058001 A1 WO2013058001 A1 WO 2013058001A1 JP 2012069727 W JP2012069727 W JP 2012069727W WO 2013058001 A1 WO2013058001 A1 WO 2013058001A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- semiconductor
- main surface
- semiconductor substrate
- semiconductor region
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 214
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 238000010791 quenching Methods 0.000 claims abstract description 50
- 230000000171 quenching effect Effects 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 19
- 239000011521 glass Substances 0.000 description 16
- 101100243945 Fusarium vanettenii PDAT9 gene Proteins 0.000 description 8
- 208000012204 PDA1 Diseases 0.000 description 8
- 101150102492 pda1 gene Proteins 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 101001072191 Homo sapiens Protein disulfide-isomerase A2 Proteins 0.000 description 5
- 102100036351 Protein disulfide-isomerase A2 Human genes 0.000 description 5
- 208000030825 patent ductus arteriosus 2 Diseases 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Definitions
- the present invention relates to a photodetection device.
- a front-illuminated photodiode array (semiconductor photodetecting element) having a plurality of avalanche photodiodes operating in Geiger mode and a quenching resistor connected in series to each avalanche photodiode is known.
- a quenching resistor is provided on a semiconductor substrate on which an avalanche photodiode constituting each pixel is formed.
- the quenching resistor is disposed on the light incident surface (front surface) side of the semiconductor substrate. For this reason, the aperture ratio has to be lowered by the space where the quenching resistor is arranged, and there is a limit to the improvement of the aperture ratio.
- the quenching resistor is disposed on the surface (back surface) side facing the light incident surface of the semiconductor substrate.
- the size of each pixel may be small due to factors such as an increase in the number of pixels.
- the multiplication region formed when each avalanche photodiode operates in the Geiger mode is located in the active region. As a result, the aperture ratio has to be lowered by the amount that the quenching resistor is disposed outside the active region.
- An object of the present invention is to provide a photodetection device capable of remarkably improving the aperture ratio.
- the present invention relates to a photodetection device, a semiconductor photodetection element having a semiconductor substrate including first and second main surfaces facing each other, a second photodetection element disposed opposite to the semiconductor photodetection element, A semiconductor substrate having a third main surface facing the surface, the semiconductor photodetector operating in Geiger mode and a plurality of avalanche photodiodes formed in the semiconductor substrate, and for each avalanche photodiode And a first electrode disposed on the second main surface side of the semiconductor substrate, and the mounting substrate is disposed on the third main surface side corresponding to each first electrode.
- a second electrode and a quenching circuit electrically connected to each second electrode and disposed on the third main surface side, the first electrode, and the first electrode Corresponding second electrode , They are coupled with each other through the bump electrode.
- the quenching circuit is arranged not on the semiconductor substrate of the semiconductor photodetecting element but on the mounting substrate. Therefore, each avalanche photodiode is formed on the semiconductor substrate without considering the space for arranging the quenching circuit. As a result, the aperture ratio of the light detection device (semiconductor light detection element) can be significantly improved.
- each avalanche photodiode is formed in the first conductor semiconductor substrate, the second conductivity type first semiconductor region formed on the first main surface side of the semiconductor substrate, and the first semiconductor region.
- a through-electrode that penetrates the avalanche photodiode from the first main surface side to the second main surface side and electrically connects the corresponding third electrode and the first electrode is formed. It may be. In this case, the aperture ratio can be remarkably improved even when a front-illuminated semiconductor photodetecting element is used.
- the third electrode and the first electrode are electrically connected through the through electrode, the third electrode, the through electrode, the first electrode, the bump electrode, and the second electrode from the second semiconductor region through the second electrode
- the wiring distance to the quenching circuit is relatively short. Therefore, the influence of the resistance and capacitance of the wiring is suppressed, and the time resolution is improved.
- each avalanche photodiode has a PN junction between a semiconductor substrate of a first conductor, a first semiconductor region of a second conductivity type formed on the second main surface side of the semiconductor substrate, and the first semiconductor region. And a second semiconductor region of a first conductivity type having a higher impurity concentration than the semiconductor substrate, and the first semiconductor region and the first electrode may be electrically connected.
- the aperture ratio can be remarkably improved even when a back-illuminated semiconductor photodetecting element is used.
- the first electrode and the second electrode are electrically connected via the bump electrode, the wiring distance from the first semiconductor region to the quenching circuit is extremely short. Therefore, the influence of the resistance and capacitance of the wiring is remarkably suppressed, and the time resolution is further improved.
- the mounting board may further include a common electrode to which a quenching circuit is connected in parallel.
- a quenching circuit quenching circuit
- each avalanche photodiode (quenching circuit) can be connected in parallel without increasing the wiring distance.
- the quenching circuit may be a passive quenching circuit or an active quenching circuit.
- FIG. 1 is a schematic perspective view showing a photodetection device according to an embodiment of the present invention.
- FIG. 2 is a diagram for explaining a cross-sectional configuration of the photodetecting device according to the present embodiment.
- FIG. 3 is a schematic plan view of the semiconductor photodetecting element.
- FIG. 4 is a schematic plan view of the semiconductor photodetecting element.
- FIG. 5 is a schematic plan view of the mounting substrate.
- FIG. 6 is a circuit diagram of the photodetector.
- FIG. 7 is a diagram for explaining a cross-sectional configuration of a photodetection device according to a modification of the present embodiment.
- FIG. 8 is a schematic plan view of the semiconductor photodetector element.
- FIG. 9 is a diagram for explaining a cross-sectional configuration of a light detection device according to a modification of the present embodiment.
- FIG. 10 is a schematic plan view of the mounting substrate.
- FIG. 1 is a schematic perspective view showing a photodetecting device according to the present embodiment.
- FIG. 2 is a diagram for explaining a cross-sectional configuration of the photodetecting device according to the present embodiment.
- 3 and 4 are schematic plan views of the semiconductor photodetector element.
- FIG. 5 is a schematic plan view of the mounting substrate.
- FIG. 6 is a circuit diagram of the photodetector.
- the photodetecting device 1 includes a semiconductor photodetecting element 10A, a mounting substrate 20, and a glass substrate 30, as shown in FIGS.
- the mounting substrate 20 is disposed to face the semiconductor photodetecting element 10A.
- the glass substrate 30 is disposed to face the semiconductor photodetecting element 10A.
- the semiconductor photodetecting element 10 ⁇ / b> A is disposed between the mounting substrate 20 and the glass substrate 30.
- the semiconductor photodetecting element 10A is composed of a front-illuminated photodiode array PDA1.
- the photodiode array PDA1 has a semiconductor substrate 1N that has a rectangular shape in plan view.
- the semiconductor substrate 1N includes a main surface 1Na and a main surface 1Nb facing each other.
- the semiconductor substrate 1N is an N-type (first conductivity type) semiconductor substrate made of Si.
- the photodiode array PDA1 includes a plurality of avalanche photodiodes APD formed on the semiconductor substrate 1N.
- One avalanche photodiode APD constitutes one pixel in the photodiode array PDA1.
- the avalanche photodiodes APD are all connected in parallel with being connected in series with the quenching resistor R1, and a reverse bias voltage is applied from the power supply.
- the output current from the avalanche photodiode APD is detected by a signal processing unit SP described later.
- Each avalanche photodiode APD has a P-type (second conductivity type) first semiconductor region 1PA and a P-type (second conductivity type) second semiconductor region 1PB.
- the first semiconductor region 1PA is formed on the main surface 1Na side of the semiconductor substrate 1N.
- the second semiconductor region 1PB is formed in the first semiconductor region 1PA and has a higher impurity concentration than the first semiconductor region 1PA.
- the planar shape of the second semiconductor region 1PB is, for example, a polygon (in this embodiment, an octagon).
- the depth of the first semiconductor region 1PA is deeper than that of the second semiconductor region 1PB.
- the semiconductor substrate 1N has an N-type (first conductivity type) semiconductor region 1PC.
- the semiconductor region 1PC is formed on the main surface 1Na side of the semiconductor substrate 1N.
- the semiconductor region 1PC prevents a PN junction formed between the N-type semiconductor substrate 1N and the P-type first semiconductor region 1PA from being exposed to a through-hole TH in which a later-described through-electrode TE is disposed.
- the semiconductor region 1PC is formed at a position corresponding to the through hole TH (through electrode TE).
- the avalanche photodiode APD has an electrode E1 arranged on the main surface 1Na side of the semiconductor substrate 1N as shown in FIG.
- the electrode E1 is connected to the second semiconductor region 1PB.
- the electrode E1 is disposed on the semiconductor substrate 1N outside the second semiconductor region 1PB as viewed from the main surface 1Na side via the insulating layer L1. In FIG. 3, the description of the insulating layer L1 shown in FIG. 2 is omitted for clarity of the structure.
- the first semiconductor region 1PA is electrically connected to the electrode E1 through the second semiconductor region 1PB.
- the avalanche photodiode APD includes electrodes (not shown) electrically connected to the semiconductor substrate 1N, respectively disposed on the main surface 1Nb side of the semiconductor substrate 1N, an electrode E5, And an electrode E7 connected to the electrode E5.
- the electrode E5 is disposed on the semiconductor substrate 1N outside the second semiconductor region 1PB as viewed from the main surface 1Nb side via the insulating layer L2.
- the electrode E7 is disposed on the semiconductor substrate 1N overlapping with the second semiconductor region 1PB when viewed from the main surface 1Nb side via the insulating layer L2. That is, the electrode E7 is disposed on a region corresponding to the second semiconductor region 1PB on the main surface 1Nb.
- the description of the passivation film PF shown in FIG. 2 is omitted for clarity of the structure.
- the photodiode array PDA1 includes a plurality of through electrodes TE.
- the through electrode TE is provided for each individual avalanche photodiode APD.
- the through electrode TE is formed so as to penetrate the semiconductor substrate 1N from the main surface 1Na side to the main surface 1Nb side. That is, the through electrode TE is disposed in the through hole TH that penetrates the semiconductor substrate 1N.
- the insulating layer L2 is also formed in the through hole TH. Therefore, the through electrode TE is disposed in the through hole TH via the insulating layer L2.
- the through electrode TE has one end connected to the electrode E1 and the other end connected to the electrode E5.
- the second semiconductor region 1PB is electrically connected to the electrode E7 via the electrode E1, the through electrode TE, and the electrode E5.
- the through electrode TE is disposed in a region between the avalanche photodiodes APD in plan view.
- the avalanche photodiodes APD are two-dimensionally arranged in M rows in the first direction and N columns (M and N are natural numbers) in the second direction orthogonal to the first direction.
- the through electrode TE is formed in a region surrounded by four avalanche photodiodes APD. Since the through electrodes TE are provided for each avalanche photodiode APD, they are two-dimensionally arranged in M rows in the first direction and N columns in the second direction.
- the electrodes E1, E5, E7 and the through electrode TE are made of a metal such as aluminum.
- the semiconductor substrate is made of Si, AuGe / Ni or the like is often used as the electrode material in addition to aluminum.
- the electrode E5, the electrode E7, and the through electrode TE can be integrally formed.
- a sputtering method can be used as a method of forming the electrodes E1, E5, E7 and the through electrode TE.
- a Group 3 element such as B is used as the P-type impurity, and a Group 5 element such as N, P, or As is used as the N-type impurity. Even if N-type and P-type semiconductors are substituted for each other to form an element, the element can function.
- a diffusion method or an ion implantation method can be used as a method for adding these impurities.
- SiO 2 or SiN can be used as a material of the insulating layers L1 and L2.
- SiO 2 or SiN can be used as a material of the insulating layers L1 and L2.
- the mounting substrate 20 has a main surface 20a and a main surface 20b facing each other.
- the mounting substrate 20 has a rectangular shape in plan view.
- Main surface 20a is opposed to main surface 1Nb of semiconductor substrate 1N.
- the mounting substrate 20 includes a plurality of electrodes E9 arranged on the main surface 20a side. As shown in FIGS. 2 and 6, the electrode E9 is disposed corresponding to the through electrode TE. Specifically, the electrode E9 is formed on each region of the main surface 20a facing the electrode E7.
- the side surface 1Nc of the semiconductor substrate 1N and the side surface 20c of the mounting substrate 20 are flush with each other.
- the outer edge of the semiconductor substrate 1N and the outer edge of the mounting substrate 20 coincide with each other in plan view.
- the electrode E7 and the electrode E9 are connected by a bump electrode BE.
- the through electrode TE is electrically connected to the electrode E9 via the electrode E5, the electrode E7, and the bump electrode BE.
- the second semiconductor region 1PB is electrically connected to the electrode E9 via the electrode E1, the through electrode TE, the electrode E5, the electrode E7, and the bump electrode BE.
- the electrode E9 is also made of a metal such as aluminum like the electrodes E1, E5, E7 and the through electrode TE.
- As an electrode material AuGe / Ni or the like may be used in addition to aluminum.
- the bump electrode BE is made of, for example, solder.
- the bump electrode BE is formed on the electrode E7 via an unillustrated UBM (Under Bump Metal).
- the UBM is made of a material that is electrically and physically connected to the bump electrode BE.
- An electroless plating method can be used as a method for forming the UBM.
- a method for forming the bump electrode BE a method of mounting a solder ball or a printing method can be used.
- the mounting board 20 includes a plurality of quenching resistors R1 and a signal processing unit SP, as shown in FIG.
- the mounting board 20 constitutes an ASIC (Application Specific Integrated Circuit).
- ASIC Application Specific Integrated Circuit
- FIG. 5 the description of the passivation film PF shown in FIG. 2 is omitted for clarity of the structure.
- the quenching resistor R1 is disposed on the main surface 20a side.
- the quenching resistor R1 has one end electrically connected to the electrode E9 and the other end connected to the common electrode CE.
- the quenching resistor R1 constitutes a passive quenching circuit.
- a quenching resistor R1 is connected in parallel to the common electrode CE.
- the signal processor SP is disposed on the main surface 20a side.
- the signal processing unit SP has an input end electrically connected to the electrode E9 and an output end connected to the signal line TL.
- An output signal from each avalanche photodiode APD is input to the signal processing unit SP via the electrode E1, the through electrode TE, the electrode E5, the electrode E7, the bump electrode BE, and the electrode E9.
- the signal processing unit SP processes an output signal from each avalanche photodiode APD.
- the signal processing unit SP includes a CMOS circuit that converts an output signal from each avalanche photodiode APD into a digital pulse.
- a passivation film PF having openings formed at positions corresponding to the bump electrodes BE is disposed on the main surface 1Nb side of the semiconductor substrate 1N and the main surface 20a side of the mounting substrate 20.
- the passivation film PF is made of SiN, for example.
- a CVD (Chemical Vapor Deposition) method can be used as a method of forming the passivation film PF.
- the glass substrate 30 has a main surface 30a and a main surface 30b facing each other.
- the glass substrate 30 has a rectangular shape in plan view.
- Main surface 30a faces main surface 1Nb of semiconductor substrate 1N.
- the main surface 30b is flat. In the present embodiment, the main surface 30a is also flat.
- the glass substrate 30 and the semiconductor photodetecting element 10A are optically connected by an optical adhesive OA.
- the glass substrate 30 may be directly formed on the semiconductor photodetecting element 10A.
- a scintillator is optically connected to the main surface 30b of the glass substrate 30 by an optical adhesive.
- the scintillation light from the scintillator passes through the glass substrate 30 and enters the semiconductor photodetecting element 10A.
- the side surface 1Nc of the semiconductor substrate 1N and the side surface 30c of the glass substrate 30 are flush with each other as shown in FIG. In other words, the outer edge of the semiconductor substrate 1N and the outer edge of the glass substrate 30 coincide with each other in plan view.
- an avalanche photodiode APD is formed by forming a PN junction between the N-type semiconductor substrate 1N and the P-type first semiconductor region 1PA. Yes.
- the semiconductor substrate 1N is electrically connected to an electrode (not shown) formed on the back surface of the substrate 1N, and the first semiconductor region 1PA is connected to the electrode E1 through the second semiconductor region 1PB.
- the quenching resistor R1 is connected in series with the avalanche photodiode APD (see FIG. 6).
- each avalanche photodiode APD is operated in the Geiger mode.
- a reverse voltage (reverse bias voltage) larger than the breakdown voltage of the avalanche photodiode APD is applied between the anode and the cathode of the avalanche photodiode APD. That is, the ( ⁇ ) potential V1 is applied to the anode and the (+) potential V2 is applied to the cathode.
- the polarities of these potentials are relative, and one of the potentials can be a ground potential.
- the anode is a P-type first semiconductor region 1PA
- the cathode is an N-type semiconductor substrate 1N.
- light (photons) enters the avalanche photodiode APD photoelectric conversion is performed inside the substrate to generate photoelectrons.
- Avalanche multiplication is performed in a region near the PN junction interface of the first semiconductor region 1PA, and the amplified electron group flows toward an electrode formed on the back surface of the semiconductor substrate 1N.
- the quenching resistor R1 is arranged on the mounting substrate 20 instead of the semiconductor substrate 1N of the semiconductor photodetector 10A. Therefore, each avalanche photodiode APD is formed in the semiconductor substrate 1N without considering the space for disposing the quenching resistor R1. As a result, the aperture ratio of the light detection device 1 (semiconductor light detection element 10A) can be remarkably improved.
- Each avalanche photodiode APD has a semiconductor substrate 1N, a first semiconductor region 1PA, a second semiconductor region 1PB, and an electrode E1 electrically connected to the second semiconductor region 1PB.
- a penetrating electrode TE penetrating from the main surface 1Na side to the main surface 1Nb side and electrically connecting the corresponding electrode E1 and electrode E5 is formed.
- the electrode E1 and the electrode E5 are electrically connected through the through electrode TE, the second semiconductor region 1PB through the electrode E1, the through electrode TE, the electrodes E5 and E7, the bump electrode BE, and the electrode E9.
- To the quenching resistance R1 is relatively short. Therefore, in the photodetector 1, the influence of the resistance and capacitance of the wiring from the second semiconductor region 1PB to the quenching resistor R1 is suppressed, and the time resolution is improved.
- the mounting substrate 20 includes a common electrode CE to which a quenching resistor R1 is connected in parallel. Thereby, each avalanche photodiode APD (quenching resistor R1) can be connected in parallel without increasing the wiring distance.
- the mechanical strength of the semiconductor substrate 1N can be increased by the glass substrate 30 disposed to face the semiconductor photodetector 10A. This is particularly effective when the semiconductor substrate 1N is thinned.
- FIG. 7 is a diagram for explaining a cross-sectional configuration of a photodetection device according to a modification of the present embodiment.
- FIG. 8 is a schematic plan view of the semiconductor photodetector element.
- the photodetection device 1 includes a semiconductor photodetection element 10B, a mounting substrate 20, and a glass substrate 30, as shown in FIGS.
- the mounting substrate 20 is disposed to face the semiconductor photodetecting element 10B.
- the glass substrate 30 is disposed to face the semiconductor photodetecting element 10B.
- the semiconductor photodetecting element 10 ⁇ / b> B is disposed between the mounting substrate 20 and the glass substrate 30.
- the semiconductor photodetecting element 10B is composed of a back-illuminated photodiode array PDA2.
- the photodiode array PDA2 has a semiconductor substrate 2N that has a rectangular shape in plan view.
- the semiconductor substrate 2N includes a main surface 2Na and a main surface 2Nb facing each other.
- the semiconductor substrate 2N is a P-type (first conductivity type) semiconductor substrate made of Si.
- the semiconductor substrate 2N is electrically connected to an electrode (not shown) formed on the main surface 2Nb side of the substrate 1N.
- the photodiode array PDA2 includes a plurality of avalanche photodiodes APD formed on the semiconductor substrate 2N.
- One avalanche photodiode APD constitutes one pixel in the photodiode array PDA2.
- Each avalanche photodiode APD has an N-type (first conductivity type) first semiconductor region 2PA and a P-type (second conductivity type) second semiconductor region 2PB.
- the first semiconductor region 2PA is formed on the main surface 2Nb side of the semiconductor substrate 2N.
- the second semiconductor region 2PB forms a PN junction with the first semiconductor region 2PA and has an impurity concentration higher than that of the semiconductor substrate 2N.
- the planar shape of the first semiconductor region 2PA is, for example, a polygon (in this embodiment, an octagon).
- the first semiconductor region 2PA functions as a cathode layer, and the second semiconductor region 2PB functions as a multiplication layer.
- An accumulation layer and an insulating layer are disposed on the main surface 2Na side of the semiconductor substrate 2N (both not shown).
- the accumulation layer is formed by ion-implanting or diffusing P-type impurities in the semiconductor substrate 2N from the main surface 2Na side so as to have an impurity concentration higher than that of the semiconductor substrate 2N.
- the insulating layer is formed on the accumulation layer.
- the material of the insulating layer SiO 2 or SiN can be used.
- As a method for forming the insulating layer if the insulating layer is made of SiO 2 may be used a thermal oxidation method or a sputtering method.
- the avalanche photodiode APD has an electrode E11 disposed on the main surface 2Nb side of the semiconductor substrate 2N as shown in FIG.
- the electrode E11 is connected to the first semiconductor region 2PA.
- the electrode E11 is disposed on the semiconductor substrate 2N corresponding to the first semiconductor region 2PA through the insulating layer L4 when viewed from the main surface 2Nb side.
- the description of the insulating layer L4 and the passivation film PF shown in FIG. 2 is omitted for clarification of the structure.
- the electrode E11 and the electrode E9 are connected by a bump electrode BE. Thereby, the first semiconductor region 2PA is electrically connected to the electrode E9 via the electrode E11 and the bump electrode BE.
- the electrode E11 is also made of a metal such as aluminum, like the electrode E9. As an electrode material, AuGe / Ni or the like may be used in addition to aluminum.
- the quenching resistor R1 is arranged on the mounting substrate 20 instead of the semiconductor substrate 2N of the semiconductor photodetector 10B. Therefore, each avalanche photodiode APD is formed in the semiconductor substrate 2N without considering the space for disposing the quenching resistor R1. As a result, the aperture ratio of the light detection device 1 (semiconductor light detection element 10B) can be significantly improved.
- Each avalanche photodiode APD has a semiconductor substrate 2N, a first semiconductor region 2PA, and a second semiconductor region 2PB, and the first semiconductor region 2PA and the electrode E9 are electrically connected. Thereby, even when the back-illuminated semiconductor photodetecting element 10B is used, the aperture ratio can be remarkably improved.
- the electrode E11 and the electrode E9 are electrically connected via the bump electrode BE, the wiring distance from the first semiconductor region 2PA to the quenching resistor R1 is extremely short. Therefore, the influence of the resistance and capacitance of the wiring from the first semiconductor region 2PA to the quenching resistor R1 is remarkably suppressed, and the time resolution is further improved.
- the mechanical strength of the semiconductor substrate 2N can be increased by the glass substrate 30 disposed opposite to the semiconductor photodetector 10B. This is particularly effective when the semiconductor substrate 2N is thinned.
- the region where the plurality of avalanche photodiodes APD are formed is thinned from the main surface 2Na side, and the region where the plurality of avalanche photodiodes APD are formed in the semiconductor substrate 2N.
- the part corresponding to is removed.
- the semiconductor substrate 2N exists as a frame portion.
- the removal of the semiconductor substrate 2N can be performed by etching (for example, dry etching) or polishing.
- an accumulation layer AC and an insulating layer L5 are arranged on the main surface 2Na side of the semiconductor substrate 2N.
- Accumulation layer AC is formed by ion-implanting or diffusing P-type impurities in semiconductor substrate 2N from the main surface 2Na side so as to have a higher impurity concentration than semiconductor substrate 2N.
- the insulating layer L5 is formed on the accumulation layer AC.
- SiO 2 or SiN can be used.
- As a method for forming the insulating layer L5, when the insulating layer L5 is formed of SiO 2 may be used a thermal oxidation method or a sputtering method.
- the mounting substrate 20 may include an active quenching circuit AQ as shown in FIG. 10 instead of the passive quenching circuit (quenching resistor).
- the active quenching circuit AQ also functions as the signal processing unit SP and includes a CMOS circuit.
- a common electrode CE and a signal line TL are connected to each active quenching circuit AQ.
- the active quenching circuit AQ converts the output signal from each avalanche photodiode APD into a digital pulse, and performs the ON / OFF operation of the MOS using the converted digital pulse to perform the forced drop of the voltage and the reset operation. Do. Since the mounting substrate 20 includes the active quenching circuit AQ, the voltage recovery time when the semiconductor photodetector elements 10A and 10B operate in the Geiger mode can be reduced.
- the shape of the first and second semiconductor regions 1PB, 1PB, 2PA, 2PB is not limited to the shape described above, and may be another shape (for example, a circular shape).
- the number (number of rows and number of columns) and arrangement of the avalanche photodiodes APD formed on the semiconductor substrates 1N and 2N are not limited to those described above.
- the present invention can be used for a light detection device that detects weak light.
- SYMBOLS 1 Photodetector, 1N, 2N ... Semiconductor substrate, 1Na, 1Nb, 2Na, 2Nb ... Main surface, 1PA ... First semiconductor region, 1PB ... Second semiconductor region, 2PA ... First semiconductor region, 2PB ... Second semiconductor Area: 10A, 10B ... Semiconductor photodetecting element, 20 ... Mounting substrate, 20a, 20b ... Main surface, APD ... Avalanche photodiode, AQ ... Active quenching circuit, BE ... Bump electrode, CE ... Common electrode, E1, E5 E7, E9, E11 ... electrodes, PDA1, PDA2 ... photodiode array, R1 ... quenching resistor, TE ... penetrating electrode.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (5)
- 光検出装置であって、
互いに対向する第一及び第二主面を含む半導体基板を有する半導体光検出素子と、
前記半導体光検出素子に対向配置されると共に、前記半導体基板の前記第二主面と対向する第三主面を有する搭載基板と、を備え、
前記半導体光検出素子は、ガイガーモードで動作すると共に半導体基板内に形成された複数のアバランシェフォトダイオードと、それぞれの前記アバランシェフォトダイオードに対して電気的に接続されると共に前記半導体基板の前記第二主面側に配置された第一電極と、を含み、
前記搭載基板は、前記第一電極毎に対応して前記第三主面側に配置された複数の第二電極と、それぞれの前記第二電極に対して電気的に接続されると共に前記第三主面側に配置されたクエンチング回路と、を含んでおり、
前記第一電極と、該第一電極に対応する前記第二電極と、がバンプ電極を介して接続されている。 - 請求項1に記載の光検出装置であって、
各前記アバランシェフォトダイオードは、
第一導電体の前記半導体基板と、
前記半導体基板の前記第一主面側に形成された第二導電型の第一半導体領域と、
前記第一半導体領域内に形成され且つ前記第一半導体領域よりも不純物濃度が高い第二導電型の第二半導体領域と、
前記半導体基板の前記第一主面側に配置され且つ前記第二半導体領域に電気的に接続された第三電極と、を有し、
前記半導体基板には、前記アバランシェフォトダイオード毎に、前記第一主面側から前記第二主面側まで貫通し且つ対応する前記第三電極と前記第一電極とを電気的に接続する貫通電極が形成されている。 - 請求項1に記載の光検出装置であって、
各前記アバランシェフォトダイオードは、
第一導電体の前記半導体基板と、
前記半導体基板の前記第二主面側に形成された第二導電型の第一半導体領域と、
前記第一半導体領域とでPN接合を構成し且つ前記半導体基板よりも不純物濃度が高い第一導電型の第二半導体領域と、を有し、
前記第一半導体領域と前記第一電極とが電気的に接続されている。 - 請求項1~3のいずれか一項に記載の光検出装置であって、
前記搭載基板は、前記クエンチング回路が並列に接続されたコモン電極を更に含んでいる。 - 請求項1~4のいずれか一項に記載の光検出装置であって、
前記クエンチング回路が、パッシブクエンチング回路又はアクティブクエンチング回路である。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112012004412.6T DE112012004412T8 (de) | 2011-10-21 | 2012-08-02 | Lichterfassungsvorrichtung |
US14/350,647 US9368528B2 (en) | 2011-10-21 | 2012-08-02 | Light detection device having a semiconductor light detection element and a mounting substrate with quenching circuits |
CN201280051817.0A CN103890972B (zh) | 2011-10-21 | 2012-08-02 | 光检测装置 |
US15/150,859 US9768222B2 (en) | 2011-10-21 | 2016-05-10 | Light detection device including a semiconductor light detection element, a mounting substrate, and quenching circuits wherein the first electrodes of the light detection element corresponding to the second electrodes of the mounting substrate are electrically connected through bump electrodes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011232109A JP5926921B2 (ja) | 2011-10-21 | 2011-10-21 | 光検出装置 |
JP2011-232109 | 2011-10-21 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/350,647 A-371-Of-International US9368528B2 (en) | 2011-10-21 | 2012-08-02 | Light detection device having a semiconductor light detection element and a mounting substrate with quenching circuits |
US15/150,859 Continuation US9768222B2 (en) | 2011-10-21 | 2016-05-10 | Light detection device including a semiconductor light detection element, a mounting substrate, and quenching circuits wherein the first electrodes of the light detection element corresponding to the second electrodes of the mounting substrate are electrically connected through bump electrodes |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013058001A1 true WO2013058001A1 (ja) | 2013-04-25 |
Family
ID=48140658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/069727 WO2013058001A1 (ja) | 2011-10-21 | 2012-08-02 | 光検出装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9368528B2 (ja) |
JP (1) | JP5926921B2 (ja) |
CN (2) | CN105870244B (ja) |
DE (1) | DE112012004412T8 (ja) |
TW (2) | TWI569429B (ja) |
WO (1) | WO2013058001A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150115131A1 (en) * | 2013-10-28 | 2015-04-30 | Omnivision Technologies, Inc. | Stacked chip spad image sensor |
JP2016062996A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 光検出器 |
WO2021172071A1 (ja) * | 2020-02-28 | 2021-09-02 | 浜松ホトニクス株式会社 | 光検出装置 |
US11374043B2 (en) * | 2016-07-27 | 2022-06-28 | Hamamatsu Photonics K.K. | Photodetection device with matrix array of avalanche diodes |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5832852B2 (ja) * | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5791461B2 (ja) | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
CN104752340B (zh) * | 2013-12-31 | 2018-05-01 | 上海丽恒光微电子科技有限公司 | 雪崩光电二极管阵列装置及形成方法、激光三维成像装置 |
JP6193171B2 (ja) | 2014-04-11 | 2017-09-06 | 株式会社東芝 | 光検出器 |
CN105655435B (zh) * | 2014-11-14 | 2018-08-07 | 苏州瑞派宁科技有限公司 | 光电转换器、探测器及扫描设备 |
CN105842706B (zh) * | 2015-01-14 | 2019-02-22 | 上海丽恒光微电子科技有限公司 | 激光三维成像装置及其制造方法 |
JP6755855B2 (ja) | 2015-03-31 | 2020-09-16 | 浜松ホトニクス株式会社 | 半導体装置 |
JP6474892B2 (ja) * | 2015-04-28 | 2019-02-27 | オリンパス株式会社 | 半導体装置 |
WO2018021413A1 (ja) | 2016-07-27 | 2018-02-01 | 浜松ホトニクス株式会社 | 光検出装置 |
JP6701135B2 (ja) | 2016-10-13 | 2020-05-27 | キヤノン株式会社 | 光検出装置および光検出システム |
EP3309847B1 (en) | 2016-10-13 | 2024-06-05 | Canon Kabushiki Kaisha | Photo-detection apparatus and photo-detection system |
JP6712215B2 (ja) | 2016-11-11 | 2020-06-17 | 浜松ホトニクス株式会社 | 光検出装置 |
JP6431574B1 (ja) * | 2017-07-12 | 2018-11-28 | 浜松ホトニクス株式会社 | 電子管 |
JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
JP6860467B2 (ja) * | 2017-10-26 | 2021-04-14 | ソニーセミコンダクタソリューションズ株式会社 | フォトダイオード、画素回路、および、フォトダイオードの製造方法 |
KR20200110782A (ko) * | 2018-01-26 | 2020-09-25 | 하마마츠 포토닉스 가부시키가이샤 | 광 검출 장치 |
JP6878338B2 (ja) * | 2018-03-14 | 2021-05-26 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
JP2019212684A (ja) * | 2018-05-31 | 2019-12-12 | 株式会社クオンタムドライブ | 可視光無線通信用の受光装置 |
JP7454917B2 (ja) | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
JP2020073889A (ja) * | 2019-12-04 | 2020-05-14 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
CN113782510B (zh) * | 2021-11-12 | 2022-04-01 | 深圳市灵明光子科技有限公司 | 一种3d堆叠芯片的键合键布设结构 |
JP2024028045A (ja) * | 2022-08-19 | 2024-03-01 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびx線ct装置 |
WO2004019411A1 (ja) * | 2002-08-09 | 2004-03-04 | Hamamatsu Photonics K.K. | フォトダイオードアレイ、その製造方法、及び放射線検出器 |
JP2004165602A (ja) * | 2002-09-24 | 2004-06-10 | Hamamatsu Photonics Kk | 半導体装置及びその製造方法 |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2411542C2 (ru) * | 2005-04-22 | 2011-02-10 | Конинклейке Филипс Электроникс Н.В. | Цифровой кремниевый фотоумножитель для врп-пэт |
GB2426575A (en) * | 2005-05-27 | 2006-11-29 | Sensl Technologies Ltd | Photon detector using controlled sequences of reset and discharge of a capacitor to sense photons |
RU2416840C2 (ru) * | 2006-02-01 | 2011-04-20 | Конинклейке Филипс Электроникс, Н.В. | Лавинный фотодиод в режиме счетчика гейгера |
DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
TW200950109A (en) | 2008-05-21 | 2009-12-01 | Univ Nat Formosa | UV inspector for zinc oxide nano-pillar |
DE102009017505B4 (de) * | 2008-11-21 | 2014-07-10 | Ketek Gmbh | Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors |
US8017902B2 (en) * | 2008-12-12 | 2011-09-13 | Infineon Technologies Ag | Detector |
JP2010283223A (ja) | 2009-06-05 | 2010-12-16 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
JP5297276B2 (ja) | 2009-06-18 | 2013-09-25 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5600690B2 (ja) * | 2010-01-15 | 2014-10-01 | 浜松ホトニクス株式会社 | アバランシェフォトダイオード及びその製造方法 |
US8860166B2 (en) * | 2010-03-23 | 2014-10-14 | Stmicroelectronics S.R.L. | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
CN102024863B (zh) * | 2010-10-11 | 2013-03-27 | 湘潭大学 | 高速增强型紫外硅选择性雪崩光电二极管及其制作方法 |
JP5562207B2 (ja) * | 2010-10-29 | 2014-07-30 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5832852B2 (ja) * | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
-
2011
- 2011-10-21 JP JP2011232109A patent/JP5926921B2/ja active Active
-
2012
- 2012-08-02 CN CN201610280956.0A patent/CN105870244B/zh active Active
- 2012-08-02 WO PCT/JP2012/069727 patent/WO2013058001A1/ja active Application Filing
- 2012-08-02 CN CN201280051817.0A patent/CN103890972B/zh active Active
- 2012-08-02 DE DE112012004412.6T patent/DE112012004412T8/de not_active Withdrawn - After Issue
- 2012-08-02 US US14/350,647 patent/US9368528B2/en active Active
- 2012-08-15 TW TW101129610A patent/TWI569429B/zh active
- 2012-08-15 TW TW105139293A patent/TWI601278B/zh active
-
2016
- 2016-05-10 US US15/150,859 patent/US9768222B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびx線ct装置 |
WO2004019411A1 (ja) * | 2002-08-09 | 2004-03-04 | Hamamatsu Photonics K.K. | フォトダイオードアレイ、その製造方法、及び放射線検出器 |
JP2004165602A (ja) * | 2002-09-24 | 2004-06-10 | Hamamatsu Photonics Kk | 半導体装置及びその製造方法 |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150115131A1 (en) * | 2013-10-28 | 2015-04-30 | Omnivision Technologies, Inc. | Stacked chip spad image sensor |
US9299732B2 (en) * | 2013-10-28 | 2016-03-29 | Omnivision Technologies, Inc. | Stacked chip SPAD image sensor |
JP2016062996A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 光検出器 |
US11374043B2 (en) * | 2016-07-27 | 2022-06-28 | Hamamatsu Photonics K.K. | Photodetection device with matrix array of avalanche diodes |
WO2021172071A1 (ja) * | 2020-02-28 | 2021-09-02 | 浜松ホトニクス株式会社 | 光検出装置 |
US11747195B2 (en) | 2020-02-28 | 2023-09-05 | Hamamatsu Photonics K.K. | Light detection apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN105870244A (zh) | 2016-08-17 |
CN103890972A (zh) | 2014-06-25 |
US20160254307A1 (en) | 2016-09-01 |
TWI601278B (zh) | 2017-10-01 |
DE112012004412T5 (de) | 2014-08-07 |
JP5926921B2 (ja) | 2016-05-25 |
JP2013089919A (ja) | 2013-05-13 |
CN103890972B (zh) | 2016-06-01 |
TW201318154A (zh) | 2013-05-01 |
US9368528B2 (en) | 2016-06-14 |
CN105870244B (zh) | 2017-10-20 |
TWI569429B (zh) | 2017-02-01 |
US20140291486A1 (en) | 2014-10-02 |
US9768222B2 (en) | 2017-09-19 |
DE112012004412T8 (de) | 2014-11-20 |
TW201717370A (zh) | 2017-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5926921B2 (ja) | 光検出装置 | |
JP5832852B2 (ja) | 光検出装置 | |
JP5791461B2 (ja) | 光検出装置 | |
JP6282368B2 (ja) | 光検出装置 | |
JP6663167B2 (ja) | 光検出装置 | |
JP6140868B2 (ja) | 半導体光検出素子 | |
JP5927334B2 (ja) | 光検出装置 | |
JP5911629B2 (ja) | 光検出装置 | |
JP6318190B2 (ja) | 光検出装置 | |
JP6186038B2 (ja) | 半導体光検出素子 | |
JP6244403B2 (ja) | 半導体光検出素子 | |
JP6116728B2 (ja) | 半導体光検出素子 | |
JP6282307B2 (ja) | 半導体光検出素子 | |
JP5989872B2 (ja) | 光検出装置の接続構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12840941 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14350647 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120120044126 Country of ref document: DE Ref document number: 112012004412 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12840941 Country of ref document: EP Kind code of ref document: A1 |