DE112012004412T8 - Lichterfassungsvorrichtung - Google Patents

Lichterfassungsvorrichtung Download PDF

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Publication number
DE112012004412T8
DE112012004412T8 DE112012004412.6T DE112012004412T DE112012004412T8 DE 112012004412 T8 DE112012004412 T8 DE 112012004412T8 DE 112012004412 T DE112012004412 T DE 112012004412T DE 112012004412 T8 DE112012004412 T8 DE 112012004412T8
Authority
DE
Germany
Prior art keywords
detection device
light detection
light
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
DE112012004412.6T
Other languages
English (en)
Other versions
DE112012004412T5 (de
Inventor
c/o Hamamatsu Photonics K.K. Nagano Terumasa
c/o Hamamatsu Photonics K.K. Hosokawa Noburo
c/o Hamamatsu Photonics K.K. Suzuki Tomofumi
c/o Hamamatsu Photonics K.K. Baba Takashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE112012004412T5 publication Critical patent/DE112012004412T5/de
Application granted granted Critical
Publication of DE112012004412T8 publication Critical patent/DE112012004412T8/de
Withdrawn - After Issue legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
DE112012004412.6T 2011-10-21 2012-08-02 Lichterfassungsvorrichtung Withdrawn - After Issue DE112012004412T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP2011232109 2011-10-21
JP2011232109A JP5926921B2 (ja) 2011-10-21 2011-10-21 光検出装置
PCT/JP2012/069727 WO2013058001A1 (ja) 2011-10-21 2012-08-02 光検出装置

Publications (2)

Publication Number Publication Date
DE112012004412T5 DE112012004412T5 (de) 2014-08-07
DE112012004412T8 true DE112012004412T8 (de) 2014-11-20

Family

ID=48140658

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012004412.6T Withdrawn - After Issue DE112012004412T8 (de) 2011-10-21 2012-08-02 Lichterfassungsvorrichtung

Country Status (6)

Country Link
US (2) US9368528B2 (de)
JP (1) JP5926921B2 (de)
CN (2) CN103890972B (de)
DE (1) DE112012004412T8 (de)
TW (2) TWI569429B (de)
WO (1) WO2013058001A1 (de)

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JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
US9299732B2 (en) * 2013-10-28 2016-03-29 Omnivision Technologies, Inc. Stacked chip SPAD image sensor
CN104752340B (zh) * 2013-12-31 2018-05-01 上海丽恒光微电子科技有限公司 雪崩光电二极管阵列装置及形成方法、激光三维成像装置
JP6193171B2 (ja) 2014-04-11 2017-09-06 株式会社東芝 光検出器
JP2016062996A (ja) * 2014-09-16 2016-04-25 株式会社東芝 光検出器
CN105655435B (zh) * 2014-11-14 2018-08-07 苏州瑞派宁科技有限公司 光电转换器、探测器及扫描设备
CN105842706B (zh) * 2015-01-14 2019-02-22 上海丽恒光微电子科技有限公司 激光三维成像装置及其制造方法
JP6469213B2 (ja) 2015-03-31 2019-02-13 浜松ホトニクス株式会社 半導体装置
WO2016174733A1 (ja) 2015-04-28 2016-11-03 オリンパス株式会社 半導体装置
CN109478578B (zh) * 2016-07-27 2022-01-25 浜松光子学株式会社 光检测装置
US10658415B2 (en) 2016-07-27 2020-05-19 Hamamatsu Photonics K.K. Light detection device
JP6701135B2 (ja) 2016-10-13 2020-05-27 キヤノン株式会社 光検出装置および光検出システム
EP3309847B1 (de) 2016-10-13 2024-06-05 Canon Kabushiki Kaisha Fotodetektionsvorrichtung und fotodetektionssystem
JP6712215B2 (ja) * 2016-11-11 2020-06-17 浜松ホトニクス株式会社 光検出装置
JP6431574B1 (ja) * 2017-07-12 2018-11-28 浜松ホトニクス株式会社 電子管
JP6932580B2 (ja) 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP6860467B2 (ja) * 2017-10-26 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 フォトダイオード、画素回路、および、フォトダイオードの製造方法
CN116845125A (zh) * 2018-01-26 2023-10-03 浜松光子学株式会社 光检测装置
JP6878338B2 (ja) * 2018-03-14 2021-05-26 株式会社東芝 受光装置および受光装置の製造方法
JP2019212684A (ja) * 2018-05-31 2019-12-12 株式会社クオンタムドライブ 可視光無線通信用の受光装置
WO2020121852A1 (ja) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
JP7454917B2 (ja) 2018-12-12 2024-03-25 浜松ホトニクス株式会社 光検出装置
JP7162204B2 (ja) * 2019-03-28 2022-10-28 パナソニックＩｐマネジメント株式会社 光検出器
JP2020073889A (ja) * 2019-12-04 2020-05-14 株式会社東芝 光検出器およびこれを用いたライダー装置
JP2021135229A (ja) * 2020-02-28 2021-09-13 浜松ホトニクス株式会社 光検出装置
CN113782510B (zh) * 2021-11-12 2022-04-01 深圳市灵明光子科技有限公司 一种3d堆叠芯片的键合键布设结构
JP2024028045A (ja) * 2022-08-19 2024-03-01 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
AU2003254876A1 (en) * 2002-08-09 2004-03-11 Hamamatsu Photonics K.K. Photodiode array, production method therefor, and radiation detector
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
RU2411542C2 (ru) 2005-04-22 2011-02-10 Конинклейке Филипс Электроникс Н.В. Цифровой кремниевый фотоумножитель для врп-пэт
GB2426575A (en) * 2005-05-27 2006-11-29 Sensl Technologies Ltd Photon detector using controlled sequences of reset and discharge of a capacitor to sense photons
CN101379615B (zh) * 2006-02-01 2013-06-12 皇家飞利浦电子股份有限公司 盖革式雪崩光电二极管
CN101484999B (zh) * 2006-07-03 2011-09-14 浜松光子学株式会社 光电二极管阵列
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
TW200950109A (en) 2008-05-21 2009-12-01 Univ Nat Formosa UV inspector for zinc oxide nano-pillar
DE102009017505B4 (de) * 2008-11-21 2014-07-10 Ketek Gmbh Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors
US8017902B2 (en) * 2008-12-12 2011-09-13 Infineon Technologies Ag Detector
JP2010283223A (ja) 2009-06-05 2010-12-16 Hamamatsu Photonics Kk 半導体光検出素子及び半導体光検出素子の製造方法
JP5297276B2 (ja) 2009-06-18 2013-09-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5600690B2 (ja) * 2010-01-15 2014-10-01 浜松ホトニクス株式会社 アバランシェフォトダイオード及びその製造方法
US8860166B2 (en) * 2010-03-23 2014-10-14 Stmicroelectronics S.R.L. Photo detector array of geiger mode avalanche photodiodes for computed tomography systems
CN102024863B (zh) * 2010-10-11 2013-03-27 湘潭大学 高速增强型紫外硅选择性雪崩光电二极管及其制作方法
JP5562207B2 (ja) * 2010-10-29 2014-07-30 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置

Also Published As

Publication number Publication date
CN105870244B (zh) 2017-10-20
CN103890972A (zh) 2014-06-25
US20160254307A1 (en) 2016-09-01
CN105870244A (zh) 2016-08-17
US9768222B2 (en) 2017-09-19
DE112012004412T5 (de) 2014-08-07
US9368528B2 (en) 2016-06-14
JP5926921B2 (ja) 2016-05-25
JP2013089919A (ja) 2013-05-13
US20140291486A1 (en) 2014-10-02
CN103890972B (zh) 2016-06-01
TWI601278B (zh) 2017-10-01
TWI569429B (zh) 2017-02-01
TW201717370A (zh) 2017-05-16
WO2013058001A1 (ja) 2013-04-25
TW201318154A (zh) 2013-05-01

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Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE

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R082 Change of representative

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R005 Application deemed withdrawn due to failure to request examination