CN110197859B - 一种工作在可见光波段的高带宽cmos apd光电器件 - Google Patents
一种工作在可见光波段的高带宽cmos apd光电器件 Download PDFInfo
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- CN110197859B CN110197859B CN201910573499.8A CN201910573499A CN110197859B CN 110197859 B CN110197859 B CN 110197859B CN 201910573499 A CN201910573499 A CN 201910573499A CN 110197859 B CN110197859 B CN 110197859B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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CN201910573499.8A CN110197859B (zh) | 2019-06-28 | 2019-06-28 | 一种工作在可见光波段的高带宽cmos apd光电器件 |
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CN111129203A (zh) * | 2019-12-17 | 2020-05-08 | 重庆邮电大学 | 一种高带宽cmos apd器件 |
CN112635613B (zh) * | 2020-07-22 | 2022-06-21 | 重庆中易智芯科技有限责任公司 | 一种低暗电流的cmos apd光电器件 |
KR20220114741A (ko) * | 2021-02-09 | 2022-08-17 | 에스케이하이닉스 주식회사 | 단일 광자 애벌런치 다이오드 |
Citations (2)
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CN103779437A (zh) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | 一种基于标准cmos工艺的单光子级分辨率传感器单元结构 |
CN109904273A (zh) * | 2019-01-08 | 2019-06-18 | 重庆邮电大学 | 一种cmos spad光电器件的等效电路 |
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WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
TWI458111B (zh) * | 2011-07-26 | 2014-10-21 | Univ Nat Central | 水平式累崩型光檢測器結構 |
CN103887362B (zh) * | 2014-03-28 | 2016-08-17 | 重庆邮电大学 | 一种带有深n阱的np型cmos雪崩光电二极管 |
CN105185796B (zh) * | 2015-09-30 | 2018-06-29 | 南京邮电大学 | 一种高探测效率的单光子雪崩二极管探测器阵列单元 |
CN107026212A (zh) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | 一种基于标准工艺的双pn结型单光子雪崩二极管结构 |
CN108550592B (zh) * | 2018-04-02 | 2020-08-04 | 重庆邮电大学 | 一种低暗计数率cmos spad光电器件 |
CN108573989B (zh) * | 2018-04-28 | 2021-09-14 | 中国科学院半导体研究所 | 硅基雪崩光电探测器阵列及其制作方法 |
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CN103779437A (zh) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | 一种基于标准cmos工艺的单光子级分辨率传感器单元结构 |
CN109904273A (zh) * | 2019-01-08 | 2019-06-18 | 重庆邮电大学 | 一种cmos spad光电器件的等效电路 |
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