CN103887362B - 一种带有深n阱的np型cmos雪崩光电二极管 - Google Patents
一种带有深n阱的np型cmos雪崩光电二极管 Download PDFInfo
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- CN103887362B CN103887362B CN201410122853.2A CN201410122853A CN103887362B CN 103887362 B CN103887362 B CN 103887362B CN 201410122853 A CN201410122853 A CN 201410122853A CN 103887362 B CN103887362 B CN 103887362B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
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CN201410122853.2A CN103887362B (zh) | 2014-03-28 | 2014-03-28 | 一种带有深n阱的np型cmos雪崩光电二极管 |
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CN201410122853.2A CN103887362B (zh) | 2014-03-28 | 2014-03-28 | 一种带有深n阱的np型cmos雪崩光电二极管 |
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CN103887362A CN103887362A (zh) | 2014-06-25 |
CN103887362B true CN103887362B (zh) | 2016-08-17 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3475987A4 (en) * | 2016-06-21 | 2020-01-01 | Shenzhen Xpectvision Technology Co., Ltd. | IMAGE SENSOR BASED ON AVALANCHE PHOTODIODS |
CN105977338B (zh) * | 2016-07-18 | 2018-08-31 | 中证博芯(重庆)半导体有限公司 | 低暗电流pin探测器及其加工方法 |
CN105977337B (zh) * | 2016-07-18 | 2017-08-25 | 苏州北鹏光电科技有限公司 | 低暗电流高速pin探测器及其加工方法 |
CN109411550A (zh) * | 2018-10-11 | 2019-03-01 | 重庆亚川电器有限公司 | 一种p阱/逆掺杂深n阱的cmos spad光电器件 |
CN109638024B (zh) * | 2018-12-18 | 2024-06-18 | 暨南大学 | 一种可见光短波段硅基雪崩光电二极管阵列及其制备方法 |
CN109713062B (zh) * | 2018-12-24 | 2020-12-18 | 华中科技大学 | 一种硅雪崩光电探测芯片及其制备方法 |
CN109599408B (zh) * | 2018-12-26 | 2022-05-03 | 中国电子科技集团公司第四十四研究所 | 一种cmos图像传感器像素结构及其制备、使用方法 |
DE102019204701A1 (de) * | 2019-04-02 | 2020-10-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodioden-Array |
CN110197859B (zh) * | 2019-06-28 | 2020-12-01 | 重庆邮电大学 | 一种工作在可见光波段的高带宽cmos apd光电器件 |
JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
CN112635613B (zh) * | 2020-07-22 | 2022-06-21 | 重庆中易智芯科技有限责任公司 | 一种低暗电流的cmos apd光电器件 |
CN114284376B (zh) * | 2020-09-28 | 2024-03-15 | 宁波飞芯电子科技有限公司 | 一种单光子雪崩二极管检测器 |
CN113270508B (zh) * | 2021-04-16 | 2023-01-20 | 中国航天科工集团第二研究院 | 一种雪崩光电二极管和光电倍增管探测器 |
CN114023269B (zh) * | 2021-10-14 | 2023-04-14 | 厦门中莘光电科技有限公司 | 单片集成光信号接收模块的Mini/Micro-LED驱动芯片 |
CN116913938B (zh) * | 2023-09-06 | 2023-11-21 | 北京邮电大学 | 低噪声高密度集成光电探测阵列芯片及其制备方法 |
Citations (5)
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CN1248793A (zh) * | 1998-09-23 | 2000-03-29 | 国际商业机器公司 | 增强雪崩型绝缘体基硅互补金属氧化物半导体器件的设计 |
WO2008129433A2 (en) * | 2007-04-24 | 2008-10-30 | Koninklijke Philips Electronics N.V. | Photodiodes and fabrication thereof |
CN101432893A (zh) * | 2006-04-25 | 2009-05-13 | 皇家飞利浦电子股份有限公司 | 采用(bi)cmos工艺的雪崩光电二极管的实现 |
CN102013427A (zh) * | 2009-09-07 | 2011-04-13 | 上海宏力半导体制造有限公司 | 雪崩击穿二极管结构及制造方法 |
WO2012032353A2 (en) * | 2010-09-08 | 2012-03-15 | The University Court Of The University Of Edinburgh | Single photon avalanche diode for cmos circuits |
-
2014
- 2014-03-28 CN CN201410122853.2A patent/CN103887362B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1248793A (zh) * | 1998-09-23 | 2000-03-29 | 国际商业机器公司 | 增强雪崩型绝缘体基硅互补金属氧化物半导体器件的设计 |
CN101432893A (zh) * | 2006-04-25 | 2009-05-13 | 皇家飞利浦电子股份有限公司 | 采用(bi)cmos工艺的雪崩光电二极管的实现 |
WO2008129433A2 (en) * | 2007-04-24 | 2008-10-30 | Koninklijke Philips Electronics N.V. | Photodiodes and fabrication thereof |
CN102013427A (zh) * | 2009-09-07 | 2011-04-13 | 上海宏力半导体制造有限公司 | 雪崩击穿二极管结构及制造方法 |
WO2012032353A2 (en) * | 2010-09-08 | 2012-03-15 | The University Court Of The University Of Edinburgh | Single photon avalanche diode for cmos circuits |
Non-Patent Citations (1)
Title |
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硅基APD器件的工艺及性能仿真分析;王巍 等;《红外与激光工程》;20140131;第43卷(第1期);140-144 * |
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