CN105226129B - 一种SiGe/Si异质结光敏晶体管探测器 - Google Patents
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Abstract
一种SiGe/Si异质结光敏晶体管探测器是一种兼顾效率和速度的可见光及近红外光探测器。该探测器包括Si衬底；在Si衬底上依次制备出的Si亚集电区、Si集电区/吸收层、Ge组份非均匀分布的SiGe基区/吸收层、多晶硅发射区和多晶硅吸收层；多晶硅发射区上的发射极；SiGe基区上的基极；Si亚集电区上的集电极。器件分离光探测吸收和光电流放大两个功能区，分别优化载流子的传输速度和电流放大功能。光电流放大区是基于标准SiGe BiCMOS工艺的SiGe HBT；在其光吸收区，利用HBT的发射结和集电结作为吸收区的浅结和深结，分别对应吸收长度短的可见光波段和吸收长度长的近红外波段，均衡全波段内的响应度。
Description
技术领域
本发明属于半导体光电子技术领域，特别涉及一种光探测吸收和光电流放大功能区分离的可见光及近红外光SiGe/Si异质结光敏晶体管探测器。这种光敏晶体管探测器可同时实现高吸收效率和高工作速度。
背景技术
作为现代光通信系统核心器件之一的高性能光电探测器，目前大多是基于价格昂贵的化合物工艺，制备的长波长光电探测器更适用于长距离通信。短距通信和甚短距通信更青睐近红外和可见光波段，同时迅猛发展的移动终端设备及蓝光存储设备也需要近红外和可见光探测器。基于硅材料的器件有低成本和易大规模集成的优点，硅基材料的吸收谱也落在近红外和可见光波段。因此相比基于化合物工艺的光电探测器，硅基探测器在短距和甚短距通信及移动终端的应用等方面更有优势。
SiGe BiCMOS工艺在CMOS工艺中嵌入SiGe HBT工艺，既有CMOS工艺低功耗，高集成的特点，又能利用双极性晶体管的高电流驱动能力；同时在频率和速度上超越CMOS工艺；在提高单片电路集成度的同时，成本增加不多；而且，由于工艺中含有异质结晶体管结构以及Ge成分的掺杂，其在光电子领域拥有比Si工艺更宽的应用范围。
2012年报道的一种基于标准80GHz BiCMOS工艺制备的SiGe光敏晶体管探测器，其探测窗口面积为20*20μm2，对850nm载波的50MHz光学微波信号吸收响应度为3.5A/W，光学微波信号的3dB带宽为728MHz。2013年报道的一种基于0.18BiCMOS工艺制备的SiGe光敏晶体管探测器，对750nm的光吸收响应度高达75A/W。但由于使用了衬底的光生载流子，器件的频率特性很差，工作速度慢。可见，当前的硅基光敏晶体管探测器在器件的响应度和频率特性上存在矛盾，难以同时实现高吸收效率和高工作速度。
发明内容
有鉴于此，本发明的主要目的是基于商用的标准SiGe BiCMOS工艺，提供一种高速高效全波段光敏晶体管探测器，改善SiGe光敏晶体管探测器吸收效率低和工作速度低的缺点，缓解响应度与工作速度优化时存在矛盾。
为了达到上述目的，本发明提供的一种兼顾效率和速度的可见光及近红外光SiGe/Si异质结光敏晶体管探测器，包括：
Si衬底1；在Si衬底上依次制备出的Si亚集电区2、Si集电区/吸收层3、SiGe基区/吸收层4、多晶硅发射区5和多晶硅吸收层6；多晶硅吸收层6及其下方的SiGe吸收层4、Si吸收层3构成器件的光探测吸收功能区；多晶硅发射区5、光探测吸收功能区之外的SiGe基区4和Si集电区3、Si亚集电区2构成器件的两个光电流放大区；发射极7，制作在多晶硅发射区5上；基极8，制作在SiGe基区/吸收层4上；集电极9，制作在Si亚集电区2上。
上述方案中Si衬底为中等掺杂的p型Si衬底1，掺杂浓度≥1.0×1017cm-3且<1.0×1019cm-3；
上述方案中Si亚集电区为重掺杂的n型Si亚集电区2，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，厚度介于0.3μm到0.5μm之间；
上述方案中Si集电区/吸收层为轻掺杂的n型Si集电区/吸收层3，掺杂浓度>1.0×1016cm-3且≤1.0×1017cm-3，厚度介于0.6μm到0.7μm之间；
上述方案中SiGe基区/吸收层为重掺杂的p型SiGe基区/吸收层4，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，Ge组分为矩形分布、三角形分布或梯形分布，厚度在0到0.01μm之间；
上述方案中多晶硅发射区为重掺杂的n型多晶硅发射区5，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，位于吸收层两侧，厚度介于0.4μm到0.5μm之间；
上述方案中多晶硅吸收层为重掺杂的n型多晶硅吸收层6，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，位于吸收层两侧，厚度介于0.4μm到0.5μm之间；
上述方案中所述的两个光电流放大区位于吸收区两侧，以实现器件的光探测吸收和光电流放大功能区的分离。
上述方案中光电流放大区是基于标准SiGe BiCMOS工艺的SiGe HBT，多晶硅发射区与SiGe基区形成发射结异质结，SiGe基区与Si集电区形成集电结异质结；
上述方案中光电流放大区中，多晶硅吸收层与SiGe吸收层形成的异质结为器件光探测吸收功能区的浅结，主要对应吸收长度短的可见光波段；
上述方案中光电流放大区中，SiGe吸收层与Si集电区形成的异质结为器件光探测吸收功能区的深结，主要对应吸收长度长的近红外波段。
附图说明
为进一步说明本发明的技术特征，结合以下附图，对本发明作一个详细的描述，其中：
图1是SiGe/Si异质结光敏晶体管探测器的结构图；
图2是器件在450nm入射光时的光功率响应及集电极光电流输出特性；
图3是器件在850nm入射光时的光功率响应及集电极光电流输出特性。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下结合具体实施例，并参照附图，对本发明进一步详细说明。
请参阅图1所示，本发明实施例提供的SiGe/Si异质结光敏晶体管探测器包括：
Si衬底1；在Si衬底上依次制备出的Si亚集电区2、Si集电区/吸收层3、Ge组份不均匀分布的SiGe基区/吸收层4、两个多晶硅发射区5以及多晶硅吸收层6；发射极7，制作在两个多晶硅发射区5上；基极8，制作在SiGe基区/吸收层4上；集电极9，制作在Si亚集电区2上；
其中所述的Si衬底为p型中等掺杂，掺杂浓度为1.0×1018～1.5×1018cm-3，厚度为1μm；
其中所述的Si亚集电区为n型重掺杂，掺杂浓度为1.0×1019～1.5×1019cm-3，厚度为0.3μm；
其中所述的Si集电区/吸收层为n型轻掺杂，掺杂浓度为9.5×1016～1.0×1017cm-3，厚度为0.6μm；
其中所述的SiGe基区/吸收层为p型重掺杂，掺杂浓度为1.0×1019～1.5×1019cm-3，厚度为0.09μm，Ge组分为梯形分布，厚度在0到0.01μm之间，Ge组分从0线性增加到0.15；厚度在0.01μm到0.07μm之间，Ge组分保持0.15不变；厚度在0.07μm到0.09μm之间，Ge组分从0.15线性减少到0；
其中所述的多晶硅发射区为n型重掺杂，掺杂浓度为1.0×1019～1.5×1019cm-3，位于吸收层两侧，厚度为0.3μm；
其中所述的多晶硅吸收层为n型重掺杂，掺杂浓度为1.0×1019～1.5×1019cm-3，厚度为0.3μm；
其中所述的多晶硅吸收层6及其下方的吸收层4、吸收层3构成器件的光探测吸收功能区(2)，多晶硅吸收层6的上表面为SiGe/Si异质结光敏晶体管探测器的光吸收窗口；
其中所述的多晶硅发射区5、光探测吸收功能区之外的SiGe基区4和Si集电区3、Si亚集电区2构成器件的光电流放大区(1)和(3)，是标准SiGe BiCMOS工艺提供的SiGe HBT；多晶硅发射区5与SiGe基区/吸收层4形成发射结异质结，SiGe基区/吸收层4与Si集电区3形成集电结异质结；
其中所述的光探测吸收区(2)和光电流放大区(1)(3)的分离，功能是分别优化光的探测吸收、光电流的放大和光生载流子的传输速度。
其中所述的光探测吸收区(2)，利用形成的发射结异质结和集电结异质结作为吸收区的浅结10和深结11，分别对应吸收长度短的可见光波段和吸收长度长的近红外波段。
当有波长较短的可见光波段照射多晶硅发射区材料层上的光吸收窗口时，浅结(发射结)10耗尽层吸收产生的光生空穴进入SiGe基区/吸收层4，进而被传输至发射结。当有波长较长的近红外光波段照射多晶硅发射区材料层上的光吸收窗口时，深结(集电结)11耗尽层吸收产生的光生空穴也同样进入SiGe基区/吸收层4，进而被传输至发射结，引发光生电流的放大。
其中所述的SiGe基区/吸收层4中梯形分布的Ge组分，可促使基区形成内建加速场对光生电子加速，减少光生电子在基区的渡越时间。在保证一定的发射效率的前提下线性减少发射结附近Ge含量可减小基区复合对器件增益的影响。同时集电结附近的Ge组分线性减少可消除一部分集电结处的能带差，从而消弱异质结势垒效应。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (4)
1.一种SiGe/Si异质结光敏晶体管探测器，其特征在于包括：
Si衬底；在Si衬底上依次制备出的Si亚集电区、Si集电区/吸收层、SiGe基区/吸收层、多晶硅发射区/吸收层；多晶硅吸收层及其下方的SiGe吸收层、Si吸收层构成器件的光探测吸收功能区；多晶硅发射区、光探测吸收功能区之外的SiGe基区和Si集电区、Si亚集电区构成器件的光电流放大区；发射极，制作在两个多晶硅发射区上；基极，制作在SiGe基区上；集电极，制作在Si亚集电区上；
其中所述的Si衬底是p型中等掺杂的Si衬底，掺杂浓度≥1.0×1017cm-3且＜1.0×1019cm-3，厚度介于0.8μm到1.2μm之间；
其中所述的Si亚集电区是n型重掺杂的Si亚集电区，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，厚度介于0.3μm到0.5μm之间；
其中所述的Si集电区/吸收层是n型轻掺杂的Si集电区/吸收层，掺杂浓度＞1.0×1016cm-3且≤1.0×1017cm-3，厚度介于0.6μm到0.7μm之间；
其中所述的SiGe基区/吸收层是p型重掺杂的SiGe基区/吸收层，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，厚度介于0.08μm到0.1μm之间；
其中所述的多晶硅发射区/吸收层是n型重掺杂的多晶硅发射区/吸收层，掺杂浓度≥1.0×1019cm-3且≤1.0×1021cm-3，位于吸收层两侧，厚度介于0.3μm到0.4μm之间；
其中所述的多晶硅发射区/吸收层与SiGe基区形成发射结异质结，SiGe基区/吸收层与Si集电区形成集电结异质结。
2.如权利要求1所述的SiGe/Si异质结光敏晶体管探测器，其中光电流放大区位于光探测吸收功能区的两侧，以实现光探测吸收功能区和光电流放大区的分离。
3.如权利要求1所述的SiGe/Si异质结光敏晶体管探测器，其中所述的SiGe基区/吸收层中的Ge组分可以为矩形分布、三角形分布或梯形分布。
4.如权利要求1所述的SiGe/Si异质结光敏晶体管探测器，其中：光电流放大区中，多晶硅吸收层与SiGe吸收层形成的异质结为器件光探测吸收功能区的浅结，主要对应吸收长度短的可见光波段；
光电流放大区中，SiGe吸收层与Si集电区形成的异质结为器件光探测吸收功能区的深结，主要对应吸收长度长的近红外波段。
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