CN108550592B - 一种低暗计数率cmos spad光电器件 - Google Patents
一种低暗计数率cmos spad光电器件 Download PDFInfo
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- CN108550592B CN108550592B CN201810281640.2A CN201810281640A CN108550592B CN 108550592 B CN108550592 B CN 108550592B CN 201810281640 A CN201810281640 A CN 201810281640A CN 108550592 B CN108550592 B CN 108550592B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109411550A (zh) * | 2018-10-11 | 2019-03-01 | 重庆亚川电器有限公司 | 一种p阱/逆掺杂深n阱的cmos spad光电器件 |
CN109638092A (zh) * | 2018-11-15 | 2019-04-16 | 天津大学 | 基于标准cmos工艺的高探测效率低暗计数的spad |
CN109904273B (zh) * | 2019-01-08 | 2020-11-24 | 重庆邮电大学 | 一种cmos spad光电器件的等效电路 |
CN110197859B (zh) * | 2019-06-28 | 2020-12-01 | 重庆邮电大学 | 一种工作在可见光波段的高带宽cmos apd光电器件 |
CN111490123A (zh) * | 2020-05-19 | 2020-08-04 | 中国计量大学 | 一种低暗计数率的单光子雪崩二极管及其制作方法 |
WO2022011701A1 (zh) * | 2020-07-17 | 2022-01-20 | 华为技术有限公司 | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103299437A (zh) * | 2010-09-08 | 2013-09-11 | 爱丁堡大学评议会 | 用于cmos电路的单光子雪崩二极管 |
CN103779437A (zh) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | 一种基于标准cmos工艺的单光子级分辨率传感器单元结构 |
CN105185796A (zh) * | 2015-09-30 | 2015-12-23 | 南京邮电大学 | 一种高探测效率的单光子雪崩二极管探测器阵列单元 |
CN106847960A (zh) * | 2017-01-23 | 2017-06-13 | 重庆邮电大学 | 一种基于深n阱结构的单光子雪崩二极管及其制作工艺 |
CN107026212A (zh) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | 一种基于标准工艺的双pn结型单光子雪崩二极管结构 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103299437A (zh) * | 2010-09-08 | 2013-09-11 | 爱丁堡大学评议会 | 用于cmos电路的单光子雪崩二极管 |
CN103779437A (zh) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | 一种基于标准cmos工艺的单光子级分辨率传感器单元结构 |
CN105185796A (zh) * | 2015-09-30 | 2015-12-23 | 南京邮电大学 | 一种高探测效率的单光子雪崩二极管探测器阵列单元 |
CN107026212A (zh) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | 一种基于标准工艺的双pn结型单光子雪崩二极管结构 |
CN106847960A (zh) * | 2017-01-23 | 2017-06-13 | 重庆邮电大学 | 一种基于深n阱结构的单光子雪崩二极管及其制作工艺 |
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