CN109314153B - 基于雪崩光电二极管的图像感测器 - Google Patents
基于雪崩光电二极管的图像感测器 Download PDFInfo
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- CN109314153B CN109314153B CN201680086483.9A CN201680086483A CN109314153B CN 109314153 B CN109314153 B CN 109314153B CN 201680086483 A CN201680086483 A CN 201680086483A CN 109314153 B CN109314153 B CN 109314153B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
- G02B21/361—Optical details, e.g. image relay to the camera or image sensor
Abstract
Description
Claims (24)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010922829.2A CN112018142A (zh) | 2016-06-21 | 2016-06-21 | 基于雪崩光电二极管的图像感测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2016/086513 WO2017219224A1 (en) | 2016-06-21 | 2016-06-21 | An image sensor based on avalanche photodiodes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202010922829.2A Division CN112018142A (zh) | 2016-06-21 | 2016-06-21 | 基于雪崩光电二极管的图像感测器 |
Publications (2)
Publication Number | Publication Date |
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CN109314153A CN109314153A (zh) | 2019-02-05 |
CN109314153B true CN109314153B (zh) | 2022-05-17 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201680086483.9A Active CN109314153B (zh) | 2016-06-21 | 2016-06-21 | 基于雪崩光电二极管的图像感测器 |
CN202010922829.2A Pending CN112018142A (zh) | 2016-06-21 | 2016-06-21 | 基于雪崩光电二极管的图像感测器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN202010922829.2A Pending CN112018142A (zh) | 2016-06-21 | 2016-06-21 | 基于雪崩光电二极管的图像感测器 |
Country Status (5)
Country | Link |
---|---|
US (3) | US10418409B2 (zh) |
EP (1) | EP3475987A4 (zh) |
CN (2) | CN109314153B (zh) |
TW (2) | TWI736634B (zh) |
WO (1) | WO2017219224A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109314153B (zh) * | 2016-06-21 | 2022-05-17 | 深圳帧观德芯科技有限公司 | 基于雪崩光电二极管的图像感测器 |
EP3821473B1 (en) | 2018-07-12 | 2023-07-05 | Shenzhen Xpectvision Technology Co., Ltd. | Image sensors with silver-nanoparticle electrodes |
WO2020047836A1 (en) * | 2018-09-07 | 2020-03-12 | Shenzhen Xpectvision Technology Co., Ltd. | Ultraviolet light image sensor |
WO2021016831A1 (en) * | 2019-07-30 | 2021-02-04 | Shenzhen Genorivision Technology Co., Ltd. | Lidar systems for phones |
WO2021016830A1 (en) * | 2019-07-30 | 2021-02-04 | Shenzhen Genorivision Technology Co., Ltd. | Image sensors for lidar systems |
JP2023500636A (ja) * | 2019-10-31 | 2023-01-10 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 深接合低利得電子なだれ検出器 |
JP2023002986A (ja) * | 2021-06-23 | 2023-01-11 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードアレイ |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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CA1298640C (en) * | 1989-05-04 | 1992-04-07 | Lawrence Edward Tarof | Avalanche photodiodes and methods for their manufacture |
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
US6046454A (en) * | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
JPH1070303A (ja) * | 1996-08-26 | 1998-03-10 | Fuji Xerox Co Ltd | 半導体受光素子 |
US6359322B1 (en) * | 1999-04-15 | 2002-03-19 | Georgia Tech Research Corporation | Avalanche photodiode having edge breakdown suppression |
US6583482B2 (en) * | 2000-12-06 | 2003-06-24 | Alexandre Pauchard | Hetero-interface avalance photodetector |
IES20010616A2 (en) | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
US6747296B1 (en) * | 2002-06-18 | 2004-06-08 | Solid State Scientific Corporation | Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio |
TWI224401B (en) * | 2003-06-17 | 2004-11-21 | Neng-Fu Shih | Strucrure of multi-layer avalanche photodiode |
US7233051B2 (en) * | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US20070152289A1 (en) * | 2005-12-30 | 2007-07-05 | Morse Michael T | Avalanche photodetector with reflector-based responsivity enhancement |
JP4212623B2 (ja) * | 2006-01-31 | 2009-01-21 | 三洋電機株式会社 | 撮像装置 |
TWI443817B (zh) * | 2006-07-03 | 2014-07-01 | Hamamatsu Photonics Kk | Photodiode array |
US7683397B2 (en) * | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
WO2009103048A1 (en) * | 2008-02-14 | 2009-08-20 | Quantum Semiconductor Llc | Dual photo-diode cmos pixels |
JP2012502466A (ja) * | 2008-09-04 | 2012-01-26 | クナノ アーベー | ナノ構造のフォトダイオード |
JP5829224B2 (ja) * | 2009-02-24 | 2015-12-09 | 浜松ホトニクス株式会社 | Mosイメージセンサ |
GB201014843D0 (en) * | 2010-09-08 | 2010-10-20 | Univ Edinburgh | Single photon avalanche diode for CMOS circuits |
US8471205B2 (en) * | 2011-08-25 | 2013-06-25 | Bae Systems Information And Electronic Systems Integration Inc. | Hybrid photodiode/APD focal plane array for solid state low light level imagers |
EP2856505B1 (en) * | 2012-05-29 | 2020-11-18 | Hewlett-Packard Enterprise Development LP | Devices including independently controllable absorption region and multiplication region electric fields |
JP2015012059A (ja) * | 2013-06-27 | 2015-01-19 | ソニー株式会社 | 固体撮像素子及びその製造方法、並びに撮像装置 |
JP6090060B2 (ja) | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
US9520439B2 (en) * | 2013-09-23 | 2016-12-13 | Omnivision Technologies, Inc. | X-ray and optical image sensor |
CN103887362B (zh) * | 2014-03-28 | 2016-08-17 | 重庆邮电大学 | 一种带有深n阱的np型cmos雪崩光电二极管 |
US9209320B1 (en) * | 2014-08-07 | 2015-12-08 | Omnivision Technologies, Inc. | Method of fabricating a single photon avalanche diode imaging sensor |
CN109314153B (zh) * | 2016-06-21 | 2022-05-17 | 深圳帧观德芯科技有限公司 | 基于雪崩光电二极管的图像感测器 |
-
2016
- 2016-06-21 CN CN201680086483.9A patent/CN109314153B/zh active Active
- 2016-06-21 CN CN202010922829.2A patent/CN112018142A/zh active Pending
- 2016-06-21 WO PCT/CN2016/086513 patent/WO2017219224A1/en unknown
- 2016-06-21 EP EP16905766.8A patent/EP3475987A4/en not_active Ceased
-
2017
- 2017-06-12 TW TW106119503A patent/TWI736634B/zh active
- 2017-06-12 TW TW109127108A patent/TWI737441B/zh active
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2018
- 2018-08-30 US US16/117,966 patent/US10418409B2/en active Active
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2019
- 2019-08-02 US US16/529,909 patent/US10797098B2/en active Active
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2020
- 2020-07-29 US US16/941,665 patent/US11114494B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10418409B2 (en) | 2019-09-17 |
EP3475987A4 (en) | 2020-01-01 |
US20200357840A1 (en) | 2020-11-12 |
TWI737441B (zh) | 2021-08-21 |
US20190355777A1 (en) | 2019-11-21 |
CN112018142A (zh) | 2020-12-01 |
TWI736634B (zh) | 2021-08-21 |
WO2017219224A1 (en) | 2017-12-28 |
US20180374890A1 (en) | 2018-12-27 |
TW201806136A (zh) | 2018-02-16 |
CN109314153A (zh) | 2019-02-05 |
EP3475987A1 (en) | 2019-05-01 |
US10797098B2 (en) | 2020-10-06 |
US11114494B2 (en) | 2021-09-07 |
TW202044568A (zh) | 2020-12-01 |
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Address after: 518000 B507, blocks a and B, Nanshan medical device Industrial Park, No. 1019, Nanhai Avenue, Yanshan community, merchants street, Nanshan District, Shenzhen, Guangdong Applicant after: SHENZHEN XPECTVISION TECHNOLOGY Co.,Ltd. Address before: 518071 Room 201, building 52, jiyuecheng Zhongchuang Industrial Park, Tanglang industrial zone B, No. 13, Xinyi 5th Road, Tanglang community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN XPECTVISION TECHNOLOGY Co.,Ltd. |
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