JP6913840B1 - 測距イメージセンサ及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000005259 measurement Methods 0.000 title description 4
- 238000012546 transfer Methods 0.000 claims abstract description 167
- 239000004065 semiconductor Substances 0.000 claims abstract description 160
- 238000009826 distribution Methods 0.000 claims abstract description 72
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 36
- 230000000903 blocking effect Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
[第1実施形態]
[光検出装置の構成]
[測距イメージセンサの構成]
[測距イメージセンサの製造方法]
[作用及び効果]
[第2実施形態]
[第3実施形態]
[第4実施形態]
[第5実施形態]
[変形例]
Claims (11)
- 第1側の第1表面、及び、前記第1側とは反対側である第2側の第2表面を有し、前記第1表面に沿って配置された複数の画素を構成する半導体層と、
前記第1表面に設けられ、前記複数の画素を構成する電極層と、を備え、
前記複数の画素のそれぞれは、
前記半導体層に形成された第1導電型の第1増倍領域、及び、前記半導体層において前記第1増倍領域の前記第1側に形成された第2導電型の第2増倍領域を含むアバランシェ増倍領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記第2増倍領域と接続された第2導電型の電荷振分領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記電荷振分領域と接続された第2導電型の第1電荷転送領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記電荷振分領域と接続された第2導電型の第2電荷転送領域と、
前記電極層において前記電荷振分領域の前記第1側に形成されたフォトゲート電極と、
前記フォトゲート電極に対して前記第1電荷転送領域側に位置するように、前記電極層において前記電荷振分領域の前記第1側に形成された第1転送ゲート電極と、
前記フォトゲート電極に対して前記第2電荷転送領域側に位置するように、前記電極層において前記電荷振分領域の前記第1側に形成された第2転送ゲート電極と、有し、
前記アバランシェ増倍領域は、前記複数の画素に渡って繋がっているか、又は、前記複数の画素のそれぞれを互いに分離するように前記半導体層に形成されたトレンチに至っている、測距イメージセンサ。 - 前記トレンチは、前記第1表面に形成されており、
前記トレンチの底面は、前記アバランシェ増倍領域に対して前記第2側に位置している、請求項1に記載の測距イメージセンサ。 - 前記トレンチは、前記第1表面に形成されており、
前記トレンチの底面は、前記アバランシェ増倍領域内に位置している、請求項1に記載の測距イメージセンサ。 - 前記複数の画素のそれぞれは、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記第1電荷転送領域及び前記第2電荷転送領域の少なくとも一方と電気的に接続された読出し回路を構成する第1導電型のウェル領域と、
前記半導体層において前記第2増倍領域と前記ウェル領域との間に形成された第2導電型のバリア領域と、を更に有する、請求項1〜3のいずれか一項に記載の測距イメージセンサ。 - 前記バリア領域は、前記半導体層の厚さ方向から見た場合に前記ウェル領域を含んでいる、請求項4に記載の測距イメージセンサ。
- 前記複数の画素のそれぞれは、
前記半導体層において前記バリア領域の前記第1側に形成され、前記バリア領域と接続された第2導電型のシンク領域を更に有する、請求項4又は5に記載の測距イメージセンサ。 - 前記シンク領域は、前記第2電荷転送領域と接続されている、請求項6に記載の測距イメージセンサ。
- 前記電極層を覆うように前記第1表面に設けられ、前記複数の画素のそれぞれと電気的に接続された配線層を更に備える、請求項1〜7のいずれか一項に記載の測距イメージセンサ。
- 請求項1に記載の測距イメージセンサの製造方法であって、
前記アバランシェ増倍領域、前記電荷振分領域、前記第1電荷転送領域及び前記第2電荷転送領域を半導体基板に形成することで、前記半導体層を形成する第1工程と、
前記第1工程の後に、前記フォトゲート電極、前記第1転送ゲート電極及び前記第2転送ゲート電極を前記半導体層の前記第1表面に形成することで、前記電極層を形成する第2工程と、を備え、
前記第1工程においては、前記複数の画素に渡って繋がるように前記半導体基板に前記アバランシェ増倍領域を形成する、測距イメージセンサの製造方法。 - 前記第1工程においては、少なくとも前記アバランシェ増倍領域を前記半導体基板に形成した後に、前記第1表面に前記トレンチを形成する、請求項9に記載の測距イメージセンサの製造方法。
- 前記第2工程の後に、前記電極層を覆うように前記第1表面に配線層を形成し、前記配線層を前記複数の画素のそれぞれと電気的に接続する第3工程を更に備える、請求項10に記載の測距イメージセンサの製造方法。
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JP (2) | JP6913840B1 (ja) |
KR (1) | KR20220119661A (ja) |
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WO2024038703A1 (ja) * | 2022-08-19 | 2024-02-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
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- 2020-12-07 US US17/788,005 patent/US20230026004A1/en active Pending
- 2020-12-07 WO PCT/JP2020/045535 patent/WO2021131651A1/ja active Application Filing
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- 2020-12-07 JP JP2021521315A patent/JP6913840B1/ja active Active
- 2020-12-07 KR KR1020227024969A patent/KR20220119661A/ko unknown
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WO2024038703A1 (ja) * | 2022-08-19 | 2024-02-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
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DE112020006344T5 (de) | 2022-10-27 |
US20230026004A1 (en) | 2023-01-26 |
JP2021182627A (ja) | 2021-11-25 |
CN114902418A (zh) | 2022-08-12 |
WO2021131651A1 (ja) | 2021-07-01 |
KR20220119661A (ko) | 2022-08-30 |
JPWO2021131651A1 (ja) | 2021-07-01 |
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