JP7182978B2 - 光検出装置、光検出システム - Google Patents
光検出装置、光検出システム Download PDFInfo
- Publication number
- JP7182978B2 JP7182978B2 JP2018185429A JP2018185429A JP7182978B2 JP 7182978 B2 JP7182978 B2 JP 7182978B2 JP 2018185429 A JP2018185429 A JP 2018185429A JP 2018185429 A JP2018185429 A JP 2018185429A JP 7182978 B2 JP7182978 B2 JP 7182978B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- depth
- photodetector
- type semiconductor
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 294
- 239000012535 impurity Substances 0.000 claims description 73
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 23
- 238000009826 distribution Methods 0.000 description 21
- 238000010791 quenching Methods 0.000 description 20
- 238000001514 detection method Methods 0.000 description 19
- 230000015654 memory Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 238000007493 shaping process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 230000000171 quenching effect Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/42—Simultaneous measurement of distance and other co-ordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
- G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/50—Depth or shape recovery
- G06T7/55—Depth or shape recovery from multiple images
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30248—Vehicle exterior or interior
- G06T2207/30252—Vehicle exterior; Vicinity of vehicle
Description
本発明の第1実施形態による光検出装置について、図1乃至図7を用いて説明する。
図3(a)の場合には、Dead timeは、数式2で求められる。
τd=R(Cpd+C) …(数式2)
図3(b)の場合には、Dead timeは、数式3で求められる。
τd=R(Cpd+Cw+C) …(数式3)
深さDにおいて、点線20と実線21のポテンシャルはほぼ同じ高さとなっており、線分EE’および線分FF’で示す領域において、半導体基板100の第1面の側に向かって緩やかに低くなるポテンシャル勾配をもつ。そのため光検出装置において生じた電荷は、緩やかなポテンシャル勾配によって第1面の側に移動する。
本実施例では、各実施例の光検出装置1010を用いた光検出システムの一例を説明する。図8を用いて光検出システムの一例である不可視光検出システムおよびPET等の医療診断システムについて説明する。
本実施例では、各実施例の光検出装置1010を用いた光検出システムの一例を説明する。
101 N型不純物領域
102 N型不純物領域
103 P型不純物領域
104 P型不純物領域
105 N型不純物領域
201 P型不純物領域
204 分離部
Claims (9)
- 第1面と、前記第1面と対向する第2面とを有する半導体基板と、
アバランシェダイオードを含む画素が、前記半導体基板に複数配された画素部と、を有する光検出装置であって、
前記アバランシェダイオードは、断面視において、
第1の深さに配された第1導電型の第1半導体領域と、
前記第1の深さよりも前記第1面に対して深い第2の深さに配され、前記第1半導体領域との間でアバランシェ増倍領域を構成する第2導電型の第2半導体領域と、
前記第2の深さよりも前記第1面に対して深い第3の深さに配され、前記第2半導体領域と接する第3半導体領域と、
前記第1の深さから前記第3の深さに渡って各々延在する、第1分離部と第2分離部とを有し、
前記第2半導体領域は、前記第1分離部から前記第2分離部に渡って延在し、
前記アバランシェダイオードは、平面視において、
前記第1半導体領域の面積は、前記第2半導体領域の面積よりも小さく、
前記第1半導体領域、前記第2半導体領域、前記第3半導体領域の各々は、重なる部分を有することを特徴とする光検出装置。 - 前記第3半導体領域が、前記第1導電型であることを特徴とする請求項1に記載の光検出装置。
- 前記第1分離部、前記第2分離部の各々が、前記第2導電型の半導体領域であることを特徴とする請求項1または2に記載の光検出装置。
- 前記第1分離部と前記第2分離部は、所定の電位が供給されるコンタクトプラグに接続されることを特徴とする請求項3に記載の光検出装置。
- 前記第1の深さにおいて、前記第1半導体領域と前記第1分離部とに接するとともに、前記第1導電型であって、前記第1半導体領域よりも不純物濃度が低い半導体領域をさらに有することを特徴とする請求項1~4のいずれか1項に記載の光検出装置。
- 前記第1の深さにおいて、前記第1半導体領域と前記第2分離部とに接するとともに、前記第1導電型であって、前記第1半導体領域よりも不純物濃度が低い半導体領域をさらに有することを特徴とする請求項5に記載の光検出装置。
- 請求項1~6のいずれか1項に記載の光検出装置を有する光検出システムであって、
第1波長帯の光を前記第1波長帯と異なる第2波長帯の光に変換する波長変換部と、
前記光検出装置に保持された複数のデジタル信号から得られる複数の画像の合成処理を行う信号処理手段と、を有し、
前記波長変換部から出力された前記第2波長帯の光が前記光検出装置に入射するように構成されていることを特徴とする光検出システム。 - 請求項1~6のいずれか1項に記載の光検出装置を有する光検出システムであって、
前記光検出装置によって検出される光を発光する発光部と、
前記光検出装置に保持されたデジタル信号を用いて距離算出を行う距離算出手段と、を有することを特徴とする光検出システム。 - 移動体であって、
請求項1~6のいずれか1項に記載の光検出装置と、
前記光検出装置からの信号に基づく視差画像から、対象物までの距離情報を取得する距離情報取得手段と、
前記距離情報に基づいて前記移動体を制御する制御手段と、を有することを特徴とする移動体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018185429A JP7182978B2 (ja) | 2018-09-28 | 2018-09-28 | 光検出装置、光検出システム |
US16/570,826 US11289520B2 (en) | 2018-09-28 | 2019-09-13 | Light detection device including an avalanche diode |
CN201910902187.7A CN110970447A (zh) | 2018-09-28 | 2019-09-24 | 光检测设备和光检测系统 |
US17/680,055 US20220181362A1 (en) | 2018-09-28 | 2022-02-24 | Light detection device and light detection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018185429A JP7182978B2 (ja) | 2018-09-28 | 2018-09-28 | 光検出装置、光検出システム |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020057650A JP2020057650A (ja) | 2020-04-09 |
JP2020057650A5 JP2020057650A5 (ja) | 2021-11-04 |
JP7182978B2 true JP7182978B2 (ja) | 2022-12-05 |
Family
ID=69946581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018185429A Active JP7182978B2 (ja) | 2018-09-28 | 2018-09-28 | 光検出装置、光検出システム |
Country Status (3)
Country | Link |
---|---|
US (2) | US11289520B2 (ja) |
JP (1) | JP7182978B2 (ja) |
CN (1) | CN110970447A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7182978B2 (ja) * | 2018-09-28 | 2022-12-05 | キヤノン株式会社 | 光検出装置、光検出システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006179828A (ja) | 2004-12-24 | 2006-07-06 | Hamamatsu Photonics Kk | ホトダイオードアレイ |
US20100271108A1 (en) | 2009-04-23 | 2010-10-28 | Stmicroelectronics S.R.L. | Geiger-mode photodiode with integrated and jfet-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method |
US20140339398A1 (en) | 2013-05-16 | 2014-11-20 | Stmicroelectronics S.R.L. | Avalanche photodiode operating in geiger mode including a structure for electro-optical confinement for crosstalk reduction, and array of photodiodes |
JP2018064086A (ja) | 2016-10-13 | 2018-04-19 | キヤノン株式会社 | 光検出装置および光検出システム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2610010B2 (ja) * | 1984-02-29 | 1997-05-14 | ソニー株式会社 | 縦形オーバーフローイメージセンサー |
JPS61136225A (ja) * | 1984-12-07 | 1986-06-24 | Nec Corp | InPへの不純物拡散方法 |
JPH1070303A (ja) * | 1996-08-26 | 1998-03-10 | Fuji Xerox Co Ltd | 半導体受光素子 |
AU2185499A (en) * | 1998-01-30 | 1999-08-16 | Hamamatsu Photonics K.K. | Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode |
JP2006013522A (ja) * | 2004-06-28 | 2006-01-12 | Samsung Electronics Co Ltd | イメージセンサー及びその製造方法 |
JP6090060B2 (ja) | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
US9209320B1 (en) * | 2014-08-07 | 2015-12-08 | Omnivision Technologies, Inc. | Method of fabricating a single photon avalanche diode imaging sensor |
US10497818B2 (en) * | 2016-07-29 | 2019-12-03 | Canon Kabushiki Kaisha | Photodetection device and photodetection system |
EP3309847A1 (en) * | 2016-10-13 | 2018-04-18 | Canon Kabushiki Kaisha | Photo-detection apparatus and photo-detection system |
JP6853977B2 (ja) * | 2017-01-16 | 2021-04-07 | 国立研究開発法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
US10312275B2 (en) * | 2017-04-25 | 2019-06-04 | Semiconductor Components Industries, Llc | Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities |
JP7114244B2 (ja) * | 2017-11-30 | 2022-08-08 | キヤノン株式会社 | 光検出装置、光検出システム、及び移動体 |
JP7242234B2 (ja) * | 2018-09-28 | 2023-03-20 | キヤノン株式会社 | 光検出装置、光検出システム |
JP7182978B2 (ja) * | 2018-09-28 | 2022-12-05 | キヤノン株式会社 | 光検出装置、光検出システム |
US11393870B2 (en) * | 2018-12-18 | 2022-07-19 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, and mobile apparatus |
-
2018
- 2018-09-28 JP JP2018185429A patent/JP7182978B2/ja active Active
-
2019
- 2019-09-13 US US16/570,826 patent/US11289520B2/en active Active
- 2019-09-24 CN CN201910902187.7A patent/CN110970447A/zh active Pending
-
2022
- 2022-02-24 US US17/680,055 patent/US20220181362A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006179828A (ja) | 2004-12-24 | 2006-07-06 | Hamamatsu Photonics Kk | ホトダイオードアレイ |
US20100271108A1 (en) | 2009-04-23 | 2010-10-28 | Stmicroelectronics S.R.L. | Geiger-mode photodiode with integrated and jfet-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method |
US20140339398A1 (en) | 2013-05-16 | 2014-11-20 | Stmicroelectronics S.R.L. | Avalanche photodiode operating in geiger mode including a structure for electro-optical confinement for crosstalk reduction, and array of photodiodes |
JP2018064086A (ja) | 2016-10-13 | 2018-04-19 | キヤノン株式会社 | 光検出装置および光検出システム |
Also Published As
Publication number | Publication date |
---|---|
CN110970447A (zh) | 2020-04-07 |
US11289520B2 (en) | 2022-03-29 |
US20220181362A1 (en) | 2022-06-09 |
US20200105804A1 (en) | 2020-04-02 |
JP2020057650A (ja) | 2020-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7379606B2 (ja) | 光検出装置および光検出システム | |
US11158755B2 (en) | Photo-detection apparatus and photo-detection system | |
JP7242234B2 (ja) | 光検出装置、光検出システム | |
US10283651B2 (en) | Photodetection device and system having avalanche amplification | |
JP7114244B2 (ja) | 光検出装置、光検出システム、及び移動体 | |
JP7353765B2 (ja) | 光検出装置、光検出システム及び移動体 | |
US11189742B2 (en) | Photo-detection device, photo-detection system, and mobile apparatus | |
US10833207B2 (en) | Photo-detection device, photo-detection system, and mobile apparatus | |
US20220181362A1 (en) | Light detection device and light detection system | |
JP7362352B2 (ja) | 光電変換装置、光電変換システム、および移動体 | |
US11984525B2 (en) | Photo-detection apparatus and photo-detection system | |
JP7379117B2 (ja) | 光電変換装置及び光電変換システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210927 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210927 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221025 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221122 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7182978 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |