JP7273545B2 - 受光装置及び距離計測装置 - Google Patents
受光装置及び距離計測装置 Download PDFInfo
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- JP7273545B2 JP7273545B2 JP2019041874A JP2019041874A JP7273545B2 JP 7273545 B2 JP7273545 B2 JP 7273545B2 JP 2019041874 A JP2019041874 A JP 2019041874A JP 2019041874 A JP2019041874 A JP 2019041874A JP 7273545 B2 JP7273545 B2 JP 7273545B2
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- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000011810 insulating material Substances 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 description 41
- 238000000926 separation method Methods 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 238000002955 isolation Methods 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 16
- 238000010791 quenching Methods 0.000 description 14
- 230000000171 quenching effect Effects 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003891 environmental analysis Methods 0.000 description 1
- 238000000684 flow cytometry Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/248—Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Description
10 シリコン基板
13 画素分離膜
14 保護膜
15 金属膜
16 Siエピタキシャル層
21、22、23、24、28、29 画素
31 カソード電極パッド
41 カソード配線
42 カソード電極膜
61a~61c 配線
71、72、73、74、78、79 APD
81 クエンチング抵抗
91 配線
101、102、103 接続部
130、134 分離要素
136 保護膜側分離要素
137 金属膜側分離要素
151 アノード配線
161 P形エピタキシャル層
162 P+形エピタキシャル層
163 N形エピタキシャル層
164 第1部分
165 第2部分
166 第3部分
167 第4部分
200 距離計測装置
201 計測部
202 出力インタフェイス
203 タイミング調整部
204 パルス制御部
205 レーザダイオード駆動部(LD駆動部)
206 レーザダイオード素子(LD素子)
207 モータ制御部
208 光学装置
211 レンズ
213 鏡
214 モータ
300 測距対象地点
Claims (7)
- 第1電極と、
前記第1電極上に設けられた半導体基板と、
絶縁膜と、
前記半導体基板上に設けられ、第1導電形の不純物を第1濃度で含有する第1半導体層と、
前記絶縁膜と前記第1半導体層の間に設けられ、前記絶縁膜から前記第1電極に向かって延在する絶縁性物質と、
前記絶縁膜と前記第1半導体層の間に位置し、互いに分断されるように前記絶縁性物質に囲まれ、前記絶縁膜に沿って設けられた第1部分、及び前記絶縁性物質の前記絶縁膜から前記第1電極に向かう方向の側壁に沿って設けられた第2部分を有し、第2導電形の不純物を含有する複数の第2半導体層と、
前記第1半導体層と前記第2半導体層の間に位置し、互いに分断されるように前記絶縁性物質に囲まれ、前記第1部分及び前記第2部分と接し、第1導電形の不純物を前記第1濃度よりも高い第2濃度で含有する複数の第3半導体層と、
前記絶縁膜上に設けられ、前記第2半導体層と電気的に接続された第2電極と、を備え、
前記絶縁性物質は、前記絶縁膜から前記第1電極に向かう方向において、少なくとも2つの異なる前記半導体基板の面内方向の幅を有し、
前記絶縁性物質が前記第2半導体層に接している位置の第1の幅よりも、前記絶縁性物質が前記第1半導体層に接している位置の第2の幅の方が広い、
受光装置。 - 第1電極と、
前記第1電極上に設けられた半導体基板と、
絶縁膜と、
前記半導体基板上に設けられ、第1導電形の不純物を第1濃度で含有する第1半導体層と、
前記絶縁膜と前記第1半導体層の間に設けられ、前記絶縁膜から前記第1電極に向かって延在する絶縁性物質と、
前記絶縁膜と前記第1半導体層の間に位置し、互いに分断されるように前記絶縁性物質に囲まれ、前記絶縁膜に沿って設けられた第1部分、及び前記絶縁性物質の前記絶縁膜から前記第1電極に向かう方向の側壁に沿って設けられた第2部分を有し、第2導電形の不純物を含有する複数の第2半導体層と、
前記第1半導体層と前記第2半導体層の間に位置し、互いに分断されるように前記絶縁性物質に囲まれ、前記第1部分及び前記第2部分と接し、第1導電形の不純物を前記第1濃度よりも高い第2濃度で含有する複数の第3半導体層と、
前記絶縁膜上に設けられ、前記第2半導体層と電気的に接続された第2電極と、を備え、
前記絶縁性物質の前記第2半導体層に接する部分は、前記第2半導体層に含まれる不純物を含む絶縁性の物質を含有する受光装置。 - さらに、前記第2電極と電気的に接続された抵抗を有する、請求項1または請求項2に記載の受光装置。
- 前記第2半導体層及び前記第3半導体層は、平面視上、丸みを帯びた角部を有する矩形の形状を有する、請求項1から請求項3のいずれか1項に記載の受光装置。
- 前記第2半導体層及び前記第3半導体層は、平面視上、円形または楕円の形状を有する、請求項1から請求項3のいずれか1項に記載の受光装置。
- 前記半導体基板はシリコンで形成され、
前記半導体基板上にアバランシェフォトダイオードが形成された、請求項1から請求項5のいずれか1項に記載の受光装置。 - レーザダイオードと、
タイミング情報を提供するタイミング調整部と、
前記タイミング情報をもとに、前記レーザダイオードに命令し、レーザパルスを発射させるレーザダイオード駆動部と、
前記レーザパルスの反射光を検出し、反射光の情報を提供する請求項1から請求項6のいずれか1項に記載の受光装置と、
前記反射光の情報及び前記タイミング情報をもとに前記レーザパルスを発射してからその反射光を検出するまでの時間を計算し、前記レーザパルスの反射地点までの距離を計算する計測部を有する、距離計測装置。
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JP2019041874A JP7273545B2 (ja) | 2019-03-07 | 2019-03-07 | 受光装置及び距離計測装置 |
US16/538,576 US10782428B1 (en) | 2019-03-07 | 2019-08-12 | Light receiving device and distance measuring apparatus |
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CN115833719B (zh) * | 2022-10-09 | 2023-11-14 | 锐博新能源集团有限公司 | 一种tpo/pvc柔性屋面非穿透式光伏支架系统 |
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JPH01132176A (ja) * | 1987-11-18 | 1989-05-24 | Canon Inc | 光電変換装置 |
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- 2019-03-07 JP JP2019041874A patent/JP7273545B2/ja active Active
- 2019-08-12 US US16/538,576 patent/US10782428B1/en active Active
Patent Citations (9)
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JP2012502466A (ja) | 2008-09-04 | 2012-01-26 | クナノ アーベー | ナノ構造のフォトダイオード |
JP2010087369A (ja) | 2008-10-01 | 2010-04-15 | Canon Inc | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
JP2011071455A (ja) | 2009-09-28 | 2011-04-07 | Samsung Electro-Mechanics Co Ltd | シリコン光電子増倍管 |
WO2014045334A1 (ja) | 2012-09-18 | 2014-03-27 | 富士通株式会社 | 半導体受光素子及びその製造方法 |
JP2015056622A (ja) | 2013-09-13 | 2015-03-23 | 株式会社リコー | 半導体装置 |
JP2018032810A (ja) | 2016-08-26 | 2018-03-01 | 株式会社東芝 | 受光装置 |
US20180090526A1 (en) | 2016-09-23 | 2018-03-29 | Apple Inc. | Stacked Backside Illuminated SPAD Array |
US20180301583A1 (en) | 2017-04-13 | 2018-10-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method of manufacturing the same |
CN108231946A (zh) | 2017-12-21 | 2018-06-29 | 上海集成电路研发中心有限公司 | 一种单光子雪崩二极管探测器结构及其制造方法 |
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