JP2018032810A - 受光装置 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010791 quenching Methods 0.000 abstract description 27
- 230000000171 quenching effect Effects 0.000 abstract description 27
- 230000035945 sensitivity Effects 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000001514 detection method Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Computer Hardware Design (AREA)
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- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
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Abstract
Description
図1は、第1の実施形態に係る受光置を模式的に示す平面図である。本実施形態の受光装置は、シリコン半導体基板(図示せず)の主表面に選択的に形成された、フォトンを検出する光電変換素子10〜13を有する。フォトンを検知すると、光電変換素子10〜13はその増幅作用により検出信号を出力する。光電変換素子10〜13は、シリコン半導体基板のXY平面にマトリクス状に選択的に形成される。光電変換素子12、13は、Siで構成される。また、光電変換素子10、11は、Siよりも小さいバンドギャップを有する半導体材料である、例えば、ゲルマニウム(Ge)で構成される。光電変換素子のPN接合を構成するアノード領域とカソード領域(図示せず)は、SiあるいはGeで構成される。
図5は、第2の実施形態の受光装置を模式的に示す平面図である。第1の実施形態に対応する構成要素には同一の符号を付し、重複した記載は必要な場合のみ行う。本実施形態においては、X軸方向にGe光電変換素子10、11とSi光電変換素子12、13が交互に配置される。Y軸方向には、同じ半導体材料、SiまたはGeで構成される光電変換素子が配置される。同じ半導体材料で構成される光電変換素子をY軸方向に接続する、第1のアノード配線42と第2のアノード配線44を有する。第1のアノード配線42には、Ge光電変換素子10、11のアノードが、クエンチング抵抗20、21を介して電気的に接続される。第2のアノード配線44には、Si光電変換素子12、13のアノードが、クエンチング抵抗22、23を介して電気的に接続される。
Claims (6)
- シリコン半導体基板の主表面に選択的に形成された、シリコンで構成される第1の光電変換素子と、
前記シリコン半導体基板の前記主表面に選択的に形成された、前記シリコンよりも小さいバンドギャップを有する半導体材料を含んで構成される第2の光電変換素子と、
前記第1の光電変換素子に一端が電気的に接続され、フォトンが入射し電子雪崩が発生した場合に前記第1の光電変換素子の増倍作用を終息させる作用を有する第1の抵抗と、
前記第2の光電変換素子に一端が電気的に接続され、フォトンが入射し電子雪崩が発生した場合に前記第2の光電変換素子の増倍作用を終息させる作用を有する第2の抵抗と、
前記第1の抵抗と前記第2の抵抗の夫々の他端に電気的に接続される第1の電極配線と、
前記シリコン半導体基板に電気的に接続される第2の電極配線と、
を具備することを特徴とする受光装置。 - 前記第1の光電変換素子と前記第2の光電変換素子は前記シリコン半導体基板の前記主表面にマトリクス状に複数形成されることを特徴とする請求項1に記載の受光装置。
- 前記シリコン半導体基板の前記主表面に形成される複数の第1の光電変換素子と第2の光電変換素子が、前記シリコン半導体基板の前記主表面の第1の方向と前記第1の方向に直交する第2の方向に沿って交互に形成される領域を有することを特徴とする請求項2に記載の受光装置。
- 前記シリコンよりも小さいバンドギャップを有する半導体材料はゲルマニウムを含むことを特徴とする請求項1から3のいずれか一項に記載の受光装置。
- 前記シリコンよりも小さいバンドギャップを有する半導体材料を含んで構成される第2の光電変換素子は前記シリコン半導体基板の前記主表面に形成される前記シリコンよりも小さいバンドギャップを有する半導体材料で構成される半導体層を有し、前記半導体層は、エピタキシャル成長により前記シリコン半導体基板の前記主表面に形成されることを特徴とする請求項1から4のいずれか一項に記載の受光装置。
- シリコン半導体基板と、
前記シリコン半導体基板の主表面に選択的に形成される、シリコンで構成されるPN接合を有する複数の光電変換素子と、
前記シリコン半導体基板の主表面に選択的に形成される、前記シリコンよりも小さいバンドギャップを有する半導体材料を含んで構成されるPN接合を有する複数の光電変換素子と、
前記シリコンで構成される複数の光電変換素子の一方の導電型領域に電気的に接続される第1の電極と、
前記シリコンよりも小さいバンドギャップを有する半導体材料を含んで構成される複数の光電変換素子の一方の導電型領域に電気的に接続される第2の電極と、
前記シリコン半導体基板に形成され、前記シリコンで構成されるPN接合を有する複数の光電変換素子とシリコンよりも小さいバンドギャップを有する半導体材料を含んで構成されるPN接合を有する複数の光電変換素子の他方の導電型領域に電気的に接続される共通電極と、
を具備することを特徴とする受光装置。
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JP2016165666A JP6649207B2 (ja) | 2016-08-26 | 2016-08-26 | 受光装置 |
US15/448,542 US9899434B1 (en) | 2016-08-26 | 2017-03-02 | Light-receiving device having avalanche photodiodes of different types |
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Cited By (3)
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JP2019161047A (ja) * | 2018-03-14 | 2019-09-19 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
JP2020145352A (ja) * | 2019-03-07 | 2020-09-10 | 株式会社東芝 | 受光装置及び距離計測装置 |
JP2021027192A (ja) * | 2019-08-06 | 2021-02-22 | 株式会社東芝 | 受光装置、受光装置の製造方法及び距離計測装置 |
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CN107275433B (zh) * | 2017-03-29 | 2018-12-04 | 湖北京邦科技有限公司 | 一种新型半导体光电倍增器件 |
US11837613B2 (en) * | 2020-05-29 | 2023-12-05 | Taiwan Semiconductor Manufacturing Company Limited | Germanium-containing photodetector and methods of forming the same |
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JP2019161047A (ja) * | 2018-03-14 | 2019-09-19 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
JP2020145352A (ja) * | 2019-03-07 | 2020-09-10 | 株式会社東芝 | 受光装置及び距離計測装置 |
JP7273545B2 (ja) | 2019-03-07 | 2023-05-15 | 株式会社東芝 | 受光装置及び距離計測装置 |
JP2021027192A (ja) * | 2019-08-06 | 2021-02-22 | 株式会社東芝 | 受光装置、受光装置の製造方法及び距離計測装置 |
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