JP2019161047A - 受光装置および受光装置の製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000000593 degrading effect Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 description 15
- 238000010791 quenching Methods 0.000 description 13
- 230000000171 quenching effect Effects 0.000 description 13
- 238000000926 separation method Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
Description
図1は、第1の実施形態による受光装置の構成の一例を模式的に示す平面図である。図2は、第1の実施形態による受光装置の構成の一例を模式的に示す断面図であり、図1のA−A断面図である。受光装置1は、シリコン基板10上に複数の光電変換素子が形成された複数の画素領域21を有する。たとえば、画素領域21は、シリコン基板10の主表面内に2次元的に配置される。シリコン基板10は、たとえば単結晶基板を用いることができる。
第1の実施形態では、光電変換素子の平面視上の形状が矩形状である場合を例に挙げたが、光電変換素子の平面視上の形状は、上記の例の場合に限定されない。第2の実施形態では、光電変換素子の平面視上の形態が他の形状である場合を例に挙げる。
Claims (10)
- 半導体基板の第1主面上に2次元的に設けられる第1導電型の不純物が第1濃度で導入される第1半導体層と、
前記第1主面上の前記第1半導体層間に設けられる絶縁膜と、
前記第1半導体層に設けられる光電変換素子と、
前記第1主面側の前記絶縁膜上に設けられる第1電極と、
前記半導体基板の前記第1主面に対向する第2主面上に設けられる第2電極と、
を備え、
前記光電変換素子は、
前記第1半導体層の前記第1電極が配置される側の上面から所定の深さの範囲に設けられ、第2導電型の不純物が第2濃度で導入される第2半導体層と、
前記第1半導体層内で、前記第2半導体層の側面および下面を囲むように設けられ、前記第1導電型の不純物が前記第1濃度よりも高い第3濃度で導入される第3半導体層と、
を有する受光装置。 - 前記第1半導体層、前記第2半導体層および前記第3半導体層の形状は、平面視上、角部を有さない請求項1に記載の受光装置。
- 前記第1半導体層、前記第2半導体層および前記第3半導体層は、平面視上、丸みを帯びた角部を有する矩形状を有する請求項1に記載の受光装置。
- 前記第1半導体層、前記第2半導体層および前記第3半導体層は、平面視上、円形状を有する請求項1に記載の受光装置。
- 前記第1半導体層、前記第2半導体層および前記第3半導体層は、平面視上、楕円形状を有する請求項1に記載の受光装置。
- 前記第1導電型はP型であり、
前記第2導電型はN型である請求項1から5のいずれか1つに記載の受光装置。 - 前記第1導電型はN型であり、
前記第2導電型はP型である請求項1から5のいずれか1つに記載の受光装置。 - 前記第1半導体層、前記第2半導体層および前記第3半導体層は、エピタキシャル膜によって構成される請求項1に記載の受光装置。
- 前記半導体基板は、単結晶シリコン基板であり、
前記第1半導体層、前記第2半導体層および前記第3半導体層は、シリコンのエピタキシャル膜である請求項4に記載の受光装置。 - 半導体基板上に絶縁膜を形成する工程と、
前記絶縁膜に前記半導体基板にまで到達する開口部を形成する工程と、
前記開口部内に、第1導電型の不純物を第1濃度で含む第1半導体層を形成する工程と、
前記第1半導体層の上面から第1深さまでの範囲で、平面視上で前記第1半導体層の形成範囲よりも狭い範囲に、前記第1導電型の不純物を前記第1濃度よりも高い第2濃度で導入して第2半導体層を形成する工程と、
前記第2半導体層の上面から前記第1深さよりも浅い第2深さまでの範囲で、平面視上で前記第2半導体層の形成範囲よりも狭い範囲に、第2導電型の不純物を第3濃度で導入して第3半導体層を形成する工程と、
を含む受光装置の製造方法。
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JP2018046725A JP6878338B2 (ja) | 2018-03-14 | 2018-03-14 | 受光装置および受光装置の製造方法 |
US16/130,375 US10497823B2 (en) | 2018-03-14 | 2018-09-13 | Light receiving device and method of manufacturing light receiving device |
EP18200351.7A EP3540788B1 (en) | 2018-03-14 | 2018-10-15 | Light receiving device and method of manufacturing light receiving device |
KR1020180128944A KR20190108470A (ko) | 2018-03-14 | 2018-10-26 | 수광 장치, 및 수광 장치의 제조 방법 |
CN201811274379.XA CN110277414A (zh) | 2018-03-14 | 2018-10-30 | 受光装置及受光装置的制造方法 |
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JP2021072347A (ja) * | 2019-10-30 | 2021-05-06 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
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KR20240010101A (ko) | 2017-03-22 | 2024-01-23 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 및 신호 처리 장치 |
US11393870B2 (en) * | 2018-12-18 | 2022-07-19 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, and mobile apparatus |
JP7309647B2 (ja) * | 2020-03-24 | 2023-07-18 | 株式会社東芝 | 受光装置及び半導体装置 |
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- 2018-10-15 EP EP18200351.7A patent/EP3540788B1/en active Active
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JP7328868B2 (ja) | 2019-10-30 | 2023-08-17 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
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JP6878338B2 (ja) | 2021-05-26 |
US20190288149A1 (en) | 2019-09-19 |
CN110277414A (zh) | 2019-09-24 |
KR20190108470A (ko) | 2019-09-24 |
US10497823B2 (en) | 2019-12-03 |
EP3540788A1 (en) | 2019-09-18 |
EP3540788B1 (en) | 2021-05-05 |
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