FR3114441B1 - Photodiode de type spad - Google Patents
Photodiode de type spad Download PDFInfo
- Publication number
- FR3114441B1 FR3114441B1 FR2009721A FR2009721A FR3114441B1 FR 3114441 B1 FR3114441 B1 FR 3114441B1 FR 2009721 A FR2009721 A FR 2009721A FR 2009721 A FR2009721 A FR 2009721A FR 3114441 B1 FR3114441 B1 FR 3114441B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- spad
- type photodiode
- photodiode
- spad type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PHOTODIODE DE TYPE SPAD La présente description concerne une photodiode (200) de type SPAD comportant une zone de déplétion dans une première partie d'un substrat semiconducteur (101) d'un premier type de conductivité et comprenant en outre une grille (201) isolée électriquement du substrat, s'étendant dans le substrat depuis une face supérieure du substrat, et séparant la première partie du substrat d'une deuxième partie (205). La photodiode comprend en outre une première région (206) du deuxième type de conductivité s'étendant depuis la face supérieure du substrat dans la deuxième partie. Figure pour l'abrégé : Fig. 8
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2009721A FR3114441B1 (fr) | 2020-09-24 | 2020-09-24 | Photodiode de type spad |
US17/483,390 US20220093807A1 (en) | 2020-09-24 | 2021-09-23 | Spad-type photodiode |
CN202111120815.XA CN114256373A (zh) | 2020-09-24 | 2021-09-24 | Spad型光电二极管 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2009721A FR3114441B1 (fr) | 2020-09-24 | 2020-09-24 | Photodiode de type spad |
FR2009721 | 2020-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3114441A1 FR3114441A1 (fr) | 2022-03-25 |
FR3114441B1 true FR3114441B1 (fr) | 2022-10-07 |
Family
ID=74183282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2009721A Active FR3114441B1 (fr) | 2020-09-24 | 2020-09-24 | Photodiode de type spad |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220093807A1 (fr) |
CN (1) | CN114256373A (fr) |
FR (1) | FR3114441B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3117672B1 (fr) * | 2020-12-10 | 2023-12-08 | St Microelectronics Crolles 2 Sas | Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7429496B2 (en) * | 2005-08-30 | 2008-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Buried photodiode for image sensor with shallow trench isolation technology |
EP2150991B1 (fr) * | 2007-04-24 | 2017-09-27 | Koninklijke Philips N.V. | Procédé pour la formation d'une photodiode à avalanche integrée avec des circuits du type cmos et un photomultiplicateur au silicium fabriqué selon cette méthode |
GB201215547D0 (en) * | 2012-08-31 | 2012-10-17 | Infinitesima Ltd | Multiple probe actuation |
US9160949B2 (en) * | 2013-04-01 | 2015-10-13 | Omnivision Technologies, Inc. | Enhanced photon detection device with biased deep trench isolation |
JP6387743B2 (ja) * | 2013-12-16 | 2018-09-12 | 株式会社リコー | 半導体装置および半導体装置の製造方法 |
FR3041817B1 (fr) * | 2015-09-30 | 2017-10-13 | Commissariat Energie Atomique | Photodiode de type spad |
JP2017108062A (ja) * | 2015-12-11 | 2017-06-15 | ソニー株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の製造方法 |
US10141458B2 (en) * | 2016-07-21 | 2018-11-27 | Omnivision Technologies, Inc. | Vertical gate guard ring for single photon avalanche diode pitch minimization |
-
2020
- 2020-09-24 FR FR2009721A patent/FR3114441B1/fr active Active
-
2021
- 2021-09-23 US US17/483,390 patent/US20220093807A1/en active Pending
- 2021-09-24 CN CN202111120815.XA patent/CN114256373A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220093807A1 (en) | 2022-03-24 |
CN114256373A (zh) | 2022-03-29 |
FR3114441A1 (fr) | 2022-03-25 |
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