FR3121282B1 - Photodiode SPAD - Google Patents
Photodiode SPAD Download PDFInfo
- Publication number
- FR3121282B1 FR3121282B1 FR2103040A FR2103040A FR3121282B1 FR 3121282 B1 FR3121282 B1 FR 3121282B1 FR 2103040 A FR2103040 A FR 2103040A FR 2103040 A FR2103040 A FR 2103040A FR 3121282 B1 FR3121282 B1 FR 3121282B1
- Authority
- FR
- France
- Prior art keywords
- conductivity
- type
- photodiode
- spad photodiode
- substantially hemispherical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Photodiode SPAD La présente description concerne une photodiode comportant, dans un substrat semi-conducteur (11) d'un premier type de conductivité : - une première région (13) enterrée sensiblement hémisphérique du premier type de conductivité ; et - à l'intérieur de la première région, un coeur (15) sensiblement hémisphérique d'un deuxième type de conductivité, différent du premier type de conductivité. Figure pour l'abrégé : Fig. 2
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2103040A FR3121282B1 (fr) | 2021-03-25 | 2021-03-25 | Photodiode SPAD |
US17/702,186 US20220310867A1 (en) | 2021-03-25 | 2022-03-23 | Spad photodiode |
CN202210301458.5A CN115132873A (zh) | 2021-03-25 | 2022-03-24 | Spad光电二极管 |
CN202220665731.8U CN217426769U (zh) | 2021-03-25 | 2022-03-24 | 光电二极管 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2103040A FR3121282B1 (fr) | 2021-03-25 | 2021-03-25 | Photodiode SPAD |
FR2103040 | 2021-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3121282A1 FR3121282A1 (fr) | 2022-09-30 |
FR3121282B1 true FR3121282B1 (fr) | 2023-12-22 |
Family
ID=79170771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2103040A Active FR3121282B1 (fr) | 2021-03-25 | 2021-03-25 | Photodiode SPAD |
Country Status (2)
Country | Link |
---|---|
US (1) | US20220310867A1 (fr) |
FR (1) | FR3121282B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3117672B1 (fr) * | 2020-12-10 | 2023-12-08 | St Microelectronics Crolles 2 Sas | Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2475296A1 (fr) * | 1980-02-01 | 1981-08-07 | Thomson Csf | Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode |
JPH09232621A (ja) * | 1996-02-26 | 1997-09-05 | Hamamatsu Photonics Kk | 半導体装置 |
JP4798205B2 (ja) * | 2008-10-23 | 2011-10-19 | ソニー株式会社 | 固体撮像装置とその製造方法、及び撮像装置 |
FR2938374B1 (fr) * | 2008-11-10 | 2011-02-11 | Commissariat Energie Atomique | Photodetecteur a gain interne et detecteur comportant une matrice de tels photodetecteurs |
-
2021
- 2021-03-25 FR FR2103040A patent/FR3121282B1/fr active Active
-
2022
- 2022-03-23 US US17/702,186 patent/US20220310867A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220310867A1 (en) | 2022-09-29 |
FR3121282A1 (fr) | 2022-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7511306B2 (en) | Semiconductor light emitting device and apparatus having a translucent conductive film | |
FR3121282B1 (fr) | Photodiode SPAD | |
JP6843885B2 (ja) | 複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法 | |
FR3073669B1 (fr) | Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes | |
JPH04180269A (ja) | 回路内蔵受光素子 | |
JPS54101688A (en) | Optical semiconductor device | |
KR20150031208A (ko) | 반도체 디바이스 및 이의 제조 방법 | |
US20180204876A1 (en) | Optoelectronic component and a method of producing an optoelectronic component | |
CN104022181B (zh) | 一种光电二极管的制作方法 | |
KR20110132990A (ko) | 반도체 수광소자 및 광 모듈 | |
JP2014086553A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
FR3114441B1 (fr) | Photodiode de type spad | |
JPH1140790A (ja) | 分割フォトダイオード及び回路内蔵受光素子 | |
JP2016025095A (ja) | 受光素子 | |
FR3101480B1 (fr) | Tranchées isolantes pour les circuits ESD | |
US11764245B2 (en) | Fabrication method of photodetector and imaging sensor | |
FR3091024B1 (fr) | Photodiode à avalanche à photon unique | |
CN111048501B (zh) | 一种小体积高线性度的线性光耦器件及其制作方法 | |
JP2006269978A (ja) | フォトダイオード | |
JP2001358359A (ja) | 半導体受光素子 | |
JPH04167565A (ja) | フリップチップ型受光素子 | |
FR3093592B1 (fr) | Circuit intégré comportant un condensateur tridimensionnel | |
CN210349864U (zh) | 双光源发光二极体支架 | |
JPH0567800A (ja) | 光半導体装置 | |
JPS63299163A (ja) | 光半導体集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20220930 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |