FR3121282B1 - Photodiode SPAD - Google Patents

Photodiode SPAD Download PDF

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Publication number
FR3121282B1
FR3121282B1 FR2103040A FR2103040A FR3121282B1 FR 3121282 B1 FR3121282 B1 FR 3121282B1 FR 2103040 A FR2103040 A FR 2103040A FR 2103040 A FR2103040 A FR 2103040A FR 3121282 B1 FR3121282 B1 FR 3121282B1
Authority
FR
France
Prior art keywords
conductivity
type
photodiode
spad photodiode
substantially hemispherical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2103040A
Other languages
English (en)
Other versions
FR3121282A1 (fr
Inventor
Antonin Zimmer
Dominique Golanski
Raul Andres Bianchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2103040A priority Critical patent/FR3121282B1/fr
Priority to US17/702,186 priority patent/US20220310867A1/en
Priority to CN202220665731.8U priority patent/CN217426769U/zh
Priority to CN202210301458.5A priority patent/CN115132873A/zh
Publication of FR3121282A1 publication Critical patent/FR3121282A1/fr
Application granted granted Critical
Publication of FR3121282B1 publication Critical patent/FR3121282B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

Photodiode SPAD La présente description concerne une photodiode comportant, dans un substrat semi-conducteur (11) d'un premier type de conductivité : - une première région (13) enterrée sensiblement hémisphérique du premier type de conductivité ; et - à l'intérieur de la première région, un coeur (15) sensiblement hémisphérique d'un deuxième type de conductivité, différent du premier type de conductivité. Figure pour l'abrégé : Fig. 2
FR2103040A 2021-03-25 2021-03-25 Photodiode SPAD Active FR3121282B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2103040A FR3121282B1 (fr) 2021-03-25 2021-03-25 Photodiode SPAD
US17/702,186 US20220310867A1 (en) 2021-03-25 2022-03-23 Spad photodiode
CN202220665731.8U CN217426769U (zh) 2021-03-25 2022-03-24 光电二极管
CN202210301458.5A CN115132873A (zh) 2021-03-25 2022-03-24 Spad光电二极管

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2103040 2021-03-25
FR2103040A FR3121282B1 (fr) 2021-03-25 2021-03-25 Photodiode SPAD

Publications (2)

Publication Number Publication Date
FR3121282A1 FR3121282A1 (fr) 2022-09-30
FR3121282B1 true FR3121282B1 (fr) 2023-12-22

Family

ID=79170771

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2103040A Active FR3121282B1 (fr) 2021-03-25 2021-03-25 Photodiode SPAD

Country Status (2)

Country Link
US (1) US20220310867A1 (fr)
FR (1) FR3121282B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3117672B1 (fr) * 2020-12-10 2023-12-08 St Microelectronics Crolles 2 Sas Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475296A1 (fr) * 1980-02-01 1981-08-07 Thomson Csf Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode
JPH09232621A (ja) * 1996-02-26 1997-09-05 Hamamatsu Photonics Kk 半導体装置
EP1679749A1 (fr) * 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Photodiode à Semiconducteur et Procédé de fabrication
US20070012948A1 (en) * 2005-07-15 2007-01-18 Dries J C Combined APD / PIN InGaAs photodetector with microlens structure and method of manufacture
JP4798205B2 (ja) * 2008-10-23 2011-10-19 ソニー株式会社 固体撮像装置とその製造方法、及び撮像装置
FR2938374B1 (fr) * 2008-11-10 2011-02-11 Commissariat Energie Atomique Photodetecteur a gain interne et detecteur comportant une matrice de tels photodetecteurs

Also Published As

Publication number Publication date
US20220310867A1 (en) 2022-09-29
FR3121282A1 (fr) 2022-09-30

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